公开(公告)号：US06309713B1

公开(公告)日：2001-10-30

申请号：US08884811

申请日：1997-06-30

申请人： Alfred Mak ,  Ling Chen ,  David C. Smith ,  Mei Chang ,  Steve Ghanayem

发明人： Alfred Mak ,  Ling Chen ,  David C. Smith ,  Mei Chang ,  Steve Ghanayem

IPC分类号： H05H124

CPC分类号： H01L21/76843 ,  C23C16/0245 ,  C23C16/14 ,  C23C16/34 ,  H01L21/28061 ,  H01L29/4941 ,  H01L29/66583

摘要： A layer of tungsten nitride is deposited on the upper surface of a wafer. The deposition is performed by providing a gaseous mixture and providing energy to the gaseous mixture to form a plasma. The gaseous mixture includes a first gaseous composition containing tungsten and a second gaseous composition containing nitrogen and hydrogen. The second gaseous composition is one that does not have a gas phase reaction with the first gaseous composition to form tungsten nitride, unless energy is provided to the gaseous mixture. The first gaseous composition may be tungsten hexafluoride (WF6). The gaseous mixture may be infused with energy to form a plasma by providing it with energy from an rf signal. In the plasma, the nitrogen dissociates into nitrogen ions, and the tungsten separates from the fluorine. The nitrogen ions and tungsten then combine to form tungsten nitride (W2N), which deposits on the wafer's upper surface.

公开(公告)号：US06402806B1

公开(公告)日：2002-06-11

申请号：US09608659

申请日：2000-06-30

申请人： John Vincent Schmitt ,  Ling Chen ,  George Michael Bleyle ,  Yu Cong ,  Alfred Mak ,  Mei Chang

发明人： John Vincent Schmitt ,  Ling Chen ,  George Michael Bleyle ,  Yu Cong ,  Alfred Mak ,  Mei Chang

IPC分类号： C22B1500

CPC分类号： C23C16/45561 ,  B01D53/002 ,  B01D53/72 ,  C23C16/4412 ,  C30B25/14 ,  H01J37/32834

摘要： A hot trap converts unreacted organic metal-film precursor from the exhaust stream of a CVD process. The converted precursor forms a metal film on the surface of the hot trap, thereby protecting hot vacuum pump surfaces from metal build up. A cold trap downstream from the hot trap freezes effluents from the exhaust stream. The metal captured by the hot trap and the effluents captured by the cold trap may then be recycled, rather than being released as environmental emissions.

摘要翻译： 热阱从CVD工艺的排气流转换未反应的有机金属膜前体。 转化的前体在热阱的表面上形成金属膜，从而保护热真空泵表面免受金属积聚。 热阱下游的冷阱将废气排出的废水冻结。 由热阱捕获的金属和由冷阱捕获的流出物可以被再循环，而不是作为环境排放而被释放。

公开(公告)号：US6099649A

公开(公告)日：2000-08-08

申请号：US996735

申请日：1997-12-23

申请人： John Vincent Schmitt ,  Ling Chen ,  George Michael Bleyle ,  Yu Cong ,  Alfred Mak ,  Mei Chang

发明人： John Vincent Schmitt ,  Ling Chen ,  George Michael Bleyle ,  Yu Cong ,  Alfred Mak ,  Mei Chang

IPC分类号： B01D8/00 ,  B01D53/00 ,  B01D53/72 ,  C23C16/44 ,  C30B25/14 ,  H01J37/32 ,  C23C16/00

CPC分类号： C23C16/45561 ,  B01D53/002 ,  B01D53/72 ,  C23C16/4412 ,  C30B25/14 ,  H01J37/32834

摘要： A hot trap converts unreacted organic metal-film precursor from the exhaust stream of a CVD process. The converted precursor forms a metal film on the surface of the hot trap, thereby protecting hot vacuum pump surfaces from metal build up. A cold trap downstream from the hot trap freezes effluents from the exhaust stream. The metal captured by the hot trap and the effluents captured by the cold trap may then be recycled, rather than being released as environmental emissions.

摘要翻译： 热阱从CVD工艺的排气流转换未反应的有机金属膜前体。 转化的前体在热阱的表面上形成金属膜，从而保护热真空泵表面免受金属积聚。 热阱下游的冷阱将废气排出的废水冻结。 由热阱捕获的金属和由冷阱捕获的流出物可以被再循环，而不是作为环境排放而被释放。

公开(公告)号：US06355106B1

公开(公告)日：2002-03-12

申请号：US09706321

申请日：2000-11-03

申请人： Bo Zheng ,  Ling Chen ,  Alfred Mak ,  Mei Chang

发明人： Bo Zheng ,  Ling Chen ,  Alfred Mak ,  Mei Chang

IPC分类号： C23C1600

CPC分类号： C23C16/0281 ,  C23C16/18

摘要： A method and apparatus for improving the adhesion of a copper layer to an underlying layer on a wafer. The layer of copper is formed over a layer of material on a wafer and the copper layer impacted with ions to improve its adhesion to the underlying layer.

摘要翻译： 一种用于改善铜层与晶片上的下层的粘合性的方法和装置。 铜层在晶片上的一层材料上形成，并且铜层与离子碰撞以改善其与下层的粘合性。

公开(公告)号：US06171661B2

公开(公告)日：2001-01-09

申请号：US09030555

申请日：1998-02-25

申请人： Bo Zheng ,  Ling Chen ,  Alfred Mak ,  Mei Chang

发明人： Bo Zheng ,  Ling Chen ,  Alfred Mak ,  Mei Chang

IPC分类号： B05D306

CPC分类号： C23C16/0281 ,  C23C16/18

摘要： A method and apparatus for improving the adhesion of a copper layer to an underlying layer on a wafer. The layer of copper is formed over a layer of material on a wafer and the copper layer impacted with ions to improve its adhesion to the underlying layer.

摘要翻译： 一种用于改善铜层与晶片上的下层的粘合性的方法和装置。 铜层在晶片上的一层材料上形成，并且铜层与离子碰撞以改善其与下层的粘合性。

公开(公告)号：US5201990A

公开(公告)日：1993-04-13

申请号：US704523

申请日：1991-05-23

申请人： Mei Chang ,  Ashok Sinha ,  Turgut Sahin ,  Alfred Mak ,  Cissy Leung

发明人： Mei Chang ,  Ashok Sinha ,  Turgut Sahin ,  Alfred Mak ,  Cissy Leung

IPC分类号： C23C16/44 ,  C23G5/00 ,  H01L21/285 ,  H01L21/321 ,  H01L21/768

CPC分类号： C23G5/00 ,  C23C16/4404 ,  H01L21/28512 ,  H01L21/28556 ,  H01L21/321 ,  H01L21/76877

摘要： A process is described for inhibiting the vaporization or sublimation of aluminum base alloy surfaces when exposed to temperatures in excess of 400.degree. C. in a vacuum chamber used for the processing of semiconductor wafers. The process comprises treating such aluminum base alloy surfaces with a plasma comprising a nitrogen-containing gas selected from the group consisting of nitrogen and ammonia. When nitrogen gas is used, the plasma must also contain hydrogen gas. When the vacuum chamber being treated is intended to be used for the deposition of tungsten, the maximum flow of the nitrogen-containing gas into the chamber for the initial 10 seconds of the treatment process must be controlled to avoid impairment of the subsequent tungsten depositions in the chamber. After the treatment step, the cleaned and treated aluminum surface is preferably passivated with nitrogen (N.sub.2) gas.

摘要翻译： 描述了在用于处理半导体晶片的真空室中暴露于超过400℃的温度时，抑制铝基合金表面的蒸发或升华的方法。 该方法包括用包含选自氮和氨的含氮气体的等离子体处理这种铝基合金表面。 当使用氮气时，等离子体也必须含有氢气。 当正在处理的真空室用于沉积钨时，必须控制处理过程最初10秒内进入室内的含氮气体的最大流量，以避免随后的钨沉积的损害 房间。 在处理步骤之后，清洁和处理的铝表面优选用氮气（N 2）钝化。

公开(公告)号：US5316278A

公开(公告)日：1994-05-31

申请号：US947212

申请日：1992-09-18

申请人： Semyon Sherstinsky ,  Mei Chang ,  Charles C. Harris ,  Alfred Mak ,  James F. Roberts ,  Simon W. Tam ,  Wen T. Chang

发明人： Semyon Sherstinsky ,  Mei Chang ,  Charles C. Harris ,  Alfred Mak ,  James F. Roberts ,  Simon W. Tam ,  Wen T. Chang

IPC分类号： H01L21/687 ,  B25B1/00

CPC分类号： H01L21/68721 ,  Y10S269/903

摘要： An improved clamping ring apparatus is disclosed comprising a clamping ring means for yieldably engaging a generally circular semiconductor wafer to peripherally clamp the wafer to a support pedestal to provide a peripheral seal between the wafer and the surface of the pedestal facing the wafer, adjacent the generally circular end edge of the wafer by providing a central generally circular opening in the clamping ring and a series of slots which radially extend outwardly from the central opening in the clamping ring means to thereby divide the inner portion of the clamping ring means into a series of yieldable fingers inwardly extending toward the central opening in the clamping ring means.In one embodiment, the sidewalls of the slots are slanted with respect to the planar surface of the clamping ring means at an angle sufficient, with respect to the thickness of the clamping ring means and the width of the slot,, to prevent a ray or a particle from a plasma, traveling in a direction perpendicular to the plane of the surface of the clamping ring means from striking surfaces underlying the clamping ring means, through the slot.

摘要翻译： 公开了一种改进的夹紧环装置，其包括夹紧环装置，用于可屈服地接合大致圆形的半导体晶片以将晶片周边夹持到支撑基座，以在晶片与面对晶片的基座的表面之间提供周边密封， 通过在夹紧环中提供中心大致圆形的开口，以及从夹紧环装置中的中心开口径向向外延伸的一系列槽，从而将夹紧环装置的内部分成一系列 可伸缩的手指向内延伸朝向夹紧环装置中的中心开口。 在一个实施例中，槽的侧壁相对于夹紧环装置的平坦表面以相对于夹紧环装置的厚度和槽的宽度足够的角度倾斜以防止光线或 来自等离子体的颗粒通过狭槽从垂直于夹紧环装置的表面的平面的方向通过夹紧环装置下方的冲击表面行进。

公开(公告)号：US20050287807A1

公开(公告)日：2005-12-29

申请号：US11206491

申请日：2005-08-18

申请人： Ken Lai ,  Jeong Byun ,  Frederick Wu ,  Ramanujapuran Srinivas ,  Avgerinos Gelatos ,  Mei Chang ,  Moris Kori ,  Ashok Sinha ,  Hua Chung ,  Hongbin Fang ,  Alfred Mak ,  Michael Yang ,  Ming Xi

发明人： Ken Lai ,  Jeong Byun ,  Frederick Wu ,  Ramanujapuran Srinivas ,  Avgerinos Gelatos ,  Mei Chang ,  Moris Kori ,  Ashok Sinha ,  Hua Chung ,  Hongbin Fang ,  Alfred Mak ,  Michael Yang ,  Ming Xi

IPC分类号： C23C16/14 ,  C23C16/02 ,  C23C16/04 ,  C23C16/08 ,  C23C16/44 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： C23C16/45525 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45523 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.

摘要翻译： 提供了沉积钨膜的方法。 所述方法包括通过交替地将钨前体和还原气体吸附在基底上沉积成核层，以及在成核层上沉积钨层。

公开(公告)号：US5858464A

公开(公告)日：1999-01-12

申请号：US791131

申请日：1997-02-13

申请人： Karl Littau ,  Dashun S. Zhou ,  Alfred Mak ,  Ling Chen

发明人： Karl Littau ,  Dashun S. Zhou ,  Alfred Mak ,  Ling Chen

IPC分类号： C23C16/20 ,  C23C16/44 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/52

CPC分类号： H01L21/28556 ,  C23C16/4401 ,  C23C16/4404

摘要： A method and apparatus for minimizing excess aluminum deposition that can build up inside a substrate processing chamber during an aluminum CVD substrate processing operation. The method of the present invention periodically introduces nitrogen into the processing chamber after aluminum CVD processing of at least a single wafer in order to minimize unwanted aluminum accumulation in various parts of the chamber. According to one embodiment, the present invention provides a method of minimizing excess metal deposition inside a substrate processing chamber after a substrate processing operation. The method includes the steps of introducing a nitrogen-containing passivating gas into a chamber after the substrate processing operation, and maintaining at least a portion of the chamber at a second temperature during the introducing step thereby reducing excess metal build up within the chamber. In preferred embodiments, the method is performed after removal of the substrate from the processing chamber. In other preferred embodiments, the second temperature ranges from about 200.degree.-300.degree. C.

摘要翻译： 一种用于最小化在铝CVD衬底处理操作期间可以在衬底处理室内形成的多余铝沉积的方法和装置。 本发明的方法在对至少一个晶片进行铝CVD处理之后，将氮气周期性地引入处理室中，以便最小化腔室各部分中不希望的铝积聚。 根据一个实施例，本发明提供一种在衬底处理操作之后使衬底处理室内的多余金属沉积最小化的方法。 该方法包括以下步骤：在基板处理操作之后将含氮钝化气体引入室中，并且在引入步骤期间将室的至少一部分保持在第二温度，从而减少室内过量的金属积聚。 在优选的实施方案中，在从处理室中除去基材之后进行该方法。 在其它优选实施方案中，第二温度范围为约200-300℃

公开(公告)号：US06872429B1

公开(公告)日：2005-03-29

申请号：US09067429

申请日：1998-04-27

申请人： Ling Chen ,  Seshadri Ganguli ,  Alfred Mak

发明人： Ling Chen ,  Seshadri Ganguli ,  Alfred Mak

IPC分类号： C23C16/02 ,  C23C16/14 ,  C23C16/34 ,  C23C16/52 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/768 ,  H01L29/49 ,  H05H1/24

CPC分类号： H01L21/76843 ,  C23C16/0245 ,  C23C16/14 ,  C23C16/34 ,  H01L21/28061 ,  H01L21/28556 ,  H01L29/4941 ,  H01L29/66583

摘要： A layer of tungsten nitride is deposited on the upper surface of a wafer with improved adhesion. The deposition is performed by first pretreating the wafer with a hydrogen plasma prior to performing tungsten nitride deposition.

摘要翻译： 一层氮化钨沉积在晶片的上表面上，具有改善的粘附力。 通过在进行氮化钨沉积之前首先用氢等离子体预处理晶片来进行沉积。