公开(公告)号：US20110164641A1

公开(公告)日：2011-07-07

申请号：US12683676

申请日：2010-01-07

申请人： Junji Yoshida ,  Naoki Tsukiji ,  Hidehiro Taniguchi ,  Satoshi Irino ,  Hirokazu Itoh ,  Harunobu Ikeda ,  Masako Kobayakawa ,  Akihiko Kasukawa

发明人： Junji Yoshida ,  Naoki Tsukiji ,  Hidehiro Taniguchi ,  Satoshi Irino ,  Hirokazu Itoh ,  Harunobu Ikeda ,  Masako Kobayakawa ,  Akihiko Kasukawa

IPC分类号： H01S5/34 ,  H01S5/026

CPC分类号： H01L33/60 ,  B82Y20/00 ,  H01L2924/0002 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/02438 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/2275 ,  H01S5/3406 ,  H01S5/3434 ,  H01L2924/00

摘要： A semiconductor device of the invention is formed so that n-type InP current blocking layers enter the inside of p-type InP cladding layers, i.e., the n-type current blocking layers ride over the upper part of the p-type InP cladding layers, so that a distance between the n-type InP current block layers composing a current blocking region is narrower than a width of the p-type cladding layers contacting with the n-type InP current blocking layers. Thereby, the semiconductor device whose leak current in the current blocking region may be reduced which permits high-output and high-temperature operations may be readily fabricated.

摘要翻译： 本发明的半导体器件形成为使n型InP电流阻挡层进入p型InP包覆层的内部，即，n型电流阻挡层越过p型InP包覆层的上部 使得构成电流阻挡区域的n型InP电流阻挡层之间的距离比与n型InP电流阻挡层接触的p型覆层的宽度窄。 因此，可以容易地制造其电流阻挡区域中的漏电流可以减小的半导体器件，其允许高输出和高温操作。

公开(公告)号：US08385379B2

公开(公告)日：2013-02-26

申请号：US12683676

申请日：2010-01-07

申请人： Junji Yoshida ,  Naoki Tsukiji ,  Hidehiro Taniguchi ,  Satoshi Irino ,  Hirokazu Itoh ,  Harunobu Ikeda ,  Masako Kobayakawa ,  Akihiko Kasukawa

发明人： Junji Yoshida ,  Naoki Tsukiji ,  Hidehiro Taniguchi ,  Satoshi Irino ,  Hirokazu Itoh ,  Harunobu Ikeda ,  Masako Kobayakawa ,  Akihiko Kasukawa

IPC分类号： H01S5/00

CPC分类号： H01L33/60 ,  B82Y20/00 ,  H01L2924/0002 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/02438 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/2275 ,  H01S5/3406 ,  H01S5/3434 ,  H01L2924/00

摘要： A semiconductor device of the invention is formed so that n-type InP current blocking layers enter the inside of p-type InP cladding layers, i.e., the n-type current blocking layers ride over the upper part of the p-type InP cladding layers, so that a distance between the n-type InP current block layers composing a current blocking region is narrower than a width of the p-type cladding layers contacting with the n-type InP current blocking layers. Thereby, the semiconductor device whose leak current in the current blocking region may be reduced which permits high-output and high-temperature operations may be readily fabricated.

摘要翻译： 本发明的半导体器件形成为使n型InP电流阻挡层进入p型InP包覆层的内部，即，n型电流阻挡层越过p型InP包覆层的上部 使得构成电流阻挡区域的n型InP电流阻挡层之间的距离比与n型InP电流阻挡层接触的p型覆层的宽度窄。 因此，可以容易地制造其电流阻挡区域中的漏电流可以减小的半导体器件，其允许高输出和高温操作。

公开(公告)号：US06925102B2

公开(公告)日：2005-08-02

申请号：US10259319

申请日：2002-09-30

申请人： Junji Yoshida ,  Naoki Tsukiji ,  Satoshi Irino

发明人： Junji Yoshida ,  Naoki Tsukiji ,  Satoshi Irino

IPC分类号： H01S3/08 ,  H01S3/30 ,  H01S5/00 ,  H01S5/125 ,  H01S5/16

CPC分类号： H01S3/302 ,  H01S3/06754 ,  H01S3/094073 ,  H01S3/094096 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/06258 ,  H01S5/1215 ,  H01S5/125 ,  H01S5/146 ,  H01S5/16 ,  H01S2301/16

摘要： A semiconductor laser device which has a diffraction grating partially provided in the vicinity of an active layer formed between a radiation-side reflection film provided on a radiation-side end surface of a laser beam and a reflection film provided on a reflection-side end surface of the laser beam, and which outputs a laser beam having a desired oscillation longitudinal mode based on a wavelength selection characteristic of at least the diffraction grating. The diffraction grating is formed in isolation with an isolation distance of Ls=15 μm from the radiation-side reflection film.

摘要翻译： 一种半导体激光器件，其具有部分地设置在形成在设置在激光束的辐射侧端面上的辐射侧反射膜之间的有源层附近的衍射光栅和设置在反射侧端面上的反射膜 并且基于至少衍射光栅的波长选择特性输出具有期望的振荡纵向模式的激光束。 孤立地形成衍射光栅，离辐射侧反射膜的距离为Ls =15μm。

公开(公告)号：US06898228B2

公开(公告)日：2005-05-24

申请号：US10291513

申请日：2002-11-12

申请人： Satoshi Irino ,  Naoki Tsukiji ,  Junji Yoshida

发明人： Satoshi Irino ,  Naoki Tsukiji ,  Junji Yoshida

IPC分类号： G02F1/35 ,  G02B6/124 ,  H01S3/30 ,  H01S5/0683 ,  H01S5/125 ,  H01S5/227 ,  H01S5/50 ,  H01S5/00

CPC分类号： G02B6/124 ,  H01S3/06754 ,  H01S3/094011 ,  H01S3/09408 ,  H01S3/094096 ,  H01S3/1301 ,  H01S3/302 ,  H01S5/0064 ,  H01S5/02208 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/0287 ,  H01S5/0683 ,  H01S5/1039 ,  H01S5/1096 ,  H01S5/1209 ,  H01S5/1215 ,  H01S5/1218 ,  H01S5/125 ,  H01S5/227

摘要： A diffraction grating is provided in the vicinity of a GRIN-SCH-MQW active layer formed between a radiation side reflection coating provided on a radiation end face of a laser beam and a reflection coating provided on a reflection end face of the laser beam, and on the radiation side reflection coating side. An n-InP layer which covers the upper part of the diffraction grating is also provided, so that the current from the p-side electrode is prevented from being injected to the vicinity of the diffraction grating by the n-InP layer. An n-InPGaAsP diffusion prevention layer forms a non-current injection area so as to suppress alloying with the p-side electrode.

摘要翻译： 衍射光栅设置在形成在设置在激光束的辐射端面上的辐射侧反射涂层和设置在激光束的反射端面上的反射涂层之间的GRIN-SCH-MQW有源层附近，以及 在辐射侧反射涂层侧。 还提供了覆盖衍射光栅上部的n-InP层，从而防止来自p侧电极的电流被n-InP层注入到衍射光栅附近。 n-InPGaAsP扩散防止层形成非电流注入区域，以抑制与p侧电极的合金化。

公开(公告)号：US07006545B2

公开(公告)日：2006-02-28

申请号：US09877952

申请日：2001-06-08

申请人： Junji Yoshida ,  Naoki Tsukiji ,  Tsuyoshi Saito ,  Satoshi Irino ,  Ryuichiro Minato

发明人： Junji Yoshida ,  Naoki Tsukiji ,  Tsuyoshi Saito ,  Satoshi Irino ,  Ryuichiro Minato

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S3/067 ,  H01S3/094003 ,  H01S3/09415 ,  H01S5/1039 ,  H01S5/2004 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/343

摘要： A semiconductor laser device with an active layer having a multi-quantum well structure including more than one well layer and more than one barrier layer and having a cavity length of more than 800 μm is disclosed, wherein the active layer includes a doped region which includes at least one well layer and at least one barrier layer adjacent to the well layer. The entire active region, comprising all of the well and active layers may be doped. Adjacent to the active layer are upper and lower optical confinement layers falls having a thickness within a range of from about 20 to about 50 nm. A optical fiber amplifier incorporating the semiconductor laser is also disclosed, including the semiconductor laser device sealed within a package disposed over a cooler, and wherein a light incidence facet of an optical fiber is optically coupled to the optical output power facet of the semiconductor laser device.

摘要翻译： 公开了一种半导体激光器件，其具有包括多于一个阱层和多于一个阻挡层并且具有大于800μm的空腔长度的多量子阱结构的有源层，其中所述有源层包括掺杂区域，所述掺杂区域包括 至少一个阱层和与阱层相邻的至少一个势垒层。 可以掺杂包括所有阱和有源层的整个有源区。 与活性层相邻的是上和下光限制层的厚度在约20至约50nm的范围内。 还公开了一种结合了半导体激光器的光纤放大器，包括密封在设置在冷却器上的封装内的半导体激光器件，并且其中光纤的光入射小面光耦合到半导体激光器件的光输出功率面 。

公开(公告)号：US20050018727A1

公开(公告)日：2005-01-27

申请号：US10259319

申请日：2002-09-30

申请人： Junji Yoshida ,  Naoki Tsukiji ,  Satoshi Irino

发明人： Junji Yoshida ,  Naoki Tsukiji ,  Satoshi Irino

IPC分类号： H01S3/08 ,  H01S3/30 ,  H01S5/00 ,  H01S5/125 ,  H01S5/16

CPC分类号： H01S3/302 ,  H01S3/06754 ,  H01S3/094073 ,  H01S3/094096 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/06258 ,  H01S5/1215 ,  H01S5/125 ,  H01S5/146 ,  H01S5/16 ,  H01S2301/16

摘要： A semiconductor laser device which has a diffraction grating partially provided in the vicinity of an active layer formed between a radiation-side reflection film provided on a radiation-side end surface of a laser beam and a reflection film provided on a reflection-side end surface of the laser beam, and which outputs a laser beam having a desired oscillation longitudinal mode based on a wavelength selection characteristic of at least the diffraction grating. The diffraction grating is formed in isolation with an isolation distance of Ls=15 μm from the radiation-side reflection film.

摘要翻译： 一种半导体激光器件，其具有部分地设置在形成在设置在激光束的辐射侧端面上的辐射侧反射膜之间的有源层附近的衍射光栅和设置在反射侧端面上的反射膜 并且基于至少衍射光栅的波长选择特性输出具有期望的振荡纵向模式的激光束。 孤立地形成衍射光栅，离辐射侧反射膜的距离为Ls =15μm。

公开(公告)号：US06934311B2

公开(公告)日：2005-08-23

申请号：US10329716

申请日：2002-12-27

申请人： Hiroshi Shimizu ,  Naoki Tsukiji ,  Junji Yoshida ,  Toshio Kimura ,  Yutaka Ohki ,  Kouhei Terada ,  Hidehiro Taniguchi

发明人： Hiroshi Shimizu ,  Naoki Tsukiji ,  Junji Yoshida ,  Toshio Kimura ,  Yutaka Ohki ,  Kouhei Terada ,  Hidehiro Taniguchi

IPC分类号： G02B6/42 ,  G02F1/35 ,  H01S3/094 ,  H01S3/10 ,  H01S3/30 ,  H01S5/022 ,  H01S5/024 ,  H01S5/12 ,  H01S5/34 ,  H04B10/2507 ,  H04B10/29 ,  H04B10/294 ,  H01S3/08 ,  H01S3/098 ,  H01S5/00

CPC分类号： B82Y20/00 ,  G02B6/4206 ,  H01S3/094011 ,  H01S3/302 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02296 ,  H01S5/02415 ,  H01S5/0683 ,  H01S5/1092 ,  H01S5/12 ,  H01S5/146 ,  H01S5/227 ,  H01S5/3408 ,  H01S2301/02

摘要： A semiconductor laser module has a Fabry-Perot type semiconductor laser device, an optical fiber, and first and second lenses. The tip of the optical fiber, on which the laser beam falls, is askew polished. The optical fiber is fixed in such a manner that the axis of the optical fiber makes an angle with respect to an optical axis of the laser beam. Coatings that avoid reflection are formed on the tip of the optical fiber, and on the first and second lenses.

摘要翻译： 半导体激光器模块具有法布里 - 珀罗型半导体激光器件，光纤以及第一和第二透镜。 激光束落在其上的光纤的尖端是倾斜的抛光。 光纤以使得光纤的轴相对于激光束的光轴成一定角度的方式固定。 避免反射的涂层形成在光纤的尖端上，并在第一和第二透镜上。

公开(公告)号：US20070291273A1

公开(公告)日：2007-12-20

申请号：US11806486

申请日：2007-05-31

申请人： Noriyuki Yokouchi ,  Junji Yoshida ,  Takahisa Harayama ,  Takehiro Fukushima ,  Akihiko Kasukawa ,  Shuichi Tamura ,  Keizou Inagaki ,  Morito Matsuoka

发明人： Noriyuki Yokouchi ,  Junji Yoshida ,  Takahisa Harayama ,  Takehiro Fukushima ,  Akihiko Kasukawa ,  Shuichi Tamura ,  Keizou Inagaki ,  Morito Matsuoka

IPC分类号： G01C19/66

CPC分类号： G01C19/66

摘要： A laser gyro of the present invention includes laser light excitation means (a semiconductor laser device 100) that excites first and second laser lights propagating in the opposite directions to each other in a circular ring-shaped path (an optical path 40), coupling means (optical waveguides 41 and 42) for superimposing the first and the second laser lights, and a photodetector for observing an interference signal generated by the superimposed first and second laser lights.

摘要翻译： 本发明的激光陀螺仪包括：激光激发装置（半导体激光装置100），其激励在圆形环状路径（光路40）中以相反的方向传播的第一和第二激光，耦合装置 （光波导41和42），用于重叠第一和第二激光;以及光电检测器，用于观察由叠加的第一和第二激光产生的干涉信号。

公开(公告)号：US07564563B2

公开(公告)日：2009-07-21

申请号：US11806486

申请日：2007-05-31

申请人： Noriyuki Yokouchi ,  Junji Yoshida ,  Takahisa Harayama ,  Takehiro Fukushima ,  Akihiko Kasukawa ,  Shuichi Tamura ,  Keizou Inagaki ,  Morito Matsuoka

发明人： Noriyuki Yokouchi ,  Junji Yoshida ,  Takahisa Harayama ,  Takehiro Fukushima ,  Akihiko Kasukawa ,  Shuichi Tamura ,  Keizou Inagaki ,  Morito Matsuoka

IPC分类号： G01C19/72

CPC分类号： G01C19/66

摘要： A laser gyro of the present invention includes laser light excitation means (a semiconductor laser device 100) that excites first and second laser lights propagating in the opposite directions to each other in a circular ring-shaped path (an optical path 40), coupling means (optical waveguides 41 and 42) for superimposing the first and the second laser lights, and a photodetector for observing an interference signal generated by the superimposed first and second laser lights.

摘要翻译： 本发明的激光陀螺仪包括：激光激发装置（半导体激光装置100），其激励在圆形环状路径（光路40）中以相反的方向传播的第一和第二激光，耦合装置 （光波导41和42），用于重叠第一和第二激光;以及光电检测器，用于观察由叠加的第一和第二激光产生的干涉信号。

公开(公告)号：US07072373B2

公开(公告)日：2006-07-04

申请号：US10626104

申请日：2003-07-23

申请人： Michio Ohkubo ,  Yoshikazu Ikegami ,  Takeshi Namegaya ,  Akihiko Kasukawa ,  Junji Yoshida

发明人： Michio Ohkubo ,  Yoshikazu Ikegami ,  Takeshi Namegaya ,  Akihiko Kasukawa ,  Junji Yoshida

IPC分类号： H01S5/00

CPC分类号： H01S5/22 ,  H01S2301/18

摘要： A GaAs based semiconductor laser having a combination of cladding layers including a ridge structure part, and a remaining part which overlays the active layers of the laser, and an etch stop layer sandwiched between the ridge structure part and the remaining part. The remaining part preferably overlies the entire surface of laser active layers and has a thickness “D” which satisfies 1.1×W>D≧0.5×W wherein W is the width of a spot size having a strength of 1/e2 as measured at the laser front facet in a direction perpendicular to the active layers, wherein “e” is the base of the natural logarithm. The semiconductor laser solves the kink phenomenon to obtain an excellent linear relationship between the optical output power and the injected current.

摘要翻译： 一种GaAs基半导体激光器，其具有包括脊结构部分的包覆层和覆盖激光器的有源层的剩余部分和夹在脊部结构部分和其余部分之间的蚀刻停止层的组合。 其余部分优选地覆盖在激光有源层的整个表面上，并且具有满足1.1×W> D> = 0.5×W的厚度“D”，其中W是强度为1 / e 2的光点尺寸的宽度， / SUP>，在垂直于有源层的方向上在激光器前刻面处测量，其中“e”是自然对数的基数。 半导体激光器解决了扭结现象，以获得光输出功率和注入电流之间的良好的线性关系。