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公开(公告)号：US20130164902A1
公开(公告)日：2013-06-27
申请号：US13332816
申请日：2011-12-21
IPC分类号： H01L21/02
CPC分类号： H01L28/92 , H01L21/32133 , H01L27/108 , H01L27/10852 , H01L27/10861 , H01L28/90
摘要： A method of forming capacitors includes forming support material over a substrate. A first capacitor electrode is formed within individual openings in the support material. A first etching is conducted only partially into the support material using a liquid etching fluid to expose an elevationally outer portion of sidewalls of individual of the first capacitor electrodes. A second etching is conducted into the support material using a dry etching fluid to expose an elevationally inner portion of the sidewalls of the individual first capacitor electrodes. A capacitor dielectric is formed over the outer and inner portions of the sidewalls of the first capacitor electrodes. A second capacitor electrode is formed over the capacitor dielectric.
摘要翻译： 形成电容器的方法包括在衬底上形成支撑材料。 第一电容器电极形成在支撑材料中的各个开口内。 使用液体蚀刻流体仅部分地将第一蚀刻部分地进入支撑材料，以暴露第一电容器电极的各个侧壁的正面外侧部分。 使用干蚀刻流体将第二蚀刻进入支撑材料，以暴露各个第一电容器电极的侧壁的正面内部。 在第一电容器电极的侧壁的外部和内部上形成电容器电介质。 在电容器电介质上形成第二电容电极。
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公开(公告)号：US08946043B2
公开(公告)日：2015-02-03
申请号：US13332816
申请日：2011-12-21
IPC分类号： H01L21/02
CPC分类号： H01L28/92 , H01L21/32133 , H01L27/108 , H01L27/10852 , H01L27/10861 , H01L28/90
摘要： A method of forming capacitors includes forming support material over a substrate. A first capacitor electrode is formed within individual openings in the support material. A first etching is conducted only partially into the support material using a liquid etching fluid to expose an elevationally outer portion of sidewalls of individual of the first capacitor electrodes. A second etching is conducted into the support material using a dry etching fluid to expose an elevationally inner portion of the sidewalls of the individual first capacitor electrodes. A capacitor dielectric is formed over the outer and inner portions of the sidewalls of the first capacitor electrodes. A second capacitor electrode is formed over the capacitor dielectric.
摘要翻译： 形成电容器的方法包括在衬底上形成支撑材料。 第一电容器电极形成在支撑材料中的单个开口内。 使用液体蚀刻流体仅部分地将第一蚀刻部分地进入支撑材料，以暴露第一电容器电极的各个侧壁的正面外侧部分。 使用干蚀刻流体将第二蚀刻进入支撑材料，以暴露各个第一电容器电极的侧壁的正面内部。 在第一电容器电极的侧壁的外部和内部上形成电容器电介质。 在电容器电介质上形成第二电容电极。
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公开(公告)号：US08492288B2
公开(公告)日：2013-07-23
申请号：US12136661
申请日：2008-06-10
申请人： Janos Fucsko , Niraj B. Rana , Sandra Tagg , Robert J. Hanson , Gundu M. Sabde , Donald L. Yates , Patrick M. Flynn , Prashant Raghu , Kyle Grant
发明人： Janos Fucsko , Niraj B. Rana , Sandra Tagg , Robert J. Hanson , Gundu M. Sabde , Donald L. Yates , Patrick M. Flynn , Prashant Raghu , Kyle Grant
IPC分类号： H01L21/302 , H01L21/461 , C03C15/00 , C03C25/68 , B08B3/00
CPC分类号： H01L21/30604 , H01L21/02052 , H01L21/31111
摘要： Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath.
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公开(公告)号：US08026148B2
公开(公告)日：2011-09-27
申请号：US13004967
申请日：2011-01-12
IPC分类号： H01L21/20
CPC分类号： H01L28/90 , H01G4/33 , H01L21/28282 , H01L21/31144 , H01L21/32139 , H01L27/10814 , H01L27/10855 , H01L27/11807 , Y10S438/906 , Y10T29/43
摘要： Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.
摘要翻译： 一些实施例包括形成电容器的方法。 存储节点形成在材料内。 存储节点具有沿材料的侧壁。 去除一些材料以暴露侧壁的部分。 侧壁的暴露部分涂覆有未被水润湿的物质。 除去附加材料以暴露侧壁的未涂覆区域。 物质被去除，然后电容器电介质材料沿着存储节点的侧壁形成。 然后在电容器电介质材料上形成电容器电极材料。 一些实施方案包括利用含二氧化硅掩蔽结构的方法，其中掩蔽结构的二氧化硅被未被水润湿的物质涂覆。
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5.发明申请Multi-Material Structures, Semiconductor Constructions and Methods of Forming Capacitors 有权多材料结构，半导体结构和形成电容器的方法公开(公告)号：US20140015097A1
公开(公告)日：2014-01-16
申请号：US13546927
申请日：2012-07-11
CPC分类号： H01L28/75 , B82Y30/00 , H01L27/10808 , H01L27/10852 , H01L28/65 , H01L28/90 , Y10S977/932 , Y10T428/265
摘要： Some embodiments include a method of forming a capacitor. An opening is formed through a silicon-containing mass to a base, and sidewalls of the opening are lined with protective material. A first capacitor electrode is formed within the opening and has sidewalls along the protective material. At least some of the silicon-containing mass is removed with an etch. The protective material protects the first capacitor electrode from being removed by the etch. A second capacitor electrode is formed along the sidewalls of the first capacitor electrode, and is spaced from the first capacitor electrode by capacitor dielectric. Some embodiments include multi-material structures having one or more of aluminum nitride, molybdenum nitride, niobium nitride, niobium oxide, silicon dioxide, tantalum nitride and tantalum oxide. Some embodiments include semiconductor constructions.
摘要翻译： 一些实施例包括形成电容器的方法。 通过含硅物质向基底形成开口，并且开口的侧壁衬有保护材料。 第一电容器电极形成在开口内并具有保护材料的侧壁。 用蚀刻去除至少一些含硅物质。 保护材料保护第一电容器电极不被蚀刻除去。 沿着第一电容器电极的侧壁形成第二电容器电极，并且通过电容器电介质与第一电容器电极间隔开。 一些实施例包括具有氮化铝，氮化钼，氮化铌，氧化铌，二氧化硅，氮化钽和氧化钽中的一种或多种的多材料结构。 一些实施例包括半导体结构。
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公开(公告)号：US08865544B2
公开(公告)日：2014-10-21
申请号：US13546927
申请日：2012-07-11
IPC分类号： H01L21/8242
CPC分类号： H01L28/75 , B82Y30/00 , H01L27/10808 , H01L27/10852 , H01L28/65 , H01L28/90 , Y10S977/932 , Y10T428/265
摘要： Some embodiments include a method of forming a capacitor. An opening is formed through a silicon-containing mass to a base, and sidewalls of the opening are lined with protective material. A first capacitor electrode is formed within the opening and has sidewalls along the protective material. At least some of the silicon-containing mass is removed with an etch. The protective material protects the first capacitor electrode from being removed by the etch. A second capacitor electrode is formed along the sidewalls of the first capacitor electrode, and is spaced from the first capacitor electrode by capacitor dielectric. Some embodiments include multi-material structures having one or more of aluminum nitride, molybdenum nitride, niobium nitride, niobium oxide, silicon dioxide, tantalum nitride and tantalum oxide. Some embodiments include semiconductor constructions.
摘要翻译： 一些实施例包括形成电容器的方法。 通过含硅物质向基底形成开口，并且开口的侧壁衬有保护材料。 第一电容器电极形成在开口内并具有保护材料的侧壁。 用蚀刻去除至少一些含硅物质。 保护材料保护第一电容器电极不被蚀刻除去。 沿着第一电容器电极的侧壁形成第二电容器电极，并且通过电容器电介质与第一电容器电极间隔开。 一些实施例包括具有氮化铝，氮化钼，氮化铌，氧化铌，二氧化硅，氮化钽和氧化钽中的一种或多种的多材料结构。 一些实施例包括半导体结构。
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公开(公告)号：US09012318B2
公开(公告)日：2015-04-21
申请号：US13624272
申请日：2012-09-21
申请人： Jerome A. Imonigie , Prashant Raghu
发明人： Jerome A. Imonigie , Prashant Raghu
IPC分类号： H01L21/336 , C09K13/08 , H01L21/28 , H01L21/3213 , H01L27/115
CPC分类号： C09K13/08 , C09K13/00 , C09K13/04 , C09K13/06 , H01L21/28273 , H01L21/30604 , H01L21/31111 , H01L21/32134 , H01L27/11556
摘要： Methods and compositions for etching polysilicon including aqueous compositions containing nitric acid and ammonium fluoride, and apparatus formed thereby.
摘要翻译： 用于蚀刻多晶硅的方法和组合物，包括含有硝酸和氟化铵的含水组合物，以及由此形成的装置。
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8.发明授权Methods of selectively forming metal-doped chalcogenide materials, methods of selectively doping chalcogenide materials, and methods of forming semiconductor device structures including same 有权选择性地形成金属掺杂的硫族化物材料的方法，选择性掺杂硫族化物材料的方法，以及形成包括它们的半导体器件结构的方法公开(公告)号：US08962460B2
公开(公告)日：2015-02-24
申请号：US13094024
申请日：2011-04-26
CPC分类号： H01L45/1658 , H01L45/085 , H01L45/1233 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/1608 , H01L45/1641
摘要： Methods of selectively forming a metal-doped chalcogenide material comprise exposing a chalcogenide material to a transition metal solution, and incorporating transition metal of the transition solution into the chalcogenide material without substantially incorporating the transition metal into an adjacent material. The chalcogenide material is not silver selenide. Another method comprises forming a chalcogenide material adjacent to and in contact with an insulative material, exposing the chalcogenide material and the insulative material to a transition metal solution, and diffusing transition metal of the transition metal solution into the chalcogenide material while substantially no transition metal diffuses into the insulative material. A method of doping a chalcogenide material of a memory cell with at least one transition metal without using an etch or chemical mechanical planarization process to remove the transition metal from an insulative material of the memory cell is also disclosed, wherein the chalcogenide material is not silver selenide.
摘要翻译： 选择性地形成金属掺杂的硫族化物材料的方法包括将硫族化物材料暴露于过渡金属溶液，并将过渡溶液的过渡金属掺入硫族化物材料中，而基本上不将过渡金属掺入相邻的材料中。 硫族化物材料不是硒化银。 另一种方法包括形成与绝缘材料相邻并与其接触的硫族化物材料，将硫属化物材料和绝缘材料暴露于过渡金属溶液，并将过渡金属溶液的过渡金属扩散到硫属化物材料中，同时基本上没有过渡金属扩散 进入绝缘材料。 还公开了一种使用至少一种过渡金属掺杂存储单元的硫族化物材料而不使用蚀刻或化学机械平坦化工艺以从存储器单元的绝缘材料除去过渡金属的方法，其中硫族化物材料不是银 硒化物
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公开(公告)号：US20140087551A1
公开(公告)日：2014-03-27
申请号：US13624272
申请日：2012-09-21
申请人： Jerome A. IMONIGIE , Prashant Raghu
发明人： Jerome A. IMONIGIE , Prashant Raghu
IPC分类号： C09K13/08 , H01L21/336
CPC分类号： C09K13/08 , C09K13/00 , C09K13/04 , C09K13/06 , H01L21/28273 , H01L21/30604 , H01L21/31111 , H01L21/32134 , H01L27/11556
摘要： Methods and compositions for etching polysilicon including aqueous compositions containing nitric acid and ammonium fluoride, and apparatus formed thereby.
摘要翻译： 用于蚀刻多晶硅的方法和组合物，包括含有硝酸和氟化铵的含水组合物，以及由此形成的装置。
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公开(公告)号：US20130334594A1
公开(公告)日：2013-12-19
申请号：US13524803
申请日：2012-06-15
IPC分类号： H01L29/792 , H01L21/28 , H01L21/306
CPC分类号： H01L21/32135 , H01L21/32134 , H01L27/11524 , H01L27/11556 , H01L27/1157 , H01L27/11582 , H01L29/7889 , H01L29/7926
摘要： Some embodiments include a memory device and a method of forming the memory device. One such memory device includes a string of stacked memory cells. Each of the memory cells in the string includes a charge storage structure and a recessed control gate. The recessed control gate has a substantially smooth surface separated from the charge storage structure by dielectric material. One such method includes etching heavily boron doped polysilicon selective to oxide to form a recessed control gate having a surface with nubs. A smoothing solution is applied to the surface of the recessed control gate to smoothen the nubs. Additional apparatuses and methods are described.
摘要翻译： 一些实施例包括存储器件和形成存储器件的方法。 一个这样的存储器件包括一堆堆叠的存储器单元。 串中的每个存储单元包括电荷存储结构和凹入控制门。 凹陷的控制栅极具有通过介电材料与电荷存储结构分离的基本平滑的表面。 一种这样的方法包括蚀刻对氧化物选择性的重硼掺杂多晶硅以形成具有带有凸块的表面的凹陷控制栅极。 将平滑解决方案应用于凹入控制门的表面以平滑微调。 描述附加的装置和方法。
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