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1.发明授权Methods and apparatus for minimizing excess aluminum accumulation in CVD chambers 失效用于最小化CVD室中过多的铝积聚的方法和装置
公开(公告)号：US5858464A
公开(公告)日：1999-01-12
申请号：US791131
申请日：1997-02-13
申请人： Karl Littau , Dashun S. Zhou , Alfred Mak , Ling Chen
发明人： Karl Littau , Dashun S. Zhou , Alfred Mak , Ling Chen
IPC分类号： C23C16/20 , C23C16/44 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L23/52
CPC分类号： H01L21/28556 , C23C16/4401 , C23C16/4404
摘要： A method and apparatus for minimizing excess aluminum deposition that can build up inside a substrate processing chamber during an aluminum CVD substrate processing operation. The method of the present invention periodically introduces nitrogen into the processing chamber after aluminum CVD processing of at least a single wafer in order to minimize unwanted aluminum accumulation in various parts of the chamber. According to one embodiment, the present invention provides a method of minimizing excess metal deposition inside a substrate processing chamber after a substrate processing operation. The method includes the steps of introducing a nitrogen-containing passivating gas into a chamber after the substrate processing operation, and maintaining at least a portion of the chamber at a second temperature during the introducing step thereby reducing excess metal build up within the chamber. In preferred embodiments, the method is performed after removal of the substrate from the processing chamber. In other preferred embodiments, the second temperature ranges from about 200.degree.-300.degree. C.
摘要翻译： 一种用于最小化在铝CVD衬底处理操作期间可以在衬底处理室内形成的多余铝沉积的方法和装置。 本发明的方法在对至少一个晶片进行铝CVD处理之后，将氮气周期性地引入处理室中，以便最小化腔室各部分中不希望的铝积聚。 根据一个实施例，本发明提供一种在衬底处理操作之后使衬底处理室内的多余金属沉积最小化的方法。 该方法包括以下步骤：在基板处理操作之后将含氮钝化气体引入室中，并且在引入步骤期间将室的至少一部分保持在第二温度，从而减少室内过量的金属积聚。 在优选的实施方案中，在从处理室中除去基材之后进行该方法。 在其它优选实施方案中，第二温度范围为约200-300℃
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公开(公告)号：US06402806B1
公开(公告)日：2002-06-11
申请号：US09608659
申请日：2000-06-30
申请人： John Vincent Schmitt , Ling Chen , George Michael Bleyle , Yu Cong , Alfred Mak , Mei Chang
发明人： John Vincent Schmitt , Ling Chen , George Michael Bleyle , Yu Cong , Alfred Mak , Mei Chang
IPC分类号： C22B1500
CPC分类号： C23C16/45561 , B01D53/002 , B01D53/72 , C23C16/4412 , C30B25/14 , H01J37/32834
摘要： A hot trap converts unreacted organic metal-film precursor from the exhaust stream of a CVD process. The converted precursor forms a metal film on the surface of the hot trap, thereby protecting hot vacuum pump surfaces from metal build up. A cold trap downstream from the hot trap freezes effluents from the exhaust stream. The metal captured by the hot trap and the effluents captured by the cold trap may then be recycled, rather than being released as environmental emissions.
摘要翻译： 热阱从CVD工艺的排气流转换未反应的有机金属膜前体。 转化的前体在热阱的表面上形成金属膜，从而保护热真空泵表面免受金属积聚。 热阱下游的冷阱将废气排出的废水冻结。 由热阱捕获的金属和由冷阱捕获的流出物可以被再循环，而不是作为环境排放而被释放。
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公开(公告)号：US06355106B1
公开(公告)日：2002-03-12
申请号：US09706321
申请日：2000-11-03
申请人： Bo Zheng , Ling Chen , Alfred Mak , Mei Chang
发明人： Bo Zheng , Ling Chen , Alfred Mak , Mei Chang
IPC分类号： C23C1600
CPC分类号： C23C16/0281 , C23C16/18
摘要： A method and apparatus for improving the adhesion of a copper layer to an underlying layer on a wafer. The layer of copper is formed over a layer of material on a wafer and the copper layer impacted with ions to improve its adhesion to the underlying layer.
摘要翻译： 一种用于改善铜层与晶片上的下层的粘合性的方法和装置。 铜层在晶片上的一层材料上形成，并且铜层与离子碰撞以改善其与下层的粘合性。
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公开(公告)号：US06171661B2
公开(公告)日：2001-01-09
申请号：US09030555
申请日：1998-02-25
申请人： Bo Zheng , Ling Chen , Alfred Mak , Mei Chang
发明人： Bo Zheng , Ling Chen , Alfred Mak , Mei Chang
IPC分类号： B05D306
CPC分类号： C23C16/0281 , C23C16/18
摘要： A method and apparatus for improving the adhesion of a copper layer to an underlying layer on a wafer. The layer of copper is formed over a layer of material on a wafer and the copper layer impacted with ions to improve its adhesion to the underlying layer.
摘要翻译： 一种用于改善铜层与晶片上的下层的粘合性的方法和装置。 铜层在晶片上的一层材料上形成，并且铜层与离子碰撞以改善其与下层的粘合性。
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公开(公告)号：US06309713B1
公开(公告)日：2001-10-30
申请号：US08884811
申请日：1997-06-30
申请人： Alfred Mak , Ling Chen , David C. Smith , Mei Chang , Steve Ghanayem
发明人： Alfred Mak , Ling Chen , David C. Smith , Mei Chang , Steve Ghanayem
IPC分类号： H05H124
CPC分类号： H01L21/76843 , C23C16/0245 , C23C16/14 , C23C16/34 , H01L21/28061 , H01L29/4941 , H01L29/66583
摘要： A layer of tungsten nitride is deposited on the upper surface of a wafer. The deposition is performed by providing a gaseous mixture and providing energy to the gaseous mixture to form a plasma. The gaseous mixture includes a first gaseous composition containing tungsten and a second gaseous composition containing nitrogen and hydrogen. The second gaseous composition is one that does not have a gas phase reaction with the first gaseous composition to form tungsten nitride, unless energy is provided to the gaseous mixture. The first gaseous composition may be tungsten hexafluoride (WF6). The gaseous mixture may be infused with energy to form a plasma by providing it with energy from an rf signal. In the plasma, the nitrogen dissociates into nitrogen ions, and the tungsten separates from the fluorine. The nitrogen ions and tungsten then combine to form tungsten nitride (W2N), which deposits on the wafer's upper surface.
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6.发明授权Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal 失效用于未反应的前体转化和流出物去除的化学气相沉积热阱
公开(公告)号：US6099649A
公开(公告)日：2000-08-08
申请号：US996735
申请日：1997-12-23
申请人： John Vincent Schmitt , Ling Chen , George Michael Bleyle , Yu Cong , Alfred Mak , Mei Chang
发明人： John Vincent Schmitt , Ling Chen , George Michael Bleyle , Yu Cong , Alfred Mak , Mei Chang
CPC分类号： C23C16/45561 , B01D53/002 , B01D53/72 , C23C16/4412 , C30B25/14 , H01J37/32834
摘要： A hot trap converts unreacted organic metal-film precursor from the exhaust stream of a CVD process. The converted precursor forms a metal film on the surface of the hot trap, thereby protecting hot vacuum pump surfaces from metal build up. A cold trap downstream from the hot trap freezes effluents from the exhaust stream. The metal captured by the hot trap and the effluents captured by the cold trap may then be recycled, rather than being released as environmental emissions.
摘要翻译： 热阱从CVD工艺的排气流转换未反应的有机金属膜前体。 转化的前体在热阱的表面上形成金属膜，从而保护热真空泵表面免受金属积聚。 热阱下游的冷阱将废气排出的废水冻结。 由热阱捕获的金属和由冷阱捕获的流出物可以被再循环，而不是作为环境排放而被释放。
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7.发明授权Deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber 失效在化学气相沉积室中使用等离子体预处理沉积氮化钨公开(公告)号：US06872429B1
公开(公告)日：2005-03-29
申请号：US09067429
申请日：1998-04-27
申请人： Ling Chen , Seshadri Ganguli , Alfred Mak
发明人： Ling Chen , Seshadri Ganguli , Alfred Mak
IPC分类号： C23C16/02 , C23C16/14 , C23C16/34 , C23C16/52 , H01L21/28 , H01L21/285 , H01L21/336 , H01L21/768 , H01L29/49 , H05H1/24
CPC分类号： H01L21/76843 , C23C16/0245 , C23C16/14 , C23C16/34 , H01L21/28061 , H01L21/28556 , H01L29/4941 , H01L29/66583
摘要： A layer of tungsten nitride is deposited on the upper surface of a wafer with improved adhesion. The deposition is performed by first pretreating the wafer with a hydrogen plasma prior to performing tungsten nitride deposition.
摘要翻译： 一层氮化钨沉积在晶片的上表面上，具有改善的粘附力。 通过在进行氮化钨沉积之前首先用氢等离子体预处理晶片来进行沉积。
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公开(公告)号：US5740009A
公开(公告)日：1998-04-14
申请号：US758531
申请日：1996-11-29
申请人： Bryan Pu , Hongching Shan , Kuang-Han Ke , Michael Welch , Semyon Sherstinsky , Alfred Mak , Ling Chen , Sue Zhang , Leonel Arturo Zuniga , Samuel C. Wilson
发明人： Bryan Pu , Hongching Shan , Kuang-Han Ke , Michael Welch , Semyon Sherstinsky , Alfred Mak , Ling Chen , Sue Zhang , Leonel Arturo Zuniga , Samuel C. Wilson
IPC分类号： H01L21/683 , H01L21/687 , H02N13/00
CPC分类号： H01L21/68735 , H01L21/6831 , H01L21/6833 , H02N13/00
摘要： Apparatus for retaining a wafer having improved wafer and chuck edge protection, contains an protection ring that circumscribes a pedestal and is biased to be in constant contact with the backside of the wafer. A biasing element uniformly biases the protection ring into contact with the circumferential edge of the wafer. The protection ring has an annular plan form that circumscribes an electrostatic chuck for retaining the wafer in a stationery position. Vertical travel of the ring is restricted by a hard stop that is formed by a portion of a focus ring which overhangs the protection ring. After a wafer is placed upon the chuck and the chucking force enabled, the chucking force easily overcomes the bias force upon the protection ring and the wafer rests upon the chuck support surface. The protection ring contacts the backside of the wafer to ensure that pedestal and electrostatic chuck are not exposed to the plasma and, when a silicon protection ring is used, the effective area of the wafer is extended beyond the physical dimensions of the wafer to facilitate a more uniform plasma distribution over the wafer.
摘要翻译： 用于保持具有改进的晶片和卡盘边缘保护的晶片的装置包含限定基座的保护环，并被偏置以与晶片的背面恒定接触。 偏置元件均匀地将保护环偏压成与晶片的周缘接触。 保护环具有环形平面形式，其环绕静电卡盘以将晶片保持在文具位置。 环的垂直行程受到由突出于保护环上的聚焦环的一部分形成的硬停止的限制。 在将晶片放置在卡盘上并且夹持力能够实现之后，夹紧力容易地克服保护环上的偏压力并且晶片搁置在卡盘支撑表面上。 保护环接触晶片的背面以确保基座和静电卡盘不暴露于等离子体，并且当使用硅保护环时，晶片的有效面积延伸超过晶片的物理尺寸以便于 在晶片上更均匀的等离子体分布。
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公开(公告)号：US5673922A
公开(公告)日：1997-10-07
申请号：US403141
申请日：1995-03-13
CPC分类号： B23Q3/186 , H01L21/68 , Y10T279/23 , Y10T279/26
摘要： A semiconductor processing chamber includes a substrate support member on which the substrate is positioned during processing in the chamber. To align the substrate on the substrate support member, an alignment member extends about the perimeter of the substrate receiving portion of the support member. The alignment member includes an alignment face thereon, which urges a substrate into alignment with the substrate receiving face of the support member as the substrate is deposited on the support member. The alignment member may also include a recessed portion, which ensures the presence of a gap between the edge of the substrate and the support member when the substrate contacts the support member.
摘要翻译： 半导体处理室包括衬底支撑构件，衬底在室中的处理期间被放置在衬底支撑构件上。 为了将衬底对准衬底支撑构件，对准构件围绕支撑构件的衬底容纳部分的周边延伸。 对准构件包括其上的对准面，当衬底沉积在支撑构件上时，该对准面将衬底与支撑构件的衬底接收面对准。 对准构件还可以包括凹陷部分，当凹陷部分基板接触支撑构件时，该部分确保在基板的边缘和支撑构件之间存在间隙。
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