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公开(公告)号：US20120148944A1
公开(公告)日：2012-06-14
申请号：US13279859
申请日：2011-10-24
申请人： Jong-Keun OH , Dae-Hyuk Kang , Chan-Uk Jeon , Hyung-Ho Ko , Sung-Jae Han , Jung-Jin Kim
发明人： Jong-Keun OH , Dae-Hyuk Kang , Chan-Uk Jeon , Hyung-Ho Ko , Sung-Jae Han , Jung-Jin Kim
摘要： In a method of manufacturing a photomask pattern, a light-shielding layer pattern and an anti-reflective layer pattern are formed sequentially on a transparent substrate. Oxidation and nitridation processes are performed on a sidewall of the light-shielding layer pattern to form a protection layer pattern on a lateral portion of the light-shielding layer pattern.
摘要翻译： 在制造光掩模图案的方法中，在透明基板上依次形成遮光层图案和抗反射层图案。 在遮光层图案的侧壁上进行氧化和氮化处理，以在遮光层图案的横向部分上形成保护层图案。
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公开(公告)号：US08784672B2
公开(公告)日：2014-07-22
申请号：US13279859
申请日：2011-10-24
申请人： Jong-Keun Oh , Dae-Hyuk Kang , Chan-Uk Jeon , Hyung-Ho Ko , Sung-Jae Han , Jung-Jin Kim
发明人： Jong-Keun Oh , Dae-Hyuk Kang , Chan-Uk Jeon , Hyung-Ho Ko , Sung-Jae Han , Jung-Jin Kim
摘要： In a method of manufacturing a photomask pattern, a light-shielding layer pattern and an anti-reflective layer pattern are formed sequentially on a transparent substrate. Oxidation and nitridation processes are performed on a sidewall of the light-shielding layer pattern to form a protection layer pattern on a lateral portion of the light-shielding layer pattern.
摘要翻译： 在制造光掩模图案的方法中，在透明基板上依次形成遮光层图案和抗反射层图案。 在遮光层图案的侧壁上进行氧化和氮化处理，以在遮光层图案的横向部分上形成保护层图案。
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3.发明申请UNIT FOR PREVENTING A SUBSTRATE FROM DRYING, SUBSTRATE CLEANING APPARATUS HAVING THE UNIT AND METHOD OF CLEANING THE SUBSTRATE USING THE UNIT 审中-公开用于防止基材干燥的单元，具有单元的基板清洁装置和使用单元清洁基板的方法公开(公告)号：US20070144559A1
公开(公告)日：2007-06-28
申请号：US11611524
申请日：2006-12-15
申请人： Kwang-Shin Lim , Sung-Jae Han , Yong-Hoon Lee , Hyung-Seok Choi , Ju-Ah Ryu , Yong-Joo Choi
发明人： Kwang-Shin Lim , Sung-Jae Han , Yong-Hoon Lee , Hyung-Seok Choi , Ju-Ah Ryu , Yong-Joo Choi
CPC分类号： B08B3/04 , H01L21/67051 , H01L21/67751 , H01L21/68707
摘要： A unit for preventing a substrate from drying includes a transfer arm for transferring a substrate from a first bath containing a first cleaning solution to a second bath containing a second cleaning solution, a spraying part connected to the transfer arm, wherein the spraying part sprays a drying prevention solution from an upper portion of the substrate to a lower portion of the substrate, and a drainage container connected to the transfer arm, wherein the drainage container receives the drying prevention solution.
摘要翻译： 用于防止基材干燥的单元包括用于将基材从含有第一清洗溶液的第一浴转移到含有第二清洗溶液的第二浴的转移臂，连接到转移臂的喷射部分，其中喷雾部分喷雾 从所述基板的上部到所述基板的下部的防干燥溶液和与所述输送臂连接的排水容器，其中所述排水容器接收所述干燥防止溶液。
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公开(公告)号：US20060019178A1
公开(公告)日：2006-01-26
申请号：US11177434
申请日：2005-07-11
申请人： Jeong-Yun Lee , Seong-Woon Choi , Il-Yong Jang , Won-Suk Ahn , Sung-Jae Han
发明人： Jeong-Yun Lee , Seong-Woon Choi , Il-Yong Jang , Won-Suk Ahn , Sung-Jae Han
摘要： A method of repairing a phase shift mask includes exposing upper and side surfaces of the phase shift pattern of the mask, selectively forming a passivation layer on the surfaces of the exposed phase shift patterns, and then cleaning the phase shift mask on which the passivation layers are formed. The repairing of the phase shift mask is carried out in the midst of a series of photolithographic exposure processes in which the phase shift mask is used to transfer an image to a photoresist layer or layers. After the photomask is cleaned, a determination is made as to whether the transmittance of the phase shift pattern is above a threshold value.
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公开(公告)号：US07527901B2
公开(公告)日：2009-05-05
申请号：US11177434
申请日：2005-07-11
申请人： Jeong-Yun Lee , Seong-Woon Choi , Il-Yong Jang , Won-Suk Ahn , Sung-Jae Han
发明人： Jeong-Yun Lee , Seong-Woon Choi , Il-Yong Jang , Won-Suk Ahn , Sung-Jae Han
IPC分类号： G03F1/00
摘要： A method of repairing a phase shift mask includes exposing upper and side surfaces of the phase shift pattern of the mask, selectively forming a passivation layer on the surfaces of the exposed phase shift patterns, and then cleaning the phase shift mask on which the passivation layers are formed. The repairing of the phase shift mask is carried out in the midst of a series of photolithographic exposure processes in which the phase shift mask is used to transfer an image to a photoresist layer or layers. After the photomask is cleaned, a determination is made as to whether the transmittance of the phase shift pattern is above a threshold value.
摘要翻译： 修复相移掩模的方法包括暴露掩模的相移图案的上表面和侧表面，在曝光的相移图案的表面上选择性地形成钝化层，然后清洁其上钝化层 形成。 相移掩模的修复在一系列光刻曝光工艺中进行，其中使用相移掩模将图像转印到光致抗蚀剂层或层。 在光掩模被清洁之后，确定相移图案的透射率是否高于阈值。
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6.发明授权公开(公告)号：US07842916B2
公开(公告)日：2010-11-30
申请号：US12197052
申请日：2008-08-22
申请人： Dong-Hun Lee , Hae-Young Jeong , Byung-Cheol Cha , Sung-Jae Han
发明人： Dong-Hun Lee , Hae-Young Jeong , Byung-Cheol Cha , Sung-Jae Han
IPC分类号： G01N33/00
CPC分类号： G01N1/4055 , G01N30/96 , G01N2001/4061 , G03F1/84 , Y10T436/25125
摘要： A method of analyzing ions adsorbed on a surface of a mask for pattern formation of a semiconductor device, and an apparatus using the same are disclosed. The ion analyzing method includes: filling a heating container within a main chamber with a predetermined amount of a solvent; immersing a mask in the solvent-filled heating container; raising an internal pressure of the chamber to a predetermined level by supplying gas into the chamber; separating ions from a surface of the mask by heating the solvent within the heating container at a predetermined temperature for a predetermined period; and analyzing the ions by collecting the solvent.
摘要翻译： 公开了分析吸附在掩模的表面上用于图案形成半导体器件的离子的方法和使用其的装置。 离子分析方法包括：用预定量的溶剂填充主室内的加热容器; 将掩模浸入溶剂填充的加热容器中; 通过将气体供应到室中来将室的内部压力提高到预定水平; 通过在预定温度下将加热容器内的溶剂加热预定的时间，从而将掩模与掩模的表面分离; 并通过收集溶剂分析离子。
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公开(公告)号：US20090191471A1
公开(公告)日：2009-07-30
申请号：US12318510
申请日：2008-12-30
申请人： Dong-Hun Lee , Hae-Young Jeong , Sung-Jae Han , Han-Shin Lee
发明人： Dong-Hun Lee , Hae-Young Jeong , Sung-Jae Han , Han-Shin Lee
CPC分类号： C11D11/0047 , C11D3/3947 , C11D7/12 , C11D7/265 , G03F7/425
摘要： A composition for cleaning a phase shift mask, including an organic acid ammonium salt, wherein a base ionization constant (Kb) of organic acid ions is larger than an acid ionization constant (Ka) of ammonium ions, hydrogen peroxide, and water, and associated methods.
摘要翻译： 一种用于清洗包含有机酸铵盐的相移掩模的组合物，其中有机酸离子的碱电离常数（Kb）大于铵离子，过氧化氢和水的酸离子常数（Ka） 方法。
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8.发明申请公开(公告)号：US20090101811A1
公开(公告)日：2009-04-23
申请号：US12197052
申请日：2008-08-22
申请人： Dong-Hun Lee , Hae-Young Jeong , Byung-Cheol Cha , Sung-Jae Han
发明人： Dong-Hun Lee , Hae-Young Jeong , Byung-Cheol Cha , Sung-Jae Han
IPC分类号： B01D59/44
CPC分类号： G01N1/4055 , G01N30/96 , G01N2001/4061 , G03F1/84 , Y10T436/25125
摘要： A method of analyzing ions adsorbed on a surface of a mask for pattern formation of a semiconductor device, and an apparatus using the same are disclosed. The ion analyzing method includes: filling a heating container within a main chamber with a predetermined amount of a solvent; immersing a mask in the solvent-filled heating container; raising an internal pressure of the chamber to a predetermined level by supplying gas into the chamber; separating ions from a surface of the mask by heating the solvent within the heating container at a predetermined temperature for a predetermined period; and analyzing the ions by collecting the solvent.
摘要翻译： 公开了分析吸附在掩模的表面上用于图案形成半导体器件的离子的方法和使用其的装置。 离子分析方法包括：用预定量的溶剂填充主室内的加热容器; 将掩模浸入溶剂填充的加热容器中; 通过将气体供应到室中来将室的内部压力提高到预定水平; 通过在预定温度下将加热容器内的溶剂加热预定的时间，从而将掩模与掩模的表面分离; 并通过收集溶剂分析离子。
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