公开(公告)号：US20090111216A1

公开(公告)日：2009-04-30

申请号：US12257570

申请日：2008-10-24

申请人： Jurgen Weichart ,  Stanislav Kadlec

发明人： Jurgen Weichart ,  Stanislav Kadlec

IPC分类号： H01L21/3205 ,  H01L21/02 ,  C25B9/00

CPC分类号： H01L21/76898 ,  C23C14/046 ,  C23C14/345 ,  H01J37/32027 ,  H01J37/32091 ,  H01J37/3408 ,  H01J37/3467 ,  H01L21/2855

摘要： A method of magnetically enhanced sputtering an electrically-conductive material onto interior surfaces of a trench described herein includes providing a magnetic field adjacent to a target formed at least in part from the electrically-conductive material, and applying a DC voltage between an anode and the target as a plurality of pulses. A high-frequency signal is applied to the pedestal supporting the semiconductor substrate to generate a self-bias field adjacent to the semiconductor substrate. The high-frequency signal is applied to the pedestal in pulses, during periods of time that overlap with the periods during which the DC voltage pulses are applied. The periods of time that the high-frequency signals are applied include a duration that extends beyond termination of the DC voltage pulse applied between the anode and the target. During each DC voltage pulse the electrically-conductive material is sputter deposited onto the side walls of the trench formed in the semiconductor substrate.

摘要翻译： 将导电材料磁性增强溅射到本文所述的沟槽的内表面上的方法包括提供与至少部分地从导电材料形成的靶相邻的磁场，以及在阳极和 目标为多个脉冲。 将高频信号施加到支撑半导体衬底的基座，以产生与半导体衬底相邻的自偏置场。 在与施加直流电压脉冲的周期重叠的时间段期间，高频信号以脉冲方式施加到基座。 施加高频信号的时间段包括延伸超过在阳极和目标之间施加的DC电压脉冲的终止的持续时间。 在每个DC电压脉冲期间，导电材料被溅射沉积到形成在半导体衬底中的沟槽的侧壁上。

公开(公告)号：US20090134011A1

公开(公告)日：2009-05-28

申请号：US11968300

申请日：2008-01-02

申请人： Hartmut Rohrmann ,  Hanspeter Friedli ,  Jurgen Weichart ,  Stanislav Kadlec ,  Martin Dubs

发明人： Hartmut Rohrmann ,  Hanspeter Friedli ,  Jurgen Weichart ,  Stanislav Kadlec ,  Martin Dubs

IPC分类号： C23C14/34

CPC分类号： C23C14/34 ,  G11B5/851 ,  H01J37/34 ,  H01J37/3447

摘要： For producing a directional layer for instance with constant nominal directionality, such as a low-retentivity layer with a preferred direction of magnetization or a support layer for such a layer by cathode sputtering on a substrate surface (4), the coating process takes place in a manner whereby particles emanating from a target surface (6) impinge predominantly from directions at which their projection onto the substrate surface (4) lies within a preferred angular range surrounding the nominal direction. This is achieved for instance by positioning a collimator (8), encompassing plates (9) that extend at a normal angle to the substrate surface (4) parallel to the nominal direction in front of the substrate surface (4), but in lieu of or in addition to such positioning the location or movement of the substrate surface (4) relative to the target surface (6) can also be suitably adjusted or controlled.

摘要翻译： 为了产生例如具有恒定标称方向性的定向层，例如具有优选磁化方向的低保持层或用于通过阴极溅射在衬底表面（4）上的这种层的支撑层，涂覆过程发生在 从目标表面（6）发出的颗粒主要从其在衬底表面（4）上的投影位于围绕标称方向的优选角度范围内的方向入射的方式。 这例如通过定位准直器（8）来实现，该准直器（8）围绕与基板表面（4）平行于基板表面（4）的标称方向的法向角度延伸的板（9），但代替 或者除了这样的定位之外，还可以适当地调整或控制衬底表面（4）相对于目标表面（6）的位置或移动。

公开(公告)号：US20080135400A1

公开(公告)日：2008-06-12

申请号：US11954507

申请日：2007-12-12

申请人： Stanislav Kadlec ,  Jurgen Weichart

发明人： Stanislav Kadlec ,  Jurgen Weichart

IPC分类号： C23C14/35

CPC分类号： C23C14/3485 ,  C23C14/35 ,  H01J37/32944 ,  H01J37/3408 ,  H01J37/3444 ,  H01J37/3467

摘要： An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. The apparatus also includes an inductance operably connected to the at least one capacitor. A first switch and a second switch are also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. The second switch is operably connected to discharge the magnetron. The second switch is configured to discharge the magnetron according to a second pulse.

摘要翻译： 提供了一种用于产生靶的溅射以在基底上产生涂层的装置。 该装置包括包括阴极和阳极的磁控管。 电源可操作地连接到磁控管，并且至少一个电容器可操作地连接到电源。 该装置还包括可操作地连接到至少一个电容器的电感。 还提供第一开关和第二开关。 第一开关可操作地将电源连接到磁控管以对磁控管充电，并且第一开关被配置为根据第一脉冲对磁控管充电。 第二开关可操作地连接以放电磁控管。 第二开关被配置为根据第二脉冲放电磁控管。

公开(公告)号：US08475634B2

公开(公告)日：2013-07-02

申请号：US12257570

申请日：2008-10-24

申请人： Jurgen Weichart ,  Stanislav Kadlec

发明人： Jurgen Weichart ,  Stanislav Kadlec

IPC分类号： C23C14/34

CPC分类号： H01L21/76898 ,  C23C14/046 ,  C23C14/345 ,  H01J37/32027 ,  H01J37/32091 ,  H01J37/3408 ,  H01J37/3467 ,  H01L21/2855

摘要： A method of magnetically enhanced sputtering an electrically-conductive material onto interior surfaces of a trench described herein includes providing a magnetic field adjacent to a target formed at least in part from the electrically-conductive material, and applying a DC voltage between an anode and the target as a plurality of pulses. A high-frequency signal is applied to the pedestal supporting the semiconductor substrate to generate a self-bias field adjacent to the semiconductor substrate. The high-frequency signal is applied to the pedestal in pulses, during periods of time that overlap with the periods during which the DC voltage pulses are applied. The periods of time that the high-frequency signals are applied include a duration that extends beyond termination of the DC voltage pulse applied between the anode and the target. During each DC voltage pulse the electrically-conductive material is sputter deposited onto the side walls of the trench formed in the semiconductor substrate.

摘要翻译： 将导电材料磁性增强溅射到本文所述的沟槽的内表面上的方法包括提供与至少部分地从导电材料形成的靶相邻的磁场，以及在阳极和 目标为多个脉冲。 将高频信号施加到支撑半导体衬底的基座，以产生与半导体衬底相邻的自偏置场。 在与施加直流电压脉冲的周期重叠的时间段期间，高频信号以脉冲方式施加到基座。 施加高频信号的时间段包括延伸超过在阳极和目标之间施加的DC电压脉冲的终止的持续时间。 在每个DC电压脉冲期间，导电材料被溅射沉积到形成在半导体衬底中的沟槽的侧壁上。

公开(公告)号：US20080135401A1

公开(公告)日：2008-06-12

申请号：US11954490

申请日：2007-12-12

申请人： Stanislav Kadlec ,  Jurgen Weichart

发明人： Stanislav Kadlec ,  Jurgen Weichart

IPC分类号： C23C14/35

CPC分类号： C23C14/3485 ,  C23C14/35 ,  H01J37/32944 ,  H01J37/3408 ,  H01J37/3444 ,  H01J37/3467

摘要： An apparatus for generating sputtering of a target to produce a coating on a substrate with a current density on a cathode of a magnetron between 0.1 and 10 A/cm2 is provided. The apparatus comprises a power supply that is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.

摘要翻译： 提供了一种用于产生靶的溅射的装置，以在0.1至10A / cm 2之间的磁控管的阴极上以电流密度在基板上产生涂层。 该装置包括可操作地连接到磁控管的电源，并且至少一个电容器可操作地连接到电源。 还提供第一开关。 第一开关可操作地将电源连接到磁控管以对磁控管充电，并且第一开关被配置为根据第一脉冲对磁控管充电。 电偏置装置可操作地连接到衬底并且被配置为施加衬底偏置。

公开(公告)号：US09611537B2

公开(公告)日：2017-04-04

申请号：US13032922

申请日：2011-02-23

申请人： Stanislav Kadlec ,  Jürgen Weichart

发明人： Stanislav Kadlec ,  Jürgen Weichart

IPC分类号： C23C14/00 ,  C23C14/34

CPC分类号： C23C14/3407 ,  H01J37/3405 ,  H01J37/3423

摘要： A target for a physical vapor deposition system includes a top, a bottom, and a base. The base essentially is defined by the surface of the target to be sputtered. A first, inner ring and a second, outer ring extend from the base. Each ring has an inner side and an outer side, wherein sputtering is concentrated on the outer sides by means of a magnet arrangement adjacent to the target.

公开(公告)号：US20120279851A1

公开(公告)日：2012-11-08

申请号：US13551815

申请日：2012-07-18

申请人： Stanislav Kadlec ,  Frantisek Balon ,  Juergen Weichart ,  Bart Scholte van Mast

发明人： Stanislav Kadlec ,  Frantisek Balon ,  Juergen Weichart ,  Bart Scholte van Mast

IPC分类号： C23C14/35 ,  C23C14/54

CPC分类号： H01J37/3408 ,  H01J37/3455

摘要： A method of magnetron sputtering, comprises rotating a magnet of a magnetron with an angular frequency ω, and, during sputtering of material from a source of the magnetron onto a substrate, periodically modulating a power level applied to the source with at least a component comprising a frequency f which is a harmonic of the angular frequency ω of rotation of the magnet other than the first harmonic.

摘要翻译： 一种磁控溅射方法，包括以角频率ω旋转磁控管的磁体，并且在将材料从磁控管的源溅射到衬底上时，周期性地调制施加到源的功率电平，其中至少包括 频率f是除了一次谐波之外的磁体的旋转角频率ω的谐波。

公开(公告)号：US20070084715A1

公开(公告)日：2007-04-19

申请号：US11539218

申请日：2006-10-06

申请人： Stanislav Kadlec ,  Eduard Kugler ,  Thomas Halter

发明人： Stanislav Kadlec ,  Eduard Kugler ,  Thomas Halter

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： H01J37/3455 ,  C23C14/3407 ,  C23C14/35 ,  C23C14/542 ,  C23C16/50 ,  C23C16/52

摘要： Method for producing a substrate includes establishing a plasma discharge with a locally inhomogeneous density distribution and exposing the substrate to the inhomogeneously density-distributed plasma discharge. The distribution is established by establishing a specified relative movement of the inhomogeneous density distribution and of the substrate and establishing a specified time variation of an electric power signal supplying the discharge and/or of an optionally provided further electric signal which connects the substrate to bias voltage. When the electric power signal or further electric signal is an AC signal, the specified time variation of the signal addresses its modulation and the method includes setting the variation and the movement.

摘要翻译： 制造衬底的方法包括建立具有局部不均匀密度分布的等离子体放电，并将衬底暴露于非均匀密度分布的等离子体放电。 通过建立不均匀密度分布和衬底的指定相对运动并建立提供放电的电功率信号和/或可选地提供的进一步电信号的规定时间变化来建立分布，所述另外的电信号将衬底连接到偏置电压 。 当电力信号或其他电信号是AC信号时，信号的指定时间变化解决其调制，并且该方法包括设置变化和移动。

公开(公告)号：US20050199485A1

公开(公告)日：2005-09-15

申请号：US10798331

申请日：2004-03-12

申请人： Stanislav Kadlec ,  Eduard Kugler ,  Walter Haag

发明人： Stanislav Kadlec ,  Eduard Kugler ,  Walter Haag

IPC分类号： H01J37/34 ,  C23C14/35

CPC分类号： H01J37/3408

摘要： A magnetron source, a magnetron treatment chamber, and a method of manufacturing substrates with a vacuum plasma treated surface, generate and exploit on asymmetrically unbalanced long-range magnetron magnetic field pattern which is swept along the substrate surface for improving the ion density at a substrate surface being vacuum plasma treated. The long-range field reaches the substrate surface with a component of the magnetic field parallel to the substrate surface of at least 0.1, and preferably between 1 and 20, Gauss. The plasma treating can be sputter-coating, or etching, for example.

摘要翻译： 磁控管源，磁控管处理室和利用真空等离子体处理表面制造衬底的方法，产生并利用沿着衬底表面扫过的非对称不平衡长程磁控管磁场图案，以改善衬底处的离子密度 表面为真空等离子体处理。 长距离场到达衬底表面，其中平均于衬底表面的磁场的分量至少为0.1，优选为1至20，高斯。 等离子体处理可以是例如溅射涂覆或蚀刻。

公开(公告)号：US06860977B2

公开(公告)日：2005-03-01

申请号：US10703217

申请日：2003-11-06

申请人： Bernd Heinz ,  Martin Dubs ,  Thomas Eisenhammer ,  Pius Grunenfelder ,  Walter Haag ,  Stanislav Kadlec ,  Siegfried Krassnitzer

发明人： Bernd Heinz ,  Martin Dubs ,  Thomas Eisenhammer ,  Pius Grunenfelder ,  Walter Haag ,  Stanislav Kadlec ,  Siegfried Krassnitzer

IPC分类号： C23C14/35 ,  G11B7/26 ,  H01J37/34

CPC分类号： H01J37/3408

摘要： A workpiece is manufactured using a magnetron source that has an optimized yield of sputtered-off material as well as service life of the target. Good distribution values of the layer on the workpiece are obtained that are stable over the entire target service life, and a concave sputter face in a configuration with small target-to-workpiece distance is combined with a magnet system to form the magnetron electron trap in which the outer pole of the magnetron electron trap is stationary and an eccentrically disposed inner pole with a second outer pole part is rotatable about the central source axis.

摘要翻译： 使用具有优化的溅射材料产量以及靶的使用寿命的磁控管源来制造工件。 获得在整个目标使用寿命上稳定的工件上的良好的分布值，并且具有小的目标到工件距离的构造中的凹形溅射面与磁体系统组合以形成磁控管电子阱 其中磁控管电子阱的外极是静止的，并且具有第二外极部分的偏心设置的内极可以围绕中心源轴线旋转。