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    TOUCH DETECTING SYSTEM
    1.
    发明申请
    TOUCH DETECTING SYSTEM 审中-公开
    触摸检测系统

    公开(公告)号：US20120146951A1

    公开(公告)日：2012-06-14

    申请号：US13154452

    申请日：2011-06-07

    申请人： KUAN-HONG HSIEH ,  HAN-CHE WANG ,  RUEY-SHYANG YOU ,  BIN-GANG DUAN ,  GANG LI

    发明人： KUAN-HONG HSIEH ,  HAN-CHE WANG ,  RUEY-SHYANG YOU ,  BIN-GANG DUAN ,  GANG LI

    IPC分类号： G06F3/042

    CPC分类号： G06F3/0421

    摘要： A touch detecting system for installation on a touch panel includes two point light sources arranged along one side of a touch panel, an optical sensor disposed at an opposite second side of the touch panel, at least one optical lens, and a processing unit. The at least on optical lens is disposed between the second side of the touch panel and the optical sensor. The at least one optical lens is spaced from the touch panel and the optical sensor, for directing the light from the point light sources to the optical sensor. The optical sensor captures an image which including two dark points of the light from the point light sources when a touch object is on the touch panel. The processing unit determines the position of the touch object on the touch panel based on positions of the dark points in the image.

    摘要翻译： 用于安装在触摸面板上的触摸检测系统包括沿着触摸面板的一侧布置的两点光源，设置在触摸面板的相对的第二侧的光学传感器，至少一个光学透镜和处理单元。 所述至少一个光学透镜设置在所述触摸面板的第二面和所述光学传感器之间。 至少一个光学透镜与触摸面板和光学传感器间隔开，用于将来自点光源的光引导到光学传感器。 当触摸对象在触摸面板上时，光学传感器捕获包括来自点光源的光的两个暗点的图像。 处理单元基于图像中的暗点的位置确定触摸面板上的触摸对象的位置。

    Chemical Vapor Deposition Reactor and Method
    2.
    发明申请
    Chemical Vapor Deposition Reactor and Method 有权
    化学气相沉积反应器和方法

    公开(公告)号：US20100047450A1

    公开(公告)日：2010-02-25

    申请号：US12494260

    申请日：2009-06-29

    申请人： GANG LI

    发明人： GANG LI

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45504 ,  C23C16/4412 ,  C23C16/45508 ,  C23C16/45574 ,  C23C16/4558 ,  C30B25/14 ,  C30B29/403

    摘要： A reactor and method for performing chemical vapor deposition are disclosed. A chemical vapor deposition reactor can have a cylindrical chamber that comprises a cylindrical lid support and an annular gas distribution plate. Said chamber can be configured to have a horizontal laminar flow of at least one gas stream in the radial direction and a vertical downward flow of another gas stream over wafers. A large capacity of a CVD reactor with simple structures, easy maintenance and low consumption of reactants can be achieved. High uniformity, repeatability, reproducibility and consistency of depositing layers on wafers can be obtained.

    摘要翻译： 公开了一种用于进行化学气相沉积的反应器和方法。 化学气相沉积反应器可以具有包括圆柱形盖支撑件和环形气体分配板的圆柱形腔室。 所述室可以被配置为具有在径向上的至少一种气流的水平层流和在晶片上的另一气流的垂直向下流动。 可以实现大容量的CVD反应器，其结构简单，维护方便，反应物消耗低。 可以获得在晶片上沉积层的高均匀性，重复性，再现性和一致性。

    Method of Load Balance Based on BS Architecture
    3.
    发明申请
    Method of Load Balance Based on BS Architecture 审中-公开
    基于BS架构的负载均衡方法

    公开(公告)号：US20110113131A1

    公开(公告)日：2011-05-12

    申请号：US12942994

    申请日：2010-11-09

    申请人： YIJING DUANMU ,  GANG LI ,  GUOXIANG LIU ,  YOUGENG ZHANG ,  BIN LIANG ,  HUA LI

    发明人： YIJING DUANMU ,  GANG LI ,  GUOXIANG LIU ,  YOUGENG ZHANG ,  BIN LIANG ,  HUA LI

    IPC分类号： G06F15/173

    CPC分类号： H04L67/1002 ,  H04L67/02

    摘要： The invention provides a method of loading balance that is based on BS structure, it includes the following steps: using a 4-layers switch to distribute the application request for the proxy server; using the so-called proxy server to distribute application request for application server; and establishing the corresponding WEBLOGIC clusters in accordance with each application request. This invention provides method of loading balance that is based on BS structure that is rationally configure the connection between 4-layers switch and the proxy layer of proxy server; at the same time, maintains the loading balance of the application server and eliminates the single-spot fault by utilizing the advantages of the WEBLOGIC clusters server communication and the back-up synchronization of the users' calling back.

    摘要翻译： 本发明提供一种基于BS结构的负载均衡的方法，包括以下步骤：使用4层交换机分配代理服务器的应用请求; 使用所谓的代理服务器分发应用服务器的应用请求; 并根据每个应用请求建立相应的WEBLOGIC集群。 本发明提供了基于合理配置四层交换机与代理服务器代理层之间连接的BS结构的负载均衡方法， 同时维护应用服务器的负载平衡，利用WEBLOGIC集群服务器通信的优点和用户回叫的备份同步消除了单点故障。

    STRUCTURE WITH AN INTEGRATED CIRCUIT AND A SILICON CONDENSER MICROPHONE MOUNTED ON A SINGLE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
    4.
    发明申请
    STRUCTURE WITH AN INTEGRATED CIRCUIT AND A SILICON CONDENSER MICROPHONE MOUNTED ON A SINGLE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME 有权
    具有集成电路的结构和在单个基板上安装的硅冷凝器麦克风及其制造方法

    公开(公告)号：US20110038493A1

    公开(公告)日：2011-02-17

    申请号：US12538869

    申请日：2009-08-11

    申请人： GANG LI

    发明人： GANG LI

    IPC分类号： H04R11/04 ,  H01L21/30

    CPC分类号： H04R31/00 ,  H04R1/04 ,  H04R19/005 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49005 ,  Y10T29/4908

    摘要： A structure with an integrated circuit (IC) and a silicon condenser microphone mounted thereon includes a substrate having a first area and a second area. The IC is fabricated on the first area in order to form a conducting layer and an insulation layer. Both the conducting layer and the insulation layer further extend to the second area. The insulation layer is removed under low temperature in order to expose the conducting layer on which the silicon condenser microphone is fabricated. The silicon condenser microphone includes a first film layer, a connecting layer and a second film layer under a condition that the connecting layer connects the first and the second film layers. The first film layer and the second film layer act as two electrodes of a variable capacitance.

    摘要翻译： 安装有集成电路（IC）和硅电容麦克风的结构包括具有第一区域和第二区域的基板。 为了形成导电层和绝缘层，在第一区域上制造IC。 导电层和绝缘层都进一步延伸到第二区域。 在低温下去除绝缘层，以便露出其上制造硅电容麦克风的导电层。 在连接层连接第一和第二膜层的条件下，硅电容传声器包括第一膜层，连接层和第二膜层。 第一膜层和第二膜层用作可变电容的两个电极。