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13 条记录 (耗时 0.021 秒)

    Method and apparatus for growing semiconductor heterostructures
    1.
    发明授权
    Method and apparatus for growing semiconductor heterostructures 失效
    用于生长半导体异质结构的方法和装置

    公开(公告)号：US5254210A

    公开(公告)日：1993-10-19

    申请号：US874779

    申请日：1992-04-27

    申请人： Kenneth A. Jones ,  Joseph R. Flemish ,  Alok Tripathi ,  Vladimir S. Ban

    发明人： Kenneth A. Jones ,  Joseph R. Flemish ,  Alok Tripathi ,  Vladimir S. Ban

    IPC分类号： C23C16/30 ,  C23C16/455 ,  C30B25/02 ,  C30B25/18 ,  C23C16/00

    CPC分类号： C30B25/02 ,  C23C16/301 ,  C23C16/455 ,  C23C16/45561 ,  C30B25/18 ,  C30B29/40

    摘要： A conventional hydride VPE reactor is modified by the addition of a gas switching manifold and the use of three way pneumatic valves in the manifold to alternately direct the flow of reactant gas mixtures into either the reactor or a vent line. With these additions, various predetermined gas mixtures of arsine, phosphine, and hydrogen selected by electronic mass flow controllers (GM1 and GM2) and predetermined gas mixtures of H.sub.2 and HCl (GM3) may be alternately infused into the reactor chamber or vented as desired. When GM3 is injected into the reactor chamber, the content of GaAs of the growing layer increases while the content of In decreases. Given this, when GM3 and GM2 are vented rather than injected into the furnace and GM1 is directed into the furnace, a layer of InGaAsP with a predetermined composition (A) will be deposited. Alternatively, when GM3 and GM2 are co-injected into the reactor and GM1 is be directed to the vent, a layer of InGaAsP of a predetermined composition (B) will be deposited. Therefore, the flow rates of HCl, PH.sub.3 and AsH.sub.3 can be adjusted to produce compositions A and B that correspond to a lattice-matched condition with either InP or GaAs substrate.

    摘要翻译： 传统的氢化物VPE反应器通过添加气体切换歧管和在歧管中使用三通气动阀来交替地将反应气体混合物的流动引导到反应器或排气管线中来进行修改。 通过这些添加，可以将电子质量流量控制器（GM1和GM2）选择的各种预定的胂，膦和氢的气体混合物和H 2和HCl（GM 3）的预定气体混合物交替地输入到反应器室中或根据需要排气。 当GM3被注入到反应器室中时，生长层的GaAs含量增加，而In的含量减少。 考虑到这一点，当GM3和GM2排放而不是注入炉中，GM1被引入炉中时，将沉积具有预定组成（A）的InGaAsP层。 或者，当将GM3和GM2共注入到反应器中并且GM1被引导到排气口时，将沉积预定组成（B）的InGaAsP层。 因此，可以调节HCl，PH3和AsH3的流量，以产生与InP或GaAs衬底的晶格匹配条件相对应的组分A和B.

    Method of growing device quality InP onto an InP substrate using an organometallic precursor in a hot wall reactor
    2.
    发明授权
    Method of growing device quality InP onto an InP substrate using an organometallic precursor in a hot wall reactor 失效
    在热壁反应器中使用有机金属前体将器件质量InP增加到InP衬底上的方法

    公开(公告)号：US5256595A

    公开(公告)日：1993-10-26

    申请号：US19508

    申请日：1993-02-19

    申请人： Joseph R. Flemish ,  Kenneth A. Jones ,  Vladimir S. Ban

    发明人： Joseph R. Flemish ,  Kenneth A. Jones ,  Vladimir S. Ban

    IPC分类号： H01L21/205

    CPC分类号： H01L21/02392 ,  H01L21/02543 ,  H01L21/0262 ,  Y10S148/11

    摘要： An organometallic precursor as for example trimethyl indium (TMI) is co-injected with HCl into a hot wall reactor to form volatile InCl, and PH.sub.3 is used as the phosphorus source. Layers of InP are grown at approximately 8 .mu.m/hr with excellent morphology and good electrical properties. Hall measurements at 77K show background n-type conductivity with n=7.times.10.sup.15 /cm.sup.3 and .mu..sup.S 34,000 cm.sub.2 /V-s. The method is capable of growing ternary and quaternary heterostructures with thin layers and abrupt junctions.

    摘要翻译： 将有机金属前体，例如三甲基铟（TMI）与HCl共注入到热壁反应器中以形成挥发性InCl，并且使用PH 3作为磷源。 InP层以约8μm/ hr生长，具有优异的形态和良好的电性能。 在77K的霍尔测量显示n = 7×10 15 / cm 3和mu S 34,000cm 2 / V-s的背景n型导电性。 该方法能够生长具有薄层和突变结的三元和四元异质结构。

    Radiation heated reactor for chemical vapor deposition on substrates
    3.
    发明授权
    Radiation heated reactor for chemical vapor deposition on substrates 失效
    用于化学气相沉积在衬底上的辐射加热反应器

    公开(公告)号：US4263872A

    公开(公告)日：1981-04-28

    申请号：US117236

    申请日：1980-01-31

    申请人： Vladimir S. Ban

    发明人： Vladimir S. Ban

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C13/08

    CPC分类号： C23C16/45578 ,  C23C16/455 ,  C23C16/4584

    摘要： A slitted tubular member within a reaction chamber encloses a stack of spaced substrates on the surfaces of which are deposited material by chemical vapor-deposition. The tubular member is formed of susceptor material adapted for heating by RF energy or by electrically heated wire. Oscillating means disposed in the slit direct a gas flow into the spacings between the substrates, the stack of which is spaced from the tubular member. Oscillating means disposed in the slit direct a gas flow into the spacings between the substrates, the stack of which is spaced from the tubular member.

    摘要翻译： 反应室内的一个开口的管状构件包围了一叠隔开的衬底，其表面是通过化学气相沉积沉积的材料。 管状构件由适应于通过RF能量或通过电加热线加热的基座材料形成。 设置在狭缝中的摆动装置将气流引导到基板之间的间隔中，其中的堆叠与管状构件间隔开。 设置在狭缝中的摆动装置将气流引导到基板之间的间隔中，其中的堆叠与管状构件间隔开。

    Methods for manufacturing volume Bragg grating elements
    9.
    发明授权
    Methods for manufacturing volume Bragg grating elements 有权
    制造体积布拉格光栅元件的方法

    公开(公告)号：US07792003B2

    公开(公告)日：2010-09-07

    申请号：US12127590

    申请日：2008-05-27

    申请人： Boris Leonidovich Volodin ,  Sergei Dolgy ,  Vladimir S. Ban

    发明人： Boris Leonidovich Volodin ,  Sergei Dolgy ,  Vladimir S. Ban

    IPC分类号： G11B7/00

    CPC分类号： G03H1/0408 ,  G02B5/203 ,  G02B5/32 ,  G03H1/0248 ,  G03H1/04 ,  G03H2001/0439 ,  G03H2223/18

    摘要： Methods for recording volume Bragg grating structures having a target wavelength are disclosed. Such a method may include providing a photosensitive recording medium, bringing a first face of the recording medium into contact with a face of a prism, the prism being made of a material that is transparent at a recording wavelength, and recording a Bragg grating onto the recording medium by exposing the prism to an incident light wave at the recording wavelength.

    摘要翻译： 公开了用于记录具有目标波长的体积布拉格光栅结构的方法。 这种方法可以包括提供光敏记录介质，使记录介质的第一面与棱镜的表面接触，所述棱镜由在记录波长处是透明的材料制成，并将布拉格光栅记录到 通过将棱镜暴露于记录波长的入射光波来记录介质。