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    SEMICONDUCTOR LASER MODULE AND OPTICAL MODULE
    1.
    发明申请
    SEMICONDUCTOR LASER MODULE AND OPTICAL MODULE 有权
    半导体激光模块和光学模块

    公开(公告)号：US20120027352A1

    公开(公告)日：2012-02-02

    申请号：US13256434

    申请日：2010-03-12

    申请人： Hidehiro Taniguchi ,  Jun Miyokawa

    发明人： Hidehiro Taniguchi ,  Jun Miyokawa

    IPC分类号： G02B6/42

    CPC分类号： H01S5/02284 ,  G02B6/262 ,  G02B6/30 ,  G02B6/423 ,  G02B6/4237 ,  H01L2224/48091 ,  H01S5/02208 ,  H01S5/02276 ,  H01S5/02415 ,  H01S5/02438 ,  H01L2924/00014

    摘要： The present invention provides a semiconductor laser module in which a coupling efficiency does not easily vary even though a displacement amount varies by the effect of welding. The semiconductor laser module comprises: a semiconductor laser element 2 for emitting a laser light whose cross-sectional shape at an emission end face is elliptical; an optical fiber 3 arranged to receive the laser light from the semiconductor laser element 2; a package 4 for housing the semiconductor laser element 2 and the optical fiber 3; a first fastening means 117 for fastening the optical fiber 3 to the package 4; and a second fastening means 7 for fastening the semiconductor laser element 2 to the package 4, wherein the semiconductor laser element 2 and the optical fiber 3 are fastened such that a minor axis of the elliptical shape of the laser light becomes parallel to a line connecting both ends of the optical fiber 3, said both ends being restricted by the first fastening means 117.

    摘要翻译： 本发明提供了一种半导体激光器模块，其中耦合效率即使位移量随着焊接的影响而变化也不容易变化。 半导体激光器模块包括：半导体激光元件2，用于发射其发射端面的横截面形状为椭圆形的激光; 布置成接收来自半导体激光元件2的激光的光纤3; 用于容纳半导体激光元件2和光纤3的封装4; 用于将光纤3紧固到包装4的第一紧固装置117; 以及用于将半导体激光元件2紧固到封装4的第二紧固装置7，其中半导体激光元件2和光纤3被固定成使得激光的椭圆形的短轴变得平行于连接的线 光纤3的两端都被第一紧固装置117限制。

    METHOD OF MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR OPTICAL LASER ELEMENT, AND SEMICONDUCTOR OPTICAL DEVICE
    2.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR OPTICAL LASER ELEMENT, AND SEMICONDUCTOR OPTICAL DEVICE 有权
    制造半导体光学器件的方法，制造半导体光学激光元件的方法和半导体光学器件

    公开(公告)号：US20120114000A1

    公开(公告)日：2012-05-10

    申请号：US13382599

    申请日：2010-06-09

    申请人： Hidehiro Taniguchi

    发明人： Hidehiro Taniguchi

    IPC分类号： H01S5/18 ,  H01L21/02 ,  H01L33/60

    CPC分类号： H01S5/22 ,  H01S5/162 ,  H01S5/2072 ,  H01S5/2077 ,  H01S5/2205

    摘要： A method of manufacturing a semiconductor optical device including a semiconductor layer includes: forming a semiconductor layer; forming a first dielectric film on a first region of a surface of the semiconductor layer; forming a second dielectric film on a second region of the surface of the semiconductor layer, the second dielectric film having a density higher than that of the first dielectric film; and performing a thermal treatment in a predetermined temperature range after the second dielectric film forming, wherein within the temperature range, as the temperature is lowered, a difference increases between a bandgap in the semiconductor layer below the second dielectric film and a bandgap in the semiconductor layer below the first dielectric film due to the thermal treatment.

    摘要翻译： 包括半导体层的半导体光学器件的制造方法包括：形成半导体层; 在所述半导体层的表面的第一区域上形成第一电介质膜; 在所述半导体层的表面的第二区域上形成第二电介质膜，所述第二电介质膜的密度高于所述第一电介质膜的密度; 并且在第二介电膜形成之后的预定温度范围内进行热处理，其中在温度范围内，随着温度降低，在第二介电膜下面的半导体层中的带隙和半导体中的带隙之间的差异增加 由于热处理，在第一介电膜下面的层。

    Manufacturing method of semiconductor device, semiconductor device, communication apparatus, and semiconductor laser
    3.
    发明授权
    Manufacturing method of semiconductor device, semiconductor device, communication apparatus, and semiconductor laser 有权
    半导体器件，半导体器件，通信设备和半导体激光器的制造方法

    公开(公告)号：US08030224B2

    公开(公告)日：2011-10-04

    申请号：US12785240

    申请日：2010-05-21

    申请人： Hidehiro Taniguchi ,  Takeshi Namegaya ,  Etsuji Katayama

    发明人： Hidehiro Taniguchi ,  Takeshi Namegaya ,  Etsuji Katayama

    IPC分类号： H01L21/00

    CPC分类号： H01S5/16 ,  H01L21/02057 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/2068

    摘要： A method of manufacturing a semiconductor device including a semiconductor layer and a dielectric layer deposited on the semiconductor layer, including: forming the semiconductor layer; performing a surface treatment for removing a residual carbon compound, on a surface of the semiconductor layer formed; forming a dielectric film under a depositing condition corresponding to a surface state after the surface treatment, on at least a part of the surface of the semiconductor layer on which the surface treatment has been performed; and changing a crystalline state of at least a partial region of the semiconductor layer by performing a heat treatment on the semiconductor layer on which the dielectric film has been formed.

    摘要翻译： 一种制造半导体器件的方法，该半导体器件包括沉积在半导体层上的半导体层和电介质层，包括：形成半导体层; 在形成的半导体层的表面上进行表面处理以除去残留的碳化合物; 在对所述表面处理后的表面状态对应的沉积条件下，在已经进行了表面处理的半导体层的表面的至少一部分上形成电介质膜; 以及通过在已经形成有电介质膜的半导体层上进行热处理来改变半导体层的至少一部分区域的结晶状态。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, COMMUNICATION APPARATUS, AND SEMICONDUCTOR LASER
    4.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, COMMUNICATION APPARATUS, AND SEMICONDUCTOR LASER 有权
    半导体器件制造方法，半导体器件，通信设备和半导体激光器

    公开(公告)号：US20100232464A1

    公开(公告)日：2010-09-16

    申请号：US12785240

    申请日：2010-05-21

    申请人： Hidehiro TANIGUCHI ,  Takeshi Namegaya ,  Etsuji Katayama

    发明人： Hidehiro TANIGUCHI ,  Takeshi Namegaya ,  Etsuji Katayama

    IPC分类号： H01S5/323 ,  H01L33/00

    CPC分类号： H01S5/16 ,  H01L21/02057 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/2068

    摘要： A method of manufacturing a semiconductor device including a semiconductor layer and a dielectric layer deposited on the semiconductor layer, including: forming the semiconductor layer; performing a surface treatment for removing a residual carbon compound, on a surface of the semiconductor layer formed; forming a dielectric film under a depositing condition corresponding to a surface state after the surface treatment, on at least a part of the surface of the semiconductor layer on which the surface treatment has been performed; and changing a crystalline state of at least a partial region of the semiconductor layer by performing a heat treatment on the semiconductor layer on which the dielectric film has been formed.

    摘要翻译： 一种制造半导体器件的方法，该半导体器件包括沉积在半导体层上的半导体层和电介质层，包括：形成半导体层; 在形成的半导体层的表面上进行表面处理以除去残留的碳化合物; 在对所述表面处理后的表面状态对应的沉积条件下，在已经进行了表面处理的半导体层的表面的至少一部分上形成电介质膜; 以及通过在已经形成有电介质膜的半导体层上进行热处理来改变半导体层的至少一部分区域的结晶状态。

    Semiconductor laser module and optical module
    6.
    发明授权
    Semiconductor laser module and optical module 有权
    半导体激光模块和光模块

    公开(公告)号：US08696217B2

    公开(公告)日：2014-04-15

    申请号：US13256434

    申请日：2010-03-12

    申请人： Hidehiro Taniguchi ,  Jun Miyokawa

    发明人： Hidehiro Taniguchi ,  Jun Miyokawa

    IPC分类号： G02B6/36

    CPC分类号： H01S5/02284 ,  G02B6/262 ,  G02B6/30 ,  G02B6/423 ,  G02B6/4237 ,  H01L2224/48091 ,  H01S5/02208 ,  H01S5/02276 ,  H01S5/02415 ,  H01S5/02438 ,  H01L2924/00014

    摘要： The present invention provides a semiconductor laser module in which a coupling efficiency does not easily vary even though a displacement amount varies by the effect of welding. The semiconductor laser module comprises: a semiconductor laser element 2 for emitting a laser light whose cross-sectional shape at an emission end face is elliptical; an optical fiber 3 arranged to receive the laser light from the semiconductor laser element 2; a package 4 for housing the semiconductor laser element 2 and the optical fiber 3; a first fastening means 117 for fastening the optical fiber 3 to the package 4; and a second fastening means 7 for fastening the semiconductor laser element 2 to the package 4, wherein the semiconductor laser element 2 and the optical fiber 3 are fastened such that a minor axis of the elliptical shape of the laser light becomes parallel to a line connecting both ends of the optical fiber 3, said both ends being restricted by the first fastening means 117.

    摘要翻译： 本发明提供了一种半导体激光器模块，其中耦合效率即使位移量随着焊接的影响而变化也不容易变化。 半导体激光器模块包括：半导体激光元件2，用于发射其发射端面的横截面形状为椭圆形的激光; 布置成接收来自半导体激光元件2的激光的光纤3; 用于容纳半导体激光元件2和光纤3的封装4; 用于将光纤3紧固到包装4的第一紧固装置117; 以及用于将半导体激光元件2紧固到封装4的第二紧固装置7，其中半导体激光元件2和光纤3被固定成使得激光的椭圆形的短轴变得平行于连接的线 光纤3的两端都被第一紧固装置117限制。

    Method of manufacturing semiconductor optical device, method of manufacturing semiconductor optical laser element, and semiconductor optical device
    7.
    发明授权
    Method of manufacturing semiconductor optical device, method of manufacturing semiconductor optical laser element, and semiconductor optical device 有权
    半导体光学元件的制造方法，半导体激光元件的制造方法以及半导体光学元件

    公开(公告)号：US08615026B2

    公开(公告)日：2013-12-24

    申请号：US13382599

    申请日：2010-06-09

    申请人： Hidehiro Taniguchi

    发明人： Hidehiro Taniguchi

    IPC分类号： H01S5/00

    CPC分类号： H01S5/22 ,  H01S5/162 ,  H01S5/2072 ,  H01S5/2077 ,  H01S5/2205

    摘要： A method of manufacturing a semiconductor optical device including a semiconductor layer includes: forming a semiconductor layer; forming a first dielectric film on a first region of a surface of the semiconductor layer; forming a second dielectric film on a second region of the surface of the semiconductor layer, the second dielectric film having a density higher than that of the first dielectric film; and performing a thermal treatment in a predetermined temperature range after the second dielectric film forming, wherein within the temperature range, as the temperature is lowered, a difference increases between a bandgap in the semiconductor layer below the second dielectric film and a bandgap in the semiconductor layer below the first dielectric film due to the thermal treatment.

    摘要翻译： 包括半导体层的半导体光学器件的制造方法包括：形成半导体层; 在所述半导体层的表面的第一区域上形成第一电介质膜; 在所述半导体层的表面的第二区域上形成第二电介质膜，所述第二电介质膜的密度高于所述第一电介质膜的密度; 并且在第二介电膜形成之后的预定温度范围内进行热处理，其中在温度范围内，随着温度降低，在第二介电膜下面的半导体层中的带隙和半导体中的带隙之间的差异增加 由于热处理，在第一介电膜下面的层。

    Semiconductor laser device
    8.
    发明授权
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号：US07653317B2

    公开(公告)日：2010-01-26

    申请号：US11384559

    申请日：2006-03-21

    申请人： Yutaka Ohki ,  Naoki Tsukiji ,  Hidehiro Taniguchi

    发明人： Yutaka Ohki ,  Naoki Tsukiji ,  Hidehiro Taniguchi

    IPC分类号： H04B10/04

    CPC分类号： H01S5/146 ,  H01S5/142

    摘要： A first light feedback element is arranged at an optical distance L1 from a front facet of a semiconductor laser from which an output light is emitted on an optical path of the output light. An i-th light feedback element is arranged at an optical distance Li from the front facet on the optical path of the output light, where i=2 to n, n is a positive integer not less than 2, and Li>L1. L1 and Li satisfies ((M−1)+0.01)

    摘要翻译： 第一光反馈元件布置在距输出光的光路上发射输出光的半导体激光器的前刻面的光学距离L1处。 第i个光反馈元件被布置在输出光的光路上的前面的光学距离Li处，其中i = 2到n，n是不小于2的正整数，Li> L1。 L1和Li满足（（M-1）+0.01）<（Li / L1）<（M-0.01），其中M为不小于2的正整数，满足（M-1）<（Li / = M。