公开(公告)号：US06567447B1

公开(公告)日：2003-05-20

申请号：US09680153

申请日：2000-10-03

申请人： Junji Yoshida ,  Naoki Tsukiji ,  Akira Iketani ,  Naoki Kimura ,  Jun Niekawa ,  Toshio Kimura ,  Takeshi Aikiyo

发明人： Junji Yoshida ,  Naoki Tsukiji ,  Akira Iketani ,  Naoki Kimura ,  Jun Niekawa ,  Toshio Kimura ,  Takeshi Aikiyo

IPC分类号： H01S500

CPC分类号： H01S5/34 ,  B82Y20/00 ,  H01S5/02216 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/02492 ,  H01S5/028 ,  H01S5/1039 ,  H01S5/146 ,  H01S5/3403

摘要： In the semiconductor laser device of the present invention, a semiconductor stacked structure including an active layer comprising a strained multi-quantum well structure is formed on a substrate 1, a cavity length is larger than 1000 &mgr;m but equal to or smaller than 1800 &mgr;m, and a low-reflection film S1 having a reflectance of 3% or less is formed on one facet and a high-reflection film S2 having a reflectance of 90% or more is formed on the other facet. The semiconductor laser module has a structure in which the semiconductor laser device is set to a cooling device constituted by electrically alternately arranging 40 pairs or more of the Peltier elements and holding them by top and bottom ceramic plates and sealed in the package. A grating having a reflection bandwidth of 1.5 nm or less is formed on an optical fiber to be built in.

摘要翻译： 在本发明的半导体激光装置中，在基板1上形成包括应变多量子阱结构的有源层的半导体层叠结构，空洞长度大于1000μm，但等于或小于1800μm， 并且在一个面上形成反射率为3％以下的低反射膜S1，另一方面形成反射率为90％以上的高反射膜S2。 半导体激光器模块具有这样的结构，其中半导体激光器件被设置为通过电气交替地布置40对或更多个珀耳帖元件并由顶部和底部陶瓷板保持并且密封在封装中的冷却装置。 在内置的光纤上形成具有1.5nm以下的反射带宽的光栅。

公开(公告)号：US07194014B2

公开(公告)日：2007-03-20

申请号：US10748159

申请日：2003-12-31

申请人： Junji Yoshida ,  Naoki Tsukiji ,  Toshio Kimura ,  Masashi Nakae ,  Takeshi Aikiyo

发明人： Junji Yoshida ,  Naoki Tsukiji ,  Toshio Kimura ,  Masashi Nakae ,  Takeshi Aikiyo

IPC分类号： H01S5/00 ,  H01S3/14

CPC分类号： H01S5/4031 ,  B82Y20/00 ,  G02B6/4206 ,  G02B6/4218 ,  H01S3/094003 ,  H01S3/094073 ,  H01S3/302 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/02438 ,  H01S5/028 ,  H01S5/0683 ,  H01S5/1039 ,  H01S5/1096 ,  H01S5/12 ,  H01S5/125 ,  H01S5/227 ,  H01S5/3215 ,  H01S5/3409 ,  H01S5/4012 ,  H01S5/4062 ,  H01S5/4087

摘要： A semiconductor laser device having two active-layer stripe structures includes an n-InP substrate, an n-InP clad layer, a lower GRIN-SCH layer, an active layer, an upper GRIN-SCH layer, a p-InP clad layer, and a p-InGaAsP contact layer grown in this order, in a side cross section cut along one of the stripe structure. A high-reflection film is disposed on a reflection-side end surface, and a low-reflection film is disposed on an emission-side end surface. A p-side electrode is disposed on only a part of the upper surface of the p-InGaAsP contact layer so that a current non-injection area is formed on an area absent the p-side electrode.

摘要翻译： 具有两个有源层条纹结构的半导体激光器件包括n-InP衬底，n-InP覆盖层，下部GRIN-SCH层，有源层，上部GRIN-SCH层，p-InP覆盖层， 和p-InGaAsP接触层，沿着条纹结构中的一个切割的侧截面中依次生长。 高反射膜设置在反射侧端面上，低反射膜设置在发射侧端面上。 p侧电极仅设置在p-InGaAsP接触层的上表面的一部分上，使得在没有p侧电极的区域上形成电流的非注入区域。

公开(公告)号：US06782028B2

公开(公告)日：2004-08-24

申请号：US10015656

申请日：2001-12-17

申请人： Naoki Tsukiji ,  Junji Yoshida ,  Masaki Funabashi ,  Toshio Kimura ,  Takeshi Aikiyo ,  Takeo Shimizu ,  Toshiro Yamamoto ,  Tomoaki Toratani ,  Hiroshi Matsuura ,  Mieko Konishi ,  Masashi Nakae

发明人： Naoki Tsukiji ,  Junji Yoshida ,  Masaki Funabashi ,  Toshio Kimura ,  Takeshi Aikiyo ,  Takeo Shimizu ,  Toshiro Yamamoto ,  Tomoaki Toratani ,  Hiroshi Matsuura ,  Mieko Konishi ,  Masashi Nakae

IPC分类号： H01S500

CPC分类号： G02B6/4218 ,  B82Y20/00 ,  G02B6/4206 ,  H01S3/094003 ,  H01S3/094073 ,  H01S3/094096 ,  H01S3/09415 ,  H01S3/302 ,  H01S5/005 ,  H01S5/02208 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/02438 ,  H01S5/1039 ,  H01S5/1085 ,  H01S5/1092 ,  H01S5/1203 ,  H01S5/1212 ,  H01S5/1215 ,  H01S5/125 ,  H01S5/146 ,  H01S5/22 ,  H01S5/227 ,  H01S5/3215 ,  H01S5/3409 ,  H01S5/4012 ,  H01S5/4062 ,  H01S5/4087

摘要： A single semiconductor laser device used in a semiconductor laser module of an optical amplifier and having a first light emitting stripe with a diffraction grating and at least one other light emitting stripe with a diffraction grating and which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface.

摘要翻译： 一种用于光放大器的半导体激光器模块中的单个半导体激光器件，其具有带有衍射光栅的第一发光条纹和至少一个具有衍射光栅的其它发光条纹，并分别对准发射第一激光束和 至少一个其他激光束通过一个边缘表面。

公开(公告)号：US06765935B2

公开(公告)日：2004-07-20

申请号：US10015654

申请日：2001-12-17

申请人： Toshio Kimura ,  Masashi Nakae ,  Takeo Shimizu ,  Naoki Tsukiji ,  Junji Yoshida ,  Masaki Funabashi ,  Takeshi Aikiyo ,  Toshiro Yamamoto ,  Tomoaki Toratani ,  Hiroshi Matsuura ,  Mieko Konishi

发明人： Toshio Kimura ,  Masashi Nakae ,  Takeo Shimizu ,  Naoki Tsukiji ,  Junji Yoshida ,  Masaki Funabashi ,  Takeshi Aikiyo ,  Toshiro Yamamoto ,  Tomoaki Toratani ,  Hiroshi Matsuura ,  Mieko Konishi

IPC分类号： A01S313

CPC分类号： H01S5/02248 ,  G02B6/4206 ,  G02B6/4218 ,  H01S3/094003 ,  H01S3/094073 ,  H01S3/094096 ,  H01S3/09415 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/02438 ,  H01S5/1203 ,  H01S5/1212 ,  H01S5/1215 ,  H01S5/146 ,  H01S5/4012 ,  H01S5/4062 ,  H01S5/4068 ,  H01S5/4087

摘要： A semiconductor laser module includes a single semiconductor laser device having a first light emitting stripe and at least one other light emitting stripe which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface. It also includes a first lens positioned so that the first laser beam and the at least one other laser beam emitted from the semiconductor laser device are incident thereon, the first lens configured to separate the first laser beam and the at least one other laser beam. A beam synthesizing member is included and has a first input part on which the first laser beam is incident, at least one other input part on which the at least one other laser beam is incident, and an output part from which the first laser beam emerging from the first input part and the at least one other laser beam emerging from the at least one other input part are multiplexed and emitted as a multiplexed laser beam. An optical fiber is positioned to receive the multiplexed laser beam therein.

摘要翻译： 半导体激光器模块包括具有第一发光条纹和至少一个其它发光条纹的单个半导体激光器装置，其被对准以分别发射第一激光束和至少一个其它激光束通过一个边缘表面。 它还包括第一透镜，其定位成使得第一激光束和从半导体激光器件发射的至少一个其它激光束入射到其上，第一透镜被配置为分离第一激光束和至少一个其它激光束。 包括光束合成部件，并且具有第一激光束入射的第一输入部，入射有至少一个其他激光束的至少一个其他输入部，以及第一激光束从其出射的输出部 从所述第一输入部分和从所述至少一个其他输入部分出射的所述至少一个其它激光束被多路复用并作为多路复用激光束发射。 光纤被定位成在其中接收复用的激光束。

公开(公告)号：US06614822B2

公开(公告)日：2003-09-02

申请号：US09776226

申请日：2001-02-02

申请人： Junji Yoshida ,  Naoki Tsukiji ,  Takeshi Aikiyo ,  Satoshi Koyanagi

发明人： Junji Yoshida ,  Naoki Tsukiji ,  Takeshi Aikiyo ,  Satoshi Koyanagi

IPC分类号： H01S500

CPC分类号： H01S5/146 ,  H01S3/094069 ,  H01S3/302 ,  H01S5/005 ,  H01S5/02284 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/1039 ,  H01S5/227

摘要： A semiconductor laser device and module for use in a dense wavelength division multiplexed optical communications system are shown. The laser device preferably has cavity lengths greater than 1000 &mgr;m, and compressive strain multi-quantum well active layer, and front-facet reflectivity of less than about 4%. Higher optical outputs and longer cavity lengths are achieved. Preferred modules use these laser diodes with external wavelength-selective reflectors that have narrow bandwidths of 3 nm or less, and which include a plurality of longitudinal mode subpeaks within the bandwidth. Relationships between reflectivity value of the front facet and the peak reflectivity of the wavelength-selective reflector for long cavity length laser device are also disclosed, with the relationships providing higher output power along with a stabilized output spectrum.

摘要翻译： 示出了用于密集波分复用光通信系统的半导体激光器件和模块。 激光装置优选具有大于1000μm的空腔长度和压缩应变多量子阱活性层，并且前端反射率小于约4％。 实现更高的光输出和更长的腔长度。 优选的模块将这些激光二极管与具有3nm或更小的窄带宽的外部波长选择性反射器一起使用，并且其包括带宽内的多个纵向模式子峰。 还公开了用于长腔激光器件的前视面的反射率值与波长选择反射器的峰值反射率之间的关系，其中提供更高的输出功率以及稳定的输出光谱。

公开(公告)号：US06870871B2

公开(公告)日：2005-03-22

申请号：US10001057

申请日：2001-10-31

申请人： Junji Yoshida ,  Naoki Tsukiji ,  Takeshi Aikiyo ,  Satoshi Koyanagi

发明人： Junji Yoshida ,  Naoki Tsukiji ,  Takeshi Aikiyo ,  Satoshi Koyanagi

IPC分类号： H01S5/022 ,  H01S5/14 ,  H01S5/00

CPC分类号： H01S5/0287 ,  H01S5/02208 ,  H01S5/02284 ,  H01S5/1039 ,  H01S5/146

摘要： A semiconductor laser device and module for use in a dense wavelength division multiplexed optical communications system are shown. The laser device preferably has cavity lengths greater than 1000 μm, and compressive strain multi-quantum well active layer, and front-facet reflectivity of less than about 4%. Higher optical outputs by longer cavity lengths are achieved. Preferred modules use these laser diodes with external wavelength-selective reflectors that have narrow bandwidths of 3 nm or less, and which include a plurality of longitudinal mode subpeaks within the bandwidth. Relationships between reflectivity value of the front facet and the peak reflectivity of the wavelength-selective reflector for long cavity length laser device are also disclosed, with the relationships providing higher output power along with a stabilized output spectrum.

摘要翻译： 示出了用于密集波分复用光通信系统的半导体激光器件和模块。 激光装置优选具有大于1000μm的空腔长度和压缩应变多量子阱活性层，并且前端反射率小于约4％。 实现了更长的腔体长度的较高的光输出。 优选的模块将这些激光二极管与具有3nm或更小的窄带宽的外部波长选择性反射器一起使用，并且其包括带宽内的多个纵向模式子峰。 还公开了用于长腔激光器件的前视面的反射率值与波长选择反射器的峰值反射率之间的关系，其中提供更高的输出功率以及稳定的输出光谱。

公开(公告)号：US06934311B2

公开(公告)日：2005-08-23

申请号：US10329716

申请日：2002-12-27

申请人： Hiroshi Shimizu ,  Naoki Tsukiji ,  Junji Yoshida ,  Toshio Kimura ,  Yutaka Ohki ,  Kouhei Terada ,  Hidehiro Taniguchi

发明人： Hiroshi Shimizu ,  Naoki Tsukiji ,  Junji Yoshida ,  Toshio Kimura ,  Yutaka Ohki ,  Kouhei Terada ,  Hidehiro Taniguchi

IPC分类号： G02B6/42 ,  G02F1/35 ,  H01S3/094 ,  H01S3/10 ,  H01S3/30 ,  H01S5/022 ,  H01S5/024 ,  H01S5/12 ,  H01S5/34 ,  H04B10/2507 ,  H04B10/29 ,  H04B10/294 ,  H01S3/08 ,  H01S3/098 ,  H01S5/00

CPC分类号： B82Y20/00 ,  G02B6/4206 ,  H01S3/094011 ,  H01S3/302 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02296 ,  H01S5/02415 ,  H01S5/0683 ,  H01S5/1092 ,  H01S5/12 ,  H01S5/146 ,  H01S5/227 ,  H01S5/3408 ,  H01S2301/02

摘要： A semiconductor laser module has a Fabry-Perot type semiconductor laser device, an optical fiber, and first and second lenses. The tip of the optical fiber, on which the laser beam falls, is askew polished. The optical fiber is fixed in such a manner that the axis of the optical fiber makes an angle with respect to an optical axis of the laser beam. Coatings that avoid reflection are formed on the tip of the optical fiber, and on the first and second lenses.

摘要翻译： 半导体激光器模块具有法布里 - 珀罗型半导体激光器件，光纤以及第一和第二透镜。 激光束落在其上的光纤的尖端是倾斜的抛光。 光纤以使得光纤的轴相对于激光束的光轴成一定角度的方式固定。 避免反射的涂层形成在光纤的尖端上，并在第一和第二透镜上。

公开(公告)号：US06845117B2

公开(公告)日：2005-01-18

申请号：US10287037

申请日：2002-11-04

申请人： Tsuyoshi Wakisaka ,  Naoki Tsukiji ,  Junji Yoshida ,  Toshio Kimura ,  Shu Namiki

发明人： Tsuyoshi Wakisaka ,  Naoki Tsukiji ,  Junji Yoshida ,  Toshio Kimura ,  Shu Namiki

IPC分类号： H01S3/067 ,  H01S3/094 ,  H01S3/0941 ,  H01S3/30 ,  H01S5/022 ,  H01S5/0625 ,  H01S5/12 ,  H01S5/40 ,  H01S5/00

CPC分类号： H01S5/12 ,  H01S3/06729 ,  H01S3/094003 ,  H01S3/0941 ,  H01S3/09415 ,  H01S3/302 ,  H01S5/005 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/06256 ,  H01S5/1096 ,  H01S5/1203 ,  H01S5/1215 ,  H01S5/4012 ,  H01S5/4031

摘要： An n-side electrode, an n-substrate, an n-buffer layer, a GRIN-SCH-MQW active layer, a p-spacer, a p-cladding layer, a p-contact layer, and a p-side electrode are laminated one on top another in that order. Above the n-buffer layer, the GRIN-SCH-MQW layer and the p-spacer layer occupy a narrower area than the n-substrate in a direction that is at right angles to the laser emission direction, wherein the remaining area is occupied by a p-blocking layer and an n-blocking layer. Within the p-spacer layer are embedded a first diffraction grating and a second diffraction grating. Between the first and the second diffraction grating and the p-side electrode is provided a current non-injection area.

摘要翻译： n侧电极，n衬底，n缓冲层，GRIN-SCH-MQW有源层，p间隔物，p包层，p接触层和p侧电极是 按顺序叠加在一起。 在n缓冲层上方，GRIN-SCH-MQW层和p间隔层在与激光发射方向成直角的方向上占据比n基板窄的区域，其中剩余区域被 p阻挡层和n阻挡层。 在p间隔层内嵌入第一衍射光栅和第二衍射光栅。 在第一和第二衍射光栅与p侧电极之间设置有电流的非注入区域。

公开(公告)号：US06950452B2

公开(公告)日：2005-09-27

申请号：US10251835

申请日：2002-09-23

申请人： Naoki Tsukiji ,  Junji Yoshida ,  Toshio Kimura ,  Souko Kado

发明人： Naoki Tsukiji ,  Junji Yoshida ,  Toshio Kimura ,  Souko Kado

IPC分类号： G02B6/26 ,  G02B6/42 ,  H01S3/094 ,  H01S3/0941 ,  H01S3/30 ,  H01S5/022 ,  H01S5/12 ,  H04B10/2537 ,  H01S3/13 ,  H01S3/08 ,  H01S3/098 ,  H01S5/00

CPC分类号： H04B10/2537 ,  G02B6/266 ,  G02B6/4201 ,  G02B6/4208 ,  G02B6/4215 ,  G02B6/4269 ,  G02B6/4271 ,  G02B6/4286 ,  H01S3/094011 ,  H01S3/094096 ,  H01S3/09415 ,  H01S3/302 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/02438 ,  H01S5/0683 ,  H01S5/1203 ,  H01S5/1215

摘要： A semiconductor laser module including a semiconductor laser device having an integrated diffraction grating configured to output a multiple mode laser beam in the presence of a driving current, an optical fiber configured to guide the multiple mode laser beam to an output of the laser module, and an optical attenuation device configured to attenuate the multiple mode laser beam by an amount sufficient to provide a predetermined output power from the output of the laser module. The optical attenuation device may be an optical coupling lens offset from an optimum coupling position by an amount sufficient to provide the predetermined output power, or an optical attenuator interrupting the optical fiber and configured to attenuate the multiple mode laser beam by an amount sufficient to provide the predetermined output power. Also, a two fiber Raman amplifier having a super large area (SLA) fiber that provides amplification of the signal based primarily on the forward excitation light can also be used to suppress SBS.

摘要翻译： 一种半导体激光器模块，包括具有集成衍射光栅的半导体激光器件，所述衍射光栅被配置为在存在驱动电流的情况下输出多模激光束;配置为将所述多模激光束引导到所述激光器模块的输出的光纤;以及 光学衰减装置，被配置为使所述多模激光束衰减足以从所述激光模块的输出提供预定输出功率的量。 光学衰减装置可以是从最佳耦合位置偏移足以提供预定输出功率的光耦合透镜，或者中断光纤的光衰减器，并且被配置为将多模激光束衰减足以提供 预定的输出功率。 此外，也可以使用具有超大面积（SLA）光纤的主要基于正向激发光来提供信号放大的双光纤拉曼放大器来抑制SBS。

公开(公告)号：US06798798B2

公开(公告)日：2004-09-28

申请号：US09758963

申请日：2001-01-10

申请人： Junji Yoshida ,  Naoki Tsukiji ,  Toshio Kimura

发明人： Junji Yoshida ,  Naoki Tsukiji ,  Toshio Kimura

IPC分类号： H01S313

CPC分类号： H01S5/0607 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/02438 ,  H01S5/0617 ,  H01S5/062 ,  H01S5/06804 ,  H01S5/1039

摘要： A cavity length is determined on the basis of a relationship of electric drive power to a range of optical output power over 50 mW, for cavity length to be constant as a parameter in a range over 1000 &mgr;m, so that the electric drive power is vicinal to a minimum thereof in correspondence to a desirable optical output power. If the optical output is 360 mW for example, a cavity length of 1500 &mgr;m is determined to be selected.

摘要翻译： 基于电驱动功率与超过50mW的光输出功率的范围的关系来确定腔长度，使得腔长度作为在1000μm以上的范围内的参数保持恒定，使得电驱动功率是连续的 对应于期望的光输出功率的最小值。 例如，如果光输出为360毫瓦，则确定选择1500毫米的空腔长度。