公开(公告)号：US20100202272A1

公开(公告)日：2010-08-12

申请号：US12692704

申请日：2010-01-25

申请人： Joo-ho Kim ,  Tao Hong ,  Dae-hwan Kim ,  Seung-jin Oh ,  Sun-rock Choi

发明人： Joo-ho Kim ,  Tao Hong ,  Dae-hwan Kim ,  Seung-jin Oh ,  Sun-rock Choi

IPC分类号： C23C14/34 ,  B32B5/12 ,  G11B7/135

CPC分类号： G11B7/266 ,  B82Y10/00 ,  G11B7/24038 ,  Y10T428/24124

摘要： A method of fabricating an information storage medium, the method including forming a plurality of nanorod recording layers on a substrate by sputtering using a mask having a plurality of nanorod patterns.

摘要翻译： 一种制造信息存储介质的方法，所述方法包括使用具有多个纳米棒图案的掩模通过溅射在衬底上形成多个纳米棒记录层。

公开(公告)号：US20100188959A1

公开(公告)日：2010-07-29

申请号：US12692178

申请日：2010-01-22

申请人： Joo-ho Kim ,  Tao Hong

发明人： Joo-ho Kim ,  Tao Hong

IPC分类号： G11B7/00 ,  B32B3/02

CPC分类号： G11B7/24038 ,  G11B7/1275 ,  G11B2007/0013

摘要： An information storage medium and an apparatus for recording/reproducing the same are provided. The information storage medium is provided in which repetitive recording is performed by using nanorods formed of a material capable of repeatedly changing light absorption.

摘要翻译： 提供了一种信息存储介质及其记录/再现装置。 提供信息存储介质，其中通过使用由能够重复改变光吸收的材料形成的纳米棒进行重复记录。

公开(公告)号：US09140270B2

公开(公告)日：2015-09-22

申请号：US13231993

申请日：2011-09-14

申请人： Tao Hong

发明人： Tao Hong

IPC分类号： F04D29/28 ,  F04D17/02 ,  F04D29/42

CPC分类号： F04D29/282 ,  F04D17/025 ,  F04D29/4226

摘要： The present invention relates to a centrifugal fan assembly and a HVAC-system, comprising a housing, a blower wheel comprising a plurality of fan blades, the blower wheel being rotatably mounted in the housing and constructed to generate an airflow flowing axially into the blower wheel and radially out from the blower wheel, a guiding vane device including a plurality of guiding vanes, the guiding vane device being coupled to the blower wheel and configured to guide the airflow into the blower wheel.

摘要翻译： 本发明涉及离心风扇组件和HVAC系统，其包括壳体，包括多个风扇叶片的鼓风机叶轮，鼓风机叶轮可旋转地安装在壳体中并构造成产生轴向流入鼓风机叶轮的气流 并且从所述鼓风机轮径向地排出导叶装置，所述引导叶片装置包括多个导向叶片，所述导叶装置联接到所述鼓风机叶轮并且构造成将所述气流引导到所述鼓风机叶轮中。

公开(公告)号：US20110310568A1

公开(公告)日：2011-12-22

申请号：US13163200

申请日：2011-06-17

申请人： Tao Hong ,  Markus Thoben

发明人： Tao Hong ,  Markus Thoben

IPC分类号： H05K1/14 ,  H01L29/86

CPC分类号： H05K1/181 ,  G01R1/203 ,  H01L23/647 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L25/16 ,  H01L25/18 ,  H01L27/0207 ,  H01L28/20 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4847 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/8382 ,  H01L2224/8384 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01047 ,  H01L2924/014 ,  H01L2924/0781 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H05K3/222 ,  H05K2201/09663 ,  H05K2201/0969 ,  H05K2201/10022 ,  H05K2201/10166 ,  H05K2203/173 ,  Y02P70/611 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/83205

摘要： A circuit arrangement has a populated circuit carrier and includes a flat insulation carrier having a top side and a patterned metallization layer on the top side and a first power semiconductor chip arranged on a first section of the metallization layer. The first power semiconductor chip has a first lower chip load terminal electrically conductively connected to the first section. A shunt resistor is arranged on a second section of the metallization layer. The shunt resistor has a lower main terminal electrically conductively connected to the second section. An electrically conductive connection is provided between the first section and the second section. The electrically conductive connection includes a constriction between the first section and the second section so that a current which flows between the first lower chip load terminal and the lower main terminal during operation of the circuit arrangement must pass through the constriction.

摘要翻译： 电路装置具有填充电路载体，并且包括在顶侧具有顶侧和图案化金属化层的平坦绝缘载体和布置在金属化层的第一部分上的第一功率半导体芯片。 第一功率半导体芯片具有导电连接到第一部分的第一下部芯片负载端子。 分流电阻器布置在金属化层的第二部分上。 分流电阻器具有导电连接到第二部分的下主端子。 在第一部分和第二部分之间提供导电连接。 导电连接包括第一部分和第二部分之间的收缩部分，使得在电路装置的操作期间在第一下部芯片负载端子和下部主端子之间流动的电流必须通过收缩部。

公开(公告)号：US07567493B2

公开(公告)日：2009-07-28

申请号：US11290593

申请日：2005-12-01

申请人： Tao Hong ,  Chong-sam Chung ,  Tae-kyung Kim ,  Woo-seok Choi

发明人： Tao Hong ,  Chong-sam Chung ,  Tae-kyung Kim ,  Woo-seok Choi

IPC分类号： G11B7/20 ,  G11B7/26

CPC分类号： G11B7/26 ,  G11B7/24038 ,  G11B7/268

摘要： A multilayer recording medium that prevents deterioration of a signal characteristic due to a mirror effect that may occur between recording layers and a method of manufacturing the same, the multilayer recording medium having at least two recording layers, wherein a thickness of at least one spacer layer between adjacent recording layers is different from a thickness of the other spacer layers such that a beam focusing on a recording layer is prevented from focusing on another recording layer corresponding to a mirror layer due to reflection. In the multilayer recording medium, a mirror effect is greatly reduced. In addition, the thickness of only a spacer layer exerting the most significant influence on the mirror effect is changed to prevent the deterioration of signal quality due to the mirror effect, and therefore, the structure of a multilayer recording medium is simplified.

摘要翻译： 一种防止由于记录层之间可能发生的镜面效应引起的信号特性劣化的多层记录介质及其制造方法，所述多层记录介质具有至少两个记录层，其中至少一个间隔层的厚度 相邻记录层之间的距离不同于其它间隔层的厚度，从而防止聚焦在记录层上的光束聚焦于由于反射而对应于镜层的另一个记录层。 在多层记录介质中，镜面效果大大降低。 此外，仅改变对镜效应产生最重要影响的间隔层的厚度，以防止由于镜面效应引起的信号质量的劣化，因此简化了多层记录介质的结构。

公开(公告)号：US20050067500A1

公开(公告)日：2005-03-31

申请号：US10675342

申请日：2003-09-30

申请人： Tao Hong ,  John Savage

发明人： Tao Hong ,  John Savage

IPC分类号： F04D25/08 ,  F04D29/32 ,  F24D3/00

CPC分类号： H02K9/06 ,  F04D25/082 ,  F04D29/329

摘要： An electrically powered axial-flow fan has a hub to house the motor and support the fan blades. Small blades or vanes on the inside of the hub function as a radial-flow blower to draw cooling air through cooling ports on the electric motor housing. The vanes inside the hub cooperate with a flange surrounding the motor to form a low pressure chamber under the hub to improve cooling flow through the motor. This motor cooling air flow is then ejected into the exhaust stream of the axial-flow fan.

摘要翻译： 电动轴流风扇具有容纳电动机并支撑风扇叶片的毂。 轮毂内侧的小叶片或叶片作为径流式鼓风机起作用，以将冷却空气通过电动机壳体上的冷却端口吸入。 轮毂内部的叶片与围绕马达的法兰配合，以在轮毂下方形成低压室，以改善通过马达的冷却流。 然后将该电动机冷却空气流喷射到轴流风扇的排气流中。

公开(公告)号：US09661752B2

公开(公告)日：2017-05-23

申请号：US13163200

申请日：2011-06-17

申请人： Tao Hong ,  Markus Thoben

发明人： Tao Hong ,  Markus Thoben

IPC分类号： H05K7/00 ,  H05K1/18 ,  G01R1/20 ,  H01L23/64 ,  H01L25/07 ,  H01L25/16 ,  H01L25/18 ,  H01L23/00 ,  H01L27/02 ,  H01L49/02 ,  H05K3/22

CPC分类号： H05K1/181 ,  G01R1/203 ,  H01L23/647 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L25/16 ,  H01L25/18 ,  H01L27/0207 ,  H01L28/20 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4847 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/8382 ,  H01L2224/8384 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01047 ,  H01L2924/014 ,  H01L2924/0781 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H05K3/222 ,  H05K2201/09663 ,  H05K2201/0969 ,  H05K2201/10022 ,  H05K2201/10166 ,  H05K2203/173 ,  Y02P70/611 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/83205

摘要： A circuit arrangement has a populated circuit carrier and includes a flat insulation carrier having a top side and a patterned metallization layer on the top side and a first power semiconductor chip arranged on a first section of the metallization layer. The first power semiconductor chip has a first lower chip load terminal electrically conductively connected to the first section. A shunt resistor is arranged on a second section of the metallization layer. The shunt resistor has a lower main terminal electrically conductively connected to the second section. An electrically conductive connection is provided between the first section and the second section. The electrically conductive connection includes a constriction between the first section and the second section so that a current which flows between the first lower chip load terminal and the lower main terminal during operation of the circuit arrangement must pass through the constriction.

公开(公告)号：US20130337154A1

公开(公告)日：2013-12-19

申请号：US14001862

申请日：2010-12-30

申请人： Tao Hong ,  Xiaohong Dong ,  Landong Wang

发明人： Tao Hong ,  Xiaohong Dong ,  Landong Wang

IPC分类号： H01G9/00

CPC分类号： H01G9/0029 ,  H01G9/0032 ,  H01G9/045 ,  H01G9/055 ,  H01G9/07

摘要： A manufacturing method of an anode foil for an aluminum electrolytic capacitor is provided, which comprises a first step of forming a porous oxide film, i.e. subjecting an etched foil having etched holes thereon to an anodic oxidation process to form a porous oxide film on both the outer surface of the etched foil and the inner surface of etched holes, and a second step of forming a dense oxide film, i.e. converting the porous oxide film into the dense oxide film. The method can be used to manufacture an anode foil for various voltage ranges, e.g. an ultra-high voltage anode foil whose voltage is more than 800 vf, and the method can increase specific capacity, reduce power consumption, simplify the process, and increase production efficiency.

摘要翻译： 提供了一种用于铝电解电容器的阳极箔的制造方法，其包括形成多孔氧化膜的第一步骤，即将其上具有蚀刻孔的蚀刻箔经历阳极氧化工艺以在两者上形成多孔氧化膜 蚀刻箔的外表面和蚀刻孔的内表面，以及形成致密氧化膜的第二步骤，即将多孔氧化物膜转化为致密氧化物膜。 该方法可用于制造用于各种电压范围的阳极箔，例如 电压超过800vf的超高压阳极箔，该方法可以提高比容量，降低功耗，简化工艺，提高生产效率。

公开(公告)号：US20120107644A1

公开(公告)日：2012-05-03

申请号：US13291807

申请日：2011-11-08

申请人： Pingshun Zhao ,  Howard W. Ludewig ,  Tao Hong ,  Fernando Martinez Diez ,  Michael Lynn Johnson ,  Kandrap Siddharthbai Patel ,  Zhaolin Hu ,  Steven R. Thompson

发明人： Pingshun Zhao ,  Howard W. Ludewig ,  Tao Hong ,  Fernando Martinez Diez ,  Michael Lynn Johnson ,  Kandrap Siddharthbai Patel ,  Zhaolin Hu ,  Steven R. Thompson

IPC分类号： B32B15/01

CPC分类号： C21D9/50 ,  C21D1/18 ,  C21D1/42 ,  C21D1/60 ,  C21D1/62 ,  C21D9/505 ,  Y02P10/253 ,  Y10T428/12965

摘要： An apparatus for the heat-treating of a heat-hardenable steel cruciform article having a weld seam includes a heating element to heat the weld seam to a point that an austenitic transformation occurs, and a quenching chamber to cool the weld seam, causing the formation of Martensite and an associated expansion. The quenching is rapid since slow quenching may allow a crystalline phase other than martensite to form. The apparatus may comprise rollers operable to convey the welded cruciform article through the apparatus at a speed such that the weld seam is subjected to heating for a predetermined heat time sufficient to cause a formation of martensite there within, and such that the heated portion reaches the quenching chamber and is quenched to create a substantial amount of martensite, e.g., an amount sufficient to cause expansion of the part.

摘要翻译： 具有焊缝的可热硬化钢十字形制品的热处理装置包括将焊缝加热到发生奥氏体相变的点的加热元件和冷却焊缝的淬火室，形成 的马氏体和相关的扩张。 淬火是快速的，因为缓慢淬火可能允许形成马氏体以外的结晶相。 该装置可以包括可操作的辊，其可以以使得焊缝经受加热预定的加热时间足以在其内部形成马氏体的速度将焊接的十字形物品输送穿过设备，并且使得加热部分达到 淬火室并淬火以产生显着量的马氏体，例如足以引起部件膨胀的量。

公开(公告)号：US20100111128A1

公开(公告)日：2010-05-06

申请号：US12539500

申请日：2009-08-11

申请人： Guogang Qin ,  Tao Hong ,  Ting Chen ,  Guangzhao Ran ,  Weixi Chen

发明人： Guogang Qin ,  Tao Hong ,  Ting Chen ,  Guangzhao Ran ,  Weixi Chen

IPC分类号： H01S5/00 ,  H01L21/00 ,  H01L21/04

CPC分类号： B82Y20/00 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/1032 ,  H01S5/34373

摘要： A method for fabricating a selective area metal bonding Si-based laser, optically or electrically pumped includes: forming a Si waveguide area and a bonding area in a Silicon-On-Insulator (SOI) wafer, and forming an isolating structure to separate the Si waveguide area from the bonding area; forming a metal multilayer for bonding, which also acts as ohmic contact layer in the laser when the laser is electrically pumped. A compound semiconductor optical gain structure is prepared by epitaxial growth and etched off the substrate. The compound semiconductor optical gain structure is aligned with the Si waveguide area in the SOI wafer and the compound semiconductor optical gain structure is bonded on the SOI wafer. The selective area metal bonding Si-based laser can be used as a light source in optoelectronic integration and Si photonics. The method may provide simple operation, flexibility, low cost, and low requirement for cleanness of manufacturing environments.

摘要翻译： 用于制造光学或电泵浦的选择区域金属键合Si基激光器的方法包括：在绝缘体上硅（SOI）晶片中形成Si波导区域和接合区域，并形成隔离结构以分离Si 波导区域从接合区域; 形成用于接合的金属多层，当激光器被电泵浦时，其也用作激光器中的欧姆接触层。 化学半导体光学增益结构通过外延生长制备并从衬底上蚀刻掉。 化合物半导体光学增益结构与SOI晶片中的Si波导区域对准，化合物半导体光学增益结构结合在SOI晶片上。 选择性区域金属键合Si基激光器可用作光电子集成和Si光子学中的光源。 该方法可以为制造环境的清洁提供简单的操作，灵活性，低成本和低要求。