公开(公告)号：US08338242B2

公开(公告)日：2012-12-25

申请号：US13077257

申请日：2011-03-31

申请人： Jung-Tzu Hsu ,  Ching-Chung Pai ,  Yu-Hsien Lin ,  Jyh-Huei Chen

发明人： Jung-Tzu Hsu ,  Ching-Chung Pai ,  Yu-Hsien Lin ,  Jyh-Huei Chen

IPC分类号： H01L21/338

CPC分类号： H01L29/4983 ,  H01L21/26586 ,  H01L29/66545 ,  H01L29/7834 ,  H01L29/7848

摘要： The disclosure provides methods and structures for preventing exposing polysilicon layer and silicon substrate on the substrate backside to polysilicon etching chemistry during removal of the dummy polysilicon layer in replacement gate structures. A thermal deposition process or processes are used to deposit a dielectric layer for offset spacers and/or a contact etch stop layer (CESL) to cover the polysilicon layer on the substrate backside. Such mechanisms reduce or eliminate particles originated at bevel of substrate backside, due to complete removal of the polysilicon layer at the backside bevel and the resultant etching of silicon substrate.

摘要翻译： 本公开提供了用于在替代栅极结构中去除虚设多晶硅层期间防止在衬底背面暴露多晶硅蚀刻化学物质的多晶硅层和硅衬底的方法和结构。 使用热沉积工艺或工艺沉积用于偏置间隔物和/或接触蚀刻停止层（CESL）的电介质层以覆盖衬底背面上的多晶硅层。 由于在后侧斜面处的多晶硅层的完全去除以及由此导致的硅衬底的蚀刻，这种机理减少或消除了源自衬底背面的斜面的颗粒。

公开(公告)号：US09082789B2

公开(公告)日：2015-07-14

申请号：US13107636

申请日：2011-05-13

申请人： Chun-Hung Huang ,  Yu-Hsien Lin ,  Ming-Yi Lin ,  Jyh-Huei Chen

发明人： Chun-Hung Huang ,  Yu-Hsien Lin ,  Ming-Yi Lin ,  Jyh-Huei Chen

IPC分类号： H01L21/8234 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/165 ,  H01L29/78 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51

CPC分类号： H01L29/66545 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833

摘要： An integrated circuit device and method for manufacturing an integrated circuit device is disclosed. The integrated circuit device comprises a core device and an input/output circuit. Each of the core device and input/output circuit includes a PMOS structure and an NMOS structure. Each of the PMOS includes a p-type metallic work function layer over a high-k dielectric layer, and each of the NMOS structure includes an n-type metallic work function layer over a high-k dielectric layer. There is an oxide layer under the high-k dielectric layer in the input/output circuit.

摘要翻译： 公开了一种用于制造集成电路器件的集成电路器件和方法。 集成电路装置包括核心装置和输入/输出电路。 核心器件和输入/输出电路中的每一个包括PMOS结构和NMOS结构。 每个PMOS包括在高k电介质层上的p型金属功函数层，并且每个NMOS结构包括在高k电介质层上的n型金属功函数层。 在输入/输出电路中的高k电介质层下方有氧化层。

公开(公告)号：US08051899B2

公开(公告)日：2011-11-08

申请号：US11979807

申请日：2007-11-08

申请人： Chin-Ming Chen ,  Yu-Hung Huang ,  Yu-Hsien Lin

发明人： Chin-Ming Chen ,  Yu-Hung Huang ,  Yu-Hsien Lin

IPC分类号： F28D15/00 ,  H05K7/20

CPC分类号： H01L23/467 ,  H01L2924/0002 ,  H01L2924/00

摘要： A heat dissipating module includes a fan and a heat sink. The heat sink comprises a body and at least one movable member. The body comprises a plurality of fins, at least one first slot and at least one second slot. The first and second slots are integrally formed on the body as a single piece. The movable member, rotatably or movably coupled to the first slot, comprises a pivoting portion, an operating portion, a jointing portion and at least one fixing portion. The pivoting portion is rotatably or movably received in the first slot. A first end of the operating portion connects to the pivoting portion, rotating or moving the pivoting portion. The jointing portion, at a second end of the operating portion, selectively connects to or separates from the second slot. The fixing portion protrudes from the pivoting portion, abutting and securing the fan to the heat sink.

摘要翻译： 散热模块包括风扇和散热器。 散热器包括主体和至少一个可动构件。 主体包括多个翅片，至少一个第一狭槽和至少一个第二狭槽。 第一和第二槽一体地形成在主体上作为单件。 可移动或可移动地联接到第一槽的可动构件包括枢转部分，操作部分，接合部分和至少一个固定部分。 枢转部分可旋转地或可移动地容纳在第一槽中。 操作部分的第一端连接到枢转部分，旋转或移动枢转部分。 在操作部分的第二端处的接合部分选择性地连接到第二槽或从第二槽分离。 固定部从枢转部突出，将风扇抵接并固定到散热器。

公开(公告)号：US07999446B1

公开(公告)日：2011-08-16

申请号：US12662021

申请日：2010-03-29

申请人： Wen-Kuang Hsu ,  Hsin-Fu Kuo ,  Yu-Hsien Lin ,  Chiung-Wen Tang ,  Chieh-Lien Lu ,  Yao-Cheng Lai

发明人： Wen-Kuang Hsu ,  Hsin-Fu Kuo ,  Yu-Hsien Lin ,  Chiung-Wen Tang ,  Chieh-Lien Lu ,  Yao-Cheng Lai

IPC分类号： H01L41/08

CPC分类号： H02N2/18 ,  H01L41/081 ,  H01L41/1136 ,  H01L41/316

摘要： A piezoelectronic device and a method of fabricating the same are disclosed. The piezoelectronic device of the present invention comprises: a plurality of carbon nanotubes; at least one piezoceramic layer covering the plurality of carbon nanotubes; and a supporting material for supporting the carbon nanotubes and disposed between the carbon nanotubes, the supporting layer being coated with at least one piezoceramic layer, wherein the plurality of carbon nanotubes is arranged in a comb-shape. The piezoelectronic device of the present invention is advantageous in having excellent elasticity (durability) and excellent piezoelectronical property. The induced current obtained from the piezoelectronic device of the present invention is about 1.5 μA or above as well as induced voltage being over 1V when the size of the piezoelectronic block is 2.5 mm×1 mm×1 mm (length×width×height).

摘要翻译： 公开了一种压电装置及其制造方法。 本发明的压电装置包括：多个碳纳米管; 覆盖所述多个碳纳米管的至少一个压电陶瓷层; 以及用于支撑所述碳纳米管并且设置在所述碳纳米管之间的支撑材料，所述支撑层被涂覆有至少一个压电陶瓷层，其中所述多个碳纳米管被布置为梳状。 本发明的压电元件具有优异的弹性（耐久性）和优异的压电特性。 当压电电极块的尺寸为2.5mm×1mm×1mm（长×宽×高））时，从本发明的压电装置获得的感应电流为约1.5μA以上，感应电压为1V以上。

公开(公告)号：US07967577B2

公开(公告)日：2011-06-28

申请号：US11708317

申请日：2007-02-21

申请人： Chin-Ming Chen ,  Yu-Hsien Lin ,  Cheng-Chih Lee

发明人： Chin-Ming Chen ,  Yu-Hsien Lin ,  Cheng-Chih Lee

IPC分类号： F04B17/03 ,  H05K7/20

CPC分类号： H05K7/20172

摘要： A fastening structure for a fan has a frame which includes a fastening member having a vertical portion fixed to the frame, and an extending portion extending towards the interior of the frame and having a protrusion, where when the fan is assembled with the fastening structure, the fan is rotated along an axle thereof to closely fit the protrusion in an hole of the outer frame of the fan so that the fan can be fixed on the frame.

摘要翻译： 用于风扇的紧固结构具有框架，该框架包括具有固定到框架的垂直部分的紧固构件和朝向框架内部延伸并具有突出部的延伸部分，当风扇与紧固结构组装时， 风扇沿其轴线旋转以将突起紧密地配合到风扇的外框架的孔中，使得风扇可以固定在框架上。

公开(公告)号：US07352577B2

公开(公告)日：2008-04-01

申请号：US11185862

申请日：2005-07-21

申请人： Lee-Long Chen ,  Chien-Hsiung Huang ,  Yu-Hsien Lin ,  Wen-Shi Huang ,  Chin-Ming Chen

发明人： Lee-Long Chen ,  Chien-Hsiung Huang ,  Yu-Hsien Lin ,  Wen-Shi Huang ,  Chin-Ming Chen

IPC分类号： H05K7/20

CPC分类号： F28F3/12 ,  F28D7/026 ,  F28D2021/0031 ,  H01L23/473 ,  H01L2924/0002 ,  H01L2924/00

摘要： A liquid-cooled heat dissipation module for circularly dissipating heat from a heat source. The liquid-cooled heat dissipation module includes a fan having a base; a pump disposed on the base; a heat sink coupled to the fan and having an opening to receive the pump; and a guide part disposed in the opening of the heat sink, communicated to the pump and having an outer surface, a through hole and a guide passage formed on the outer surface. The pump drives a working fluid in the liquid-cooled heat dissipation module to pass through the through hole, the pump and the guide passage to circularly dissipate heat.

摘要翻译： 一种用于从热源循环散热的液冷式散热模块。 液冷散热模块包括：具有底座的风扇; 设置在基座上的泵; 耦合到所述风扇并具有用于接收所述泵的开口的散热器; 以及引导部，其设置在所述散热器的所述开口中，连通到所述泵并具有形成在所述外表面上的外表面，通孔和引导通道。 泵驱动液冷散热模块中的工作流体通过通孔，泵和引导通道，以循环散热。

公开(公告)号：US20120091539A1

公开(公告)日：2012-04-19

申请号：US12905579

申请日：2010-10-15

申请人： Wei-Han Fan ,  Yu-Hsien Lin ,  Yimin Huang ,  Ming-Huan Tsai ,  Hsueh-Chang Sung ,  Chun-Fai Cheng

发明人： Wei-Han Fan ,  Yu-Hsien Lin ,  Yimin Huang ,  Ming-Huan Tsai ,  Hsueh-Chang Sung ,  Chun-Fai Cheng

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/165 ,  H01L21/28123 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

摘要： An exemplary semiconductor device is described, which includes a semiconductor substrate having an active region and an isolation region. The active region has a first edge which interfaces with the isolation region. A gate structure formed on the semiconductor substrate. A spacer element abuts the gate structure and overlies the first edge. In an embodiment, the isolation region is an STI structure. An epitaxy region may be formed adjacent the spacer. In embodiments, this epitaxy region is facet-free.

摘要翻译： 描述了一种示例性的半导体器件，其包括具有有源区和隔离区的半导体衬底。 有源区域具有与隔离区域相接合的第一边缘。 形成在半导体衬底上的栅极结构。 间隔元件邻接栅极结构并覆盖在第一边缘上。 在一个实施例中，隔离区域是STI结构。 可以在间隔物附近形成外延区域。 在实施例中，该外延区域是无面的。

公开(公告)号：US20110187240A1

公开(公告)日：2011-08-04

申请号：US12662021

申请日：2010-03-29

申请人： Wen-Kuang Hsu ,  Hsin-Fu Kuo ,  Yu-Hsien Lin ,  Chiung-Wen Tang ,  Chieh-Lien Lu ,  Yao-Cheng Lai

发明人： Wen-Kuang Hsu ,  Hsin-Fu Kuo ,  Yu-Hsien Lin ,  Chiung-Wen Tang ,  Chieh-Lien Lu ,  Yao-Cheng Lai

IPC分类号： H01L41/18 ,  H01L41/22

CPC分类号： H02N2/18 ,  H01L41/081 ,  H01L41/1136 ,  H01L41/316

摘要： A piezoelectronic device and a method of fabricating the same are disclosed. The piezoelectronic device of the present invention comprises: a plurality of carbon nanotubes; at least one piezoceramic layer covering the plurality of carbon nanotubes; and a supporting material for supporting the carbon nanotubes and disposed between the carbon nanotubes, the supporting layer being coated with at least one piezoceramic layer, wherein the plurality of carbon nanotubes is arranged in a comb-shape. The piezoelectronic device of the present invention is advantageous in having excellent elasticity (durability) and excellent piezoelectronical property. The induced current obtained from the piezoelectronic device of the present invention is about 1.5 μA or above as well as induced voltage being over 1V when the size of the piezoelectronic block is 2.5 mm×1 mm×1 mm (length×width×height).

公开(公告)号：US07763928B2

公开(公告)日：2010-07-27

申请号：US11755752

申请日：2007-05-31

申请人： Yu-Hsien Lin ,  Wen-Fang Lee ,  Ya-Huang Huang ,  Ming-Yen Liu ,  Yu-Kang Shen

发明人： Yu-Hsien Lin ,  Wen-Fang Lee ,  Ya-Huang Huang ,  Ming-Yen Liu ,  Yu-Kang Shen

IPC分类号： H01L29/76 ,  H01L29/788

CPC分类号： H01L29/7883 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11546 ,  H01L29/42324

摘要： A multi-time programmable (MTP) memory includes a tunneling dielectric layer, a floating gate, an inter-gate dielectric layer and a control gate. The tunneling dielectric layer is disposed on a substrate. The floating gate is disposed on the tunneling dielectric layer. The inter-gate dielectric layer is disposed on the floating gate, and a thickness of the inter-gate dielectric layer at edges of the floating gate is larger than a thickness of the inter-gate dielectric layer in a central portion of the floating gate. The control gate is disposed on the inter-gate dielectric layer.

摘要翻译： 多时间可编程（MTP）存储器包括隧穿介电层，浮栅，栅间电介质层和控制栅。 隧道介电层设置在基板上。 浮置栅极设置在隧道电介质层上。 栅极间电介质层设置在浮置栅极上，并且浮置栅极的边缘处的栅极间电介质层的厚度大于浮置栅极的中心部分中的栅极间电介质层的厚度。 控制栅极设置在栅极间电介质层上。

公开(公告)号：US07131779B1

公开(公告)日：2006-11-07

申请号：US11435258

申请日：2006-05-16

申请人： Yu-Hsien Lin

发明人： Yu-Hsien Lin

IPC分类号： B41J25/304

CPC分类号： B41J19/202

摘要： An actuating control device for use between a printer head and an actuating and transmitting device includes a path planning unit, a feedback unit, a proportional-integral controller and a feed forward controller. The path planning unit issues a position command value and a speed command value. The feedback unit generates a position feedback signal and a speed feedback signal according to the position and the speed of the printer head. The proportional-integral controller generates a first control signal according to the difference between the position command value and the position feedback signal and the difference between the speed command value and the speed feedback signal. The feed forward controller generates a second control signal according to a computation on the speed command value. The printer head is driven to move by the actuating and transmitting device in response to the first control signal and the second control signal.

摘要翻译： 用于在打印机头和致动和传送装置之间使用的致动控制装置包括路径规划单元，反馈单元，比例积分控制器和前馈控制器。 路径规划单元发出位置指令值和速度指令值。 反馈单元根据打印头的位置和速度产生位置反馈信号和速度反馈信号。 比例积分控制器根据位置指令值和位置反馈信号之间的差异以及速度指令值与速度反馈信号之差产生第一控制信号。 前馈控制器根据对速度指令值的计算产生第二控制信号。 响应于第一控制信号和第二控制信号，打印头由致动和发送装置驱动以移动。