Thin film capacitor, thin film capacitor-embedded printed circuit board and manufacturing method of thin film capacitor
    2.
    发明申请
    Thin film capacitor, thin film capacitor-embedded printed circuit board and manufacturing method of thin film capacitor 有权
    薄膜电容器,薄膜电容器嵌入式印刷电路板以及薄膜电容器的制造方法

    公开(公告)号:US20080236878A1

    公开(公告)日:2008-10-02

    申请号:US12076989

    申请日:2008-03-26

    IPC分类号: H05K1/18 H01G4/10 H01G7/00

    摘要: There is provided a thin film capacitor and a capacitor-embedded printed board improved in leakage current characteristics. A dielectric layer is formed of a BiZnNb-based amorphous metal oxide with a predetermined dielectric constant without being heat treated at a high temperature, and metallic phase bismuth of the BiZnNb-based amorphous metal oxide is adjusted in content to attain a desired dielectric constant. Also, another dielectric layer having a different content of metallic phase bismuth may be formed. The thin film capacitor including: a first electrode; a dielectric layer including a first dielectric film formed on the first electrode, the dielectric layer comprising a BiZnNb-based amorphous metal oxide; and a second electrode formed on the dielectric layer, wherein the BiZnNb-based amorphous metal oxide contains metallic phase bismuth.

    摘要翻译: 提供了薄膜电容器和电容器嵌入式印刷电路板,改善了漏电流特性。 电介质层由具有预定介电常数的BiZnNb基非晶态金属氧化物形成,而不在高温下进行热处理,并且将BiZnNb基非晶态金属氧化物的金属相铋的含量调节到所需的介电常数。 此外,可以形成具有不同金属相铋含量的另一介质层。 所述薄膜电容器包括:第一电极; 介电层,包括形成在所述第一电极上的第一电介质膜,所述电介质层包含BiZnNb基非晶态金属氧化物; 以及形成在所述电介质层上的第二电极,其中所述BiZnNb基非晶态金属氧化物含有金属相铋。

    Thin film capacitor, thin film capacitor-embedded printed circuit board and manufacturing method of thin film capacitor
    3.
    发明授权
    Thin film capacitor, thin film capacitor-embedded printed circuit board and manufacturing method of thin film capacitor 有权
    薄膜电容器,薄膜电容器嵌入式印刷电路板以及薄膜电容器的制造方法

    公开(公告)号:US07943858B2

    公开(公告)日:2011-05-17

    申请号:US12076989

    申请日:2008-03-26

    IPC分类号: H05K1/16

    摘要: There is provided a thin film capacitor and a capacitor-embedded printed board improved in leakage current characteristics. A dielectric layer is formed of a BiZnNb-based amorphous metal oxide with a predetermined dielectric constant without being heat treated at a high temperature, and metallic phase bismuth of the BiZnNb-based amorphous metal oxide is adjusted in content to attain a desired dielectric constant. Also, another dielectric layer having a different content of metallic phase bismuth may be formed. The thin film capacitor including: a first electrode; a dielectric layer including a first dielectric film formed on the first electrode, the dielectric layer comprising a BiZnNb-based amorphous metal oxide; and a second electrode formed on the dielectric layer, wherein the BiZnNb-based amorphous metal oxide contains metallic phase bismuth.

    摘要翻译: 提供了薄膜电容器和电容器嵌入式印刷电路板,改善了漏电流特性。 电介质层由具有预定介电常数的BiZnNb基非晶态金属氧化物形成,而不在高温下进行热处理,并且将BiZnNb基非晶态金属氧化物的金属相铋的含量调节到所需的介电常数。 此外,可以形成具有不同金属相铋含量的另一介质层。 所述薄膜电容器包括:第一电极; 介电层,包括形成在所述第一电极上的第一电介质膜,所述电介质层包含BiZnNb基非晶态金属氧化物; 以及形成在所述电介质层上的第二电极,其中所述BiZnNb基非晶态金属氧化物含有金属相铋。

    Inertial Sensor
    10.
    发明申请
    Inertial Sensor 有权
    惯性传感器

    公开(公告)号:US20120043855A1

    公开(公告)日:2012-02-23

    申请号:US13284752

    申请日:2011-10-28

    IPC分类号: G01P15/09

    摘要: Disclosed herein is an inertial sensor of the present invention. An inertial sensor 100 according to a preferred embodiment of the present invention includes a plate-shaped membrane 110, a mass body 120 disposed under a central portion 113 of the membrane 110, a post 130 disposed under an edge 115 of the membrane 110 and surrounding the mass body 120, a piezoelectric material 140 formed above the membrane 110 and provided with a cavity 141 in a thickness direction, a sensing electrode 150 disposed in the cavity 141 and a driving electrode 160 disposed outside the cavity 141, whereby the thickness of the piezoelectric material 140 of the portion on which the sensing electrode 150 is disposed is formed to be thin, such that the sensitivity of the inertial sensor 100 can be improved.

    摘要翻译: 本文公开了本发明的惯性传感器。 根据本发明的优选实施例的惯性传感器100包括板状膜110,设置在膜110的中心部分113下方的质量体120,设置在膜110的边缘115下方的周边 质量体120,形成在膜110上方并且在厚度方向上设置有空腔141的压电材料140,设置在空腔141中的感测电极150和设置在空腔141外部的驱动电极160,由此, 将设置有感测电极150的部分的压电材料140形成为较薄,使得可以提高惯性传感器100的灵敏度。