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    Field-effect transistor based on embedded cluster structures and process for its production
    3.
    发明授权
    Field-effect transistor based on embedded cluster structures and process for its production 失效
    基于嵌入式集群结构的场效应晶体管及其生产工艺

    公开(公告)号：US06872625B2

    公开(公告)日：2005-03-29

    申请号：US10280172

    申请日：2002-10-25

    申请人： Oliver G. Schmidt ,  Karl Eberl

    发明人： Oliver G. Schmidt ,  Karl Eberl

    IPC分类号： H01L29/10 ,  H01L29/80 ,  H01L21/336

    CPC分类号： H01L29/802 ,  H01L29/1029 ,  H01L29/1054 ,  H01L29/165 ,  Y10S977/731 ,  Y10S977/936

    摘要： Field-Effect Transistor Based on Embedded Cluster Structures and Process for Its Production In field-effect transistors, semiconductor clusters, which can extend from the source region to the drain region and which can be implemented in two ways, are embedded in one or a plurality of layers. In a first embodiment, the semiconductor material of the adjacent channel region can be strained by the clusters and the effective mass can thus be reduced by altering the energy band structure and the charge carrier mobility can be increased. In a second embodiment, the clusters themselves can be used as a canal region. These two embodiments can also appear in mixed forms. The invention can be applied to the Si material system with SiGe clusters or to the GaAs material system with InGaAs clusters or to other material systems.

    摘要翻译： 基于嵌入式簇结构的场效应晶体管及其制造方法在场效应晶体管中，可以从源极区域延伸到漏极区域并且可以以两种方式实现的半导体簇嵌入一个或多个 的层。 在第一实施例中，相邻沟道区域的半导体材料可以被簇应变，因此可以通过改变能带结构来减小有效质量，并且可以增加电荷载流子迁移率。 在第二实施例中，簇本身可用作运河区域。 这两个实施例也可以以混合形式出现。 本发明可以应用于具有SiGe簇的Si材料体系或者可应用于具有InGaAs簇或其它材料体系的GaAs材料体系。

    PASSIVATION OF A RESONATOR END FACE OF A SEMICONDUCTOR LASER WITH A SEMICONDUCTOR SUPERLATTICE
    4.
    发明申请
    PASSIVATION OF A RESONATOR END FACE OF A SEMICONDUCTOR LASER WITH A SEMICONDUCTOR SUPERLATTICE 审中-公开
    具有半导体超导体的半导体激光器的谐振器端面的钝化

    公开(公告)号：US20100278206A1

    公开(公告)日：2010-11-04

    申请号：US12747222

    申请日：2008-12-11

    申请人： Karl Eberl ,  Nils Kirstaedter

    发明人： Karl Eberl ,  Nils Kirstaedter

    IPC分类号： H01S5/34

    CPC分类号： H01S5/0281 ,  H01S5/0282 ,  H01S5/22

    摘要： The semiconductor laser has a resonator end face (15) and a semiconductor superlattice (16) which is applied to the resonator end face (15). The semiconductor superlattice (16) acts as a passivation layer for the resonator end face (15) and has a number of layers (16.1, 16.2, 16.3, 16.3), the material compositions of which are selected in such a manner that essentially no light is absorbed at the emission wavelength of the semiconductor laser (13), the layer assembly suppresses charge carrier transport from the active layer to the surface of the outermost layer (16.4) and good lattice adaption of the semiconductor superlattice (16) to the semiconductor laser is made possible at the same time.

    摘要翻译： 半导体激光器具有施加到谐振器端面（15）的谐振器端面（15）和半导体超晶格（16）。 半导体超晶格（16）用作谐振器端面（15）的钝化层，并且具有多个层（16.1,16.2,16.3,16.3），其材料组成选择为基本上不发光 在半导体激光器（13）的发射波长处被吸收，层组件抑制从有源层到最外层（16.4）的表面的载流子传输和半导体超晶格（16）对半导体激光器的良好晶格适应 在同一时间成为可能。

    Field-effect transistor based on embedded cluster structures and process for its production
    5.
    发明授权
    Field-effect transistor based on embedded cluster structures and process for its production 失效
    基于嵌入式集群结构的场效应晶体管及其生产工艺

    公开(公告)号：US06498359B2

    公开(公告)日：2002-12-24

    申请号：US09860742

    申请日：2001-05-18

    申请人： Oliver G. Schmidt ,  Karl Eberl

    发明人： Oliver G. Schmidt ,  Karl Eberl

    IPC分类号： H01L310328

    CPC分类号： H01L29/802 ,  H01L29/1029 ,  H01L29/1054 ,  H01L29/165 ,  Y10S977/731 ,  Y10S977/936

    摘要： In field-effect transistors, semiconductor clusters, which can extend from the source region to the drain region and which can be implemented in two ways, are embedded in one or a plurality of layers. In a first embodiment, the semiconductor material of the adjacent channel region can be strained by the clusters and the effective mass can thus be reduced by altering the energy band structure and the charge carrier mobility can be increased. In a second embodiment, the clusters themselves can be used as a canal region. These two embodiments can also appear in mixed forms. The invention can be applied to the Si material system with SiGe clusters or to the GaAs material system with InGaAs clusters or to other material systems.

    摘要翻译： 在场效应晶体管中，可以从源极区延伸到漏极区并且可以以两种方式实现的半导体簇被嵌入在一个或多个层中。 在第一实施例中，相邻沟道区域的半导体材料可以被簇应变，因此可以通过改变能带结构来减小有效质量，并且可以增加电荷载流子迁移率。 在第二实施例中，簇本身可用作运河区域。 这两个实施例也可以以混合形式出现。 本发明可以应用于具有SiGe簇的Si材料体系或者可应用于具有InGaAs簇或其它材料体系的GaAs材料体系。

    Process for preparing vinyl chloride polymers
    7.
    发明授权
    Process for preparing vinyl chloride polymers 失效
    制备氯乙烯聚合物的方法

    公开(公告)号：US4464516A

    公开(公告)日：1984-08-07

    申请号：US445966

    申请日：1982-12-01

    申请人： Karl Eberl ,  Manfred Engelmann ,  Edgar Fischer

    发明人： Karl Eberl ,  Manfred Engelmann ,  Edgar Fischer

    IPC分类号： C08F214/00 ,  C08F2/00 ,  C08F2/16 ,  C08F2/42 ,  C08F14/00 ,  C08F214/06 ,  C08F291/00

    CPC分类号： C08F2/004

    摘要： A process is described for preparing vinyl chloride polymers. The polymerization is carried out in an apparatus the inside walls and internal fitments of which have been coated with a reaction product which forms on reacting certain silanes with inhibitors for free-radical polymerizations and which contain in the molecule at least one aromatic or at least one quinonoid ring and at least one hydrogen atom which is bonded to an oxygen, sulfur or nitrogen atom with subsequent reaction with water, drying and heat treatment.The wall-deposit formation observed with the new process is markedly smaller, in particular after several polymerization batches, than in the case of known processes.

    摘要翻译： 描述了制备氯乙烯聚合物的方法。 聚合在设备中进行，其内壁和内部装置已经涂覆有反应产物，反应产物在某些硅烷上与形成自由基聚合的抑制剂形成，并且在分子中含有至少一个芳族或至少一个 醌型环和至少一个与氧，硫或氮原子键合的氢原子，随后与水反应，干燥和热处理。 与已知方法相比，用新方法观察到的壁沉积形成显着较小，特别是在几次聚合批次之后。

    Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates
    8.
    发明授权
    Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates 失效
    半导体元件，特别是光电探测器，发光二极管，光调制器和具有在硅衬底上生长的多层结构的波导

    公开(公告)号：US06403975B1

    公开(公告)日：2002-06-11

    申请号：US08835445

    申请日：1997-04-08

    申请人： Karl Brunner ,  Karl Eberl

    发明人： Karl Brunner ,  Karl Eberl

    IPC分类号： H01L2906

    CPC分类号： H01L33/34 ,  B82Y20/00 ,  G02F1/017 ,  H01L29/155 ,  H01L31/035254 ,  H01L33/06

    摘要： A semiconductor component, selected from the group comprising a photodetector, a light emitting diode, an optical modulator and a waveguide. The semiconductor component comprises an Si substrate, an active region formed on said substrate, and an Si capping layer on said active region. In one embodiment the active region is a superlattice comprising alternating layers of Si1-yCy and Si1-x-yGexCy, with the atomic fraction y of the Si1-x-yGexCy layers being equal to or different from the atomic fraction y of the Si1-yCy layers. In another embodiment it is a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si1-yCy and Si1-xGex layers. In a third embodiment it is a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si1-yCy and Si1-x-yGexCy layers, with the atomic fraction y of the Si1-x-yGexCy layers being equal to or different from the atomic fraction y of the Si1-yCy layers. The components have faborable optical and electrical properties and are suitable for integration on a Si substrate.

    摘要翻译： 选自包括光电检测器，发光二极管，光调制器和波导的组的半导体部件。 半导体部件包括Si衬底，形成在所述衬底上的有源区和所述有源区上的Si覆盖层。 在一个实施例中，有源区是包含Si1-yCy和Si1-x-yGexCy的交替层的超晶格，其中Si1-x-yGexCy层的原子分数y等于或不同于Si1- yCy层。 在另一个实施例中，它是一个超晶格，其包括多个周期的三层结构，包括Si，Si1-yCy和Si1-xGex层。 在第三实施例中，它是一个超晶格，其包括多个周期的三层结构，包括Si，Si1-yCy和Si1-x-yGexCy层，Si1-x-yGexCy层的原子分数y等于或等于 不同于Si1-yCy层的原子分数y。 这些组件具有可发光的光学和电学性能，并且适合于集成在Si衬底上。