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    Blocker plate by-pass for remote plasma clean
    1.
    发明授权
    Blocker plate by-pass for remote plasma clean 失效
    阻挡板旁路用于远程等离子体清洁

    公开(公告)号：US06830624B2

    公开(公告)日：2004-12-14

    申请号：US10429022

    申请日：2003-05-02

    申请人： Karthik Janakiraman ,  Edwin C. Suarez

    发明人： Karthik Janakiraman ,  Edwin C. Suarez

    IPC分类号： H01L2100

    CPC分类号： H01J37/3244 ,  C23C16/4405 ,  C23C16/455

    摘要： A flow of a remotely-generated plasma to a processing chamber by-passes a blocker plate and thereby avoids unwanted recombination of active species. By-passing the blocker plate according to embodiments of the present invention avoids the high pressures arising upstream of the blocker plate, inhibiting ion recombination and elevating the concentration of reactive ions available in the processing chamber for cleaning and other reactions. In accordance with one embodiment of the present invention, the flowed ions may be distributed beyond the edge of an underlying blocker plate through channels of a separate by-pass plate positioned between the gas box and the blocker plate. In accordance with an alternative embodiment in accordance with the present invention, the flow of remotely generated active ion species may be distributed beyond the edge of an underlying blocker plate through channels of the gas box itself.

    摘要翻译： 远程产生的等离子体到处理室的流动通过阻挡板，从而避免活性物质的不期望的重组。 旁路根据本发明的实施方案的阻滞板避免了阻滞板上游产生的高压，抑制离子复合并提高处理室中可用的反应离子的浓度进行清洗和其它反应。 根据本发明的一个实施例，流动的离子可以通过位于气体箱和阻挡板之间的单独的旁路板的通道分布在下面的阻挡板的边缘之外。 根据本发明的替代实施例，远程生成的活性离子物质的流动可以通过气体箱本身的通道分布在下面的阻挡板的边缘之外。

    GAS MIXING SWIRL INSERT ASSEMBLY
    2.
    发明申请
    GAS MIXING SWIRL INSERT ASSEMBLY 审中-公开
    气体混合开关插件组件

    公开(公告)号：US20090120364A1

    公开(公告)日：2009-05-14

    申请号：US12251323

    申请日：2008-10-14

    申请人： Edwin C. Suarez ,  Karthik Janakiraman ,  Paul Edward Gee

    发明人： Edwin C. Suarez ,  Karthik Janakiraman ,  Paul Edward Gee

    IPC分类号： C23C16/455 ,  B67D5/56 ,  B05B1/34

    CPC分类号： C23C16/45512 ,  C23C16/455 ,  C23C16/45561 ,  Y10T137/87652

    摘要： A gas mixing system for a semiconductor wafer processing chamber is described. The mixing system may include a gas mixing chamber concentrically aligned with a gas transport tube that extends to a blocker plate. The gas mixing chamber and the transport tube are separated by a porous barrier that increases a duration of gas mixing in the gas mixing chamber before processes gases migrate into the transport tube. The system may also include a gas mixing insert having a top section with a first diameter and a second section with a second diameter smaller than the first diameter and concentrically aligned with the top section. The processes gases enter the top section of the insert and follow channels through the second section that cause the gases to mix and swirl in the gas mixing chamber. The second section extends into the gas mixing chamber while still leaving space for the mixing and swirling around the sidewalls and bottom of the mixing chamber.

    摘要翻译： 描述了用于半导体晶片处理室的气体混合系统。 混合系统可以包括与延伸到阻挡板的气体输送管同心对准的气体混合室。 气体混合室和输送管由多孔隔离物隔开，在加工气体迁移到输送管中之前，气体混合室中的气体混合持续时间增加。 该系统还可以包括具有第一直径的顶部部分和具有小于第一直径的第二直径并与顶部部分同心对准的第二部分的气体混合插入件。 工艺气体进入插入件的顶部，并且跟随通道穿过第二部分，导致气体在气体混合室中混合和旋转。 第二部分延伸到气体混合室中，同时仍然留下用于混合和混合在混合室的侧壁和底部周围的空间。

    BIG FOOT LIFT PIN
    8.
    发明申请
    BIG FOOT LIFT PIN 审中-公开
    大脚提升针

    公开(公告)号：US20090314211A1

    公开(公告)日：2009-12-24

    申请号：US12483845

    申请日：2009-06-12

    申请人： Dale R. Du Bois ,  Mark A. Fodor ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez

    发明人： Dale R. Du Bois ,  Mark A. Fodor ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez

    IPC分类号： C23C16/458 ,  B23Q1/44

    CPC分类号： H01L21/68742

    摘要： Embodiments described herein generally provide a lift pin assembly having increased wafer placement accuracy, repeatability, reliability, and corrosion resistance. In one embodiment, a lift pin assembly for positioning a substrate relative to a substrate support is provided. The lift pin assembly comprises a lift pin comprising a pin shaft, a pin head coupled with a first end of the pin shaft for supporting the substrate, and a shoulder coupled with a second end of the pin shaft. The lift pin assembly further comprises a cylindrical body slidably coupled with the pin shaft and a locking pin for preventing the cylindrical body from sliding along the shaft, wherein the shoulder has a through-hole dimensioned to accommodate the locking pin.

    摘要翻译： 本文描述的实施例通常提供具有增加的晶片放置精度，重复性，可靠性和耐腐蚀性的提升销组件。 在一个实施例中，提供了一种用于相对于衬底支撑件定位衬底的提升销组件。 提升销组件包括提升销，该提升销包括销轴，与销轴的第一端联接以支撑衬底的销头，以及与销轴的第二端联接的肩部。 提升销组件还包括与销轴可滑动地连接的圆柱形主体和用于防止圆柱形主体沿着轴滑动的锁定销，其中肩部具有尺寸适于容纳锁定销的通孔。

    PEDESTAL HEATER FOR LOW TEMPERATURE PECVD APPLICATION
    9.
    发明申请
    PEDESTAL HEATER FOR LOW TEMPERATURE PECVD APPLICATION 审中-公开
    PEDESTAL加热器用于低温PECVD应用

    公开(公告)号：US20090314208A1

    公开(公告)日：2009-12-24

    申请号：US12490168

    申请日：2009-06-23

    申请人： Jianhua Zhou ,  Lipyeow Yap ,  Dmitry Sklyar ,  Mohamad Ayoub ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez

    发明人： Jianhua Zhou ,  Lipyeow Yap ,  Dmitry Sklyar ,  Mohamad Ayoub ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez

    IPC分类号： C23C16/54

    CPC分类号： C23C16/4586 ,  C23C16/46 ,  C23C16/52 ,  H01L21/67103 ,  H01L21/68792

    摘要： A method and apparatus for providing power to a heated support pedestal is provided. In one embodiment, a process kit is described. The process kit includes a hollow shaft made of a conductive material coupled to a substrate support at one end and a base assembly at an opposing end, the base assembly adapted to couple to a power box disposed on a semiconductor processing tool. In one embodiment, the base assembly comprises at least one exposed electrical connector disposed in an insert made of a dielectric material, such as a plastic resin.

    摘要翻译： 提供了一种用于向加热的支撑台提供电力的方法和装置。 在一个实施方案中，描述了处理试剂盒。 该处理套件包括一个空心轴，该导电材料由一端连接到一基板支撑件，一相对端连接一底座组件，该基座组件适于耦接至设置在半导体加工工具上的动力箱。 在一个实施例中，基座组件包括至少一个暴露的电连接器，其设置在由电介质材料（例如塑料树脂）制成的插入件中。

    NONPLANAR FACEPLATE FOR A PLASMA PROCESSING CHAMBER
    10.
    发明申请
    NONPLANAR FACEPLATE FOR A PLASMA PROCESSING CHAMBER 有权
    用于等离子体加工室的不锈钢板

    公开(公告)号：US20090269512A1

    公开(公告)日：2009-10-29

    申请号：US12110879

    申请日：2008-04-28

    申请人： Jianhua Zhou ,  Deenesh Padhi ,  Karthik Janakiraman ,  Hang Yu ,  Siu F. Cheng ,  Yoganand Saripalli ,  Tersem Summan

    发明人： Jianhua Zhou ,  Deenesh Padhi ,  Karthik Janakiraman ,  Hang Yu ,  Siu F. Cheng ,  Yoganand Saripalli ,  Tersem Summan

    IPC分类号： C23C16/44

    CPC分类号： C23C16/5096 ,  H01J37/32541 ,  Y10T117/10

    摘要： A method and apparatus for adjust local plasma density during a plasma process. One embodiment provides an electrode assembly comprising a conductive faceplate having a nonplanar surface. The nonplanar surface is configured to face a substrate during processing and the conductive faceplate is disposed so that the nonplanar surface is opposing a substrate support having an electrode. The conductive faceplate and the substrate support form a plasma volume. The nonplanar surface is configured to adjust electric field between the conductive plate and the electrode by varying a distance between the conductive plate and the electrode.

    摘要翻译： 一种用于在等离子体工艺期间调节局部等离子体密度的方法和装置。 一个实施例提供了一种电极组件，其包括具有非平面表面的导电面板。 非平面表面被配置为在处理期间面向衬底，并且设置导电面板使得非平面表面与具有电极的衬底支撑件相对。 导电面板和基板支撑件形成等离子体体积。 非平面被配置为通过改变导电板和电极之间的距离来调节导电板和电极之间的电场。