公开(公告)号：US20060183057A1

公开(公告)日：2006-08-17

申请号：US11055623

申请日：2005-02-11

申请人： Katsuhiko Mitani ,  Hiroshi Fukuda

发明人： Katsuhiko Mitani ,  Hiroshi Fukuda

IPC分类号： G03F7/00

CPC分类号： G03F7/2051 ,  G03F7/70383

摘要： Formation of a photomask in the conventional art requires significant cost and time. The invention provides a patterning method of forming a desired latent image pattern by irradiating a resist film formed on a substrate with focused light beam. The method comprising adjusting intensity of the focused light beam or size thereof on the resist film depending on a design of the pattern to irradiate the resist film, thereby achieving a desired pattern with reasonable cost and time.

摘要翻译： 在传统技术中形成光掩模需要大量的成本和时间。 本发明提供一种通过用聚焦光束照射形成在基板上的抗蚀剂膜来形成期望的潜像图案的图案化方法。 该方法包括根据用于照射抗蚀剂膜的图案的设计来调整抗蚀剂膜上的聚焦光束的强度或其尺寸，从而以合理的成本和时间实现期望的图案。

公开(公告)号：US4983532A

公开(公告)日：1991-01-08

申请号：US286710

申请日：1988-12-20

申请人： Katsuhiko Mitani ,  Tomonori Tanoue ,  Chushirou Kusano ,  Susumu Takahashi ,  Masayoshi Saito ,  Hiroshi Miyazaki ,  Fumio Murai

发明人： Katsuhiko Mitani ,  Tomonori Tanoue ,  Chushirou Kusano ,  Susumu Takahashi ,  Masayoshi Saito ,  Hiroshi Miyazaki ,  Fumio Murai

IPC分类号： H01L29/205 ,  H01L21/331 ,  H01L29/73 ,  H01L29/737

CPC分类号： H01L29/66318 ,  Y10S148/01 ,  Y10S148/011 ,  Y10S148/072 ,  Y10S148/10

摘要： Microfabrication and large scale integration of a device can be realized by using a planar heterojunction bipolar transistor formed by a process comprising successively growing semiconductor layers serving as a subcollector, a collector, a base, and an emitter, respectively, through epitaxial growth on a compound semiconductor substrate in such a manner that at least one of the emitter junction and collector junction is a heterojunction, wherein a collector drawing-out metal layer is formed by the selective CVD method.

摘要翻译： 可以通过使用通过包括通过在化合物上的外延生长分别连续生长用作子集电极，集电极，基极和发射极的半导体层的工艺形成的平面异质结双极晶体管来实现器件的微结构和大规模集成 半导体衬底，其中发射极结和集电极结中的至少一个是异质结，其中通过选择性CVD法形成集电体引出金属层。

公开(公告)号：US20050082006A1

公开(公告)日：2005-04-21

申请号：US10985052

申请日：2004-11-10

申请人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

发明人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

IPC分类号： H01J37/32 ,  H01L21/00 ,  C23F1/00

CPC分类号： H01J37/32082 ,  H01J37/32623 ,  H01J37/32678 ,  H01L21/67069

摘要： A plasma processing apparatus includes a vacuum processing chamber having a pair of opposing electrodes for plasma generation, one electrode serving as a sample table for a sample including an insulator film. An electrostatic adsorption film is arranged at the sample table electrode to supply a thermal conductive gas between the film and the sample rear surface. A pressure reducing element is also provided. In addition, arrangements are provided to set a gas pressure within said vacuum processing chamber to 0.5 to 4.0 Pa and to apply a high frequency power of 30 MHz to 200 MHz between the electrodes. An electrode cover s disposed at the other electrode, and a clearance between the electrodes is 30 mm to 100 mm. The electrode cover includes fine apertures to introduce a fluorine-containing etching gas, and a power supply accelerates ions in the plasma

摘要翻译： 等离子体处理装置包括具有一对用于等离子体产生的相对电极的真空处理室，一个用作用于包括绝缘膜的样品的样品台的电极。 在样品台电极处设置静电吸附膜，以在膜和样品后表面之间提供导热气体。 还提供减压元件。 此外，提供了将所述真空处理室内的气体压力设定为0.5〜4.0Pa并在电极之间施加30MHz〜200MHz的高频功率的结构。 设置在另一个电极处的电极盖和电极之间的间隙为30mm至100mm。 电极盖包括用于引入含氟蚀刻气体的细孔，并且电源加速等离子体中的离子

公开(公告)号：US5017517A

公开(公告)日：1991-05-21

申请号：US518035

申请日：1990-05-02

申请人： Kazuhiro Mochizuki ,  Tomonori Tanoue ,  Chushirou Kusano ,  Hiroshi Masuda ,  Katsuhiko Mitani

发明人： Kazuhiro Mochizuki ,  Tomonori Tanoue ,  Chushirou Kusano ,  Hiroshi Masuda ,  Katsuhiko Mitani

IPC分类号： H01L29/73 ,  H01L21/20 ,  H01L21/28 ,  H01L21/331 ,  H01L29/205 ,  H01L29/737 ,  H01L29/80

CPC分类号： H01L29/66318 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02491 ,  H01L21/02546 ,  H01L21/02639 ,  H01L21/28 ,  Y10S148/005 ,  Y10S148/011 ,  Y10S148/026 ,  Y10S438/976

摘要： A method for fabricating a semiconductor device comprises the steps of forming the first semiconductor layer on a semiconductor substrate, forming a surface protection layer of antimony (Sb) or the material having Sb as its main component, executing the other steps necessary for the fabrication of the semiconductor device, removing the surface protection layer, and forming, on the first semiconductor layer thus exposed, the second semiconductor layer.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体衬底上形成第一半导体层，形成锑（Sb）的表面保护层或具有Sb的材料作为其主要成分，执行制造所需的其它步骤 半导体器件，去除表面保护层，并且在由此暴露的第一半导体层上形成第二半导体层。

公开(公告)号：US06197151B1

公开(公告)日：2001-03-06

申请号：US09564788

申请日：2000-05-05

申请人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

发明人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

IPC分类号： H05H100

CPC分类号： H01J37/32082 ,  H01J37/32678

摘要： A plasma processing apparatus comprising a vacuum processing chamber, a plasma generating means including a pair of electrodes, a sample table for mounting a sample to be processed inside the vacuum processing chamber and also serving as one of the electrodes, and a evacuating means for evacuating the vacuum processing chamber, which further comprises a high frequency electric power source for applying an electric power of a VHF band from 50 MHz to 200 MHz between the pair of electrodes; and a magnetic field forming means for forming a static magnetic field or a low frequency magnetic field larger than 10 gausses and smaller than 110 gausses in a direction intersecting an electric field generated between the pair of electrodes and the vicinity by the high frequency electric power source; therein the magnetic field forming means being set so that a portion where a component of the magnetic field in a direction along the surface of the sample table becomes maximum is brought to a position in the opposite side of the sample table from the middle of the both electrodes; an electron cyclotron resonance region being formed between the both electrodes by the magnetic field and the electric field.

摘要翻译： 一种等离子体处理装置，包括真空处理室，包括一对电极的等离子体产生装置，用于在真空处理室内安装待处理样品并且还用作其中一个电极的样品台，以及用于抽真空的抽空装置 所述真空处理室还包括用于在所述一对电极之间施加50MHz至200MHz的VHF频带的电力的高频电源; 以及磁场形成装置，用于在与所述一对电极之间产生的电场和由所述高频电源附近产生的电场的方向上形成大于10高斯并且小于110高斯的静态磁场或低频磁场 ; 其中，磁场形成装置被设置成使得沿着样品台的表面的方向上的磁场分量变得最大的部分被带到样品台的与两者的中间相反的一侧的位置 电极 通过磁场和电场在两个电极之间形成电子回旋共振区域。

公开(公告)号：US6129806A

公开(公告)日：2000-10-10

申请号：US808805

申请日：1997-02-28

申请人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

发明人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

IPC分类号： H01J37/32 ,  H05H1/46 ,  C23F4/00

CPC分类号： H01J37/32082 ,  H01J37/32678

摘要： A plasma processing apparatus and method are provided which are capable of easily performing precise working of a fine pattern on a large sized sample having a diameter of 300 mm or larger, and also capable of improving selectivity during micro processing. The apparatus includes a vacuum processing chamber, a plasma generating arrangement including a pair of electrodes, a sample table for mounting a sample to be processed inside the vacuum processing chamber and also serving as one of the electrodes, and an evacuating means for evacuating the vacuum processing chamber. The apparatus further includes a high frequency electric power source for applying an electric power of VHF band from 50 MHz to 200 MHz between the pair of electrodes. A magnetic field forming structure is also provided for forming a static magnetic field or a low frequency magnetic field larger than 10 gauss and smaller than 110 gauss in a direction intersecting an electric field generated between the pair of electrodes and in the vicinity thereof by the high frequency electric power source. The magnetic field forming structure is set so that a portion where a component of the magnetic field in a direction along the surface of the sample table becomes maximum is brought to a position on the opposite side of the sample table from the middle of the two electrodes. As a result, an electron cyclotron resonance region is formed between the upper and lower electrodes by the magnetic field and the electric field.

摘要翻译： 提供一种等离子体处理装置和方法，其能够容易地对直径为300mm以上的大尺寸样品进行精细图案的精确加工，并且还能够提高微加工期间的选择性。 该装置包括真空处理室，包括一对电极的等离子体产生装置，用于在真空处理室内安装待处理样品并且还用作其中一个电极的样品台，以及抽真空装置 处理室。 该装置还包括用于在一对电极之间施加50MHz至200MHz的VHF频带的电力的高频电源。 还提供了一种磁场形成结构，用于在与一对电极之间产生的电场相交的方向上形成大于10高斯并且小于110高斯的静态磁场或低频磁场，并且在其附近形成高 频率电源。 磁场形成结构被设定为使得沿着样品台的表面的方向上的磁场分量变得最大的部分被带到样品台的与两个电极的中间相反的一侧的位置 。 结果，通过磁场和电场在上电极和下电极之间形成电子回旋共振区域。

公开(公告)号：US5296733A

公开(公告)日：1994-03-22

申请号：US615381

申请日：1990-11-19

申请人： Chushiroh Kusano ,  Hiroshi Masuda ,  Katsuhiko Mitani ,  Kazuhiro Mochizuki ,  Masaru Miyazaki ,  Masahiko Kawata ,  Susumu Takahashi

发明人： Chushiroh Kusano ,  Hiroshi Masuda ,  Katsuhiko Mitani ,  Kazuhiro Mochizuki ,  Masaru Miyazaki ,  Masahiko Kawata ,  Susumu Takahashi

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/205 ,  H01L29/737 ,  H01L29/72 ,  H01L29/06

CPC分类号： H01L29/7371

摘要： A hetero junction bipolar transistor provides a contact area an area between an emitter (or collector) electrode and a wiring formed on the electrode that is larger than that of the emitter (or collector). A variation in voltage applied to an emitter (or collector)-base junctions is prevented and a stable operation of the transistor is attained. In addition, when an etching operation is carried out, an insulation film is formed on a side part of a mask. A patterning of the emitter (or collector) is then carried out and thus an emitter (or collector) having a size approximate to that of the mask is formed.

摘要翻译： 异质结双极晶体管提供接触区域，其在发射极（或集电极）电极和形成在电极上的布线之间的面积大于发射极（或集电极）的面积。 防止施加到发射极（或集电极） - 基极结的电压变化，并且获得晶体管的稳定操作。 另外，当进行蚀刻操作时，在掩模的侧面上形成绝缘膜。 然后执行发射极（或集电极）的图案化，因此形成具有接近于掩模的尺寸的发射极（或集电极）。

公开(公告)号：US06902683B1

公开(公告)日：2005-06-07

申请号：US09565536

申请日：2000-05-05

申请人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

发明人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

IPC分类号： H01J37/32 ,  H01L21/00 ,  B44C1/22

CPC分类号： H01J37/32082 ,  H01J37/32623 ,  H01J37/32678 ,  H01L21/67069

摘要： A method of plasma-processing is provided which includes placing a sample on one of electrodes provided in a vacuum processing chamber and holding the sample onto the electrodes by an electrostatic attracting force. A processing gas is introduced into an environment in which said sample is placed, and the environment is evacuated to a pressure condition for processing said sample. The processing gas is then formed into a plasma under the pressure condition, the sample is processed by the plasma, and a pulse bias voltage having a pulse cycle of 0.1 μm to 10 μm is applied to the sample.

摘要翻译： 提供了一种等离子体处理方法，其包括将样品放置在设置在真空处理室中的电极中的一个上，并通过静电吸引力将样品保持在电极上。 将处理气体引入到其中放置所述样品的环境中，并且将环境抽真空至用于处理所述样品的压力条件。 然后将处理气体在压力条件下形成等离子体，样品由等离子体处理，并且将具有0.1mum至10um的脉冲周期的脉冲偏置电压施加到样品。

公开(公告)号：US5668402A

公开(公告)日：1997-09-16

申请号：US66635

申请日：1993-05-24

申请人： Kazuhiro Mochizuki ,  Shigeo Goto ,  Chushirou Kusano ,  Masahiko Kawata ,  Hiroshi Masuda ,  Katsuhiko Mitani ,  Susumu Takahashi

发明人： Kazuhiro Mochizuki ,  Shigeo Goto ,  Chushirou Kusano ,  Masahiko Kawata ,  Hiroshi Masuda ,  Katsuhiko Mitani ,  Susumu Takahashi

IPC分类号： H01L29/73 ,  A61F7/02 ,  H01L21/20 ,  H01L21/331 ,  H01L21/338 ,  H01L29/04 ,  H01L29/205 ,  H01L29/737 ,  H01L29/812

CPC分类号： H01L29/045 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02609 ,  A61F2007/0265

摘要： A semiconductor device comprises a semiconductor substrate formed by a first single crystalline semiconductor material and semiconductor layers formed on the semiconductor substrate by a second single crystalline semiconductor material doped with an element which can easily surface segregate. The surface of the semiconductor substrate is formed of a crystalline plane substantially equivalent to a facet plane which is formed on the surface of the second single crystalline semiconductor material if the second single crystalline semiconductor material is epitaxially grown with being doped with the element on a (100) plane of the first single crystalline semiconductor material.

摘要翻译： 半导体器件包括由第一单晶半导体材料形成的半导体衬底和通过掺杂有易于表面分离的元件的第二单晶半导体材料形成在半导体衬底上的半导体层。 半导体衬底的表面由与第二单晶半导体材料的表面上形成的小平面基本相同的晶面形成，如果第二单晶半导体材料被外延生长，在第 100）平面的第一单晶半导体材料。

公开(公告)号：US5401357A

公开(公告)日：1995-03-28

申请号：US937781

申请日：1992-09-01

申请人： Hidekazu Okuhira ,  Tetsuo Ono ,  Susumu Hiraoka ,  Keizo Suzuki ,  Junji Shigeta ,  Hiroshi Masuda ,  Mitsuhiro Mori ,  Takuma Tanimoto ,  Shinichi Nakatsuka ,  Katsuhiko Mitani

发明人： Hidekazu Okuhira ,  Tetsuo Ono ,  Susumu Hiraoka ,  Keizo Suzuki ,  Junji Shigeta ,  Hiroshi Masuda ,  Mitsuhiro Mori ,  Takuma Tanimoto ,  Shinichi Nakatsuka ,  Katsuhiko Mitani

IPC分类号： H01L21/205 ,  H01L21/285 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/316 ,  H01L21/331 ,  H01L21/335 ,  H01L21/338 ,  H01L29/205 ,  H01L29/73 ,  H01L29/737 ,  H01L29/778 ,  H01L29/812 ,  B44C1/22

CPC分类号： H01L29/66318 ,  H01L21/28587 ,  H01L21/30621 ,  H01L21/3081 ,  H01L21/31654 ,  H01L29/66462

摘要： A method may be used to dry etch a sample including a plurality of regions different from each other in the photo-absorption of a light having a specified wavelength using an etching gas plasma. The method is capable of selectively etching the desired material from a plurality of materials having different types of band gap energies or from a plurality of materials having different band gap energies. The method includes a step of irradiating a light having the specified wavelength on the sample for reducing an etching rate of a region having a large photo-absorption coefficient to the light, thereby selectively etching a region having a small photo-absorption coefficient to the light.

摘要翻译： 在使用蚀刻气体等离子体对具有特定波长的光的光吸收中，可以使用一种方法来干蚀刻包括彼此不同的多个区域的样品。 该方法能够从具有不同类型的带隙能量的多种材料或具有不同带隙能量的多种材料中选择性地蚀刻所需的材料。 该方法包括在样品上照射具有特定波长的光以降低对光具有大的光吸收系数的区域的蚀刻速率的步骤，从而选择性地将具有小的光吸收系数的区域蚀刻到光 。