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    Optical semiconductor device and method for fabricating the same
    2.
    发明申请
    Optical semiconductor device and method for fabricating the same 失效
    光半导体装置及其制造方法

    公开(公告)号：US20060131557A1

    公开(公告)日：2006-06-22

    申请号：US11304816

    申请日：2005-12-16

    申请人： Jun Shimizu ,  Tetsuzo Ueda ,  Toshikazu Onishi

    发明人： Jun Shimizu ,  Tetsuzo Ueda ,  Toshikazu Onishi

    IPC分类号： H01L31/109

    CPC分类号： B82Y20/00 ,  H01S5/18311 ,  H01S5/3406 ,  H01S5/3407 ,  H01S5/34313 ,  H01S5/34373 ,  H01S2301/176

    摘要： An optical semiconductor device includes an active layer having a quantum well structure including alternately stacked well layers and barrier layers with a larger band gap than the well layers. The band gap of each of the well layers and the barrier layers is constant, each well layer is uniformly provided with compression strain and each barrier layer is provided with large extension strain in a center portion thereof along the thickness direction and small extension strain in portions thereof in the vicinity of the well layers.

    摘要翻译： 光学半导体器件包括具有量子阱结构的有源层，其包括具有比阱层更大的带隙的交替堆叠的阱层和势垒层。 每个阱层和阻挡层的带隙是恒定的，每个阱层均匀地具有压缩应变，并且每个阻挡层在其中心部分沿着厚度方向具有大的延伸应变，并且部分地具有小的延伸应变 在阱层附近。

    Semiconductor light emitting device
    3.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号：US07538357B2

    公开(公告)日：2009-05-26

    申请号：US11195639

    申请日：2005-08-03

    申请人： Toshikazu Onishi ,  Tatsuya Tanigawa ,  Tetsuzo Ueda

    发明人： Toshikazu Onishi ,  Tatsuya Tanigawa ,  Tetsuzo Ueda

    IPC分类号： H01L29/207

    CPC分类号： H01S5/18394 ,  H01L33/105 ,  H01L33/465 ,  H01L33/54 ,  H01S5/06226 ,  H01S5/18311 ,  H01S5/18319 ,  H01S5/18355 ,  H01S5/18358 ,  H01S5/18386

    摘要： A semiconductor light emitting device includes: a cavity including a mesa formed over a substrate, the mesa having an active layer and being isolated by a recess formed around the mesa; and a resin layer with which the recess is filled. On the upper surface of the cavity, which is a light output surface through which light emitted from the active layer is output, a metal film having an opening whose diameter is smaller than the emission wavelength of the emitted light is formed.

    摘要翻译： 一种半导体发光器件包括：包括形成在衬底上的台面的空腔，所述台面具有有源层，并且通过围绕所述台面形成的凹部隔离; 以及填充有凹部的树脂层。 在作为输出从有源层发射的光的光输出面的空腔的上表面形成具有直径小于发射光的发射波长的开口的金属膜。

    Semiconductor laser device
    6.
    发明申请
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US20060245459A1

    公开(公告)日：2006-11-02

    申请号：US11410048

    申请日：2006-04-25

    申请人： Toshikazu Onishi ,  Kazutoshi Onozawa ,  Tetsuzo Ueda

    发明人： Toshikazu Onishi ,  Kazutoshi Onozawa ,  Tetsuzo Ueda

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18358 ,  B82Y20/00 ,  H01S5/18311 ,  H01S5/2009 ,  H01S5/3211 ,  H01S5/34313 ,  H01S2301/176

    摘要： A semiconductor laser device includes: an active layer formed on a substrate and including an AlGaAs layer; and an upper spacer layer formed at least one of above and below the active layer and including AlaGabIn1-a-bP (where 0≦a≦1, 0≦b≦1, and 0≦a+b≦1). The upper spacer layer has a composition enough to serve as a barrier layer against electrons injected into the active layer.

    摘要翻译： 半导体激光器件包括：形成在衬底上并包括AlGaAs层的有源层; 以及形成在有源层的上方和下方中的至少一个并且包括Al-1-ab P（其中第一个和第二个）的上隔离层 0 <= a <= 1，0 <= b <= 1，0 <= a + b <= 1）。 上间隔层具有足以用作抵抗注入有源层的电子的阻挡层的组成。

    Semiconductor light emitting element and method for fabricating the same
    7.
    发明申请
    Semiconductor light emitting element and method for fabricating the same 审中-公开
    半导体发光元件及其制造方法

    公开(公告)号：US20060056473A1

    公开(公告)日：2006-03-16

    申请号：US11195625

    申请日：2005-08-03

    申请人： Tatsuya Tanigawa ,  Toshikazu Onishi ,  Tetsuzo Ueda

    发明人： Tatsuya Tanigawa ,  Toshikazu Onishi ,  Tetsuzo Ueda

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18347 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/2063 ,  H01S2301/166 ,  H01S2301/176

    摘要： A surface emitting laser element includes a mesa structure of a semiconductor multilayer film formed to have a convex cross section. A first insulating film of an inorganic material is formed on a side surface of the mesa structure, and on the first insulating film, a resin layer is formed to fill a space surrounding the mesa structure. A second insulating film of an inorganic material is formed on the resin layer, and an upper contact electrode with an electrode opening exposing part of the top surface of the mesa structure is formed on the second insulating film and the mesa structure. With this construction, oxidation and alteration of the resin layer during fabrication of the element can be suppressed to bury the mesa structure with no gap created. Therefore, a semiconductor light-emitting element with high reliability can be provided.

    摘要翻译： 表面发射激光元件包括形成为具有凸形横截面的半导体多层膜的台面结构。 无机材料的第一绝缘膜形成在台面结构的侧面上，在第一绝缘膜上形成树脂层以填充台面结构周围的空间。 在树脂层上形成无机材料的第二绝缘膜，在第二绝缘膜和台面结构上形成具有露出台面结构的顶面部分的电极开口的上接触电极。 利用这种结构，可以抑制元件制造过程中的树脂层的氧化和改变，以便不产生间隙而埋入台面结构。 因此，可以提供高可靠性的半导体发光元件。

    Semiconductor laser device
    9.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US07391798B2

    公开(公告)日：2008-06-24

    申请号：US11410048

    申请日：2006-04-25

    申请人： Toshikazu Onishi ,  Kazutoshi Onozawa ,  Tetsuzo Ueda

    发明人： Toshikazu Onishi ,  Kazutoshi Onozawa ,  Tetsuzo Ueda

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18358 ,  B82Y20/00 ,  H01S5/18311 ,  H01S5/2009 ,  H01S5/3211 ,  H01S5/34313 ,  H01S2301/176

    摘要： A semiconductor laser device includes: an active layer formed on a substrate and including an AlGaAs layer; and an upper spacer layer formed at least one of above and below the active layer and including AlaGabIn1-a-bP (where 0≦a≦1, 0≦b≦1, and 0≦a+b≦1). The upper spacer layer has a composition enough to serve as a barrier layer against electrons injected into the active layer.

    摘要翻译： 半导体激光器件包括：形成在衬底上并包括AlGaAs层的有源层; 以及形成在有源层的上方和下方中的至少一个并且包括Al-1-ab P（其中第一个和第二个）的上隔离层 0 <= a <= 1，0 <= b <= 1，0 <= a + b <= 1）。 上间隔层具有足以用作抵抗注入有源层的电子的阻挡层的组成。