公开(公告)号：US07884454B2

公开(公告)日：2011-02-08

申请号：US12209106

申请日：2008-09-11

申请人： Jun Lu ,  Anup Bhalla ,  Xiaobin Wang ,  Allen Chang ,  Man Sheng Hu ,  Xiaotian Zhang

发明人： Jun Lu ,  Anup Bhalla ,  Xiaobin Wang ,  Allen Chang ,  Man Sheng Hu ,  Xiaotian Zhang

IPC分类号： H01L23/495

CPC分类号： H01L21/823487 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49531 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/58 ,  H01L24/37 ,  H01L24/39 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L24/91 ,  H01L25/071 ,  H01L25/074 ,  H01L25/18 ,  H01L27/088 ,  H01L2224/05552 ,  H01L2224/0603 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49112 ,  H01L2224/4917 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H02J7/0031 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A semiconductor package assembly may include a lead frame having a die bonding pad and plurality of leads coupled to the first die bonding pad. A vertical semiconductor device may be bonded to the die bonding pad. The device may have a conductive pad electrically connected to one lead through a first bond wire. An electrically isolated conductive trace may be formed from a layer of conductive material of the first semiconductor device. The conductive trace provides an electrically conductive path between the first bond wire and a second bond wire. The conductive path may either pass underneath a third bond wire thereby avoiding the third bond wire crossing another bond wire, or the conductive path may result in a reduced length for the first and second bond wires that is less than a predetermined maximum length.

公开(公告)号：US08049315B2

公开(公告)日：2011-11-01

申请号：US13007279

申请日：2011-01-14

申请人： Jun Lu ,  Anup Bhalla ,  Xiaobin Wang ,  Allen Chang ,  Kenny Man Sheng Hu ,  Xiaotian Zhang

发明人： Jun Lu ,  Anup Bhalla ,  Xiaobin Wang ,  Allen Chang ,  Kenny Man Sheng Hu ,  Xiaotian Zhang

IPC分类号： H01L23/495

CPC分类号： H01L21/823487 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49531 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/58 ,  H01L24/37 ,  H01L24/39 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L24/91 ,  H01L25/071 ,  H01L25/074 ,  H01L25/18 ,  H01L27/088 ,  H01L2224/05552 ,  H01L2224/0603 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49112 ,  H01L2224/4917 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H02J7/0031 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A semiconductor package assembly may include a lead frame having a die bonding pad and plurality of leads coupled to the first die bonding pad. A vertical semiconductor device may be bonded to the die bonding pad. The device may have a conductive pad electrically connected to one lead through a first bond wire. An electrically isolated conductive trace may be formed from a layer of conductive material of the first semiconductor device. The conductive trace provides an electrically conductive path between the first bond wire and a second bond wire. The conductive path may either pass underneath a third bond wire thereby avoiding the third bond wire crossing another bond wire, or the conductive path may result in a reduced length for the first and second bond wires that is less than a predetermined maximum length.

摘要翻译： 半导体封装组件可以包括引线框架，其具有管芯接合焊盘和耦合到第一管芯接合焊盘的多个引线。 垂直半导体器件可以结合到芯片焊盘。 该器件可以具有通过第一接合线电连接到一个引线的导电焊盘。 电绝缘的导电迹线可以由第一半导体器件的导电材料层形成。 导电迹线在第一接合线和第二接合线之间提供导电路径。 导电路径可以通过第三接合线下方，从而避免第三接合线穿过另一接合线，或者导电路径可导致第一和第二接合线的长度小于预定最大长度。

公开(公告)号：US20110108998A1

公开(公告)日：2011-05-12

申请号：US13007279

申请日：2011-01-14

申请人： Jun Lu ,  Anup Bhalla ,  Xiaobin Wang ,  Allen Chang ,  Man Sheng Hu ,  Xiaotian Zhang

发明人： Jun Lu ,  Anup Bhalla ,  Xiaobin Wang ,  Allen Chang ,  Man Sheng Hu ,  Xiaotian Zhang

IPC分类号： H01L23/52

CPC分类号： H01L21/823487 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49531 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/58 ,  H01L24/37 ,  H01L24/39 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L24/91 ,  H01L25/071 ,  H01L25/074 ,  H01L25/18 ,  H01L27/088 ,  H01L2224/05552 ,  H01L2224/0603 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49112 ,  H01L2224/4917 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H02J7/0031 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A semiconductor package assembly may include a lead frame having a die bonding pad and plurality of leads coupled to the first die bonding pad. A vertical semiconductor device may be bonded to the die bonding pad. The device may have a conductive pad electrically connected to one lead through a first bond wire. An electrically isolated conductive trace may be formed from a layer of conductive material of the first semiconductor device. The conductive trace provides an electrically conductive path between the first bond wire and a second bond wire. The conductive path may either pass underneath a third bond wire thereby avoiding the third bond wire crossing another bond wire, or the conductive path may result in a reduced length for the first and second bond wires that is less than a predetermined maximum length.

摘要翻译： 半导体封装组件可以包括引线框架，其具有管芯接合焊盘和耦合到第一管芯接合焊盘的多个引线。 垂直半导体器件可以结合到芯片焊盘。 该器件可以具有通过第一接合线电连接到一个引线的导电焊盘。 电绝缘的导电迹线可以由第一半导体器件的导电材料层形成。 导电迹线在第一接合线和第二接合线之间提供导电路径。 导电路径可以通过第三接合线下方，从而避免第三接合线穿过另一接合线，或者导电路径可导致第一和第二接合线的长度小于预定最大长度。

公开(公告)号：US20090008758A1

公开(公告)日：2009-01-08

申请号：US12209106

申请日：2008-09-11

申请人： Jun Lu ,  Anup Bhalla ,  Xiaobin Wang ,  Allen Chang ,  Man Sheng Hu ,  Xiaotian Zhang

发明人： Jun Lu ,  Anup Bhalla ,  Xiaobin Wang ,  Allen Chang ,  Man Sheng Hu ,  Xiaotian Zhang

IPC分类号： H01L23/495 ,  H01L21/58 ,  H01L23/488

CPC分类号： H01L21/823487 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49531 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/58 ,  H01L24/37 ,  H01L24/39 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L24/91 ,  H01L25/071 ,  H01L25/074 ,  H01L25/18 ,  H01L27/088 ,  H01L2224/05552 ,  H01L2224/0603 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49112 ,  H01L2224/4917 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H02J7/0031 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A semiconductor package assembly may include a lead frame having a die bonding pad and plurality of leads coupled to the first die bonding pad. A vertical semiconductor device may be bonded to the die bonding pad. The device may have a conductive pad electrically connected to one lead through a first bond wire. An electrically isolated conductive trace may be formed from a layer of conductive material of the first semiconductor device. The conductive trace provides an electrically conductive path between the first bond wire and a second bond wire. The conductive path may either pass underneath a third bond wire thereby avoiding the third bond wire crossing another bond wire, or the conductive path may result in a reduced length for the first and second bond wires that is less than a predetermined maximum length.

摘要翻译： 半导体封装组件可以包括引线框架，其具有管芯接合焊盘和耦合到第一管芯接合焊盘的多个引线。 垂直半导体器件可以结合到芯片焊盘。 该器件可以具有通过第一接合线电连接到一个引线的导电焊盘。 电绝缘的导电迹线可以由第一半导体器件的导电材料层形成。 导电迹线在第一接合线和第二接合线之间提供导电路径。 导电路径可以通过第三接合线下方，从而避免第三接合线穿过另一接合线，或者导电路径可导致第一和第二接合线的长度小于预定最大长度。

公开(公告)号：US08344519B2

公开(公告)日：2013-01-01

申请号：US13089065

申请日：2011-04-18

申请人： Jun Lu ,  Allen Chang ,  Xiaotian Zhang

发明人： Jun Lu ,  Allen Chang ,  Xiaotian Zhang

IPC分类号： H01L23/48

CPC分类号： H01L21/823487 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49531 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/58 ,  H01L24/37 ,  H01L24/39 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L24/91 ,  H01L25/071 ,  H01L25/074 ,  H01L25/18 ,  H01L27/088 ,  H01L2224/05552 ,  H01L2224/0603 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49112 ,  H01L2224/4917 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H02J7/0031 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A battery protection package assembly is disclosed. The assembly includes a power control integrated circuit (IC) with pins for a supply voltage input (VCC) and a ground (VSS) on a first side of the power control IC. First and second common-drain metal oxide semiconductor field effect transistors (MOSFETs) are electrically coupled to the power control IC. The power control IC and the first and second common-drain metal oxide semiconductor field effect transistors (MOSFET) are co-packaged on a common die pad. The power control IC is vertically stacked on top of one or more of the first and second common-drain MOSFETs. Leads coupled to a supply voltage input (VCC) and a ground (VSS) of the power control IC are on a first side of the common die pad.

摘要翻译： 公开了一种电池保护封装组件。 该组件包括功率控制集成电路（IC），其具有用于功率控制IC的第一侧上的电源电压输入（VCC）和接地（VSS）的引脚。 第一和第二共漏极金属氧化物半导体场效应晶体管（MOSFET）电耦合到功率控制IC。 功率控制IC和第一和第二共漏极金属氧化物半导体场效应晶体管（MOSFET）共同封装在公共管芯焊盘上。 功率控制IC垂直堆叠在第一和第二共漏极MOSFET中的一个或多个的顶部上。 耦合到功率控制IC的电源电压输入（VCC）和接地（VSS）的引线位于公共管芯焊盘的第一侧上。

公开(公告)号：US07898092B2

公开(公告)日：2011-03-01

申请号：US11944313

申请日：2007-11-21

申请人： Jun Lu ,  Allen Chang ,  Xiaotian Zhang

发明人： Jun Lu ,  Allen Chang ,  Xiaotian Zhang

IPC分类号： H02H9/00

CPC分类号： H02J7/0031 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/58 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/91 ,  H01L25/071 ,  H01L25/074 ,  H01L25/18 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2225/06562 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A stacked-die package for battery protection is disclosed. The battery protection package includes a power control integrated circuit (IC) stacked on top of integrated dual common-drain metal oxide semiconductor field effect transistors (MOSFETs) or two discrete MOSFETs. The power control IC is either stacked on top of one MOSFET or on top of and overlapping both two MOSFETs.

摘要翻译： 公开了一种用于电池保护的堆叠式封装。 电池保护封装包括堆叠在集成的双共漏极金属氧化物半导体场效应晶体管（MOSFET）或两个分立MOSFET之上的功率控制集成电路（IC）。 功率控制IC或者堆叠在一个MOSFET的顶部，或者两个MOSFET的顶部和两个MOSFET重叠。

公开(公告)号：US20110278709A1

公开(公告)日：2011-11-17

申请号：US13089065

申请日：2011-04-18

申请人： Jun Lu ,  Allen Chang ,  Xiaotian Zhang

发明人： Jun Lu ,  Allen Chang ,  Xiaotian Zhang

IPC分类号： H01L23/495

CPC分类号： H01L21/823487 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49531 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/58 ,  H01L24/37 ,  H01L24/39 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L24/91 ,  H01L25/071 ,  H01L25/074 ,  H01L25/18 ,  H01L27/088 ,  H01L2224/05552 ,  H01L2224/0603 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49112 ,  H01L2224/4917 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H02J7/0031 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A battery protection package assembly is disclosed. The assembly includes a power control integrated circuit (IC) with pins for a supply voltage input (VCC) and a ground (VSS) on a first side of the power control IC. First and second common-drain metal oxide semiconductor field effect transistors (MOSFETs) are electrically coupled to the power control IC. The power control IC and the first and second common-drain metal oxide semiconductor field effect transistors (MOSFET) are co-packaged on a common die pad. The power control IC is vertically stacked on top of one or more of the first and second common-drain MOSFETs. Leads coupled to a supply voltage input (VCC) and a ground (VSS) of the power control IC are on a first side of the common die pad.

摘要翻译： 公开了一种电池保护封装组件。 该组件包括功率控制集成电路（IC），其具有用于功率控制IC的第一侧上的电源电压输入（VCC）和接地（VSS）的引脚。 第一和第二共漏极金属氧化物半导体场效应晶体管（MOSFET）电耦合到功率控制IC。 功率控制IC和第一和第二共漏极金属氧化物半导体场效应晶体管（MOSFET）共同封装在公共管芯焊盘上。 功率控制IC垂直堆叠在第一和第二共漏极MOSFET中的一个或多个的顶部上。 耦合到功率控制IC的电源电压输入（VCC）和接地（VSS）的引线位于公共管芯焊盘的第一侧上。

公开(公告)号：US20090128968A1

公开(公告)日：2009-05-21

申请号：US11944313

申请日：2007-11-21

申请人： Jun Lu ,  Allen Chang ,  Xiaotian Zhang

发明人： Jun Lu ,  Allen Chang ,  Xiaotian Zhang

IPC分类号： H02H9/00

CPC分类号： H02J7/0031 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/58 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/91 ,  H01L25/071 ,  H01L25/074 ,  H01L25/18 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2225/06562 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A stacked-die package for battery protection is disclosed. The battery protection package includes a power control integrated circuit (IC) stacked on top of integrated dual common-drain metal oxide semiconductor field effect transistors (MOSFETs) or two discrete MOSFETs. The power control IC is either stacked on top of one MOSFET or on top of and overlapping both two MOSFETs.

摘要翻译： 公开了一种用于电池保护的堆叠式封装。 电池保护封装包括堆叠在集成的双共漏极金属氧化物半导体场效应晶体管（MOSFET）或两个分立MOSFET之上的功率控制集成电路（IC）。 功率控制IC或者堆叠在一个MOSFET的顶部，或两个MOSFET的顶部和两个MOSFET重叠。

公开(公告)号：US08643160B2

公开(公告)日：2014-02-04

申请号：US13531205

申请日：2012-06-22

申请人： Allen Chang ,  Wai-Keung Peter Cheng

发明人： Allen Chang ,  Wai-Keung Peter Cheng

IPC分类号： H01L23/495 ,  H01L23/48 ,  G05F1/00

CPC分类号： H01L25/16 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/13091 ,  H02M3/155 ,  H02M7/003 ,  H01L2924/00

摘要： A high voltage and high power boost converter is disclosed. The boost converter includes a boost converter IC and a discrete Schottky diode, both of which are co-packaged on a standard single common die pad. The bottom cathode is electrically connected to the common die pad. It is emphasized that this abstract is being provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. This abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

摘要翻译： 公开了一种高压和高功率升压转换器。 升压转换器包括升压转换器IC和离散肖特基二极管，它们都被共同封装在标准的单个公共管芯焊盘上。 底部阴极电连接到公共管芯焊盘。 要强调的是，这个摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。 提交本摘要的理解是，它不会用于解释或限制权利要求的范围或含义。

公开(公告)号：US08631434B2

公开(公告)日：2014-01-14

申请号：US13611865

申请日：2012-09-12

申请人： Henry C. Yuen ,  Daniel S. Kwoh ,  Allen Chang

发明人： Henry C. Yuen ,  Daniel S. Kwoh ,  Allen Chang

IPC分类号： H04N7/173

CPC分类号： H04N5/50 ,  H04N5/4401 ,  H04N5/44543 ,  H04N5/45 ,  H04N7/088 ,  H04N7/0884 ,  H04N7/0887 ,  H04N7/10 ,  H04N7/165 ,  H04N21/42204 ,  H04N21/4316 ,  H04N21/4345 ,  H04N21/435 ,  H04N21/4383 ,  H04N21/4524 ,  H04N21/4622 ,  H04N21/47 ,  H04N21/482 ,  H04N21/4823 ,  H04N21/6547 ,  H04N21/84

摘要： Multiple channel maps are embedded in a television transmission and the appropriate channel corresponding to the particular television service used by the viewer is downloaded for use with the television receiver. Each channel map is accompanied by a channel map identifier which identifies the source of the television transmission and a geographic identifier. The source of a television transmission is automatically detected by monitoring the radio-frequency spectrum allocations of telecast stations. The geographic area identifier is determined by comparison with a user inputted geographic area identifier. The channel map having a channel map identifier corresponding to the detected television transmission source and the user inputted geographic area identifier is downloaded and stored for future use.

摘要翻译： 多频道地图被嵌入在电视传输中，并且与观看者使用的特定电视服务对应的适当频道被下载以与电视接收机一起使用。 每个频道地图伴随着标识电视传输源和地理标识符的频道映射标识符。 通过监视电视台的射频频谱分配，自动检测电视传输的来源。 通过与用户输入的地理区域标识符进行比较来确定地理区域标识符。 具有与检测到的电视传输源和用户输入的地理区域标识符相对应的频道映射标识符的频道映射被下载并存储以备将来使用。