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1.发明授权公开(公告)号：US07087112B1
公开(公告)日：2006-08-08
申请号：US10725869
申请日：2003-12-02
IPC分类号： C30B29/38
CPC分类号： C30B29/403 , C30B23/00
摘要： An apparatus and method for fabricating a mount for an aluminum nitride (AlN) seed for single crystal aluminum nitride growth is provided. A holder having a proximal base and wall portions extending therefrom is fabricated from crystal growth crucible material, and defines an internal cavity. An AlN seed is placed within the holder, and placed within a nitrogen atmosphere at a temperature at or exceeding the melting point of a suitable material capable of forming a nitride ceramic by nitridation, such as aluminum. Pellets fabricated from this material are dropped into the holder and onto the seed, so that they melt and react with the nitrogen atmosphere to form a nitride ceramic. The seed is effectively molded in-situ with the ceramic, so that the ceramic and holder forms a closely conforming holder for the seed, suitable for single crystal AlN growth.
摘要翻译： 提供了一种用于制造用于单晶氮化铝生长的氮化铝（AlN）种子的安装件的装置和方法。 具有近端基部和从其延伸的壁部分的保持器由晶体生长坩埚材料制成，并且限定内部空腔。 将AlN种子放置在保持器内，并且在氮气气氛中放置在能够通过氮化形成氮化物陶瓷的合适材料的熔点或超过其熔点的温度，例如铝。 将由该材料制成的颗粒滴入保持器和种子上，使其熔融并与氮气气氛反应形成氮化物陶瓷。 种子与陶瓷有效地原位成型，使得陶瓷和保持器形成适合于单晶AlN生长的种子的紧密配合的保持器。
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公开(公告)号：US07323414B2
公开(公告)日：2008-01-29
申请号：US11363816
申请日：2006-02-28
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/02024 , B24B37/0056 , B24B37/044 , B24B49/006 , H01L21/02052
摘要： According to one aspect of the invention, an improved process for preparing a surface of substrate is provided wherein the surface of the substrate is prepared for a chemical mechanical polishing (CMP) process, the CMP process is performed on the surface of the substrate, and the surface of the substrate is finished to clear the substrate surface of any active ingredients from the CMP process. Also, an improved substrate produced by the method is provided. According to one aspect of the invention, particular polishing materials and procedures may be used that allow for increased quality of AlN substrate surfaces.
摘要翻译： 根据本发明的一个方面，提供了一种用于制备衬底表面的改进方法，其中衬底的表面准备用于化学机械抛光（CMP）工艺，在衬底的表面上进行CMP工艺，以及 完成基材的表面以从CMP工艺中清除任何活性成分的基材表面。 此外，提供了通过该方法制备的改进的基板。 根据本发明的一个方面，可以使用允许增加AlN衬底表面质量的特定抛光材料和程序。
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公开(公告)号：US07037838B2
公开(公告)日：2006-05-02
申请号：US10300481
申请日：2002-11-20
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/02024 , B24B37/0056 , B24B37/044 , B24B49/006 , H01L21/02052
摘要： According to one aspect of the invention, an improved process for preparing a surface of substrate is provided wherein the surface of the substrate is prepared for a chemical mechanical polishing (CMP) process, the CMP process is performed on the surface of the substrate, and the surface of the substrate is finished to clear the substrate surface of any active ingredients from the CMP process. Also, an improved substrate produced by the method is provided. According to one aspect of the invention, particular polishing materials and procedures may be used that allow for increased quality of AlN substrate surfaces.
摘要翻译： 根据本发明的一个方面，提供了一种用于制备衬底表面的改进方法，其中衬底的表面准备用于化学机械抛光（CMP）工艺，在衬底的表面上进行CMP工艺，以及 完成基材的表面以从CMP工艺中清除任何活性成分的基材表面。 此外，提供了通过该方法制备的改进的基板。 根据本发明的一个方面，可以使用允许增加AlN衬底表面质量的特定抛光材料和程序。
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公开(公告)号：US20150275393A1
公开(公告)日：2015-10-01
申请号：US14684754
申请日：2015-04-13
申请人： Robert T. Bondokov , Leo J. Schowalter , Kenneth Morgan , Glen A. Slack , Shailaja P. Rao , Shawn Robert Gibb
发明人： Robert T. Bondokov , Leo J. Schowalter , Kenneth Morgan , Glen A. Slack , Shailaja P. Rao , Shawn Robert Gibb
CPC分类号： C30B23/025 , C30B23/00 , C30B29/403 , Y10T428/2982
摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
摘要翻译： 具有面状平面缺陷密度的纳米氮化铝的单晶（AlN）为100cm-2。 用于生长单晶氮化铝的方法包括熔融铝箔以均匀地湿一层铝基，该基底形成AlN种子保持器的一部分，用于AlN种子用于AlN生长。 保持器可以基本上由基本上不可渗透的背板组成。
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5.发明授权Large aluminum nitride crystals with reduced defects and methods of making them 有权具有减少缺陷的大型氮化铝晶体和制造它们的方法公开(公告)号：US08349077B2
公开(公告)日：2013-01-08
申请号：US11605192
申请日：2006-11-28
IPC分类号： C30B23/00
CPC分类号： C30B33/02 , B28D5/00 , C23C16/34 , C30B23/00 , C30B23/02 , C30B25/02 , C30B25/08 , C30B25/10 , C30B25/18 , C30B29/403 , H01L21/0201 , H01L21/02389 , H01L21/0254 , H01L21/30625 , Y10T428/21
摘要： Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm−2 and an inclusion density below 104 cm−3 and/or a MV density below 104 cm−3.
摘要翻译： 降低AlN中的微孔（MV）密度改善了与晶体生长期间的开裂有关的许多问题，抛光期间的蚀刻坑产生，AlN晶片中的光学透明度的降低以及可能的AlN的外延生长期间的生长凹坑形成和/ 或AlGaN。 这有助于实际的晶体生产策略和形成具有低缺陷密度（例如，位错密度低于104cm -2）和包含密度低于104cm -3和/或低于104cm -3的MV密度的大体积AlN晶体 。
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公开(公告)号：US20070243653A1
公开(公告)日：2007-10-18
申请号：US11731790
申请日：2007-03-30
申请人： Kenneth Morgan , Leo Schowalter , Glen Slack
发明人： Kenneth Morgan , Leo Schowalter , Glen Slack
IPC分类号： H01L21/00
CPC分类号： C04B35/581 , C01B21/0722 , C04B35/65 , C04B2235/3852 , C04B2235/3856 , C04B2235/3873 , C04B2235/402 , C04B2235/428 , C04B2235/46 , C04B2235/656 , C04B2235/72 , C04B2235/723 , C04B2235/79 , C30B23/00 , C30B29/403 , C30B33/02
摘要： Fabrication of doped and undoped stoichiometric polycrystalline AlN ceramics with high purity is accomplished by, for example, reacting Al pellets with nitrogen gas. Such polycrystalline AlN ceramics may be utilized in the fabrication of high purity AlN single crystals, which may be annealed to enhance a conductivity thereof.
摘要翻译： 通过例如使Al颗粒与氮气反应来实现具有高纯度的掺杂和未掺杂化学计量的多晶AlN陶瓷的制备。 这种多晶AlN陶瓷可以用于制造高纯度AlN单晶，其可以退火以增强其导电性。
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公开(公告)号：US20070016371A1
公开(公告)日：2007-01-18
申请号：US11180295
申请日：2005-07-13
申请人： James Waid , Kevin Dutton , Adam Boseley , Kenneth Morgan , Phil Hess , Michael Vaujin
发明人： James Waid , Kevin Dutton , Adam Boseley , Kenneth Morgan , Phil Hess , Michael Vaujin
IPC分类号： G01C21/00
摘要： A method for guiding the approach and landing of an aircraft is provided. The method involves receiving navigation information from the aircraft, receiving navigation information from an aircraft carrier, integrating the navigation information from the aircraft with the navigation information from the aircraft carrier to determine a relative velocity and a relative position between the aircraft and the aircraft carrier, and propagating the relative velocity and the relative position forward in time for navigation purposes.
摘要翻译： 提供了一种引导飞机接近和着陆的方法。 该方法包括从飞行器接收导航信息，从航空母舰接收导航信息，将来自飞行器的导航信息与来自航空母舰的导航信息相结合，以确定飞机与航空母舰之间的相对速度和相对位置， 并在时间上向前传播相对速度和相对位置用于导航目的。
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公开(公告)号：US06544743B1
公开(公告)日：2003-04-08
申请号：US09662386
申请日：2000-09-14
IPC分类号： C12Q168
CPC分类号： C07K14/705 , A61K38/00 , C12Q1/6883 , C12Q2600/156
摘要： The complete genomic structure of the peroxisome proliferator-activated receptor alpha gene is described. Also described are the identification of novel single nucleotide polymorphisms and association with higher plasma LDL-cholesterol and total and LDL-apolipoprotein B concentrations.
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公开(公告)号：US20070289946A1
公开(公告)日：2007-12-20
申请号：US11363816
申请日：2006-02-28
申请人： Leo Schowalter , Javier Lopez , Juan Rojo , Kenneth Morgan
发明人： Leo Schowalter , Javier Lopez , Juan Rojo , Kenneth Morgan
IPC分类号： C03C15/00 , H01L21/461 , H01L21/302
CPC分类号： H01L21/02024 , B24B37/0056 , B24B37/044 , B24B49/006 , H01L21/02052
摘要： According to one aspect of the invention, an improved process for preparing a surface of substrate is provided wherein the surface of the substrate is prepared for a chemical mechanical polishing (CMP) process, the CMP process is performed on the surface of the substrate, and the surface of the substrate is finished to clear the substrate surface of any active ingredients from the CMP process. Also, an improved substrate produced by the method is provided. According to one aspect of the invention, particular polishing materials and procedures may be used that allow for increased quality of AlN substrate surfaces.
摘要翻译： 根据本发明的一个方面，提供了一种用于制备衬底表面的改进方法，其中衬底的表面准备用于化学机械抛光（CMP）工艺，在衬底的表面上进行CMP工艺，以及 完成基材的表面以从CMP工艺中清除任何活性成分的基材表面。 此外，提供了通过该方法制备的改进的基板。 根据本发明的一个方面，可以使用允许增加AlN衬底表面质量的特定抛光材料和程序。
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10.发明申请Large aluminum nitride crystals with reduced defects and methods of making them 有权具有减少缺陷的大型氮化铝晶体和制造它们的方法公开(公告)号：US20070134827A1
公开(公告)日：2007-06-14
申请号：US11605192
申请日：2006-11-28
申请人： Robert Bondokov , Kenneth Morgan , Glen Slack , Leo Schowalter
发明人： Robert Bondokov , Kenneth Morgan , Glen Slack , Leo Schowalter
IPC分类号： H01L21/00
CPC分类号： C30B33/02 , B28D5/00 , C23C16/34 , C30B23/00 , C30B23/02 , C30B25/02 , C30B25/08 , C30B25/10 , C30B25/18 , C30B29/403 , H01L21/0201 , H01L21/02389 , H01L21/0254 , H01L21/30625 , Y10T428/21
摘要： Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm−2 and an inclusion density below 104 cm−3 and/or a MV density below 104 cm−3.
摘要翻译： 降低AlN中的微孔（MV）密度改善了与晶体生长期间的开裂有关的许多问题，抛光期间的蚀刻坑产生，AlN晶片中的光学透明度的降低以及可能的AlN的外延生长期间的生长凹坑形成和/ 或AlGaN。 这有助于实际的晶体生产策略和形成具有低缺陷密度的大的大块AlN晶体 - 例如位错密度低于10 -4 cm -2，并且包含密度低于 而且，或者低于10 -4 cm -3的MV密度。
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