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公开(公告)号：US06833306B2
公开(公告)日：2004-12-21
申请号：US10202187
申请日：2002-07-24
申请人： Joseph W. Lyding , Karl Hess , Jinju Lee
发明人： Joseph W. Lyding , Karl Hess , Jinju Lee
IPC分类号： H01L21336
CPC分类号： H01L29/513 , H01L21/28176 , H01L21/3003 , H01L21/324 , H01L29/518 , Y10S438/909
摘要： Semiconductor device annealing process with deuterium at superatmospheric pressures to improve reduction of the effects of hot carrier stress during device operation, and devices produced thereby.
摘要翻译： 在超大气压下用氘的半导体器件退火工艺，以改善在器件操作期间热载流子应力的影响的降低，以及由此产生的器件。
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2.发明授权Forming of deuterium containing nitride spacers and fabrication of semiconductor devices 失效含氘氮化物间隔物的形成和半导体器件的制造
公开(公告)号：US6147014A
公开(公告)日：2000-11-14
申请号：US20565
申请日：1998-01-16
申请人： Joseph W. Lyding , Karl Hess
发明人： Joseph W. Lyding , Karl Hess
CPC分类号： H01L21/28176 , H01L21/28202 , H01L21/3003 , H01L21/324 , H01L29/513 , H01L29/518 , H01L21/28194 , H01L29/517 , Y10S438/91 , Y10S438/974
摘要： Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices which can be prepared by such processes.
摘要翻译： 描述了用于调节具有氘的半导体器件以改善操作特性并减少在器件操作过程中发生的去钝化的优选方法。 还描述了可以通过这些方法制备的半导体器件。
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公开(公告)号：US5872387A
公开(公告)日：1999-02-16
申请号：US586411
申请日：1996-01-16
申请人： Joseph W. Lyding , Karl Hess
发明人： Joseph W. Lyding , Karl Hess
CPC分类号： H01L21/28176 , H01L21/28202 , H01L21/3003 , H01L21/324 , H01L29/513 , H01L29/518 , H01L21/28194 , H01L29/517 , Y10S438/91 , Y10S438/974
摘要： Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices which can be prepared by such processes.
摘要翻译： 描述了用于调节具有氘的半导体器件以改善操作特性并减少在器件操作过程中发生的去钝化的优选方法。 还描述了可以通过这些方法制备的半导体器件。
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公开(公告)号：US06888204B1
公开(公告)日：2005-05-03
申请号：US09160657
申请日：1998-09-25
申请人： Joseph W. Lyding , Karl Hess
发明人： Joseph W. Lyding , Karl Hess
IPC分类号： H01L21/28 , H01L21/30 , H01L21/324 , H01L29/51 , H01L29/76 , H01L31/113
CPC分类号： H01L21/28202 , H01L21/28176 , H01L21/28194 , H01L21/3003 , H01L21/324 , H01L29/513 , H01L29/517 , H01L29/518
摘要： Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices which can be prepared by such processes.
摘要翻译： 描述了用于调节具有氘的半导体器件以改善操作特性并减少在器件操作过程中发生的去钝化的优选方法。 还描述了可以通过这些方法制备的半导体器件。
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公开(公告)号：US06444533B1
公开(公告)日：2002-09-03
申请号：US09518802
申请日：2000-03-03
申请人： Joseph W. Lyding , Karl Hess
发明人： Joseph W. Lyding , Karl Hess
IPC分类号： H01L21331
CPC分类号： H01L21/28176 , H01L21/28194 , H01L21/28202 , H01L21/3003 , H01L21/324 , H01L29/513 , H01L29/517 , H01L29/518 , Y10S438/91 , Y10S438/974
摘要： Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices which can be prepared by such processes.
摘要翻译： 描述了用于调节具有氘的半导体器件以改善操作特性并减少在器件操作过程中发生的去钝化的优选方法。 还描述了可以通过这些方法制备的半导体器件。
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公开(公告)号：US08070920B2
公开(公告)日：2011-12-06
申请号：US11740678
申请日：2007-04-26
IPC分类号： C23C14/34
摘要： The invention provides methods for sharpening the tip of an electrical conductor. The methods of the invention are capable of producing tips with an apex radius of curvature less than 2 nm. The methods of the invention are based on simultaneous direction of ionized atoms towards the apex of a previously sharpened conducting tip and application of an electric potential difference to the tip. The sign of the charge on the ions is the same as the sign of the electric potential. The methods of the invention can be used to sharpen metal wires, metal wires tipped with conductive coatings, multi-walled carbon nanotubes, semiconducting nanowires, and semiconductors in other forms.
摘要翻译： 本发明提供了用于磨削电导体尖端的方法。 本发明的方法能够产生顶点曲率小于2nm的尖端。 本发明的方法是基于离子化原子朝向先前锐化的导电尖端的顶点的同时方向，以及向尖端施加电势差。 离子上的电荷的符号与电位的符号相同。 本发明的方法可用于锐化金属线，金属导线尖端与导电涂层，多壁碳纳米管，半导体纳米线和其他形式的半导体。
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公开(公告)号：US20080105539A1
公开(公告)日：2008-05-08
申请号：US11740678
申请日：2007-04-26
IPC分类号： C23C14/46
摘要： The invention provides methods for sharpening the tip of an electrical conductor. The methods of the invention are capable of producing tips with an apex radius of curvature less than 2 nm. The methods of the invention are based on simultaneous direction of ionized atoms towards the apex of a previously sharpened conducting tip and application of an electric potential difference to the tip. The sign of the charge on the ions is the same as the sign of the electric potential. The methods of the invention can be used to sharpen metal wires, metal wires tipped with conductive coatings, multi-walled carbon nanotubes, semiconducting nanowires, and semiconductors in other forms.
摘要翻译： 本发明提供了用于磨削电导体尖端的方法。 本发明的方法能够产生顶点曲率小于2nm的尖端。 本发明的方法是基于离子化原子朝向先前锐化的导电尖端的顶点的同时方向，以及向尖端施加电势差。 离子上的电荷的符号与电位的符号相同。 本发明的方法可用于锐化金属线，金属导线尖端与导电涂层，多壁碳纳米管，半导体纳米线和其他形式的半导体。
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公开(公告)号：US08819861B2
公开(公告)日：2014-08-26
申请号：US13292714
申请日：2011-11-09
IPC分类号： G01Q70/16
摘要： The invention provides methods for sharpening the tip of an electrical conductor. The methods of the invention are capable of producing tips with an apex radius of curvature less than 2 nm. The methods of the invention are based on simultaneous direction of ionized atoms towards the apex of a previously sharpened conducting tip and application of an electric potential difference to the tip. The sign of the charge on the ions is the same as the sign of the electric potential. The methods of the invention can be used to sharpen metal wires, metal wires tipped with conductive coatings, multi-walled carbon nanotubes, semiconducting nanowires and semiconductors in other forms.
摘要翻译： 本发明提供了用于磨削电导体尖端的方法。 本发明的方法能够产生顶点曲率小于2nm的尖端。 本发明的方法是基于离子化原子朝向先前锐化的导电尖端的顶点的同时方向，以及向尖端施加电势差。 离子上的电荷的符号与电位的符号相同。 本发明的方法可用于锐化金属丝，金属丝，其具有导电涂层，多壁碳纳米管，半导体纳米线和其他形式的半导体。
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9.发明授权Electrochemical cells comprising laminar flow induced dynamic conducting interfaces, electronic devices comprising such cells, and methods employing same 失效包括层流引导的动态导电界面的电化学电池，包含这种电池的电子器件，以及使用它们的方法公开(公告)号：US07651797B2
公开(公告)日：2010-01-26
申请号：US11193005
申请日：2005-07-29
CPC分类号： H01M8/00 , H01M8/02 , H01M8/0258 , H01M8/04186 , H01M8/04194 , H01M8/04197 , H01M8/04276 , H01M8/08 , H01M8/1011 , H01M8/22 , H01M14/00 , H01M2250/30 , H01M2300/0005 , H01M2300/0025 , Y02B90/18 , Y02E60/523
摘要： An electrochemical cell is described that includes (a) a first electrode; (b) a second electrode; and (c) a channel contiguous with at least a portion of the first and the second electrodes. When a first liquid is contacted with the first electrode, a second liquid is contacted with the second electrode, and the first and the second liquids flow through the channel, a parallel laminar flow is established between the first and the second liquids. Electronic devices containing such electrochemical cells and methods for their use are also described.
摘要翻译： 描述了一种电化学电池，其包括（a）第一电极; （b）第二电极; 和（c）与第一和第二电极的至少一部分邻接的通道。 当第一液体与第一电极接触时，第二液体与第二电极接触，并且第一和第二液体流过通道，在第一和第二液体之间建立平行的层流。 还描述了包含这种电化学电池的电子器件及其使用方法。
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10.发明授权Electrochemical cells comprising laminar flow induced dynamic conducting interfaces, electronic devices comprising such cells, and methods employing same 失效包括层流引导的动态导电界面的电化学电池，包含这种电池的电子器件，以及使用它们的方法公开(公告)号：US06713206B2
公开(公告)日：2004-03-30
申请号：US10053187
申请日：2002-01-14
IPC分类号： H01M214
CPC分类号： H01M8/22 , H01M8/02 , H01M8/0258 , H01M8/0271 , H01M8/04186 , H01M8/08 , H01M8/1011 , Y02E60/523
摘要： An electrochemical cell is described that includes (a) a first electrode; (b) a second electrode; and (c) a channel contiguous with at least a portion of the first and the second electrodes. When a first liquid is contacted with the first electrode, a second liquid is contacted with the second electrode, and the first and the second liquids flow through the channel, a parallel laminar flow is established between the first and the second liquids. Electronic devices containing such electrochemical cells and methods for their use are also described.
摘要翻译： 描述了一种电化学电池，其包括（a）第一电极; （b）第二电极; 和（c）与第一和第二电极的至少一部分邻接的通道。 当第一液体与第一电极接触时，第二液体与第二电极接触，并且第一和第二液体流过通道，在第一和第二液体之间建立平行的层流。 还描述了包含这种电化学电池的电子器件及其使用方法。
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