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31 条记录 (耗时 0.035 秒)

    High-power, broad-band, superluminescent diode and method of fabricating the same
    4.
    发明授权
    High-power, broad-band, superluminescent diode and method of fabricating the same 有权
    大功率，宽带，超发光二极管及其制造方法

    公开(公告)号：US07745836B2

    公开(公告)日：2010-06-29

    申请号：US12118543

    申请日：2008-05-09

    申请人： Jung-Ho Song ,  Ki-Soo Kim ,  Young-Ahn Leem ,  Gyung-Ock Kim

    发明人： Jung-Ho Song ,  Ki-Soo Kim ,  Young-Ahn Leem ,  Gyung-Ock Kim

    IPC分类号： H01L29/16

    CPC分类号： H01L33/0045 ,  H01L33/02

    摘要： Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate.

    摘要翻译： 提供了具有高光功率和宽波长带的超发光二极管及其制造方法。 超发光二极管包括：至少一个高光限制因子（HOCF）区域; 以及具有比HOCF区域更低的光限制因子的至少一个低光限制因子（LOCF）区域。 该方法包括通过选择性区域生长方法获得HOCF区域和LOCF区域中的光限制因子的差异，所述选择性区域生长方法使用根据暴露衬底的开口的宽度差的薄层的沉积厚度差。

    HIGH-POWER, BROAD-BAND, SUPERLUMINESCENT DIODE AND METHOD OF FABRICATING THE SAME
    5.
    发明申请
    HIGH-POWER, BROAD-BAND, SUPERLUMINESCENT DIODE AND METHOD OF FABRICATING THE SAME 有权
    高功率，宽带，超亮度二极管及其制造方法

    公开(公告)号：US20090152528A1

    公开(公告)日：2009-06-18

    申请号：US12118543

    申请日：2008-05-09

    申请人： Jung-Ho SONG ,  Ki-Soo Kim ,  Young-Ahn Leem ,  Gyung-Ock Kim

    发明人： Jung-Ho SONG ,  Ki-Soo Kim ,  Young-Ahn Leem ,  Gyung-Ock Kim

    IPC分类号： H01L29/06 ,  H01L21/02

    CPC分类号： H01L33/0045 ,  H01L33/02

    摘要： Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate.

    摘要翻译： 提供了具有高光功率和宽波长带的超发光二极管及其制造方法。 超发光二极管包括：至少一个高光限制因子（HOCF）区域; 以及具有比HOCF区域更低的光限制因子的至少一个低光限制因子（LOCF）区域。 该方法包括通过选择性区域生长方法获得HOCF区域和LOCF区域中的光限制因子的差异，所述选择性区域生长方法使用根据暴露衬底的开口的宽度差的薄层的沉积厚度差。

    SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME 有权
    半导体器件及其形成方法

    公开(公告)号：US20100301448A1

    公开(公告)日：2010-12-02

    申请号：US12847974

    申请日：2010-07-30

    申请人： O-Kyun KWON ,  Dong-Woo Suh ,  Junghyung Pyo ,  Gyung-Ock Kim

    发明人： O-Kyun KWON ,  Dong-Woo Suh ,  Junghyung Pyo ,  Gyung-Ock Kim

    IPC分类号： H01L27/12

    CPC分类号： H01L21/76267 ,  H01L21/76283

    摘要： Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

    摘要翻译： 提供半导体及其形成方法。 该方法包括在衬底中局部形成掩埋绝缘层。 蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。 形成第一绝缘层以包围硅图案。

    Waveguide structure
    7.
    发明授权
    Waveguide structure 失效
    波导结构

    公开(公告)号：US07693384B2

    公开(公告)日：2010-04-06

    申请号：US12111884

    申请日：2008-04-29

    申请人： Jong-Moo Lee ,  Duk-Jun Kim ,  O-Kyun Kwon ,  Gyung-Ock Kim

    发明人： Jong-Moo Lee ,  Duk-Jun Kim ,  O-Kyun Kwon ,  Gyung-Ock Kim

    IPC分类号： G02B6/10

    CPC分类号： G02B6/12007

    摘要： A waveguide structure is provided. The waveguide structure includes: a slot channel waveguide including first and second patterns, which are spaced apart from each other to define a slot; a first upper layer covering at least a portion of the slot channel waveguide; and a second upper layer covering the remaining portion of the slot channel waveguide. A thermo-optic coefficient (TOC) of the channel waveguide times a TOC of the second upper layer is a negative number.

    摘要翻译： 提供了一种波导结构。 波导结构包括：缝隙通道波导，包括第一和第二图案，它们彼此间隔开以限定狭槽; 覆盖所述槽道波导的至少一部分的第一上层; 以及覆盖槽道波导的剩余部分的第二上层。 通道波导的热光系数（TOC）乘以第二上层的TOC是负数。

    Semiconductor device and method for forming the same
    8.
    发明授权
    Semiconductor device and method for forming the same 有权
    半导体装置及其形成方法

    公开(公告)号：US08183633B2

    公开(公告)日：2012-05-22

    申请号：US12847974

    申请日：2010-07-30

    申请人： O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

    发明人： O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

    IPC分类号： H01L27/12

    CPC分类号： H01L21/76267 ,  H01L21/76283

    摘要： Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

    摘要翻译： 提供半导体及其形成方法。 该方法包括在衬底中局部形成掩埋绝缘层。 蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。 形成第一绝缘层以包围硅图案。

    Semiconductor integrated circuits including grating coupler for optical communication and methods of forming the same
    9.
    发明授权
    Semiconductor integrated circuits including grating coupler for optical communication and methods of forming the same 有权
    包括用于光通信的光栅耦合器的半导体集成电路及其形成方法

    公开(公告)号：US08165437B2

    公开(公告)日：2012-04-24

    申请号：US12684677

    申请日：2010-01-08

    申请人： Jung-Hyung Pyo ,  O-Kyun Kwon ,  Gyung-Ock Kim

    发明人： Jung-Hyung Pyo ,  O-Kyun Kwon ,  Gyung-Ock Kim

    IPC分类号： G02B6/34 ,  G02B6/42

    CPC分类号： G02B6/34 ,  G02B6/124 ,  G02B6/30

    摘要： Provided are semiconductor integrated circuits including a grating coupler for optical communication and methods of forming the same. The semiconductor integrated circuit includes: a cladding layer disposed on a semiconductor substrate; a grating coupler including an optical waveguide on the cladding layer and a grating on the optical waveguide; and at least one reflector formed in the cladding layer below the grating.

    摘要翻译： 提供了包括用于光通信的光栅耦合器的半导体集成电路及其形成方法。 半导体集成电路包括：设置在半导体衬底上的覆层; 包括在所述包层上的光波导的光栅耦合器和所述光波导上的光栅; 以及形成在光栅下方的包覆层中的至少一个反射器。

    Semiconductor device and method for forming the same
    10.
    发明授权
    Semiconductor device and method for forming the same 有权
    半导体装置及其形成方法

    公开(公告)号：US07790567B2

    公开(公告)日：2010-09-07

    申请号：US12130877

    申请日：2008-05-30

    申请人： O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

    发明人： O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

    IPC分类号： H01L21/76

    CPC分类号： H01L21/76267 ,  H01L21/76283

    摘要： Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

    摘要翻译： 提供半导体及其形成方法。 该方法包括在衬底中局部形成掩埋绝缘层。 蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。 形成第一绝缘层以包围硅图案。