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公开(公告)号：US20220299221A1
公开(公告)日：2022-09-22
申请号：US17465139
申请日：2021-09-02
发明人： Akio UI , Yosuke SATO , Shotaro OKA
摘要： A plasma disinfection device of an embodiment includes: an electrical dust collector including a plurality of heat exchange fins, a needle electrode which causes a discharge in a gas flow flowing between the plurality of heat exchange fins, and a direct-current power supply electrically connected to the needle electrode; and a plasma generator including a dielectric provided on each of facing surfaces of the plurality of heat exchange fins, a discharge electrode provided to be exposed on a surface of the dielectric and arranged to cross a direction of flow of the gas flow, and an alternating-current power supply electrically connected to the discharge electrode.
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2.发明申请公开(公告)号：US20160196951A1
公开(公告)日：2016-07-07
申请号：US15067832
申请日：2016-03-11
发明人： Yuichi OHSAWA , Akio UI , Junichi ITO , Chikayoshi KAMATA , Megumi YAKABE , Saori KASHIWADA
CPC分类号： H01J37/08 , H01J37/09 , H01J37/20 , H01J37/30 , H01J37/3053 , H01J2237/0822 , H01J2237/083 , H01J2237/3151 , H01L27/228 , H01L43/12
摘要： According to one embodiment, a device manufacturing apparatus includes a substrate holding portion holding a substrate; an ion source including a housing, an anode disposed in the housing, a cathode disposed outside the housing, and a first opening disposed in a portion of the housing such that the anode is exposed to a region between the anode and the substrate holding portion, the ion source configured to generate an ion beam with which the substrate is irradiated; and at least one first structure disposed between the ion source and the substrate holding portion, and having a first through hole through which the ion beam passes. The first structure includes a conductor, and an opening dimension of the first through hole is equal to or larger than an opening dimension of the first opening.
摘要翻译： 根据一个实施例，一种装置制造装置包括：保持基板的基板保持部; 离子源，包括壳体，设置在壳体中的阳极，设置在壳体外部的阴极和设置在壳体的一部分中的第一开口，使得阳极暴露于阳极和衬底保持部分之间的区域， 所述离子源被配置为产生照射所述衬底的离子束; 以及设置在所述离子源和所述基板保持部之间的至少一个第一结构，并且具有离子束通过的第一通孔。 第一结构包括导体，第一通孔的开口尺寸等于或大于第一开口的开口尺寸。
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公开(公告)号：US20150265740A1
公开(公告)日：2015-09-24
申请号：US14633745
申请日：2015-02-27
发明人： Akio UI , Yosuke Sato , Masato Akita , Yasushi Sanada
IPC分类号： A61L9/16
CPC分类号： A61L9/16 , A61L9/22 , A61L2209/212 , B01D53/323 , B01D53/8631 , B01D53/869 , B01D2251/104 , B01D2255/802 , B01D2257/406 , B01D2257/702 , B01D2257/708 , B01D2257/90
摘要： A gas processing apparatus of an embodiment includes: first and second dielectric substrates facing with each other; first and second discharge electrodes respectively disposed on a pair of facing principal surfaces of the dielectric substrates; first and second ground electrodes respectively disposed on a pair of principle surfaces at opposite sides of the principle surfaces of the dielectric substrates; a gas flow path to supply gas to be processed between the discharge electrodes; an AC power source to generate first and second plasma-induced flows by applying an AC voltage between the discharge electrodes and the ground electrodes; and a region disposed between the dielectric substrates at downstream of the plasma-induced flows from the discharge electrodes, and a gap between the dielectric substrates being 1.3 times or less of a sum of thicknesses of the plasma-induced flows.
摘要翻译： 实施例的气体处理装置包括：彼此面对的第一和第二电介质基板; 第一和第二放电电极分别设置在电介质基板的一对相对的主表面上; 第一和第二接地电极分别设置在电介质基板的主表面的相对侧上的一对主表面上; 用于在所述放电电极之间提供待处理气体的气体流路; AC电源，通过在放电电极和接地电极之间施加AC电压来产生第一和第二等离子体感应流; 以及设置在电介质基板之间的等离子体引起的来自放电电极的下游的区域，并且电介质基板之间的间隙是等离子体引起的流的厚度之和的1.3倍以下。
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公开(公告)号：US20220087001A1
公开(公告)日：2022-03-17
申请号：US17186423
申请日：2021-02-26
发明人： Yosuke SATO , Akio UI , Masato AKITA , Shotaro OKA , Tomonao TAKAMATSU , Hiroyuki YASUI , Shinya MATSUDA
IPC分类号： H05H1/24
摘要： A dielectric barrier discharge electrode of an embodiment has: a dielectric; a first electrode provided to be exposed on the dielectric; a second electrode provided to be covered by the dielectric; and a third electrode provided to be covered by the dielectric in a neighborhood of the first electrode.
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公开(公告)号：US20190282722A1
公开(公告)日：2019-09-19
申请号：US16111396
申请日：2018-08-24
发明人： Akio UI , Masato AKITA , Yosuke SATO
IPC分类号： A61L9/22 , B01D53/32 , B01D53/66 , B01D53/82 , B01D53/86 , B01D53/75 , B01D53/34 , B01D53/04 , A61L9/014
摘要： A gas processing apparatus of an embodiment includes a gas processing unit, a flow forming unit, an AC power supply, and first and second filters. The gas processing unit includes a plurality of stacks each having a dielectric substrate, a first to a third electrode. The flow forming unit forms a flow of a target gas flowing toward the gas processing unit. The AC power supply applies an AC voltage across the first, second electrodes and the third electrode so as to generate plasma induced flows of the target gas between the dielectric substrates. The first filter is disposed at an upstream of the gas processing unit, and removes ozone. The second filter is disposed at a downstream of the gas processing unit, and removes ozone.
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公开(公告)号：US20170169996A1
公开(公告)日：2017-06-15
申请号：US15441781
申请日：2017-02-24
IPC分类号： H01J37/32 , H01L21/687 , H01L21/67 , H01L21/683 , H01L21/3065 , H01L21/308
CPC分类号： H01J37/32422 , H01J37/04 , H01J37/32091 , H01J37/3211 , H01J37/32165 , H01J37/3244 , H01J37/32568 , H01J37/32697 , H01J37/32715 , H01J37/32724 , H01J37/32834 , H01J2237/3341 , H01L21/3065 , H01L21/308 , H01L21/67069 , H01L21/6831 , H01L21/68764
摘要： In one embodiment, a plasma processing apparatus includes: a chamber; an introducing part; a counter electrode; a high-frequency power source; and a plurality of low-frequency power sources. A substrate electrode is disposed in the chamber, a substrate is directly or indirectly placed on the substrate electrode, and the substrate electrode has a plurality of electrode element groups. The introducing part introduces process gas into the chamber. The high-frequency power source outputs a high-frequency voltage for ionizing the process gas to generate plasma. The plurality of low-frequency power sources apply a plurality of low-frequency voltages of 20 MHz or less with mutually different phases for introducing ions from the plasma, to each of the plurality of electrode element groups.
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7.发明申请PLASMA INDUCED FLOW ELECTRODE STRUCTURE, PLASMA INDUCED FLOW GENERATION DEVICE, AND METHOD OF MANUFACTURING PLASMA INDUCED FLOW ELECTRODE STRUCTURE 有权等离子体感应流动电极结构，等离子体感应流动生成装置及制造等离子体感应流动电极结构的方法公开(公告)号：US20170018409A1
公开(公告)日：2017-01-19
申请号：US15210115
申请日：2016-07-14
发明人： Masato AKITA , Akio UI , Yasushi SANADA
CPC分类号： H01J37/32541 , A61L2/14 , A61L2/202 , A61L9/015 , A61L9/22 , A61L2202/11 , A61L2202/13 , A61L2209/212 , H01J9/18 , H01J37/32348 , H01J37/32844 , H05H1/2406 , H05H2001/2412 , H05H2001/2418 , H05H2001/2437 , Y02C20/30
摘要： In one embodiment, a plasma induced flow electrode structure has an electrode block, an insulating layer and an electrode layer. The electrode block has first and second surfaces and through holes penetrating between these first and second surfaces. The insulating layer is disposed on the first surface and inside the through holes. The electrode layer is disposed on the insulating layer of the first surface.
摘要翻译： 在一个实施例中，等离子体感应流动电极结构具有电极块，绝缘层和电极层。 电极块具有穿过第一和第二表面之间的第一和第二表面和通孔。 绝缘层设置在第一表面和通孔的内部。 电极层设置在第一表面的绝缘层上。
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公开(公告)号：US20140083977A1
公开(公告)日：2014-03-27
申请号：US14036588
申请日：2013-09-25
IPC分类号： H01J37/04
CPC分类号： H01J37/32422 , H01J37/04 , H01J37/32091 , H01J37/3211 , H01J37/32165 , H01J37/3244 , H01J37/32568 , H01J37/32697 , H01J37/32715 , H01J37/32724 , H01J37/32834 , H01J2237/3341 , H01L21/3065 , H01L21/308 , H01L21/67069 , H01L21/6831 , H01L21/68764
摘要： In one embodiment, a plasma processing apparatus includes: a chamber; an introducing part; a counter electrode; a high-frequency power source; and a plurality of low-frequency power sources. A substrate electrode is disposed in the chamber, a substrate is directly or indirectly placed on the substrate electrode, and the substrate electrode has a plurality of electrode element groups. The introducing part introduces process gas into the chamber. The high-frequency power source outputs a high-frequency voltage for ionizing the process gas to generate plasma. The plurality of low-frequency power sources apply a plurality of low-frequency voltages of 20 MHz or less with mutually different phases for introducing ions from the plasma, to each of the plurality of electrode element groups.
摘要翻译： 在一个实施例中，等离子体处理装置包括：腔室; 引进部分; 对电极 高频电源; 和多个低频电源。 衬底电极设置在腔室中，衬底直接或间接地放置在衬底电极上，并且衬底电极具有多个电极元件组。 引入部分将工艺气体引入腔室。 高频电源输出用于使工艺气体电离以产生等离子体的高频电压。 多个低频电源以相互不同的相位施加多个20MHz以下的低频电压，将等离子体的离子引入多个电极元件组。
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公开(公告)号：US20180078950A1
公开(公告)日：2018-03-22
申请号：US15440981
申请日：2017-02-23
发明人： Yosuke SATO , Akio UI
CPC分类号： B03C3/47 , B03C3/017 , B03C3/08 , B03C3/12 , B03C3/155 , B03C3/368 , B03C3/41 , B03C3/64 , B03C2201/06 , B03C2201/10 , F24F3/166 , F24F2003/1682
摘要： A dust collector in an embodiment includes: a discharge electrode having tips; a counter electrode including a plurality of conductor plates each having an end opposed to the discharge electrode and arrange side by side in a plate thickness direction; and a power supply that applies voltage between the discharge electrode and the counter electrode. The counter electrode has a first region closer to the tips and a second region farther from the tips than is the first region, and at least one of an interval between or a distance from the tips or a shape of at least part of the ends in the first region is different from the interval, the distance, or the shape in the second region.
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公开(公告)号：US20170186589A1
公开(公告)日：2017-06-29
申请号：US15461630
申请日：2017-03-17
发明人： Yosuke SATO , Akio UI , Hisataka HAYASHI
IPC分类号： H01J37/32 , H01L21/3065
CPC分类号： H01J37/32577 , C23C16/50 , H01J37/32009 , H01J37/32091 , H01J37/32422 , H01J37/3244 , H01J37/32706 , H01J37/32715 , H01J2237/20214 , H01J2237/3341 , H01L21/3065
摘要： A plasma processing apparatus of an embodiment includes a chamber, an introducing part, a substrate electrode, a high-frequency power source, a low-frequency power source, and a switching mechanism. The introducing part introduces a process gas into the chamber. The substrate electrode is disposed in the chamber, a substrate is directly or indirectly mounted on the substrate electrode, and the substrate electrode includes a first and a second electrode elements alternately arranged. The high-frequency power source outputs a high-frequency voltage of 40 MHz or more for ionizing the process gas to generate plasma. The low-frequency power source outputs a low-frequency voltage of 20 MHz or less for introducing ions from the plasma. The switching mechanism applies the low-frequency voltage alternately to the first and the second electrode elements.
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