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公开(公告)号：US11946975B2
公开(公告)日：2024-04-02
申请号：US17445684
申请日：2021-08-23
IPC分类号： G01R31/382 , A61B5/245 , G01N27/90
CPC分类号： G01R31/382 , G01N27/9006 , A61B5/245
摘要： According to one embodiment, a magnetic sensor includes a first sensor part. The first sensor part includes a first magnetic member, a first counter magnetic member, and a first magnetic element. A direction from the first magnetic member toward the first counter magnetic member is along a first direction. The first magnetic element includes one or a plurality of first extension parts. The first extension part includes a first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer. The first magnetic layer includes a first portion, a first counter portion, and a first middle portion. A direction from the first portion toward the first counter portion is along the first direction. The first middle portion is between the first portion and the first counter portion. The first nonmagnetic layer is between the first counter magnetic layer and at least a portion of the first middle portion.
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公开(公告)号：US11747303B2
公开(公告)日：2023-09-05
申请号：US17395183
申请日：2021-08-05
IPC分类号： G01N27/90 , G01N33/2045
CPC分类号： G01N27/9006 , G01N33/2045
摘要： According to one embodiment of the invention, a magnetic sensor includes a first sensor part. The first sensor part includes a first magnetic member, a first counter magnetic member, and a first magnetic element. A direction from the first magnetic member to the first counter magnetic member is along a first direction. The first magnetic element includes one or a plurality of first extending portions. A first portion of the first extending portion overlaps the first magnetic member in a second direction crossing the first direction. A first counter portion of the first extending portion overlaps the first counter magnetic member in the second direction. A first direction length along the first direction of the first extending portion is longer than a third direction length along a third direction of the first extending portion. The third direction crosses a plane including the first direction and the second direction.
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公开(公告)号：US11237230B1
公开(公告)日：2022-02-01
申请号：US17169388
申请日：2021-02-05
摘要： According to one embodiment, a magnetic sensor includes a sensor part, a first circuit, and a second circuit. The sensor part includes a magnetic element part, first and second conductive members. The magnetic element part includes first to fourth magnetic elements. The first conductive member includes first to third conductive portions, and first and second middle portions. The second conductive member includes fourth to sixth conductive portions, and third and fourth middle portions. The first circuit is electrically connected to the third and sixth conductive portions. The first circuit is configured to supply a first current between the third and sixth conductive portions. The second circuit is electrically connected to a first connection point and a second connection point. The second circuit is electrically connected to first and second connection points. The second circuit is configured to supply a second current between the first and second connection points.
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公开(公告)号：US10468354B2
公开(公告)日：2019-11-05
申请号：US15908212
申请日：2018-02-28
IPC分类号： H01L23/552 , H01L43/02 , H01L43/08 , G11B5/39 , H01L23/31 , H01L23/00 , H01L23/498
摘要： According to one embodiment, a semiconductor device includes a semiconductor element, and a first member. The first member includes a first nonmagnetic planar region separated from the semiconductor element in a first direction, a first magnetic planar region provided between the first nonmagnetic planar region and the semiconductor element in the first direction, and a second nonmagnetic planar region provided between the first magnetic planar region and the semiconductor element in the first direction. The first magnetic planar region includes a first end portion extending along a second direction crossing the first direction. A first magnetization direction of the first magnetic planar region is tilted with respect to the second direction.
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公开(公告)号：US09810711B2
公开(公告)日：2017-11-07
申请号：US14460450
申请日：2014-08-15
发明人： Hideaki Fukuzawa , Michiko Hara , Yoshihiko Fuji , Yoshihiro Higashi , Shiori Kaji , Akio Hori , Tomohiko Nagata , Akiko Yuzawa , Akira Kikitsu
IPC分类号： G01P15/08 , G01P15/105
CPC分类号： G01P15/105 , G01P15/0802 , G01P2015/0805
摘要： An inertial sensor includes a base portion, a weight portion, a connection portion, and a first sensing element unit. The connection portion connects the weight portion and the base portion and is capable of being deformed in accordance with a change in relative position of the weight portion with respect to the position of the base portion. The first sensing element unit is provided on a first portion of the connection portion and includes a first magnetic layer, a second magnetic layer, and a nonmagnetic first intermediate layer. The nonmagnetic first intermediate layer is provided between the first magnetic layer and the second magnetic layer.
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公开(公告)号：US08976579B2
公开(公告)日：2015-03-10
申请号：US13757981
申请日：2013-02-04
CPC分类号： G11C11/161 , G11C11/14 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0808 , G11C21/00
摘要： According to one embodiment, a magnetic memory element includes: a magnetic wire, a stress application unit, and a recording/reproducing unit. The magnetic wire includes a plurality of domain walls and a plurality of magnetic domains separated by the domain walls. The magnetic wire is a closed loop. The stress application unit is configured to cause the domain walls to circle around along the closed loop a plurality of times by applying stress to the magnetic wire. The recording/reproducing unit is configured to write memory information by changing magnetizations of the circling magnetic domains as the domain walls circle around and to read the written memory information by detecting the magnetizations of the circling magnetic domains.
摘要翻译： 根据一个实施例，磁存储元件包括：磁线，应力施加单元和记录/再现单元。 磁线包括多个畴壁和由畴壁隔开的多个磁畴。 磁线是闭环。 应力施加单元被配置为通过向磁线施加应力使畴壁沿着闭合环多圈。 记录/再现单元被配置为通过随着畴壁围绕而改变环绕磁畴的磁化来写入存储器信息，并且通过检测循环磁畴的磁化来读取写入的存储器信息。
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7.发明申请公开(公告)号：US20140139952A1
公开(公告)日：2014-05-22
申请号：US13946938
申请日：2013-07-19
发明人： Akihiko Takeo , Akira Kikitsu , Tomoyuki Maeda , Migaku Takahashi , Shin Saito , Ken Inoue , Gohei Kurokawa
CPC分类号： G11B5/1278 , G11B5/235 , G11B5/3146 , G11B5/656 , G11B5/732 , G11B5/7325 , G11B2005/0024 , H01F10/30 , H01F10/3286 , H01F10/329 , H01F41/30 , H03B15/006 , H03B28/00
摘要： According to one embodiment, there is provided a thin magnetic film having a negative anisotropy of −6×106 erg/cm3 or less and including, on at least a nonmagnetic substrate, at least one seed layer made of a metal or metal compound, a ruthenium underlayer for controlling the orientation of an immediately overlying layer, and a magnetic layer having negative anisotropy in the normal line direction perpendicular to a surface of the magnetic layer and mainly containing Co and Ir, wherein the additive element concentration of Ir in the magnetic layer is 10 (inclusive) to 45 (inclusive) at %.
摘要翻译： 根据一个实施方案，提供了一种具有-6×106erg / cm 3或更小的负各向异性的薄磁膜，并且在至少一个非磁性基底上至少包括由金属或金属化合物制成的至少一个晶种层， 钌底层，用于控制直接上覆层的取向，以及在与磁性层的表面垂直的法线方向上具有负各向异性的磁性层，主要含有Co和Ir，其中磁性层中的添加元素浓度 为10（含）至45（含）％。
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公开(公告)号：US11703530B2
公开(公告)日：2023-07-18
申请号：US17672097
申请日：2022-02-15
CPC分类号： G01R27/02 , G01R25/00 , G01R31/382 , G01R17/105 , G01R27/08 , G01R27/14
摘要： According to one embodiment, a sensor includes an element part, and a control circuit part. The element part includes first and second elements. Each of the first and second elements includes a first magnetic element and a first conductive member. The control circuit part includes a first current circuit, a differential circuit, and a phase detection circuit. The first current circuit is configured to supply a first current to the first conductive member. The differential circuit is configured to output a differential signal corresponding to a difference of a first signal and a second signal. The first signal corresponds to a change in a first electrical resistance of the first magnetic element of the first element. The second signal corresponds to a change in a second electrical resistance of the first magnetic element of the second element. The phase detection circuit is configured to perform a phase detection of the differential signal.
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公开(公告)号：US11011475B2
公开(公告)日：2021-05-18
申请号：US16564008
申请日：2019-09-09
IPC分类号： H01L23/552 , H01L43/02
摘要： According to one embodiment, an electromagnetic wave attenuator includes a multilayer member, and a magnetic member. The multilayer member includes a plurality of magnetic layers and a plurality of nonmagnetic layers. The plurality of nonmagnetic layers is conductive. A direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers is aligned with a first direction from the multilayer member toward the magnetic member. One of the plurality of nonmagnetic layers is between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers. A thickness along the first direction of the magnetic member is not less than ½ of a thickness along the first direction of the multilayer member.
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公开(公告)号：US10849527B2
公开(公告)日：2020-12-01
申请号：US15698372
申请日：2017-09-07
摘要： According to one embodiment, a magnetic sensor includes a first sensor element and a first interconnect. The first sensor element includes a first magnetic layer, a first opposing magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the first opposing magnetic layer. A first magnetization of the first magnetic layer is aligned with a first length direction crossing a first stacking direction from the first magnetic layer toward the first opposing magnetic layer. At least a portion of the first interconnect extends along the first length direction. The first interconnect cross direction crosses the first length direction and is from the first sensor element toward the portion of the first interconnect. A first electrical resistance of the first sensor element changes according to an alternating current flowing in the first interconnect and a sensed magnetic field applied to the first sensor element.
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