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    Semiconductor devices and methods of fabricating the same
    2.
    发明授权
    Semiconductor devices and methods of fabricating the same 有权
    半导体器件及其制造方法

    公开(公告)号：US08405158B2

    公开(公告)日：2013-03-26

    申请号：US12832373

    申请日：2010-07-08

    申请人： Young-Bae Yoon ,  Jong-Hyuk Kim ,  Keonsoo Kim ,  Youngseop Rah ,  Yoonmoon Park

    发明人： Young-Bae Yoon ,  Jong-Hyuk Kim ,  Keonsoo Kim ,  Youngseop Rah ,  Yoonmoon Park

    IPC分类号： H01L27/088 ,  H01L29/76

    CPC分类号： H01L27/11521 ,  G11C16/0483 ,  H01L27/11519

    摘要： A semiconductor memory device and method of manufacturing the same, the device including string structures, the string structures including two or more adjacent string selection transistors connected in series to each other in a first direction and being spaced apart from one another in a second direction intersecting the first direction, the two or more string selection transistors having different threshold voltages; string selection lines, the string selection lines connecting the adjacent string selection transistors of the string structures in the second direction; and a bit line electrically connecting two or more adjacent string structures, wherein a device isolation layer between the adjacent string selection transistors in the second direction has recessed regions, and profiles of the recessed regions on respective sides of the string selection transistors are different from each other.

    摘要翻译： 一种半导体存储器件及其制造方法，该器件包括串联结构，串联结构包括两个或多个相邻的串选择晶体管，它们在第一方向上彼此串联连接，并且在第二方向上相互间隔开 所述第一方向，所述两个或更多个串选择晶体管具有不同的阈值电压; 串选择线，串串选择线，连接串结构的相邻串选择晶体管沿第二方向; 以及电连接两个或更多个相邻串结构的位线，其中在第二方向上的相邻串选择晶体管之间的器件隔离层具有凹陷区域，并且串选择晶体管的相应侧上的凹陷区域的轮廓与每个不同 其他。

    SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
    3.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20110038211A1

    公开(公告)日：2011-02-17

    申请号：US12832373

    申请日：2010-07-08

    申请人： Young-Bae Yoon ,  Jong-Hyuk Kim ,  Keonsoo Kim ,  Youngseop Rah ,  Yoonmoon Park

    发明人： Young-Bae Yoon ,  Jong-Hyuk Kim ,  Keonsoo Kim ,  Youngseop Rah ,  Yoonmoon Park

    IPC分类号： G11C16/04 ,  H01L27/088

    CPC分类号： H01L27/11521 ,  G11C16/0483 ,  H01L27/11519

    摘要： A semiconductor memory device and method of manufacturing the same, the device including string structures, the string structures including two or more adjacent string selection transistors connected in series to each other in a first direction and being spaced apart from one another in a second direction intersecting the first direction, the two or more string selection transistors having different threshold voltages; string selection lines, the string selection lines connecting the adjacent string selection transistors of the string structures in the second direction; and a bit line electrically connecting two or more adjacent string structures, wherein a device isolation layer between the adjacent string selection transistors in the second direction has recessed regions, and profiles of the recessed regions on respective sides of the string selection transistors are different from each other.

    摘要翻译： 一种半导体存储器件及其制造方法，该器件包括串联结构，串联结构包括两个或更多个相邻的串选择晶体管，它们在第一方向上彼此串联连接并且沿第二方向相互间隔开 所述第一方向，所述两个或更多个串选择晶体管具有不同的阈值电压; 串选择线，串串选择线，连接串结构的相邻串选择晶体管沿第二方向; 以及电连接两个或更多个相邻串结构的位线，其中在第二方向上的相邻串选择晶体管之间的器件隔离层具有凹陷区域，并且串选择晶体管的相应侧上的凹陷区域的轮廓与每个不同 其他。

    Detachable connecting rod and compressor having the same
    4.
    发明授权
    Detachable connecting rod and compressor having the same 有权
    具有相同的可拆卸连杆和压缩机

    公开(公告)号：US08171841B2

    公开(公告)日：2012-05-08

    申请号：US12226676

    申请日：2006-12-29

    申请人： Kyoung-Jun Park ,  Ji-Young Bae ,  Jin-Kook Kim ,  Bum-Joon Kim ,  Hyuk Nam ,  Jong-Mok Lee ,  Jong-Hyuk Kim ,  Kyeong-Ho Kim

    发明人： Kyoung-Jun Park ,  Ji-Young Bae ,  Jin-Kook Kim ,  Bum-Joon Kim ,  Hyuk Nam ,  Jong-Mok Lee ,  Jong-Hyuk Kim ,  Kyeong-Ho Kim

    IPC分类号： F01B29/00 ,  F01B9/00

    CPC分类号： F04B39/0022 ,  F16C2360/42 ,  Y10T74/2142 ,  Y10T74/2162

    摘要： A detachable connecting rod includes a first member (410)a large end portion (411) having a trough hole (H1), and a first connection rod portion (412) extending from the large end portion (411), the first connection rod portion (412) having a pair of spaced apart arms defining a coupling groove (413) extending in the same direction as an axial direction of the through hole (H1); a second member (420) including a small end portion having a through hole (H2), and second connection rod portion (422) extending from the small end portion, the second connection rod (422) portion being inserted into the coupling groove (413) and a coupling unit for coupling the first connection rod portion (412) to the second connection rod portion inserted (412) into the coupling groove (413) of the first member (410). The detachable connecting rod is useable in a compressor.

    摘要翻译： 一种可拆卸的连接杆包括：第一部件（410），具有槽孔（H1）的大端部（411）和从大端部（411）延伸的第一连接杆部分（412），第一连接杆部分 （412），其具有限定沿与所述通孔（H1）的轴向方向相同的方向延伸的联接槽（413）的一对间隔开的臂。 包括具有通孔（H2）的小端部的第二构件（420）和从所述小端部延伸的第二连接杆部分（422），所述第二连接杆（422）部分插入所述联接槽（413） ）和用于将第一连接杆部分（412）连接到插入（412）的第二连接杆部分到第一部件（410）的联接槽（413）中的联接单元。 可拆卸连杆可用于压缩机。

    METHODS OF FORMING NAND-TYPE NONVOLATILE MEMORY DEVICES
    5.
    发明申请
    METHODS OF FORMING NAND-TYPE NONVOLATILE MEMORY DEVICES 有权
    形成NAND型非易失性存储器件的方法

    公开(公告)号：US20090233405A1

    公开(公告)日：2009-09-17

    申请号：US12474896

    申请日：2009-05-29

    申请人： Hoo-Sung Cho ,  Soon-Moon Jung ,  Won-Seok Cho ,  Jong-Hyuk Kim ,  Jae-Hun Jeong ,  Jae-Hoon Jang

    发明人： Hoo-Sung Cho ,  Soon-Moon Jung ,  Won-Seok Cho ,  Jong-Hyuk Kim ,  Jae-Hun Jeong ,  Jae-Hoon Jang

    IPC分类号： H01L21/336

    CPC分类号： H01L27/11524 ,  H01L27/0688 ,  H01L27/11551

    摘要： Methods of forming a NAND-type nonvolatile memory device include: forming first common drains and first common sources alternatively in an active region which is defined in a semiconductor substrate and extends one direction, forming a first insulating layer covering an entire surface of the semiconductor substrate, patterning the first insulating layer to form seed contact holes which are arranged at regular distance and expose the active region, forming a seed contact structure filling each of the seed contact holes and a semiconductor layer disposed on the first insulating layer and contacting the seed contact structures, patterning the semiconductor layer to form a semiconductor pattern which extends in the one direction and is disposed over the active region, forming second common drains and second common sources disposed alternatively in the semiconductor pattern in the one direction, forming a second insulating layer covering an entire surface of the semiconductor substrate, forming a source line pattern continuously penetrating the second insulating layer, the semiconductor pattern and the first insulating layer, the source line pattern being connected with the first and second common sources, wherein a grain boundary of the semiconductor layer is positioned at a center between the one pair of seed contact structures adjacent to each other, and is positioned over the first common drain or the first common source.

    摘要翻译： 形成NAND型非易失性存储器件的方法包括：在半导体衬底中限定的有源区域中交替形成第一公共漏极和第一公共源，并延伸一个方向，形成覆盖半导体衬底的整个表面的第一绝缘层 图案化第一绝缘层以形成以规则距离布置的暴露有源区域的种子接触孔，形成填充每个种子接触孔的种子接触结构以及设置在第一绝缘层上并接触种子接触的半导体层 结构，图案化所述半导体层以形成在所述一个方向上延伸并设置在所述有源区上方的半导体图案，形成沿所述一个方向交替设置在所述半导体图案中的第二公共漏极和第二公共源，形成第二绝缘层覆盖层 半导体衬底的整个表面 使源极线图案连续地穿过第二绝缘层，半导体图案和第一绝缘层，源极线图案与第一和第二共用源连接，其中半导体层的晶界位于第二绝缘层之间的中心 一对种子接触结构彼此相邻，并且位于第一公共漏极或第一公共源的上方。

    Nand-type non-volatile memory device
    6.
    发明授权
    Nand-type non-volatile memory device 失效
    Nand型非易失性存储器件

    公开(公告)号：US07554140B2

    公开(公告)日：2009-06-30

    申请号：US11651892

    申请日：2007-01-10

    申请人： Hoo-Sung Cho ,  Soon-Moon Jung ,  Won-Seok Cho ,  Jong-Hyuk Kim ,  Jae-Hun Jeong ,  Jae-Hoon Jang

    发明人： Hoo-Sung Cho ,  Soon-Moon Jung ,  Won-Seok Cho ,  Jong-Hyuk Kim ,  Jae-Hun Jeong ,  Jae-Hoon Jang

    IPC分类号： H01L31/062

    CPC分类号： H01L27/11524 ,  H01L27/0688 ,  H01L27/11551

    摘要： Provided is a NAND-type nonvolatile memory device and method of forming the same. In the method, a plurality of cell layers are stacked on a semiconductor substrate. Seed contact holes for forming a semiconductor pattern included in a stacked cell are formed at regular distance. At this time, the seed contact holes are arranged such that a bit line plug or a source line pattern is disposed at a center between one pair of seed contact holes adjacent to each other.

    摘要翻译： 提供了一种NAND型非易失性存储器件及其形成方法。 在该方法中，多个单元层层叠在半导体基板上。 用于形成包含在层叠电池中的半导体图案的种子接触孔以规则的距离形成。 此时，种子接触孔布置成使得位线插头或源极线图案设置在彼此相邻的一对种子接触孔之间的中心处。

    Methods of Forming Dual Damascene Structures
    7.
    发明申请
    Methods of Forming Dual Damascene Structures 失效
    形成双镶嵌结构的方法

    公开(公告)号：US20080149021A1

    公开(公告)日：2008-06-26

    申请号：US12043576

    申请日：2008-03-06

    申请人： Jun Seo ,  Jong-Hyuk Kim ,  Jong-Heui Song ,  Yung-Jun Kim ,  Min-Chul Chae

    发明人： Jun Seo ,  Jong-Hyuk Kim ,  Jong-Heui Song ,  Yung-Jun Kim ,  Min-Chul Chae

    IPC分类号： C30B25/02

    CPC分类号： H01L21/76876 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/28525 ,  H01L21/28562 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76879 ,  H01L21/76895 ,  H01L29/66477 ,  Y10T428/24331

    摘要： A dual damascene structure and a method of forming a dual damascene structure are disclosed. The dual damascene structure includes an insulation member, a single crystal member and a filling member. The insulation member has an opening having a dual damascene shape. The filling member is formed on a side face of the opening. The single crystal member contacts the filling member. The single crystal member fills up the opening. In order to form a dual damascene structure, an insulating member having an opening partially filled with a preliminary single crystal member is formed. The filling member is formed on a side face of the opening. The preliminary single crystal member epitaxially grows to fill up the opening. Because the filling member is positioned between the single crystal member and the insulation member, void formation may be reduced between the single crystal member and the insulation member.

    摘要翻译： 公开了一种双镶嵌结构和形成双镶嵌结构的方法。 双镶嵌结构包括绝缘构件，单晶构件和填充构件。 绝缘构件具有双镶嵌形状的开口。 填充构件形成在开口的侧面上。 单晶构件接触填充构件。 单晶构件填充开口。 为了形成双镶嵌结构，形成具有部分填充有初级单晶构件的开口的绝缘构件。 填充构件形成在开口的侧面上。 外延的初步单晶构件生长以填满开口。 由于填充构件位于单晶构件和绝缘构件之间，所以在单晶构件和绝缘构件之间可能会减小空隙形成。

    Detachable Connecting Rod Compressor Having the Same
    9.
    发明申请
    Detachable Connecting Rod Compressor Having the Same 有权
    可拆卸连杆压缩机具有相同的功能

    公开(公告)号：US20090123305A1

    公开(公告)日：2009-05-14

    申请号：US12226676

    申请日：2006-12-29

    申请人： Kyoung-Jun Park ,  Ji-Young Bae ,  Jin-Kook Kim ,  Bum-Joon Kim ,  Hyuk Nam ,  Jong-Mok Lee ,  Jong-Hyuk Kim ,  Kyeong-Ho Kim

    发明人： Kyoung-Jun Park ,  Ji-Young Bae ,  Jin-Kook Kim ,  Bum-Joon Kim ,  Hyuk Nam ,  Jong-Mok Lee ,  Jong-Hyuk Kim ,  Kyeong-Ho Kim

    IPC分类号： F04B17/00 ,  F16C7/00

    CPC分类号： F04B39/0022 ,  F16C2360/42 ,  Y10T74/2142 ,  Y10T74/2162

    摘要： A detachable connecting rod includes a first member (410)a large end portion (411) having a trough hole (H1), and a first connection rod portion (412) extending from the large end portion (411), the first connection rod portion (412) having a pair of spaced apart arms defining a coupling groove (413) extending in the same direction as an axial direction of the through hole (H1); a second member (420) including a small end portion having a through hole (H2), and second connection rod portion (422) extending from the small end portion, the second connection rod (422) portion being inserted into the coupling groove (413) and a coupling unit for coupling the first connection rod portion (412) to the second connection rod portion inserted (412) into the coupling groove (413) of the first member (410). The detachable connecting rod is useable in a compressor.

    摘要翻译： 一种可拆卸的连接杆包括：第一部件（410），具有槽孔（H1）的大端部（411）和从大端部（411）延伸的第一连接杆部分（412），第一连接杆部分 （412），其具有限定沿与所述通孔（H1）的轴向方向相同的方向延伸的联接槽（413）的一对间隔开的臂。 包括具有通孔（H2）的小端部的第二构件（420）和从所述小端部延伸的第二连接杆部分（422），所述第二连接杆（422）部分插入所述联接槽（413） ）和用于将第一连接杆部分（412）连接到插入（412）的第二连接杆部分到第一部件（410）的联接槽（413）中的联接单元。 可拆卸连杆可用于压缩机。

    Dual Damascene Structure
    10.
    发明申请
    Dual Damascene Structure 审中-公开
    双镶嵌结构

    公开(公告)号：US20080152866A1

    公开(公告)日：2008-06-26

    申请号：US12043563

    申请日：2008-03-06

    申请人： Jun Seo ,  Jong-Hyuk Kim ,  Jong-Heui Song ,  Yung-Jun Kim ,  Min-Chul Chae

    发明人： Jun Seo ,  Jong-Hyuk Kim ,  Jong-Heui Song ,  Yung-Jun Kim ,  Min-Chul Chae

    IPC分类号： B32B3/10

    CPC分类号： H01L21/76876 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/28525 ,  H01L21/28562 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76879 ,  H01L21/76895 ,  H01L29/66477 ,  Y10T428/24331

    摘要： A dual damascene structure and a method of forming a dual damascene structure are disclosed. The dual damascene structure includes an insulation member, a single crystal member and a filling member. The insulation member has an opening having a dual damascene shape. The filling member is formed on a side face of the opening. The single crystal member contacts the filling member. The single crystal member fills up the opening. In order to form a dual damascene structure, an insulating member having an opening partially filled with a preliminary single crystal member is formed. The filling member is formed on a side face of the opening. The preliminary single crystal member epitaxially grows to fill up the opening. Because the filling member is positioned between the single crystal member and the insulation member, void formation may be reduced between the single crystal member and the insulation member.

    摘要翻译： 公开了一种双镶嵌结构和形成双镶嵌结构的方法。 双镶嵌结构包括绝缘构件，单晶构件和填充构件。 绝缘构件具有双镶嵌形状的开口。 填充构件形成在开口的侧面上。 单晶构件接触填充构件。 单晶构件填充开口。 为了形成双镶嵌结构，形成具有部分填充有初级单晶构件的开口的绝缘构件。 填充构件形成在开口的侧面上。 外延的初步单晶构件生长以填满开口。 由于填充构件位于单晶构件和绝缘构件之间，所以在单晶构件和绝缘构件之间可能会减小空隙形成。