公开(公告)号：US07494936B2

公开(公告)日：2009-02-24

申请号：US11129578

申请日：2005-05-16

申请人： Yair Ein-Eli ,  David Starosvetsky ,  Joseph Yahalom

发明人： Yair Ein-Eli ,  David Starosvetsky ,  Joseph Yahalom

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C25F3/12 ,  H01L21/3063

摘要： A method for electrochemical etching of a semiconductor material using positive potential dissolution (PPD) in solutions that do not contain hydrofluoric acid (HF-free solutions). The method includes immersing an as-cut semiconductor material in an etching solution, and positive biasing at atypically highly positive (anodic) potentials, thereby significantly increasing the value of the anodic current density (measured as A/cm2) of the semiconductor material. The application of positive biasing at atypically highly positive (anodic) potentials, is combined with specifically controlling and directing illumination on the semiconductor material surface contacted and wetted by the etching solution. This is done for a necessary and sufficient period of time to enable a positive synergistic effect on the rate and extent of etching of the semiconductor material therefrom.

摘要翻译： 在不含氢氟酸（无HF溶液）的溶液中使用正电位溶解（PPD）对半导体材料进行电化学蚀刻的方法。 该方法包括将切割的半导体材料浸入蚀刻溶液中，并且以非常高的正（阳极）电位进行正偏压，从而显着提高半导体材料的阳极电流密度（以A / cm 2测量）的值。 在非常高的正（阳极）电位下施加正偏压，与在蚀刻溶液接触和润湿的半导体材料表面上特别地控制和引导照明相结合。 这是为了实现对半导体材料的蚀刻速率和程度的积极的协同效应而进行的必要和充分的时间段。

公开(公告)号：US5382347A

公开(公告)日：1995-01-17

申请号：US966975

申请日：1992-10-26

申请人： Joseph Yahalom

发明人： Joseph Yahalom

IPC分类号： C25D11/12 ,  C25D11/26 ,  C25D11/34

CPC分类号： C25D11/26 ,  C25D11/12 ,  Y10S205/917

摘要： A method for producing protecting layers on a metal selected from aluminum, titanium and zirconium, or alloys thereof, involves at least two anodic oxidation steps producing oxide layers and a thermal treatment which is carried out before or simultaneously with last anodic oxidation step. The treated metal according to the invention is protected even at high temperatures and under conditions of thermal cycling.

摘要翻译： 在选自铝，钛和锆或其合金的金属上制备保护层的方法包括至少两个阳极氧化步骤，产生氧化物层和在最后的阳极氧化步骤之前或同时进行的热处理。 根据本发明的被处理金属即使在高温和热循环条件下也被保护。

公开(公告)号：US5057388A

公开(公告)日：1991-10-15

申请号：US447752

申请日：1989-12-08

申请人： Joseph Yahalom

发明人： Joseph Yahalom

IPC分类号： G03F1/22

CPC分类号： G03F1/22 ,  Y10S430/168

摘要： A method of obtaining a mask for X-ray lithography having a thin oxide film supported on an annular silicon base includes the following steps:(a) deposition of an oxide layer such as titania or zirconia, on a silicon or copper substrate;(b) etching selectively a portion of the backside of the substrate, obtaining a membrane on the etched portion; and(c) obtaining a pattern delineation through a photoresist on the membrane framed by the silicon or copper substrate.The mask prepared according to the present invention does not suffer from any distortion and preserves its accuracy even under the stresses incurred during the mask preparation and use.

摘要翻译： 获得具有负载在环状硅基底上的薄氧化膜的X射线光刻用掩模的方法包括以下步骤：（a）在硅或铜基底上沉积二氧化钛或氧化锆等氧化物层; （b）选择性地蚀刻衬底背面的一部分，获得蚀刻部分上的膜; 和（c）通过由硅或铜基底构成的膜上的光致抗蚀剂获得图案描绘。 根据本发明制备的掩模即使在掩模制备和使用期间产生的应力下也不会遭受任何变形并保持其精度。

公开(公告)号：US5158663A

公开(公告)日：1992-10-27

申请号：US783023

申请日：1991-10-25

申请人： Joseph Yahalom

发明人： Joseph Yahalom

IPC分类号： C25D11/12 ,  C25D11/18 ,  C25D11/26

CPC分类号： C25D11/12 ,  C25D11/26 ,  Y10S205/917

摘要： A method for producing protecting layers on a metal selected from aluminum, titanium and zirconium, or alloys thereof, involves at least two anodic oxidation steps producing oxide layers and a thermal treatment which is carried out before the last anodic oxidation step. The treated metal according to the invention is protected even at high temperatures and under conditions of thermal cycling.

公开(公告)号：US5096791A

公开(公告)日：1992-03-17

申请号：US442868

申请日：1989-11-29

申请人： Joseph Yahalom

发明人： Joseph Yahalom

IPC分类号： G03F1/22 ,  H01L21/027

CPC分类号： G03F1/22 ,  Y10S430/168

摘要： A method of obtaining a mask for X-ray lithography having a thin oxidized metal membrane supported on an annular silicon base. The method consists of the following steps: (a) deposition of a metal layer on a silicon wafer; (b) oxidation of the metal layer to form a continuous thin oxide layer; (c) etching selectively a portion of the backside of said substrate, obtaining a thin membrane of oxidized metal at the etched portion; and (d) obtaining a pattern delineation through a photoresist on said membrane framed by the silicon substrate. A most preferred deposited metal is aluminum which is converted to aluminum oxide. Then a portion of the silicon substrate is removed in order to expose the aluminum oxide membrane attached to the remaining silicon substrate. The mask prepared according to the present invention does not suffer from any distortion and preserves its accuracy even under the stresses incurred during the mask preparation and use.

摘要翻译： 一种获得具有负载在环状硅基底上的薄氧化金属膜的X射线光刻掩模的方法。 该方法包括以下步骤：（a）在硅晶片上沉积金属层; （b）金属层的氧化以形成连续的薄氧化物层; （c）选择性地蚀刻所述衬底的背面的一部分，在蚀刻部分获得氧化金属薄膜; 和（d）通过由硅衬底框架的所述膜上的光致抗蚀剂获得图案描绘。 最优选的沉积金属是铝，其被转化为氧化铝。 然后去除硅衬底的一部分以暴露附着到剩余硅衬底的氧化铝膜。 根据本发明制备的掩模即使在掩模制备和使用期间产生的应力下也不会遭受任何变形并保持其精度。

公开(公告)号：US4652348A

公开(公告)日：1987-03-24

申请号：US815860

申请日：1986-01-03

申请人： Joseph Yahalom ,  Ori Zadok

发明人： Joseph Yahalom ,  Ori Zadok

IPC分类号： C25D3/56 ,  C25D3/58 ,  C25D5/14 ,  C25D5/18 ,  C25D5/10 ,  C25D5/12

CPC分类号： C25D5/18 ,  C25D3/58 ,  C25D5/14 ,  Y10S204/09

摘要： The present invention relates to a method for the electrodeposition of an ordered alloy structured in alternate discrete layers said alloys possessing high elastic modulus and adjustable magnetic susceptibility. According to the invention, the electrodeposition of at least two metals, characterized by a redox potential gap of at least 0.1 V between said metals, is obtained by the pulse plating technique with a frequency in the range of 0.02 Hertz to 15 Hertz. The concentrations of the noblest metal in the electrodeposition solution should be in the range of 0.001M to 2.0M while that of the less noble metal is about its saturation at room temperature. The discrete layers obtained according to the method are less than 90 Angstroms thickness, being substantially pure. Examples of the metals to be electrodeposited according to the invention are copper-nickel; copper-palladium; nickel-gold; copper-nickel-iron and corresponding alloys with cobalt or iron replacing nickel.

公开(公告)号：US4284482A

公开(公告)日：1981-08-18

申请号：US189092

申请日：1980-09-22

申请人： Joseph Yahalom

发明人： Joseph Yahalom

IPC分类号： C25D5/48 ,  C25F1/00 ,  C25F1/02

CPC分类号： C25F1/00 ,  C25D5/48

摘要： A process is described for treating palladium and palladium alloys so as to render them ductile and wear resistant. The process involves an electrochemical treatment which is relatively easy to carry out and is suitable for commerical use. Palladium surfaces and films treated with this process are quite suitable for a variety of applications including electrical contact applications as in switches, relays, connectors, etc.

摘要翻译： 描述了一种处理钯和钯合金以使其延性和耐磨的方法。 该方法涉及电化学处理，其相对容易进行并且适于商业使用。 用这种方法处理的钯表面和薄膜非常适用于各种应用，包括开关，继电器，连接器等电接触应用。

公开(公告)号：US20060175201A1

公开(公告)日：2006-08-10

申请号：US11052443

申请日：2005-02-07

申请人： Hooman Hafezi ,  Joseph Behnke ,  Aron Rosenfeld ,  Timothy Webb ,  Joseph Yahalom ,  Christopher McGuirk

发明人： Hooman Hafezi ,  Joseph Behnke ,  Aron Rosenfeld ,  Timothy Webb ,  Joseph Yahalom ,  Christopher McGuirk

IPC分类号： C25D5/18

CPC分类号： C25D5/18 ,  C25D5/34 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76877

摘要： A method for immersing a substrate into a plating solution. In one embodiment, the method includes applying a first waveform to the substrate as the substrate is being immersed into the plating solution, stopping the application of the first waveform to the substrate as soon as the substrate is fully immersed inside the plating solution, and applying a second waveform to the substrate prior to the substrate being situated into a plating position.

摘要翻译： 将基板浸入电镀液中的方法。 在一个实施例中，该方法包括当衬底浸入电镀溶液中时将第一波形施加到衬底，一旦衬底完全浸入电镀溶液中，就停止向衬底施加第一波形，并施加 在衬底位于电镀位置之前的到衬底的第二波形。

公开(公告)号：US20050148198A1

公开(公告)日：2005-07-07

申请号：US10750969

申请日：2004-01-05

申请人： Yair Ein-Eli ,  David Starosvetsky ,  Joseph Yahalom

发明人： Yair Ein-Eli ,  David Starosvetsky ,  Joseph Yahalom

IPC分类号： B23H3/00 ,  H01L21/00

CPC分类号： H01L31/18 ,  C25F3/12 ,  H01L31/02363 ,  Y02E10/50

摘要： Texturing a semiconductor material using negative potential dissolution (NPD), by applying highly negative (cathodic) potentials during conditions of wet etching, and a textured semiconductor material formed therefrom. Semiconductor material is subjected to wet etching conditions, negative biasing at more negative than −60 V, and, specifically controlled and directed illumination by optically processed non-ambient light, resulting in significant increase in values of cathodic current density, and, rate and extent of texturing, of the semiconductor material as a function of time. As cut unpolished semiconductor material is subjected to wet etching conditions and negative biasing, during non-specifically controlled and directed illumination by unprocessed ambient light. Illumination of the as cut unpolished semiconductor material is not needed for increasing values of cathodic current density, and, rate and extent of the texturing, and therefore, upon type of textured as cut unpolished semiconductor material formed therefrom. Particularly applicable to manufacturing solar cells from semiconductor materials.

摘要翻译： 使用负电位溶解（NPD），通过在湿蚀刻条件期间施加高负（阴极）电位和由其形成的织构化的半导体材料来纹理化半导体材料。 半导体材料经受湿蚀刻条件，负偏压大于-60V，特别是通过光学处理的非环境光进行控制和定向照明，导致阴极电流密度值的显着增加，以及速率和程度 的纹理，作为时间的函数的半导体材料。 在未经处理的环境光的非特异性控制和定向照明期间，切割未抛光的半导体材料经受湿蚀刻条件和负偏压。 为了提高阴极电流密度的值，以及纹理化的速率和程度，因此不需要对切割的未抛光的半导体材料照明，因此，由其形成的纹理切割未抛光的半导体材料的类型。 特别适用于从半导体材料制造太阳能电池。

公开(公告)号：US06905622B2

公开(公告)日：2005-06-14

申请号：US10117712

申请日：2002-04-03

申请人： Deenesh Padhi ,  Joseph Yahalom ,  Sivakami Ramanathan ,  Chris R. McGuirk ,  Srinivas Gandikota ,  Girish Dixit

发明人： Deenesh Padhi ,  Joseph Yahalom ,  Sivakami Ramanathan ,  Chris R. McGuirk ,  Srinivas Gandikota ,  Girish Dixit

IPC分类号： C23C18/16 ,  H01L21/02 ,  H01L21/285 ,  H01L21/288 ,  H01L21/306 ,  H01L21/321 ,  H01L21/768 ,  B44C1/22 ,  B05D3/04 ,  B05D3/10

CPC分类号： H01L21/02074 ,  C23C18/1694 ,  C23C18/1831 ,  C23C18/1834 ,  C23C18/1851 ,  C23C18/1879 ,  C23C18/1882 ,  C23C18/1893 ,  C23C18/31 ,  C23C18/34 ,  C23C18/36 ,  C23C18/50 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76874 ,  H01L2221/1089

摘要： Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a conductive material on the initiation layer by exposing the initiation layer to an electroless solution. The method may further comprise etching the substrate surface with an acidic solution and cleaning the substrate of the acidic solution prior to depositing the initiation layer. The initiation layer may be formed by exposing the substrate surface to a noble metal electroless solution or a borane-containing solution. The conductive material may be deposited with a borane-containing reducing agent. The conductive material may be used as a passivation layer, a barrier layer, a seed layer, or for use in forming a metal silicide layer.