摘要:
A wafer temporary bonding method using silicon direct bonding (SDB) may include preparing a carrier wafer and a device wafer, adjusting roughness of a surface of the carrier wafer, and combining the carrier wafer and the device wafer using the SDB. Because the method uses SDB, instead of an adhesive layer, for a temporary bonding process, a module or process to generate and remove an adhesive is unnecessary. Also, a defect in a subsequent process, for example, a back-grinding process, due to irregularity of the adhesive may be prevented.
摘要:
A wafer temporary bonding method using silicon direct bonding (SDB) may include preparing a carrier wafer and a device wafer, adjusting roughness of a surface of the carrier wafer, and combining the carrier wafer and the device wafer using the SDB. Because the method uses SDB, instead of an adhesive layer, for a temporary bonding process, a module or process to generate and remove an adhesive is unnecessary. Also, a defect in a subsequent process, for example, a back-grinding process, due to irregularity of the adhesive may be prevented.
摘要:
A CMOS transistor structure and related method of manufacture are disclosed in which a first conductivity type MOS transistor comprises an enhancer and a second conductivity type MOS transistor comprises a second spacer formed of the same material as the enhancer. The second conductivity type MOS transistor also comprises a source/drain region formed in relation to an epitaxial layer formed in a recess region.
摘要:
A bread maker, including a main body having a baking space and kneading drums located at an upper part and a lower part in the baking space. The kneading drums hold opposite ends of a mixing bag. A movable tray member has a plurality of combining projections at opposite side walls thereof. A fixed tray member positioned opposite the movable tray member forms a slit through which the mixing bag passes. A tray holder is coupled to each end of the fixed tray member and the movable tray member. Each tray holder fixedly supports the fixed tray member, and has a plurality of guide grooves accommodating the combining projections to rotatably support the movable tray member. Anchoring prominences are on the guide grooves adjacent to the fixed tray member, preventing the combining projections from breaking away from the guide grooves when the movable tray member rotates.
摘要:
A method of fabricating a semiconductor integrated circuit includes forming a first dielectric layer on a semiconductor substrate, patterning the first dielectric layer to form a first patterned dielectric layer, forming a non-single crystal seed layer on the first patterned dielectric layer, removing a portion of the seed layer to form a patterned seed layer, forming a second dielectric layer on the first patterned dielectric layer and the patterned seed layer, removing portions of the second dielectric layer to form a second patterned dielectric layer, irradiating the patterned seed layer to single-crystallize the patterned seed layer, removing portions of the first patterned dielectric layer and the second patterned dielectric layer such that the single-crystallized seed layer protrudes in the vertical direction with respect to the first and/or the second patterned dielectric layer, and forming a gate electrode in contact with the single-crystal active pattern.
摘要:
A semiconductor device includes a semiconductor layer formed on an insulator, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film and extending in a first direction, source/drain regions formed in the semiconductor layer on both sides of the gate electrode, a body contact region in the semiconductor layer, a partial isolating region in which a field insulating film thicker than the gate insulating film intervenes between the semiconductor layer and an extending portion of the gate electrode, and a full isolating region in which the semiconductor layer on the insulator is removed. The full isolating region is formed to be in contact with at least a part of a side parallel to the first direction of the source/drain regions.
摘要:
A bread maker having a main body forming an oven compartment, a door, a pair of parallel kneading drums, a barcode reader to read a barcode printed on a mixing bag and a reader holder. The reader holder includes a holder body, a sensing lever adjacent to a kneading drum with one end connected to one end of the holder body and the other end protruding from the main body towards the door, the sensing lever being pushed back by the door when the door is closed, and a reader supporting part extending from the holder body towards the door and supporting the barcode reader. The barcode reader moves into a reading position near the adjacent kneading drum when the door is opened and moves into a releasing position distant from the adjacent kneading drum when the door is closed.
摘要:
The present invention provides a lithium secondary battery comprising a cathode electrode containing a lithium complex oxide; an anode electrode containing metal lithium or its alloy, or carbon material; and a nonaqueous organic electrolyte containing a nonaqueous organic solvent, a lithium salt and an aromatic ether that can react to form dimers or polymers above a certain temperature and voltage and that can be expressed by Formula 1 below: wherein, R1 is independently a single bond or an alkylene group with less than or equal to 2 carbons and R2 is hydrogen or an alkyl group with less than or equal to 2 carbons. The lithium secondary battery has the advantage that its characteristics are maintained, even if it is left in its fully charged state at a high temperature for a long time and, at the same time, its reliability and stability have been improved.
摘要:
A method of fabricating a semiconductor integrated circuit includes forming a first dielectric layer on a semiconductor substrate, patterning the first dielectric layer to form a first patterned dielectric layer, forming a non-single crystal seed layer on the first patterned dielectric layer, removing a portion of the seed layer to form a patterned seed layer, forming a second dielectric layer on the first patterned dielectric layer and the patterned seed layer, removing portions of the second dielectric layer to form a second patterned dielectric layer, irradiating the patterned seed layer to single-crystallize the patterned seed layer, removing portions of the first patterned dielectric layer and the second patterned dielectric layer such that the single-crystallized seed layer protrudes in the vertical direction with respect to the first and/or the second patterned dielectric layer, and forming a gate electrode in contact with the single-crystal active pattern.
摘要:
In various embodiments, the present disclosure may provide a storage node. In various implementations, the storage node may include a bottom electrode having a non-planar bottom surface that conforms with and is connected to a non-planar top surface of a diode electrode of a memory device. The storage node may further include a phase change layer on top of a bottom diode and a top electrode on a top surface of a phase change layer.