公开(公告)号：US08134357B2

公开(公告)日：2012-03-13

申请号：US12777942

申请日：2010-05-11

申请人： Jung-Chuan Chou ,  Wei-Chuan Chen ,  Cheng-Wei Chen ,  Chien-Cheng Chen

发明人： Jung-Chuan Chou ,  Wei-Chuan Chen ,  Cheng-Wei Chen ,  Chien-Cheng Chen

IPC分类号： G01R13/00

CPC分类号： G01N27/27

摘要： The invention provides a multi-electrode measuring system including a front end device which is a sensing device including a multi-electrode sensing device having a plurality of electrodes; a multi-channel fixture coupled to the multi-electrode sensing device; and a reference electrode. A back-end device as a virtual instrumentation is an electronic device including a read out circuit device coupled to the multi-channel fixture and the reference electrode for receiving each original signal from each electrode of the multi-electrode sensing device and the reference electrode determining a sample solution; a data acquisition device coupled to the read out circuit device for digitizing each original signal to form a digital signal and for array sampling; and a signal processing device coupled to the data acquisition device for processing each signal.

摘要翻译： 本发明提供一种多电极测量系统，包括前端装置，其是包括具有多个电极的多电极感测装置的感测装置; 耦合到所述多电极感测装置的多通道固定装置; 和参考电极。 作为虚拟仪器的后端设备是包括耦合到多通道固定装置的读出电路装置和参考电极的电子装置，用于从多电极感测装置的每个电极接收每个原始信号，并且参考电极确定 样品溶液; 耦合到读出电路装置的数据采集装置，用于数字化每个原始信号以形成数字信号并进行阵列采样; 以及耦合到数据采集装置的信号处理装置，用于处理每个信号。

公开(公告)号：US20110115473A1

公开(公告)日：2011-05-19

申请号：US12777942

申请日：2010-05-11

申请人： Jung-Chuan Chou ,  Wei-Chuan Chen ,  Cheng-Wei Chen ,  Chien-Cheng Chen

发明人： Jung-Chuan Chou ,  Wei-Chuan Chen ,  Cheng-Wei Chen ,  Chien-Cheng Chen

IPC分类号： G01R5/14

CPC分类号： G01N27/27

摘要： The invention provides a multi-electrode measuring system including a front end device which is a sensing device including a multi-electrode sensing device having a plurality of electrodes; a multi-channel fixture coupled to the multi-electrode sensing device; and a reference electrode. A back-end device as a virtual instrumentation is an electronic device including a read out circuit device coupled to the multi-channel fixture and the reference electrode for receiving each original signal from each electrode of the multi-electrode sensing device and the reference electrode determining a sample solution; a data acquisition device coupled to the read out circuit device for digitizing each original signal to form a digital signal and for array sampling; and a signal processing device coupled to the data acquisition device for processing each signal.

摘要翻译： 本发明提供一种多电极测量系统，包括前端装置，其是包括具有多个电极的多电极感测装置的感测装置; 耦合到所述多电极感测装置的多通道固定装置; 和参考电极。 作为虚拟仪器的后端设备是包括耦合到多通道固定装置的读出电路装置和参考电极的电子装置，用于从多电极感测装置的每个电极接收每个原始信号，并且参考电极确定 样品溶液; 耦合到读出电路装置的数据采集装置，用于数字化每个原始信号以形成数字信号并进行阵列采样; 以及耦合到数据采集装置的信号处理装置，用于处理每个信号。

公开(公告)号：US08148756B2

公开(公告)日：2012-04-03

申请号：US12410665

申请日：2009-03-25

申请人： Jung-Chuan Chou ,  Chih-Yu Lin ,  Wei-Chuan Chen ,  Cheng-Wei Chen

发明人： Jung-Chuan Chou ,  Chih-Yu Lin ,  Wei-Chuan Chen ,  Cheng-Wei Chen

IPC分类号： H01L23/58 ,  H01L27/14

CPC分类号： G01N27/4145 ,  H01L2924/0002 ,  H01L2924/00

摘要： A separative extended gate field effect transistor based uric acid sensing device is provided, including: a substrate; a conductive layer including a silver paste layer on the substrate and a graphite-based paste layer on the silver paste layer; a conductive wire extended from the conductive layer; a titanium dioxide layer on the conductive layer; and a uric acid enzyme sensing film on the titanium dioxide layer.

摘要翻译： 提供一种基于分离扩展栅极场效应晶体管的尿酸感测装置，包括：基板; 在基材上包含银膏层的导电层和银膏层上的石墨基膏层; 从导电层延伸的导线; 导电层上的二氧化钛层; 和二氧化钛层上的尿酸酶感测膜。

公开(公告)号：US20090032891A1

公开(公告)日：2009-02-05

申请号：US11954217

申请日：2007-12-12

申请人： Cheng-Tyng Yen ,  Wei-Chuan Chen ,  Yung-Hsiang Chen ,  Yung-Hung Wang

发明人： Cheng-Tyng Yen ,  Wei-Chuan Chen ,  Yung-Hsiang Chen ,  Yung-Hung Wang

IPC分类号： H01L29/82 ,  H01L21/8246

CPC分类号： H01L27/222 ,  B82Y10/00 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675

摘要： A structure of magnetic random access memory includes a magnetic memory cell formed on a substrate. An insulating layer covers over the substrate and the magnetic memory cell. A write current line is in the insulating layer and above the magnetic memory cell. A magnetic cladding layer surrounds the periphery of the write current line. The magnetic cladding layer includes a first region surrounding the top of the write current line, and a second region surrounding the side edge of the write current line, and extending towards the magnetic memory cell and exceed by a distance.

摘要翻译： 磁性随机存取存储器的结构包括形成在衬底上的磁存储单元。 绝缘层覆盖在基板和磁存储单元上。 写入电流线位于绝缘层中并位于磁存储单元之上。 磁性覆层围绕写入电流线的周边。 磁性包覆层包括围绕写入电流线的顶部的第一区域和围绕写入电流线的侧边缘的第二区域，并朝向磁性存储单元延伸并且超过一定距离。

公开(公告)号：US20070172964A1

公开(公告)日：2007-07-26

申请号：US11308903

申请日：2006-05-24

申请人： Cheng-Tyng Yen ,  Wei-Chuan Chen ,  Kuei-Hung Shen

发明人： Cheng-Tyng Yen ,  Wei-Chuan Chen ,  Kuei-Hung Shen

IPC分类号： H01L21/00

CPC分类号： H01L43/12

摘要： A method of forming a self-aligned contact via for a MRAM is disclosed. A first conductive layer, a pinned layer, a tunneling barrier layer, a free layer, a capping layer and a first dielectric layer are formed sequentially over a substrate has formed lots of transistors and interconects. A portion of the first dielectric layer and the capping layer are removed until a surface of the free layer is exposed. A portion of the pinned layer, the tunneling barrier layer and the free layer are removed to form a MRAM device. A second dielectric layer is formed over the magnetic random access memory device. A planarization process is performed to form a planar surface of the second dielectric layer. The first dielectric layer and a portion of the second dielectric layer are removed to form a self-aligned contact opening. A second conductive layer is filled into the self-aligned contact opening.

摘要翻译： 公开了一种形成用于MRAM的自对准接触通孔的方法。 在衬底上顺序地形成第一导电层，钉扎层，隧道势垒层，自由层，覆盖层和第一介电层，形成了许多晶体管和相互间的关系。 去除第一电介质层和覆盖层的一部分直到暴露自由层的表面。 钉扎层的一部分，隧道势垒层和自由层被去除以形成MRAM器件。 第二电介质层形成在磁性随机存取存储器件上。 进行平面化处理以形成第二电介质层的平坦表面。 去除第一电介质层和第二电介质层的一部分以形成自对准的接触开口。 将第二导电层填充到自对准接触开口中。

公开(公告)号：US20060254650A1

公开(公告)日：2006-11-16

申请号：US11411789

申请日：2006-04-27

申请人： Shinn-Tyan Wu ,  Wei-Chuan Chen

发明人： Shinn-Tyan Wu ,  Wei-Chuan Chen

IPC分类号： F16K27/06

CPC分类号： F16K27/00 ,  E03C1/04 ,  F16K11/00 ,  F16K19/006 ,  Y10T137/7036

摘要： A composite faucet includes a body coated with refractory material, the body directly contacting with water is made of metallic alloys; the body already coated with refractory material is further covered with a plastic material by injection for easier fabrication.

摘要翻译： 复合龙头包括涂有耐火材料的主体，与水直接接触的主体由金属合金制成; 已经涂覆有耐火材料的身体通过注射进一步用塑料材料覆盖以便于制造。

公开(公告)号：US20060102971A1

公开(公告)日：2006-05-18

申请号：US11159137

申请日：2005-06-23

申请人： Yuan-Jen Lee ,  Yung-Hsiang Chen ,  Wei-Chuan Chen ,  Ming-Jer Kao ,  Lien-Chang Wang

发明人： Yuan-Jen Lee ,  Yung-Hsiang Chen ,  Wei-Chuan Chen ,  Ming-Jer Kao ,  Lien-Chang Wang

IPC分类号： H01L43/00 ,  H01L29/82 ,  G11C11/22

CPC分类号： G11C11/16 ,  B82Y25/00 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

摘要： A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer formed on the tunnel barrier layer, and a multi-layered metal layer. The multi-layered metal layer is formed by at least one metal layer, where the direction of the anisotropy axis of the antiferromagnetic layer and the ferromagnetic layer and that of the ferromagnetic free layer are arranged orthogonally. The provided memory has the advantage of lowering the switching field of the ferromagnetic layer, and further lowering the writing current.

摘要翻译： 提供具有较低开关电场的磁性随机存取存储器。 存储器包括第一反铁磁层，形成在第一反铁磁层上的钉扎层，形成在钉扎层上的隧道势垒层，形成在隧道势垒层上的铁磁自由层，以及多层金属层。 多层金属层由至少一个金属层形成，其中反铁磁层和铁磁层的各向异性轴的方向和铁磁性层的各向异性轴的方向被正交布置。 提供的存储器具有降低铁磁层的开关场的优点，并进一步降低写入电流。

公开(公告)号：US06405994B1

公开(公告)日：2002-06-18

申请号：US09746303

申请日：2000-12-22

申请人： Wei-Chuan Chen

发明人： Wei-Chuan Chen

IPC分类号： F16K31126

CPC分类号： F16K7/10 ,  Y10T137/86734

摘要： A flow control valve which does not utilize any moving components in the valve is disclosed. In the flow control valve, a valve housing that has a cylindrical-shaped wall is first provided. Inside the valve housing, is then provided a first and a second end plate for sealingly engaging an inner periphery of the valve housing. The first and the second end plate are positioned spaced-apart in a predetermined distance while each of the end plates has at least one aperture therethrough for the passage of a fluid flow to be controlled. Inside a valve cavity formed between the two end plates and the inner periphery of the valve housing is positioned an inflatable bag such that when a fluid is flown into the inflatable bag, the bag inflates to either partially block or completely block the fluid passageway through the valve cavity.

摘要翻译： 公开了一种不利用阀中的任何移动部件的流量​​控制阀。 在流量控制阀中，首先设置具有圆筒形壁的阀壳体。 然后在阀壳体内设置有用于密封地接合阀壳体的内周边的第一和第二端板。 第一端板和第二端板以预定距离间隔开定位，而每个端板具有穿过其中的至少一个孔，用于通过待控制的流体流。 在形成在两个端板和阀壳体的内周之间的阀腔内部设置有可膨胀的袋，使得当流体流入可充气袋时，袋膨胀以部分阻塞或完全阻塞流体通道 阀腔。

公开(公告)号：US09245608B2

公开(公告)日：2016-01-26

申请号：US13571406

申请日：2012-08-10

申请人： Wei-Chuan Chen ,  Kangho Lee ,  Xiaochun Zhu ,  Seung H. Kang

发明人： Wei-Chuan Chen ,  Kangho Lee ,  Xiaochun Zhu ,  Seung H. Kang

IPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/15

CPC分类号： H01L43/02 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： Perpendicular magnetic anisotropy (PMA) type magnetic random access memory cells are constructed with a composite PMA layer to provide a magnetic tunnel junction (MTJ) with an acceptable thermal barrier. A PMA coupling layer is deposited between a first PMA layer and a second PMA layer to form the composite PMA layer. The composite PMA layer may be incorporated in PMA type MRAM cells or in-plane type MRAM cells.

摘要翻译： 垂直磁各向异性（PMA）型磁性随机存取存储单元由复合PMA层构成，以提供具有可接受热障的磁隧道结（MTJ）。 在第一PMA层和第二PMA层之间沉积PMA结合层以形成复合PMA层。 复合PMA层可以并入PMA型MRAM细胞或平面内MRAM细胞中。

公开(公告)号：US07829964B2

公开(公告)日：2010-11-09

申请号：US12398181

申请日：2009-03-05

申请人： Wei-Chuan Chen ,  Cheng-Tyng Yen ,  Ding-Yeong Wang

发明人： Wei-Chuan Chen ,  Cheng-Tyng Yen ,  Ding-Yeong Wang

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/161

摘要： A magnetic memory element utilizing spin transfer switching includes a pinned layer, a tunneling barrier layer and a free layer structure. The tunneling barrier layer is disposed on the pinned layer. The free layer structure includes a composite free layer. The composite free layer includes a first free layer, an insert layer and a second free layer. The first free layer is disposed on the tunneling barrier layer and has a first spin polarization factor and a first saturation magnetization. The insert layer is disposed on the first free layer. The second free layer is disposed on the insert layer and has a second spin polarization factor smaller than the first spin polarization factor and a second saturation magnetization smaller than the first saturation magnetization. Magnetization vectors of the first free layer and the second free layer are arranged as parallel-coupled.

摘要翻译： 利用自旋转移切换的磁存储元件包括钉扎层，隧道势垒层和自由层结构。 隧道势垒层设置在钉扎层上。 自由层结构包括复合自由层。 复合自由层包括第一自由层，插入层和第二自由层。 第一自由层设置在隧道势垒层上并具有第一自旋极化因数和第一饱和磁化强度。 插入层设置在第一自由层上。 第二自由层设置在插入层上，并且具有小于第一自旋极化因子的第二自旋极化因子和小于第一饱和磁化强度的第二饱和磁化强度。 第一自由层和第二自由层的磁化矢量被布置成平行耦合。