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    Semiconductor laser device and optical fiber amplifier using the same
    3.
    发明授权
    Semiconductor laser device and optical fiber amplifier using the same 有权
    半导体激光器件和光纤放大器使用相同

    公开(公告)号：US07006545B2

    公开(公告)日：2006-02-28

    申请号：US09877952

    申请日：2001-06-08

    申请人： Junji Yoshida ,  Naoki Tsukiji ,  Tsuyoshi Saito ,  Satoshi Irino ,  Ryuichiro Minato

    发明人： Junji Yoshida ,  Naoki Tsukiji ,  Tsuyoshi Saito ,  Satoshi Irino ,  Ryuichiro Minato

    IPC分类号： H01S5/00

    CPC分类号： B82Y20/00 ,  H01S3/067 ,  H01S3/094003 ,  H01S3/09415 ,  H01S5/1039 ,  H01S5/2004 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/343

    摘要： A semiconductor laser device with an active layer having a multi-quantum well structure including more than one well layer and more than one barrier layer and having a cavity length of more than 800 μm is disclosed, wherein the active layer includes a doped region which includes at least one well layer and at least one barrier layer adjacent to the well layer. The entire active region, comprising all of the well and active layers may be doped. Adjacent to the active layer are upper and lower optical confinement layers falls having a thickness within a range of from about 20 to about 50 nm. A optical fiber amplifier incorporating the semiconductor laser is also disclosed, including the semiconductor laser device sealed within a package disposed over a cooler, and wherein a light incidence facet of an optical fiber is optically coupled to the optical output power facet of the semiconductor laser device.

    摘要翻译： 公开了一种半导体激光器件，其具有包括多于一个阱层和多于一个阻挡层并且具有大于800μm的空腔长度的多量子阱结构的有源层，其中所述有源层包括掺杂区域，所述掺杂区域包括 至少一个阱层和与阱层相邻的至少一个势垒层。 可以掺杂包括所有阱和有源层的整个有源区。 与活性层相邻的是上和下光限制层的厚度在约20至约50nm的范围内。 还公开了一种结合了半导体激光器的光纤放大器，包括密封在设置在冷却器上的封装内的半导体激光器件，并且其中光纤的光入射小面光耦合到半导体激光器件的光输出功率面 。

    Method of manufacturing semiconductor element, and semiconductor element manufactured with this method
    7.
    发明授权
    Method of manufacturing semiconductor element, and semiconductor element manufactured with this method 失效
    使用该方法制造半导体元件的方法和半导体元件

    公开(公告)号：US06921677B2

    公开(公告)日：2005-07-26

    申请号：US10014507

    申请日：2001-12-14

    申请人： Naoki Tsukiji ,  Satoshi Irino

    发明人： Naoki Tsukiji ,  Satoshi Irino

    IPC分类号： H01S5/12 ,  H01S5/02 ,  H01S5/028 ,  H01S5/227 ,  H01L21/00

    CPC分类号： H01S5/0201 ,  H01S5/12 ,  H01S5/227

    摘要： When manufacturing semiconductor elements, a group of semiconductor elements having a diffraction grating formed partly on the side of the facet from which laser light is emitted is formed collectively on a semiconductor wafer by using semiconductor process technologies. The semiconductor laser elements are arranged such that the light emitting facets are opposite to each other to thereby form each diffraction grating of the semiconductor laser elements arranged opposite to each other as one diffraction grating, cleaving this diffraction grating at respective cleavage planes to cut out laser bars, followed by the cleavage of cleavage planes to cut out semiconductor laser elements.

    摘要翻译： 当制造半导体元件时，通过使用半导体工艺技术，在半导体晶片上共同地形成具有部分地形成在其上发射激光的刻面侧的衍射光栅的一组半导体元件。 半导体激光元件被布置成使得发光面彼此相对，从而形成作为一个衍射光栅彼此相对布置的半导体激光元件的每个衍射光栅，在相应的解理面处切割该衍射光栅以切割激光 棒，然后切割解理面以切出半导体激光元件。

    Method of manufacturing semiconductor laser element
    8.
    发明授权
    Method of manufacturing semiconductor laser element 有权
    制造半导体激光元件的方法

    公开(公告)号：US06746964B2

    公开(公告)日：2004-06-08

    申请号：US10032580

    申请日：2002-01-02

    申请人： Naoki Tsukiji ,  Satoshi Irino

    发明人： Naoki Tsukiji ,  Satoshi Irino

    IPC分类号： H01L21302

    CPC分类号： G03F7/7045 ,  H01S5/0201 ,  H01S5/1203 ,  H01S5/2275

    摘要： Provided is a method of manufacturing a semiconductor laser element for collectively forming semiconductor laser elements having diffraction grating partially provided at least on the side of laser light emitting end surface or laser light reflection end surface side using a semiconductor process technique. The method comprises the step of performing electron beam exposure or ion beam exposure for drawing only on a diffraction grating region on which said diffraction grating is provided in correspondence with a pattern of said diffraction grating, and masking the diffraction grating region and exposing a region other than said diffraction grating region with light or X-rays.

    摘要翻译： 提供了一种半导体激光元件的制造方法，该半导体激光元件用半导体工艺技术共同形成至少在激光发射端面或激光反射端面侧的一侧部分设置的衍射光栅的半导体激光元件。 该方法包括以下步骤：对与所述衍射光栅的图案相对应地进行电子束曝光或离子束曝光以仅绘制在其上提供所述衍射光栅的衍射光栅区域上，并掩蔽衍射光栅区域并暴露其它区域 比具有光或X射线的所述衍射光栅区域。