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公开(公告)号：US10110185B2
公开(公告)日：2018-10-23
申请号：US15600094
申请日：2017-05-19
发明人： Kazutaka Takagi
摘要： A microwave semiconductor device of an embodiment includes a package, a semiconductor amplifying element, an output matching circuit, and a smoothing circuit. The package includes a metal base plate, a frame body bonded to a surface of the metal base plate, an input feedthrough part, and an output feedthrough part. The semiconductor amplifying element has an output electrode. The output matching circuit includes an output matching capacitor, and a first bonding wire connected to the output matching capacitor and the output electrode. The smoothing circuit includes a smoothing capacitor, and a second bonding wire. The smoothing capacitor is connected by the second bonding wire to a position in the output matching circuit at which capacitive reactance component of a load impedance seen from the output matching capacitor is smaller than inductive reactance component of the load impedance seen from the output electrode of the semiconductor amplifying element.
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2.发明授权公开(公告)号：US09590562B2
公开(公告)日：2017-03-07
申请号：US14817583
申请日：2015-08-04
发明人： Kazutaka Takagi
CPC分类号： H03F1/0205 , H03F1/56 , H03F1/565 , H03F3/193 , H03F2200/222 , H03F2200/387 , H03F2200/555
摘要： A semiconductor amplifier bias circuit includes a first transmission line, a first grounded capacitor, a second transmission line and a power supply terminal. The first transmission line is connected to an output end part of the output matching circuit and the external load. The second transmission line includes one end part connected to the first transmission line and the other end part connected to the first grounded shunt capacitor. An electrical length of the second transmission line is approximately 90° at a center frequency of a band. The one end part is connected to the first transmission line at a position apart from the output end part by an electrical length of approximately 45° at the center frequency. The power supply terminal is connected to a connection point of the first grounded shunt capacitor and the other end part of the second transmission line.
摘要翻译： 半导体放大器偏置电路包括第一传输线，第一接地电容，第二传输线和电源端。 第一传输线连接到输出匹配电路的输出端部分和外部负载。 第二传输线包括连接到第一传输线的一个端部和连接到第一接地分流电容器的另一端部分。 在频带的中心频率处，第二传输线的电长度约为90度。 一端部在与输出端部隔开的距离为中心频率大约45°的电气长度的位置处连接到第一传输线。 电源端子连接到第一接地分流电容器和第二传输线路的另一端的连接点。
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公开(公告)号：US09159789B2
公开(公告)日：2015-10-13
申请号：US14063390
申请日：2013-10-25
发明人： Kazutaka Takagi
IPC分类号： H01L29/06 , H01L29/417 , H01L29/778 , H01L29/20 , H01L23/66 , H01L23/00
CPC分类号： H01L29/0696 , H01L23/66 , H01L24/06 , H01L24/48 , H01L24/49 , H01L29/2003 , H01L29/41758 , H01L29/7786 , H01L2223/6611 , H01L2223/6655 , H01L2224/04042 , H01L2224/06165 , H01L2224/48227 , H01L2224/49175 , H01L2924/00014 , H01L2924/10272 , H01L2924/1033 , H01L2924/12032 , H01L2924/1306 , H01L2924/13064 , H01L2924/19107 , H01L2924/30107 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： An field effect transistor has a plurality of cells provided on a first straight line. Each cell has a plurality of multi-finger electrodes and is connected to a gate terminal electrode and a drain terminal electrode. The multi-finger electrode has at least two finger gate electrodes, a finger drain electrode, and a finger source electrode. The gate terminal electrode connects the finger gate electrodes of two adjoining cells in common. The drain terminal electrode connects the finger drain electrodes of two adjoining cells in common. The finger gate electrode of one cell of two adjoining cells and the finger gate electrode of another cell of the two adjoining cells cross perpendicularly. The gate terminal electrode and the drain terminal electrode are provided alternately in a region where the finger gate electrodes of the two adjoining cells cross.
摘要翻译： 场效应晶体管具有设置在第一直线上的多个单元。 每个单元具有多个多指电极，并连接到栅极端子电极和漏极端子电极。 多指电极具有至少两个手指栅极电极，指状漏电极和指状电极电极。 栅极端子电极共同连接两个相邻单元的指状栅电极。 漏极端子电极共同连接两个相邻电池的指状漏电极。 两个相邻单元的一个单元的指状栅电极和两个相邻单元的另一个单元的指状栅电极垂直交叉。 栅极端子电极和漏极端子电极交替地设置在两个相邻单元的指状栅电极交叉的区域中。
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公开(公告)号：US09041190B2
公开(公告)日：2015-05-26
申请号：US14200284
申请日：2014-03-07
发明人： Kazutaka Takagi
IPC分类号： H01L23/12 , H01L23/495 , H01L23/10 , H01L23/047
CPC分类号： H01L23/49582 , H01L23/047 , H01L23/10 , H01L2224/48091 , H01L2924/16195 , H01L2924/19107 , H01L2924/00014
摘要： A semiconductor package, wherein, in bonding of members constituting the semiconductor package, by using bonding layers containing 98 wt % or more of one metallic element such as silver having a melting point of 400° C. or higher, the bonding is performed in a temperature range where the occurrence of warpage or distortion of the members is suppressed, and after the bonding, a high melting point is obtained; and by configuring the members so that all the surfaces of the members which become bonding surfaces of bonding layers are parallel to each other, all the thickness directions of the bonding layers are aligned to be in the same direction, and during the formation of the bonding layers, the pressing direction is set to be one-way direction which is the direction of laminating the members.
摘要翻译： 一种半导体封装，其中，通过使用含有98重量％以上的一种金属元素如熔点为400℃以上的银的金属元素的接合层，在构成半导体封装的构件的接合中，在 抑制部件发生翘曲或变形的温度范围，接合后得到高熔点; 并且通过配置这些部件，使得成为接合层的接合面的部件的所有表面彼此平行，接合层的所有厚度方向都被排列成相同的方向，并且在形成接合期间 按压方向被设定为作为层叠构件的方向的单向方向。
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公开(公告)号：US10116266B2
公开(公告)日：2018-10-30
申请号：US15438252
申请日：2017-02-21
发明人： Kazutaka Takagi , Naotaka Tomita
摘要： A Doherty amplifier of an embodiment includes an input terminal, an output terminal a splitter, a combiner, a carrier amplifier, a peak amplifier. The splitter is connected to the input terminal, the splitter having first and second outputs. The combiner is connected to the output terminal, the combiner having first and second inputs. The carrier amplifier includes a first input-side two-port network connected to the first output of the splitter, a first amplifier connected to an output of the first input-side two-port network, and a first output-side two-port network connected between an output of the first amplifier and the first input of the combiner. The peak amplifier includes a second input-side two-port network connected to the second output of the splitter, a second amplifier connected to the output of the second input-side two-port network, and a second output-side two-port network connected between an output of the second amplifier and the second input of the combiner. The combiner is a parallel-connected load type having a parallel connection of the output-side two-port network of the carrier amplifier and the output-side two-port network of the peak amplifier for the output terminal at a combining point. The load admittance at the combining point is expressed using a complex number.
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公开(公告)号：US09985584B2
公开(公告)日：2018-05-29
申请号：US15007945
申请日：2016-01-27
发明人： Kazutaka Takagi , Yukio Takahashi
IPC分类号： H01P5/02 , H03F1/02 , H03F1/56 , H03F3/217 , H03F3/19 , H01L23/66 , H03F3/60 , H01P1/24 , H01P1/28
CPC分类号： H03F1/0205 , H01L23/66 , H01L2223/6611 , H01L2223/6633 , H01L2223/6655 , H01L2224/49175 , H01L2924/0002 , H01P1/24 , H01P1/28 , H01P5/028 , H03F1/56 , H03F3/19 , H03F3/217 , H03F3/60 , H03F2200/451 , H01L2924/00
摘要： According to one embodiment, a high-frequency semiconductor amplifier includes an input terminal, an input matching circuit, a high-frequency semiconductor amplifying element, an output matching circuit and an output terminal. The input terminal is inputted with a fundamental signal. The fundamental signal has a first frequency band and a first center frequency in the first frequency band. The input matching circuit includes an input end and an output end. The input end of the input matching circuit is connected to the input terminal. The high-frequency semiconductor amplifying element includes an input end and an output end. The input end of the high-frequency semiconductor amplifying element is connected to the output end of the input matching circuit. The high-frequency semiconductor amplifying element is configured to amplify the fundamental signal.
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公开(公告)号：US09748904B2
公开(公告)日：2017-08-29
申请号：US14974433
申请日：2015-12-18
发明人： Kazutaka Takagi , Naotaka Tomita
CPC分类号： H03F1/0288 , H03F1/086 , H03F3/195 , H03F3/604 , H03F2200/153 , H03F2200/451
摘要： A high frequency signal amplifying circuitry of an embodiment includes a first splitter, a first amplifier, a second amplifier, a loop oscillation suppressor, and a combiner. The first amplifier includes a second splitter, a first carrier amplifier, a first peak amplifier, and a first combiner. The second amplifier includes a third splitter, a second carrier amplifier, a second peak amplifier, and a second combiner. The second carrier amplifier being adjacent to an associated the first carrier amplifier or the second peak amplifier being adjacent to an associated the first peak amplifier. The loop oscillation suppressor located between the second carrier amplifier and the associated first carrier amplifier or the second peak amplifier and the associated first peak amplifier.
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公开(公告)号：US09536843B2
公开(公告)日：2017-01-03
申请号：US14458390
申请日：2014-08-13
发明人： Kazutaka Takagi
CPC分类号： H01L23/66 , H01L2224/48091 , H01L2924/0002 , H01L2924/16153 , H01P5/107 , H01L2924/00 , H01L2924/00014
摘要： According to one embodiment, a semiconductor package includes: a first metal body on which a part of a waveguide structure is formed; a second metal body including a mounting area for a semiconductor device and disposed on the first metal body; a line substrate on which a signal transmission line configured to communicate a waveguide with the semiconductor device mounted on the mounting area is formed; and a lid body disposed at a position facing the first metal body, interposing the second metal body and the line substrate. The lid body is made of resin, on which a structure corresponding to another waveguide structure on an extension of the waveguide structure in the first metal body is formed. The structure includes a metal-coated inner wall surface.
摘要翻译： 根据一个实施例，半导体封装包括：第一金属体，其上形成有波导结构的一部分; 第二金属体，包括用于半导体器件的安装区域并设置在第一金属体上; 其上形成有用于将波导与安装在安装区域上的半导体器件连接的信号传输线的线基板; 以及设置在面向所述第一金属体的位置处的盖体，插入所述第二金属体和所述线基板。 盖体由树脂制成，在其上形成与第一金属体中的波导结构的延伸部上的另一波导结构相对应的结构。 该结构包括金属涂覆的内壁表面。
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公开(公告)号：US09401681B2
公开(公告)日：2016-07-26
申请号：US14801227
申请日：2015-07-16
发明人： Kazutaka Takagi
CPC分类号： H03F1/301 , H03F1/565 , H03F3/193 , H03F3/195 , H03F2200/12 , H03F2200/222 , H03F2200/387 , H03F2200/423 , H03F2200/451
摘要： A semiconductor amplifier includes a semiconductor amplifying element, an output terminal, an output matching circuit, and an output bias circuit. The output matching circuit includes a bonding wire, a first transmission line, and a second transmission line. The other end part of the first transmission line is connected to one end part of the second transmission line. The output bias circuit includes a third transmission line having an electrical length of approximately 90° at a center frequency, a grounded shunt capacitor, and a power supply terminal. The third transmission line includes one end part and the other end part connected to the grounded shunt capacitor. The one end part of the third transmission line is connected to the second transmission line at a position where an electrical length is approximately 45° from the one end part of the second transmission line at the center frequency.
摘要翻译： 半导体放大器包括半导体放大元件，输出端子，输出匹配电路和输出偏置电路。 输出匹配电路包括接合线，第一传输线和第二传输线。 第一传输线的另一端连接到第二传输线的一端。 输出偏置电路包括在中心频率处具有大约90°的电气长度的第三传输线，接地并联电容器和电源端子。 第三传输线包括一个端部，另一端连接到接地分流电容器。 第三传输线的一端与第二传输线在距中心频率的第二传输线的一端大约45度的位置连接。
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公开(公告)号：US09929693B2
公开(公告)日：2018-03-27
申请号：US15008072
申请日：2016-01-27
发明人： Kazutaka Takagi
IPC分类号： H03F1/02 , H03F3/19 , H03F1/56 , H01L23/66 , H03F3/217 , H01P5/02 , H03F3/60 , H01P1/24 , H01P1/28
CPC分类号： H03F1/0205 , H01L23/66 , H01L2223/6611 , H01L2223/6633 , H01L2223/6655 , H01L2224/48091 , H01L2924/0002 , H01P1/24 , H01P1/28 , H01P5/028 , H03F1/56 , H03F3/19 , H03F3/217 , H03F3/60 , H03F2200/451 , H01L2924/00014 , H01L2924/00
摘要： According to one embodiment, a high-frequency semiconductor amplifier includes an input terminal, an input matching circuit, a high-frequency semiconductor amplifying element, an output matching circuit and an output terminal. The input terminal is inputted with a fundamental signal. The fundamental signal has a first frequency band and a first center frequency in the first frequency band. The input matching circuit includes an input end and an output end. The input end of the input matching circuit is connected to the input terminal. The high-frequency semiconductor amplifying element includes an input end and an output end. The input end of the high-frequency semiconductor amplifying element is connected to the output end of the input matching circuit. The high-frequency semiconductor amplifying element is configured to amplify the fundamental signal.
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