公开(公告)号：US08409328B2

公开(公告)日：2013-04-02

申请号：US12726598

申请日：2010-03-18

申请人： Jun Yamawaku ,  Junji Oikawa ,  Hiroyuki Nakayama

发明人： Jun Yamawaku ,  Junji Oikawa ,  Hiroyuki Nakayama

IPC分类号： B03C3/016

CPC分类号： H01L21/67781 ,  H01L21/67017

摘要： A substrate transfer device includes an atmosphere introduction unit and an atmosphere exhaust unit provided at a top and a bottom portion of a main body of the device, respectively; and a substrate transfer mechanism provided between the atmosphere introduction unit and the atmosphere exhaust unit. The substrate transfer device further includes a downward flow forming unit provided, adjacent to the atmosphere introduction unit, to allow an atmosphere to be introduced through the atmosphere introduction unit and to downwardly flow through the substrate transfer mechanism and be exhausted through the atmosphere exhaust unit; and a gas ionizing unit for ionizing the atmosphere and a particle collecting unit for collecting particles included in the atmosphere, the gas ionizing unit and the particle collecting unit being sequentially provided in the direction in which the atmosphere downwardly flows, between the downward flow forming unit and the substrate transfer mechanism.

摘要翻译： 基板转印装置包括分别设置在装置的主体的顶部和底部的气氛引入单元和气体排出单元; 以及设置在大气引入单元和大气排气单元之间的基板输送机构。 基板转印装置还包括与大气引入单元相邻设置的向下流动形成单元，以允许气氛通过大气引入单元引入并向下流过基板传送机构并通过大气排气单元排出; 和用于使气氛离子化的气体离子化单元和用于收集包含在大气中的颗粒的颗粒收集单元，气体离子化单元和颗粒收集单元沿着大气向下流动的方向依次设置在下流形成单元 和基板转印机构。

公开(公告)号：US08398745B2

公开(公告)日：2013-03-19

申请号：US12726612

申请日：2010-03-18

申请人： Jun Yamawaku ,  Junji Oikawa ,  Hiroyuki Nakayama

发明人： Jun Yamawaku ,  Junji Oikawa ,  Hiroyuki Nakayama

IPC分类号： B03C3/019 ,  B03C3/36

CPC分类号： H01L21/67017

摘要： A substrate processing apparatus includes a processing chamber for accommodating therein a processing target substrate; a gas exhaust path through which a gas inside the processing chamber is exhausted; one or more exhaust pumps provided in the gas exhaust path; and a scrubber for collecting harmful components from an exhaust gas. The apparatus further includes an ionized gas supply unit for supplying to the gas exhaust path an ionized gas for neutralizing charged particles included in the exhaust gas flowing therethrough.

摘要翻译： 基板处理装置包括：处理室，用于在其中容纳加工对象基板; 气体排出通道，处理室内的气体通过该排气路径排出; 设置在排气通道中的一个或多个排气泵; 以及用于从废气中收集有害成分的洗涤器。 该装置还包括电离气体供应单元，用于向气体排出通道供应用于中和包含在流过其中的废气中的带电粒子的电离气体。

公开(公告)号：US20100236405A1

公开(公告)日：2010-09-23

申请号：US12726598

申请日：2010-03-18

申请人： Jun Yamawaku ,  Junji Oikawa ,  Hiroyuki Nakayama

发明人： Jun Yamawaku ,  Junji Oikawa ,  Hiroyuki Nakayama

IPC分类号： B03C3/00 ,  B01J19/08 ,  B03C3/45

CPC分类号： H01L21/67781 ,  H01L21/67017

摘要： A substrate transfer device includes an atmosphere introduction unit and an atmosphere exhaust unit provided at a top and a bottom portion of a main body of the device, respectively; and a substrate transfer mechanism provided between the atmosphere introduction unit and the atmosphere exhaust unit. The substrate transfer device further includes a downward flow forming unit provided, adjacent to the atmosphere introduction unit, to allow an atmosphere to be introduced through the atmosphere introduction unit and to downwardly flow through the substrate transfer mechanism and be exhausted through the atmosphere exhaust unit; and a gas ionizing unit for ionizing the atmosphere and a particle collecting unit for collecting particles included in the atmosphere, the gas ionizing unit and the particle collecting unit being sequentially provided in the direction in which the atmosphere downwardly flows, between the downward flow forming unit and the substrate transfer mechanism.

摘要翻译： 基板转印装置包括分别设置在装置的主体的顶部和底部的气氛引入单元和气体排出单元; 以及设置在大气引入单元和大气排气单元之间的基板输送机构。 基板转印装置还包括与大气引入单元相邻设置的向下流动形成单元，以允许气氛通过大气引入单元引入并向下流过基板传送机构并通过大气排气单元排出; 和用于使气氛离子化的气体离子化单元和用于收集包含在大气中的颗粒的颗粒收集单元，气体离子化单元和颗粒收集单元沿着大气向下流动的方向依次设置在下流形成单元 和基板转印机构。

公开(公告)号：US20100236406A1

公开(公告)日：2010-09-23

申请号：US12726612

申请日：2010-03-18

申请人： Jun Yamawaku ,  Junji Oikawa ,  Hiroyuki Nakayama

发明人： Jun Yamawaku ,  Junji Oikawa ,  Hiroyuki Nakayama

IPC分类号： B03C3/01 ,  B03C3/38

CPC分类号： H01L21/67017

摘要： A substrate processing apparatus includes a processing chamber for accommodating therein a processing target substrate; a gas exhaust path through which a gas inside the processing chamber is exhausted; one or more exhaust pumps provided in the gas exhaust path; and a scrubber for collecting harmful components from an exhaust gas. The apparatus further includes an ionized gas supply unit for supplying to the gas exhaust path an ionized gas for neutralizing charged particles included in the exhaust gas flowing therethrough.

摘要翻译： 基板处理装置包括：处理室，用于在其中容纳加工对象基板; 气体排出通道，处理室内的气体通过该排气路径排出; 设置在排气通道中的一个或多个排气泵; 以及用于从废气中收集有害成分的洗涤器。 该装置还包括电离气体供应单元，用于向气体排出通道供应用于中和包含在流过其中的废气中的带电粒子的电离气体。

公开(公告)号：US09385015B2

公开(公告)日：2016-07-05

申请号：US12700771

申请日：2010-02-05

申请人： Jun Yamawaku ,  Junji Oikawa ,  Hiroyuki Nakayama

发明人： Jun Yamawaku ,  Junji Oikawa ,  Hiroyuki Nakayama

IPC分类号： H01L21/677 ,  H01L21/67

CPC分类号： H01L21/67184 ,  H01L21/67069 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67213 ,  H01L21/67742 ,  H01L21/6831

摘要： A transfer chamber is provided between a processing unit for performing a predetermined process on a target substrate to be processed in a depressurized environment and an atmospheric maintaining unit for maintaining the target substrate in an atmospheric environment to transfer the target substrate therebetween. The transfer chamber includes a chamber main body for accommodating the target substrate, a gas exhaust unit for exhausting the chamber main body to set the chamber main body to the depressurized environment, and a gas supply unit for supplying a predetermined gas to the chamber main body to set the chamber main body in the atmospheric environment. Further, in the transfer chamber, an ionization unit is provided outside the chamber main body, for ionizing the predetermined gas and an ionized gas supply unit is provided to supply the ionized gas generated by the ionization unit to the chamber main body.

摘要翻译： 传送室设置在用于在减压环境中对要处理的目标基板进行预定处理的处理单元和用于将目标基板保持在大气环境中以在其间传送目标基板的大气保持单元。 传送室包括用于容纳目标基板的室主体，用于排出室主体以将室主体设置到减压环境的排气单元，以及用于将预定气体供应到室主体的气体供应单元 将室主体设置在大气环境中。 此外，在传送室中，离子化单元设置在室主体的外部，用于电离所述预定气体，并且提供电离气体供应单元以将由离子化单元产生的电离气体供应到室主体。

公开(公告)号：US09349618B2

公开(公告)日：2016-05-24

申请号：US13344267

申请日：2012-01-05

申请人： Jun Yamawaku ,  Chishio Koshimizu

发明人： Jun Yamawaku ,  Chishio Koshimizu

IPC分类号： H01L21/3065 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687

CPC分类号： H01L21/67069 ,  H01J37/32477 ,  H01J37/32559 ,  H01J37/32642 ,  H01L21/68735

摘要： A substrate processing apparatus capable of removing deposits attached on a component of a lower temperature in a gap between two components, temperatures of which are greatly different from each other, without degrading a working ratio of the substrate processing apparatus. In the substrate processing apparatus, a chamber receives a wafer, a focus ring surrounds the wafer disposed in the chamber, a side surface protective member transmits a laser beam, a laser beam irradiating apparatus irradiates the laser beam to the side surface protective member, an inner focus ring of the focus ring is disposed adjacent to the wafer and is cooled down and an outer focus ring surrounds the inner focus ring and is not cooled down in a focus ring, and a facing surface of the side surface protective member faces a gap between the inner focus ring and the outer focus ring.

摘要翻译： 一种基板处理装置，其能够在不降低基板处理装置的加工率的情况下，除去附着在两个部件之间的间隙中的两个部件之间的间隙附近的沉积物，温度彼此大不相同。 在基板处理装置中，室接收晶片，聚焦环围绕设置在室中的晶片，侧面保护构件透射激光束，激光束照射装置将激光束照射到侧面保护构件， 聚焦环的内聚焦环与晶片相邻地设置并被冷却，并且外聚焦环围绕内聚焦环，并且在聚焦环中不被冷却，并且侧表面保护构件的面对表面 在内聚焦环和外聚焦环之间。

公开(公告)号：US08825434B2

公开(公告)日：2014-09-02

申请号：US13248538

申请日：2011-09-29

申请人： Chishio Koshimizu ,  Jun Yamawaku ,  Tatsuo Matsudo

发明人： Chishio Koshimizu ,  Jun Yamawaku ,  Tatsuo Matsudo

IPC分类号： G01K11/00 ,  G01K11/12 ,  G01B11/06 ,  G01B9/02

CPC分类号： G01K11/125 ,  G01B9/02021 ,  G01B9/02025 ,  G01B9/0209 ,  G01B11/0675

摘要： A temperature measuring method includes: transmitting a light to a measurement point of an object to be measured, the object being a substrate on which a thin film is formed; measuring a first interference wave caused by a reflected light from a surface of the substrate, and a second interference wave caused by reflected lights from an interface between the substrate and the thin film and from a rear surface of the thin film; calculating an optical path length from the first interference wave to the second interference wave; calculating a film thickness of the thin film; calculating an optical path difference between an optical path length of the substrate and the calculated optical path length; compensating for the optical path length from the first interference wave to the second interference wave; and calculating a temperature of the object at the measurement point.

摘要翻译： 温度测量方法包括：将光传输到待测物体的测量点，所述物体是其上形成有薄膜的基板; 测量由来自基板的表面的反射光引起的第一干涉波，以及由来自基板和薄膜之间的界面和薄膜的后表面的反射光引起的第二干涉波; 计算从第一干涉波到第二干涉波的光路长度; 计算薄膜的膜厚度; 计算基板的光路长度与算出的光程长度之间的光程差; 补偿从第一干涉波到第二干涉波的光路长度; 并计算测量点处的物体的温度。

公开(公告)号：US08257498B2

公开(公告)日：2012-09-04

申请号：US12180028

申请日：2008-07-25

申请人： Jun Yamawaku ,  Tsuyoshi Moriya

发明人： Jun Yamawaku ,  Tsuyoshi Moriya

IPC分类号： H01L21/67

CPC分类号： H01L21/67766 ,  H01L21/67778 ,  H01L21/67781

摘要： A substrate transfer module that can prevent corrosion of components, adhesion of particles to the substrate, and increases in the manufacturing cost and the size of the substrate transfer module. A substrate transfer module is connected to a substrate processing module. The substrate processing module implements desired processing on a substrate. A substrate transfer device transfers a substrate and includes a holding unit and a moving unit. The holding unit holds the substrate, and the moving unit moves the holding unit. A transfer chamber houses the substrate transfer device in an interior thereof that is isolated from an external atmosphere. An isolation device isolates at least the holding unit and the substrate held by the holding unit from an interior atmosphere of the transfer chamber.

摘要翻译： 可以防止组分腐蚀，颗粒粘附到基底上的衬底转移模块，以及衬底转移模块的制造成本和尺寸的增加。 衬底转移模块连接到衬底处理模块。 衬底处理模块在衬底上实现所需的处理。 衬底传送装置传送衬底并且包括保持单元和移动单元。 保持单元保持基板，移动单元移动保持单元。 传送室在其内部容纳与外部气氛隔离的衬底传送装置。 隔离装置至少将保持单元和由保持单元保持的基板与传送室的内部空气隔离。

公开(公告)号：US20110211817A1

公开(公告)日：2011-09-01

申请号：US13034858

申请日：2011-02-25

申请人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo

发明人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo

IPC分类号： F27D11/12 ,  H01L21/00

CPC分类号： H01L21/67115 ,  F27B17/0025 ,  F27D11/12

摘要： There is provided a method for heating a part within a processing chamber of a semiconductor manufacturing apparatus having a substrate in the processing chamber and performing a process on the substrate. The heating method includes generating heating lights which is generated by a heating light source provided outside the processing chamber and has a wavelength band capable of passing through a first part in the processing chamber and being absorbed into a second part in the processing chamber made of a material different from that of the first part, and heating the second part in the processing chamber by passing the heating lights through the first part in the processing chamber and irradiating the heating lights to the second part in the processing chamber.

摘要翻译： 提供了一种用于加热在处理室中具有基板的半导体制造装置的处理室内的部件并在基板上进行处理的方法。 该加热方法包括产生由设置在处理室外部的加热光源产生的加热灯，并且具有能够通过处理室中的第一部分并被吸收到处理室中的第二部分中的波长带 与第一部分不同的材料，并且通过使加热灯通过处理室中的第一部分并且将加热灯照射到处理室中的第二部分来加热处理室中的第二部分。

公开(公告)号：US08845853B2

公开(公告)日：2014-09-30

申请号：US12042661

申请日：2008-03-05

申请人： Jun Yamawaku ,  Tsuyoshi Moriya

发明人： Jun Yamawaku ,  Tsuyoshi Moriya

IPC分类号： C23C16/50 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC分类号： H01L21/6831 ,  H01J37/3244 ,  H01J37/32642 ,  H01L21/67069 ,  H01L21/67109

摘要： A substrate processing apparatus that can improve the uniformity of plasma processing carried out on a wafer. The wafer is housed in a chamber of the substrate processing apparatus and subjected to plasma processing using plasma produced in the processing chamber. A temperature control mechanism jets a high-temperature gas toward at least part of an annular focus ring facing the plasma.

摘要翻译： 一种能够提高在晶片上进行的等离子体处理的均匀性的基板处理装置。 将晶片容纳在基板处理装置的室中，并使用在处理室中产生的等离子体处理等离子体处理。 温度控制机构朝着面向等离子体的环形聚焦环的至少一部分喷射高温气体。