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    Method for passivating wafer
    5.
    发明授权
    Method for passivating wafer 失效
    钝化晶圆的方法

    公开(公告)号：US4855160A

    公开(公告)日：1989-08-08

    申请号：US203563

    申请日：1988-05-26

    申请人： Joseph D. Luttmer ,  Cecil J. Davis ,  Patricia B. Smith ,  Rudy L. York

    发明人： Joseph D. Luttmer ,  Cecil J. Davis ,  Patricia B. Smith ,  Rudy L. York

    IPC分类号： H01L21/471 ,  H01L21/473 ,  H01L21/677

    CPC分类号： H01L21/6779 ,  H01L21/471 ,  H01L21/473

    摘要： A high pressure processing apparatus and method which is compatible with a system wherein wafers are largely transported and processed under vacuum. The pressure vessel can be extremely small, i.e. has a total pressurized volume of which almost all interior points are within one or two centimeters of one of the workpiece or wafers which may be loaded into the chamber. HgCdTe is passivated by utilizing oxygen and water vapor for oxidation or a source of sulfur for sulfidization. The wafers and the gases are heated by a heater located on the vertical walls of the process chamber.

    摘要翻译： 一种与其中晶片在真空下大量输送和处理的系统兼容的高压处理设备和方法。 压力容器可以非常小，即具有总加压体积，其几乎所有内部​​点可以装载到腔室中的工件或晶片中的一个或两厘米。 HgCdTe通过利用氧气和水蒸气进行氧化而被钝化，或硫化来源被硫化。 晶片和气体由位于处理室垂直壁上的加热器加热。

    Wafer processing apparatus having independently controllable energy sources
    6.
    发明授权
    Wafer processing apparatus having independently controllable energy sources 失效
    具有独立可控能量源的晶片处理装置

    公开(公告)号：US5138973A

    公开(公告)日：1992-08-18

    申请号：US282917

    申请日：1988-12-05

    申请人： Cecil J. Davis ,  Rhett B. Jucha ,  Joseph D. Luttmer ,  Rudy L. York ,  Lee M. Loewenstein ,  Robert T. Matthews ,  Randall C. Hildenbrand

    发明人： Cecil J. Davis ,  Rhett B. Jucha ,  Joseph D. Luttmer ,  Rudy L. York ,  Lee M. Loewenstein ,  Robert T. Matthews ,  Randall C. Hildenbrand

    IPC分类号： C23C16/48 ,  C23C16/517 ,  C23C16/54

    CPC分类号： C23C16/482 ,  C23C16/517 ,  C23C16/54

    摘要： A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer and controlled independent of the in situ plasma. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator is usefully included between the ultraviolet plasma space and the processing space near the wafer face, so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face.

    摘要翻译： 一种处理装置和方法，其中晶片暴露于由与晶片分离的第一等离子体产生的活化物质，但处于晶片上游的处理气流中，并且还暴露于由第二等离子体产生的等离子体轰击 其具有基本上邻接晶片表面的暗空间。 原位等离子体功率相对较低，远距离等离子体可以产生活化物质，因此可以调整原位等离子体功率水平以优化等离子体轰击。 照亮正在处理的晶片的表面的紫外线是通过等离子体产生的，该等离子体位于真空室内，但远离晶片的表面并独立于原位等离子体进行控制。 设计气体流动系统是有用的，使得紫外线发生等离子体具有其自身的气体进料，并且来自紫外线发生等离子体的反应产物基本上不流动或扩散到晶片面。 紫外等离子体空间与晶片表面附近的处理空间有效地包含透明隔离器，使得紫外线等离子体能够在与晶片面附近使用的真空度稍微不同的真空度下工作。

    Processing method using both a remotely generated plasma and an in-situ plasma with UV irradiation
    8.
    发明授权
    Processing method using both a remotely generated plasma and an in-situ plasma with UV irradiation 失效
    使用远程产生的等离子体和原位等离子体与UV照射的处理方法

    公开(公告)号：US5248636A

    公开(公告)日：1993-09-28

    申请号：US892460

    申请日：1992-06-02

    申请人： Cecil J. Davis ,  Rhett B. Jucha ,  Joseph D. Luttmer ,  Rudy L. York ,  Lee M. Loewenstein ,  Robert T. Matthews ,  Randall C. Hildenbrand

    发明人： Cecil J. Davis ,  Rhett B. Jucha ,  Joseph D. Luttmer ,  Rudy L. York ,  Lee M. Loewenstein ,  Robert T. Matthews ,  Randall C. Hildenbrand

    IPC分类号： C23C16/48 ,  C23C16/517 ,  C23C16/54

    CPC分类号： C23C16/54 ,  C23C16/482 ,  C23C16/517

    摘要： A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator is usefully included between the ultraviolet plasma space and the processing space near the wafer face, so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face, delete but this transparent window is not made thick enough to act as a full vacuum seal.

    摘要翻译： 一种处理装置和方法，其中晶片暴露于由与晶片分离的第一等离子体产生的活化物质，但处于晶片上游的处理气流中，并且还暴露于由第二等离子体产生的等离子体轰击 其具有基本上邻接晶片表面的暗空间。 原位等离子体功率相对较低，远距离等离子体可以产生活化物质，因此可以调整原位等离子体功率水平以优化等离子体轰击。 通过在真空室内而远离晶片表面的等离子体产生照射正在处理的晶片的表面的紫外光。 设计气体流动系统是有用的，使得紫外线发生等离子体具有其自身的气体进料，并且来自紫外线发生等离子体的反应产物基本上不流动或扩散到晶片面。 紫外等离子体空间与晶片表面附近的处理空间之间有效地包含透明隔离器，使得紫外等离子体可以在与晶片表面附近的真空度稍微不同的真空度下进行操作，但是该透明窗口未被制成 足够厚以充当真空密封。

    Method for dry etching openings in integrated circuit layers
    10.
    发明授权
    Method for dry etching openings in integrated circuit layers 失效
    集成电路层干蚀刻开孔方法

    公开(公告)号：US5157000A

    公开(公告)日：1992-10-20

    申请号：US652506

    申请日：1991-02-08

    申请人： Jerome L. Elkind ,  Patricia B. Smith ,  Larry D. Hutchins ,  Joseph D. Luttmer ,  Rudy L. York ,  Julie S. England

    发明人： Jerome L. Elkind ,  Patricia B. Smith ,  Larry D. Hutchins ,  Joseph D. Luttmer ,  Rudy L. York ,  Julie S. England

    IPC分类号： H01L21/465 ,  H01L21/467 ,  H01L21/4757

    CPC分类号： H01L21/465 ,  H01L21/467 ,  H01L21/47573 ,  Y10S148/051

    摘要： A process is disclosed through which vias (50) can be formed by the reaction of an etchant species (52) with a mercury cadmium telluride (HgCdTe) or zinc sulfide (ZnS) layer (42). The activating gases (20) are preferably a hydrogen gas or a methane gas which is excited in a diode plasma reactor (100) which has an RF power source (13) applied to one of two parallel electrodes. The etching occurs in selected areas in a photoresist pattern (44) residing over the ZnS or HgCdTe layer (42). Wet etching the layer (42) with a wet etchant (54) following the dry etching, improves the via (50) by making the walls (48) smoother, and allowing for expansion of the vias (50) to a dimension necessary for proper operation of a HgCdTe-based infrared detector.

    摘要翻译： 公开了通过蚀刻剂物质（52）与碲化汞镉（HgCdTe）或硫化锌（ZnS）层（42）的反应可以形成通孔（50）的方法。 活性气体（20）优选为在二次电等离子体反应器（100）中激发的氢气或甲烷气体，二极管等离子体反应器（100）具有施加到两个平行电极之一的RF电源（13）。 蚀刻发生在驻留在ZnS或HgCdTe层（42）上的光致抗蚀剂图案（44）中的选定区域中。 在干蚀刻之后用湿蚀刻剂（54）湿蚀刻层（42），通过使壁（48）更平滑并允许将通孔（50）膨胀到适当的尺寸所需的尺寸来改善通孔（50） 基于HgCdTe的红外探测器的运行。