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公开(公告)号：US20100225401A1
公开(公告)日：2010-09-09
申请号：US12647688
申请日：2009-12-28
IPC分类号： H03F3/68
CPC分类号： H03F3/245 , H01L23/66 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2223/6644 , H01L2223/6655 , H01L2224/05554 , H01L2224/05599 , H01L2224/48227 , H01L2224/49171 , H01L2224/85399 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01074 , H01L2924/1305 , H01L2924/1306 , H01L2924/13064 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19105 , H01L2924/3011 , H01L2924/30111 , H03F1/56 , H03F3/195 , H03F3/211 , H03F3/68 , H03F2200/204 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/411 , H03F2200/451 , H03F2203/21142 , H01L2224/45099 , H01L2924/00
摘要： The present invention provides a technology capable of achieving an improvement in the characteristic of a power amplifier when a power amplifier mounted onto mobile communication equipment such as a cellular phone is comprised of the balance amplifier. One feature of an embodiment resides in that each of passive parts disposed in a low-band signal negative path and each of passive parts disposed in a low-band signal positive path are placed in positions where they are symmetric with respect to a center line of a semiconductor chip. Thus, the symmetry between the low-band signal negative path and the low-band signal positive path is enhanced. As a result, a loss in matching due to the difference between the low-band signal negative path and the low-band signal positive path can be enough reduced, and the characteristic of a low-band signal balance amplifier can be enhanced.
摘要翻译： 本发明提供了当安装在诸如蜂窝电话的移动通信设备上的功率放大器由平衡放大器组成时能够实现功率放大器的特性的改进的技术。 实施例的一个特征在于，设置在低频带信号负路径中的每个无源部分和布置在低频带信号正路径中的无源部分中的每一个被放置在相对于中心线对称的位置 半导体芯片 因此，增强了低频带信号负路径与低频带信号正路径之间的对称性。 结果，可以充分降低由于低频带信号负路径和低频带信号正路径之间的差异导致的匹配损失，并且可以提高低频带信号平衡放大器的特性。
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公开(公告)号：US20120182086A1
公开(公告)日：2012-07-19
申请号：US13346925
申请日：2012-01-10
IPC分类号： H03H7/38
CPC分类号： H03F1/565 , H03F3/195 , H03F3/211 , H03F3/245 , H03F2203/21103 , H03F2203/21139 , H03H7/38 , H03H7/48
摘要： When a power amplifier mounted in mobile communications equipment, such as a mobile-phone, is composed of a balanced amplifier, technology with which the loss of the electric power composition in a power combiner can be reduced is provided. According to the technical idea of the present embodiment, by dividing an isolation capacitor element into two capacitor elements with high symmetry and coupled in parallel, it is possible to make almost equal parasitic capacitance arising from these capacitor elements, even when the capacitor elements are formed as interlayer capacitor elements of the wiring substrate.
摘要翻译： 当安装在诸如移动电话的移动通信设备中的功率放大器由平衡放大器组成时，提供了可以减少功率组合器中的电力组成的损失的技术。 根据本实施例的技术思想，通过将隔离电容器元件分成两个高对称性并联并联的电容器元件，即使形成电容器元件，也可以使由这些电容器元件产生的几乎相等的寄生电容 作为布线基板的层间电容器元件。
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3.发明申请公开(公告)号：US20100301935A1
公开(公告)日：2010-12-02
申请号：US12732383
申请日：2010-03-26
CPC分类号： H03F1/30 , H03F3/193 , H03F3/245 , H03F3/72 , H03F2200/111 , H03F2200/18 , H03F2200/318 , H03F2200/408 , H03F2203/7209
摘要： To provide a bias circuit for gain control that can reduce gain variation at low-power output, facilitate setting of output power, and is unlikely to be affected by variation in element values and variations among products. Use in an HPA having three bias circuits serially-connected is assumed. Current of the third bias circuit is varied with a square-law characteristic. The square-law characteristic is amplified by a buffer amplifier including a linear amplifier and a peripheral circuit thereof. Output current of the third bias circuit varies depending on a current drivability coefficient of the diode-connected FET branched from the connection point between a constant current source and the linear amplifier. The output current of the third bias circuit is controlled by providing a circuit that draws a certain amount of current from the current flowing in the FET.
摘要翻译： 为了提供增益控制的偏置电路，可以减少低功率输出时的增益变化，便于设置输出功率，并且不太可能受元件值的变化和产品之间的变化的影响。 假设在具有串联连接的三个偏置电路的HPA中使用。 第三偏置电路的电流以平方律特性变化。 平方律特性由包括线性放大器及其外围电路的缓冲放大器放大。 第三偏置电路的输出电流根据从恒定电流源和线性放大器之间的连接点分支的二极管连接的FET的电流驱动系数而变化。 第三偏置电路的输出电流通过提供从流过FET的电流吸取一定量的电流的电路来控制。
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公开(公告)号：US20100194481A1
公开(公告)日：2010-08-05
申请号：US12696376
申请日：2010-01-29
申请人： Masatoshi HASE , Masahiro ITO , Takashi SOGA , Satoshi TANAKA
发明人： Masatoshi HASE , Masahiro ITO , Takashi SOGA , Satoshi TANAKA
IPC分类号： H03F3/68
CPC分类号： H03F3/245 , H03F1/0272 , H03F3/195 , H03F3/68 , H03F2200/105 , H03F2200/108 , H03F2200/204 , H03F2200/222 , H03F2200/387 , H03F2200/408 , H03F2200/414 , H03F2200/417 , H03F2203/45136 , H03G3/3042
摘要： The RF power amplifier circuit including multiple amplification stages has a previous-stage amplifier, a next-stage amplifier and a controller. The previous-stage amplifier responds to an RF transmission input signal. The next-stage amplifier responds to an amplification signal output by the previous-stage amplifier. In response to an output-power-control voltage, the controller controls the former- and next-stage amplifiers in quiescent current and gain. In response to the output-power-control voltage, the quiescent current and gain of the previous-stage amplifier are continuously changed according to a first continuous function, whereas those of the next-stage amplifier are continuously changed according to a second continuous function. The second continuous function is higher than the first continuous function by at least one in degree. The RF power amplifier circuit brings about the effect that the drop of the power added efficiency in low and middle power modes is relieved.
摘要翻译： 包括多个放大级的RF功率放大器电路具有前级放大器，下一级放大器和控制器。 前级放大器响应RF传输输入信号。 下一级放大器响应上一级放大器输出的放大信号。 响应于输出功率控制电压，控制器控制前级和后级放大器的静态电流和增益。 响应于输出功率控制电压，前级放大器的静态电流和增益根据第一连续功能连续地改变，而下一级放大器的静态电流和增益根据第二连续功能连续地改变。 第二连续功能比第一连续功能高至少一个程度。 RF功率放大器电路产生了中低功率模式下功率增加效率下降的效果。
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公开(公告)号：US20120112838A1
公开(公告)日：2012-05-10
申请号：US13345895
申请日：2012-01-09
申请人： Masatoshi HASE , Masahiro ITO , Takashi SOGA , Satoshi TANAKA
发明人： Masatoshi HASE , Masahiro ITO , Takashi SOGA , Satoshi TANAKA
CPC分类号： H03F3/245 , H03F1/0272 , H03F3/195 , H03F3/68 , H03F2200/105 , H03F2200/108 , H03F2200/204 , H03F2200/222 , H03F2200/387 , H03F2200/408 , H03F2200/414 , H03F2200/417 , H03F2203/45136 , H03G3/3042
摘要： The RF power amplifier circuit including multiple amplification stages has a previous-stage amplifier, a next-stage amplifier and a controller. The previous-stage amplifier responds to an RF transmission input signal. The next-stage amplifier responds to an amplification signal output by the previous-stage amplifier. In response to an output-power-control voltage, the controller controls the former- and next-stage amplifiers in quiescent current and gain. In response to the output-power-control voltage, the quiescent current and gain of the previous-stage amplifier are continuously changed according to a first continuous function, whereas those of the next-stage amplifier are continuously changed according to a second continuous function. The second continuous function is higher than the first continuous function by at least one in degree. The RF power amplifier circuit brings about the effect that the drop of the power added efficiency in low and middle power modes is relieved.
摘要翻译： 包括多个放大级的RF功率放大器电路具有前级放大器，下一级放大器和控制器。 前级放大器响应RF传输输入信号。 下一级放大器响应上一级放大器输出的放大信号。 响应于输出功率控制电压，控制器控制前级和后级放大器的静态电流和增益。 响应于输出功率控制电压，前级放大器的静态电流和增益根据第一连续功能连续地改变，而下一级放大器的静态电流和增益根据第二连续功能连续地改变。 第二连续功能比第一连续功能高至少一个程度。 RF功率放大器电路产生了中低功率模式下功率增加效率下降的效果。
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公开(公告)号：US20110210795A1
公开(公告)日：2011-09-01
申请号：US13029184
申请日：2011-02-17
IPC分类号： H03F3/16
CPC分类号： H03F3/45475 , H03F1/0266 , H03F1/301 , H03F1/56 , H03F3/195 , H03F3/245 , H03F2200/222 , H03F2200/27 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/447 , H03F2200/451 , H03F2200/453 , H03F2203/45528 , H03F2203/45594 , H03F2203/45604
摘要： A high-frequency power amplifier which can reduce a variation of power gain due to the dependence on gate length of a power amplification field effect transistor is provided. The high-frequency power amplifier comprises, over a semiconductor chip, a bias control circuit, a bias transistor and an amplification transistor which are coupled so as to configure a current mirror circuit, and a gate length monitor circuit comprising a replicating transistor. The amplification transistor amplifies an RF signal and a bias current of the bias control circuit is supplied to the bias transistor. The transistors are fabricated by the same semiconductor manufacturing process, and have the same variation of gate length. The gate length monitor circuit generates a detection voltage depending on the gate length. According to the detection voltage, the bias control circuit controls the bias current, thereby compensating the gate length dependence of transconductance of the amplification transistor.
摘要翻译： 提供了一种能够减小由于与功率放大场效应晶体管的栅极长度相关的功率增益变化的高频功率放大器。 高频功率放大器包括半导体芯片上的偏置控制电路，偏置晶体管和放大晶体管，这些偏置晶体管和放大晶体管被耦合以配置电流镜电路，以及包括复制晶体管的栅极长度监视电路。 放大晶体管放大RF信号，偏置控制电路的偏置电流被提供给偏置晶体管。 晶体管通过相同的半导体制造工艺制造，并且具有相同的栅极长度变化。 栅极长度监视电路根据栅极长度产生检测电压。 根据检测电压，偏置控制电路控制偏置电流，从而补偿放大晶体管的跨导的栅极长度依赖性。
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