公开(公告)号：US06642489B2

公开(公告)日：2003-11-04

申请号：US09758000

申请日：2001-01-09

申请人： Kartik Ramaswamy ,  Dennis S. Grimard ,  Philip M. Salzman ,  Liang-Guo Wang ,  Kwok Manus Wong

发明人： Kartik Ramaswamy ,  Dennis S. Grimard ,  Philip M. Salzman ,  Liang-Guo Wang ,  Kwok Manus Wong

IPC分类号： H05B610

CPC分类号： H01L21/67098

摘要： A conduit has a heating system disposed therein. The heating system generates heat in response to magnetic flux generated by an inductive coil. The heating system has a heat transfer element and a plurality of ferromagnetic elements. The heat transfer element may be displaced within the conduit to control the amount of heat generated.

摘要翻译： 导管具有设置在其中的加热系统。 加热系统响应于由感应线圈产生的磁通而产生热量。 加热系统具有传热元件和多个铁磁元件。 传热元件可以在导管内移位以控制产生的热量。

公开(公告)号：US06494958B1

公开(公告)日：2002-12-17

申请号：US09607100

申请日：2000-06-29

申请人： Shamouil Shamouilian ,  Jon M. McChesney ,  Kwok Manus Wong ,  Liang-Guo Wang ,  Alexander M. Veytser ,  Dennis S. Grimard

发明人： Shamouil Shamouilian ,  Jon M. McChesney ,  Kwok Manus Wong ,  Liang-Guo Wang ,  Alexander M. Veytser ,  Dennis S. Grimard

IPC分类号： C23C1600

CPC分类号： H01J37/32082 ,  C23C16/4581 ,  C23C16/4586 ,  C23C16/505

摘要： A process chamber 110 capable of processing a substrate 30 in a plasma of process gas. The chamber 110 comprises a support 200 having a dielectric 210 covering an electrode 220 and a conductor 230 below the electrode 220. A voltage supply 180 supplies a gas energizing voltage to the conductor 220, and the conductor is adapted to capacitively couple the voltage to the electrode 220 to energize the process gas. Alternatively, the voltage may be supplied to the electrode 220 through a connector 195 which can capacitively couple with the conductor 230. A DC power supply 190 may also provide an electrostatic chucking voltage to the electrode 220. In one version, the conductor 230 comprises an interposer 280.

摘要翻译： 能够处理处理气体的等离子体中的基板30的处理室110。 腔室110包括支撑件200，其具有覆盖电极220的电介质210和电极220下方的导体230.电压源180​​向导体220提供气体激励电压，并且导体适于将电压电容耦合到 电极220以使处理气体通电。 或者，电压可以通过能够与导体230电容耦合的连接器195提供给电极220.直流电源190还可以向电极220提供静电夹持电压。在一种形式中，导体230包括 插入器280。

公开(公告)号：US06478924B1

公开(公告)日：2002-11-12

申请号：US09513992

申请日：2000-03-07

申请人： Shamouil Shamouilian ,  Arnold Kholodenko ,  Kwok Manus Wong ,  Liang-Guo Wang ,  Alexander M. Veytser ,  Dennis S. Grimard

发明人： Shamouil Shamouilian ,  Arnold Kholodenko ,  Kwok Manus Wong ,  Liang-Guo Wang ,  Alexander M. Veytser ,  Dennis S. Grimard

IPC分类号： H05H100

CPC分类号： H01J37/32706 ,  H01L21/6833 ,  Y10T279/23

摘要： A process chamber 110 capable of processing a substrate 50 in a plasma comprises a dielectric 210 covering a first electrode 220 and a second electrode 230, a conductor 250 supporting the dielectric 210, and a voltage supply 170 to supply an RF voltage to the first electrode 220 or the second electrode 230 in the dielectric 210. The first electrode 220 capacitively couples with a process electrode 225 to energize process gas in the process chamber 110 and RF voltage applied to the second electrode 230 is capacitively coupled to the conductor 250 and through a collar 260 or the second electrode 230 is directly capacitively coupled through the collar 260.

摘要翻译： 能够处理等离子体中的衬底50的处理室110包括覆盖第一电极220和第二电极230的电介质210，支撑电介质210的导体250以及向第一电极提供RF电压的电压源170 220或电介质210中的第二电极230.第一电极220与处理电极225电容耦合以激励处理室110中的处理气体，并且施加到第二电极230的RF电压电容耦合到导体250并且通过 套环260或第二电极230通过套环260直接电容耦合。

公开(公告)号：US6151203A

公开(公告)日：2000-11-21

申请号：US212000

申请日：1998-12-14

申请人： Shamouil Shamouilian ,  Ananda Kumar ,  Arnold Kholodenko ,  Dennis S. Grimard ,  Liang Guo Wang ,  Gerhard Schneider ,  Michael G. Chafin ,  Semyon Kats ,  Alexander Veytser ,  Senh Thach

发明人： Shamouil Shamouilian ,  Ananda Kumar ,  Arnold Kholodenko ,  Dennis S. Grimard ,  Liang Guo Wang ,  Gerhard Schneider ,  Michael G. Chafin ,  Semyon Kats ,  Alexander Veytser ,  Senh Thach

IPC分类号： H01L21/68 ,  H01L21/683 ,  H01R13/05 ,  H02N13/00

CPC分类号： H01L21/6833 ,  H02N13/00 ,  H01R13/052

摘要： A semiconductor wafer chuck for retaining a semiconductor wafer during semiconductor wafer processing in a semiconductor wafer processing system including a connector connecting DC chucking voltage and RF biasing power to an electrode embedded in the body of the chuck. The connector for the chuck includes two or more members joined by resilient banana connections. The connector may be adapted for use as a high temperature connector for an electrostatic chuck operated at an elevated temperature and such connector includes a thermal impedance for reducing the heat transferred from the chuck to the bottom of the connector.

摘要翻译： 一种用于在半导体晶片处理系统中保持半导体晶片的半导体晶片卡盘，该半导体晶片处理系统包括将DC夹持电压和RF偏压功率连接到嵌入在卡盘的主体中的电极的连接器。 用于卡盘的连接器包括通过弹性香蕉连接件连接的两个或多个构件。 连接器可以适用于用于在高温下操作的静电卡盘的高温连接器，并且这种连接器包括用于减少从卡盘传递到连接器底部的热量的热阻抗。

公开(公告)号：US06320736B1

公开(公告)日：2001-11-20

申请号：US09312909

申请日：1999-05-17

申请人： Shamouil Shamouilian ,  Arnold Kholodenko ,  Siamak Salimian ,  Hamid Noorbakhsh ,  Efrain Quiles ,  Dennis S. Grimard

发明人： Shamouil Shamouilian ,  Arnold Kholodenko ,  Siamak Salimian ,  Hamid Noorbakhsh ,  Efrain Quiles ,  Dennis S. Grimard

IPC分类号： H01H2300

CPC分类号： H01L21/6831 ,  C23C16/4586

摘要： A chuck 28 for holding a substrate 4 comprises a surface 27 capable of receiving the substrate 4, the surface 27 having a gas inlet port 40 and a gas exhaust port 42. A non-sealing protrusion is between the gas inlet port 40 and the gas exhaust port 42. The non-sealing protrusion 44 impedes the flow of heat transfer gas between the gas inlet port 40 and the gas exhaust port 42 without blocking the flow of heat transfer gas. Preferably, a sealing protrusion 46 is provided around the periphery of the chuck 28 to form a substantially gas-tight seal with the substrate 4 to enclose and prevent leakage of heat transfer gas into a surrounding chamber 6.

摘要翻译： 用于保持基板4的卡盘28包括能够接收基板4的表面27，表面27具有气体入口40和排气口42.非密封突起在气体入口40和气体 排气口42.非密封突起44阻止气体入口40和排气口42之间的传热气体的流动，而不阻碍传热气体的流动。 优选地，密封突起46设置在卡盘28的周边周围，以与基底4形成基本上气密的密封，以封闭并防止传热气体泄漏到周围室6中。

公开(公告)号：US06273958B1

公开(公告)日：2001-08-14

申请号：US09329020

申请日：1999-06-09

申请人： Shamouil Shamouilian ,  Ananda H. Kumar ,  Siamak Salimian ,  Mahmoud Dahimene ,  Michael G. Chafin ,  Dennis S. Grimard

发明人： Shamouil Shamouilian ,  Ananda H. Kumar ,  Siamak Salimian ,  Mahmoud Dahimene ,  Michael G. Chafin ,  Dennis S. Grimard

IPC分类号： C23C1600

摘要： A support 55 comprises a dielectric 60 covering a primary electrode 70, the dielectric 60 having a surface 75 adapted to receive a substrate 25 and a conduit 160 that extends through the dielectric 60. The thickness of a portion of the dielectric 60 between an edge 195 of the primary electrode 70 and a surface 180 of the conduit 160 is sufficiently large to reduce the incidence of plasma formation in the conduit 160 when the primary electrode 70 is charged by an RF voltage to form a plasma of gas in the chamber 30 during processing of the substrate 25.

公开(公告)号：US6108189A

公开(公告)日：2000-08-22

申请号：US965690

申请日：1997-11-06

申请人： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

发明人： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

IPC分类号： B23Q3/15 ,  C23C16/458 ,  H01L21/683 ,  H02N13/00

CPC分类号： H01J37/321 ,  C23C16/4586 ,  H01L21/6831 ,  H01L21/6833 ,  H01J2237/2001 ,  Y10T279/23

摘要： An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises a dielectric covered electrode 110 having at least one heat transfer gas flow conduit 150 therein. An electrical isolator 200 comprising dielectric material is positioned in the gas flow conduit 150 to (i) electrically isolate the gas in the conduit from the plasma or electrode 110, and (ii) allow passage of heat transfer gas through the conduit. Preferably, the dielectric material comprises a plasma-deactivating material that has a high surface area that reduces plasma formation of gas passing through the conduit 150 in a plasma process. A semiconducting dielectric member 115 useful for rapidly charging and discharging electrostatic chucks is also described.

摘要翻译： 用于将衬底55保持在高密度等离子体中的静电卡盘100包括其中具有至少一个传热气体流动管道150的电介质覆盖电极110。 包括电介质材料的电隔离器200定位在气流导管150中以（i）将导管中的气体与等离子体或电极110电隔离，和（ii）允许传热气体通过导管。 优选地，电介质材料包括具有高表面积的等离子体钝化材料，其在等离子体工艺中减少通过导管150的气体的等离子体形成。 还描述了一种用于快速充放电静电卡盘的半导体电介质部件115。

公开(公告)号：US06736668B1

公开(公告)日：2004-05-18

申请号：US09663864

申请日：2000-09-15

申请人： Arnold V. Kholodenko ,  Senh Thach ,  Wing L. Cheng ,  Alvin Lau ,  Dennis S. Grimard

发明人： Arnold V. Kholodenko ,  Senh Thach ,  Wing L. Cheng ,  Alvin Lau ,  Dennis S. Grimard

IPC分类号： H01R1300

CPC分类号： H01R13/533 ,  H01R2201/24

摘要： An electrical coupler comprises an inner connector having upper and lower ends, an insulative outer connector element circumscribing the inner connector, and a thermally conductive flange disposed over the upper end of the inner connector and the outer connector for conducting heat from the electrical conductor. The electrical conductor may be utilized in a substrate support for semiconductor wafer processing. The substrate support comprises a chuck body having an electrode embedded therein, and an upper male connector coupled to the electrode and protruding from said chuck body. A cooling plate having the electrical coupler is positioned proximate to the chuck body. The upper male connector is inserted in the electrical coupler, and a power source coupled to the lower portion of the electrical coupler chucks and biases a wafer to an upper surface of said chuck. The thermally conductive flange conducts and transfers heat generated from the upper male connector and electrical coupler to the cooling plate.

摘要翻译： 电耦合器包括具有上端和下端的内连接器，限定内连接器的绝缘外连接器元件和设置在内连接器的上端上的导热凸缘和用于传导来自电导体的热的外连接器。 电导体可以用于半导体晶片处理的衬底支撑件中。 衬底支撑件包括具有嵌入其中的电极的卡盘体，以及耦合到电极并从所述卡盘体突出的上部阳连接器。 具有电耦合器的冷却板位于卡盘主体附近。 上部阳连接器插入电耦合器中，并且耦合到电耦合器的下部的电源卡住并将晶片偏置到所述卡盘的上表面。 导热凸缘传导和传递从上阳连接器和电耦合器产生的热量到冷却板。

公开(公告)号：US06721162B2

公开(公告)日：2004-04-13

申请号：US10095914

申请日：2002-03-12

申请人： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

发明人： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

IPC分类号： H02N1300

CPC分类号： H01J37/321 ,  C23C16/4586 ,  H01J2237/2001 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.

摘要翻译： 静电吸盘具有能够带电的电极，以静电保持基板。 复合层覆盖电极。 复合层包括（1）覆盖电极的中心部分的第一电介质材料，和（2）覆盖电极的周边部分的第二电介质材料，第二电介质材料的组成不同于第一电介质的组成 材料。 卡盘在等离子体处理室中可用于处理诸如半导体晶片的基板。

公开(公告)号：US06310755B1

公开(公告)日：2001-10-30

申请号：US09307215

申请日：1999-05-07

申请人： Arnold Kholodenko ,  Shamouil Shamouilian ,  You Wang ,  Wing L. Cheng ,  Alexander M. Veytser ,  Surinder S. Bedi ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Dennis S. Grimard ,  Ananda H. Kumar

发明人： Arnold Kholodenko ,  Shamouil Shamouilian ,  You Wang ,  Wing L. Cheng ,  Alexander M. Veytser ,  Surinder S. Bedi ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Dennis S. Grimard ,  Ananda H. Kumar

IPC分类号： H01G2300

CPC分类号： C04B35/565 ,  C04B35/185 ,  C04B35/806 ,  C04B37/006 ,  C04B37/026 ,  C04B41/009 ,  C04B41/5155 ,  C04B41/88 ,  C04B2235/402 ,  C04B2235/5248 ,  C04B2235/616 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/121 ,  C04B2237/343 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/405 ,  C04B2237/60 ,  C22C29/00 ,  C22C2204/00 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  C04B38/00 ,  C04B41/4523

摘要： An electrostatic chuck 55 has an electrostatic member 100 including a dielectric 115 having a surface 120 adapted to receive the substrate 30. The dielectric 115 covers an electrode 105 that is chargeable to electrostatically hold the substrate 30. A support 190 below the electrostatic member 100 has a cavity 300 adapted to hold a gas to serve as a thermal insulator to regulate the flow of heat from the electrostatic chuck 55 to a surface 120 of the chamber 25. The cavity 300 has a cross-sectional profile that is shaped to provide a predetermined temperature profile across the substrate 30.

摘要翻译： 静电吸盘55具有静电构件100，静电构件100包括具有适于接纳衬底30的表面120的电介质115.电介质115覆盖电极105，电极105可充电以静电保持衬底30.静电构件100下方的支撑件190具有 空腔300适于保持气体以用作热绝缘体，以调节从静电卡盘55到腔室25的表面120的热量流动。空腔300具有截面轮廓，其形状设置成提供预定的 跨越衬底30的温度分布。