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公开(公告)号：US06830624B2
公开(公告)日：2004-12-14
申请号：US10429022
申请日：2003-05-02
IPC分类号： H01L2100
CPC分类号： H01J37/3244 , C23C16/4405 , C23C16/455
摘要： A flow of a remotely-generated plasma to a processing chamber by-passes a blocker plate and thereby avoids unwanted recombination of active species. By-passing the blocker plate according to embodiments of the present invention avoids the high pressures arising upstream of the blocker plate, inhibiting ion recombination and elevating the concentration of reactive ions available in the processing chamber for cleaning and other reactions. In accordance with one embodiment of the present invention, the flowed ions may be distributed beyond the edge of an underlying blocker plate through channels of a separate by-pass plate positioned between the gas box and the blocker plate. In accordance with an alternative embodiment in accordance with the present invention, the flow of remotely generated active ion species may be distributed beyond the edge of an underlying blocker plate through channels of the gas box itself.
摘要翻译： 远程产生的等离子体到处理室的流动通过阻挡板，从而避免活性物质的不期望的重组。 旁路根据本发明的实施方案的阻滞板避免了阻滞板上游产生的高压，抑制离子复合并提高处理室中可用的反应离子的浓度进行清洗和其它反应。 根据本发明的一个实施例，流动的离子可以通过位于气体箱和阻挡板之间的单独的旁路板的通道分布在下面的阻挡板的边缘之外。 根据本发明的替代实施例，远程生成的活性离子物质的流动可以通过气体箱本身的通道分布在下面的阻挡板的边缘之外。
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公开(公告)号：US20090120364A1
公开(公告)日：2009-05-14
申请号：US12251323
申请日：2008-10-14
IPC分类号： C23C16/455 , B67D5/56 , B05B1/34
CPC分类号： C23C16/45512 , C23C16/455 , C23C16/45561 , Y10T137/87652
摘要： A gas mixing system for a semiconductor wafer processing chamber is described. The mixing system may include a gas mixing chamber concentrically aligned with a gas transport tube that extends to a blocker plate. The gas mixing chamber and the transport tube are separated by a porous barrier that increases a duration of gas mixing in the gas mixing chamber before processes gases migrate into the transport tube. The system may also include a gas mixing insert having a top section with a first diameter and a second section with a second diameter smaller than the first diameter and concentrically aligned with the top section. The processes gases enter the top section of the insert and follow channels through the second section that cause the gases to mix and swirl in the gas mixing chamber. The second section extends into the gas mixing chamber while still leaving space for the mixing and swirling around the sidewalls and bottom of the mixing chamber.
摘要翻译： 描述了用于半导体晶片处理室的气体混合系统。 混合系统可以包括与延伸到阻挡板的气体输送管同心对准的气体混合室。 气体混合室和输送管由多孔隔离物隔开，在加工气体迁移到输送管中之前，气体混合室中的气体混合持续时间增加。 该系统还可以包括具有第一直径的顶部部分和具有小于第一直径的第二直径并与顶部部分同心对准的第二部分的气体混合插入件。 工艺气体进入插入件的顶部，并且跟随通道穿过第二部分，导致气体在气体混合室中混合和旋转。 第二部分延伸到气体混合室中，同时仍然留下用于混合和混合在混合室的侧壁和底部周围的空间。
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公开(公告)号：US20170274498A1
公开(公告)日：2017-09-28
申请号：US15461944
申请日：2017-03-17
申请人： Jeonghoon Oh , Edwin C. Suarez , Jason Garcheung Fung , Eric Lau , King Yi Heung , Ashwin Murugappan Chockalingam , Daniel Redfield , Charles C. Garretson , Thomas H. Osterheld
发明人： Jeonghoon Oh , Edwin C. Suarez , Jason Garcheung Fung , Eric Lau , King Yi Heung , Ashwin Murugappan Chockalingam , Daniel Redfield , Charles C. Garretson , Thomas H. Osterheld
摘要： A chemical mechanical polishing system includes a substrate support configured to hold a substrate, a polishing pad assembly include a membrane and a polishing pad portion having a polishing surface, a polishing pad carrier, and a drive system configured to cause relative motion between the substrate support and the polishing pad carrier. The polishing pad portion is joined to the membrane on a side opposite the polishing surface. The polishing surface has a width parallel to the polishing surface at least four times smaller than a diameter of the substrate. An outer surface of the polishing pad portion includes at least one recess and at least one plateau having a top surface that provides the polishing surface. The polishing surface has a plurality of edges defined by intersections between side walls of the at least one recess and a top surface of the at least one plateau.
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公开(公告)号：US20110197814A1
公开(公告)日：2011-08-18
申请号：US12982843
申请日：2010-12-30
IPC分类号： C23C4/00
CPC分类号： C23C16/45565 , C23C16/509 , H01J37/32082 , H01J37/32431 , H01J37/3244
摘要： Embodiments of the present invention generally relate to apparatus for reducing arcing and parasitic plasma in substrate processing chambers. The apparatus generally include a processing chamber having a substrate support, a backing plate, and a showerhead disposed therein. A showerhead suspension electrically couples the backing plate to the showerhead. An electrically conductive bracket is coupled to the backing plate and spaced apart from the showerhead. The electrically conductive bracket may include a plate, a lower portion, an upper portion, and a vertical extension. The electrically conductive bracket contacts an electrical isolator.
摘要翻译： 本发明的实施例一般涉及用于减少衬底处理室中的电弧和寄生等离子体的装置。 该设备通常包括处理室，其具有设置在其中的基板支撑件，背板和喷头。 喷头悬挂将背板电连接到喷头。 导电支架联接到背板并与喷头间隔开。 导电支架可以包括板，下部，上部和垂直延伸部。 导电支架接触电隔离器。
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公开(公告)号：US09850576B2
公开(公告)日：2017-12-26
申请号：US12982843
申请日：2010-12-30
IPC分类号： C23C16/00 , C23C16/50 , C23F1/00 , H01L21/306 , C23C16/455 , H01J37/32 , C23C16/509
CPC分类号： C23C16/45565 , C23C16/509 , H01J37/32082 , H01J37/32431 , H01J37/3244
摘要： Embodiments of the present invention generally relate to apparatus for reducing arcing and parasitic plasma in substrate processing chambers. The apparatus generally include a processing chamber having a substrate support, a backing plate, and a showerhead disposed therein. A showerhead suspension electrically couples the backing plate to the showerhead. An electrically conductive bracket is coupled to the backing plate and spaced apart from the showerhead. The electrically conductive bracket may include a plate, a lower portion, an upper portion, and a vertical extension. The electrically conductive bracket contacts an electrical isolator.
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