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公开(公告)号：US20090215241A1
公开(公告)日：2009-08-27
申请号：US12392584
申请日：2009-02-25
申请人： Katsuhiro SATO , Takahito Nakajima
发明人： Katsuhiro SATO , Takahito Nakajima
IPC分类号： H01L21/762
CPC分类号： H01L21/76224
摘要： A polysilazane perhydride solution, prepared by dispesing polysilazane perhydride in a solvent containing carbon, is applied on a semiconductor substrate (1), thereby forming a coated film (6), which is heated, volatilizing solvent therein, thereby forming a polysilazane film (7), which is chemical-treated, so the polysilazane film (7) is changed to a silicon dioxide film (8).
摘要翻译： 将通过在含碳溶剂中分散聚硅氮烷酸酐制备的聚硅氮烷过硼酸溶液施加到半导体衬底（1）上，从而形成涂覆膜（6），其中加热溶剂，从而形成聚硅氮烷膜（7 ），其被化学处理，因此将聚硅氮烷膜（7）改变为二氧化硅膜（8）。
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公开(公告)号：US08058139B2
公开(公告)日：2011-11-15
申请号：US12392584
申请日：2009-02-25
申请人： Katsuhiro Sato , Takahito Nakajima
发明人： Katsuhiro Sato , Takahito Nakajima
IPC分类号： H01L21/76
CPC分类号： H01L21/76224
摘要： A polysilazane perhydride solution, prepared by dispensing polysilazane perhydride in a solvent containing carbon, is applied on a semiconductor substrate (1), thereby forming a coated film (6), which is heated, volatilizing solvent therein, thereby forming a polysilazane film (7), which is chemical-treated, so the polysilazane film (7) is changed to a silicon dioxide film (8).
摘要翻译： 将通过在含碳溶剂中分配聚硅氮烷酸酐制备的聚硅氮烷酸酐溶液施加到半导体衬底（1）上，从而形成涂覆膜（6），其中加热溶剂，从而形成聚硅氮烷膜（7 ），其被化学处理，因此将聚硅氮烷膜（7）改变为二氧化硅膜（8）。
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3.发明授权Insulating tube, semiconductor device employing the tube, and method of manufacturing the same 失效绝缘管，采用该管的半导体器件及其制造方法公开(公告)号：US07345352B2
公开(公告)日：2008-03-18
申请号：US11715844
申请日：2007-03-09
IPC分类号： H01L29/00
CPC分类号： H01L21/76814 , H01L21/76802 , H01L21/7682 , H01L21/76835 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An insulating tube includes a underlying insulating film, a first sidewall insulating film disposed on the underlying insulating film, a second sidewall insulating film disposed on the underlying insulating film, opposite to the first sidewall insulating film so as to provide a cavity between the first and second sidewall insulating films having the same height as the first sidewall insulating film, and an upper insulating film provided over the first and second sidewall insulating films.
摘要翻译： 绝缘管包括下面的绝缘膜，设置在下面的绝缘膜上的第一侧壁绝缘膜，设置在下面的绝缘膜上的与第一侧壁绝缘膜相对的第二侧壁绝缘膜，以便在第一和第二绝缘膜之间提供空腔， 具有与第一侧壁绝缘膜相同高度的第二侧壁绝缘膜，以及设置在第一和第二侧壁绝缘膜上的上绝缘膜。
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4.发明授权公开(公告)号：US07265020B2
公开(公告)日：2007-09-04
申请号：US11235210
申请日：2005-09-27
申请人： Takeo Furuhata , Takahito Nakajima
发明人： Takeo Furuhata , Takahito Nakajima
IPC分类号： H01L21/8242
CPC分类号： H01L27/10867 , H01L27/1087
摘要： A method of manufacturing a semiconductor device includes forming a trench in a semiconductor substrate, isotropically forming a trench surface insulating film on an inner surface of the trench, the trench surface insulating film including a deep part functioning as a capacitor insulating film, forming a surface layer side insulating film on the inner surface of the trench so that the surface layer side insulating film is continuously rendered thinner from the surface side of the substrate toward the deep side of the trench, and forming an electrode layer inside the surface layer side insulating film and the trench surface insulating film both formed on the inner surface of the trench.
摘要翻译： 一种制造半导体器件的方法包括在半导体衬底中形成沟槽，在沟槽的内表面上各向同性地形成沟槽表面绝缘膜，沟槽表面绝缘膜包括用作电容器绝缘膜的深部，形成表面 在沟槽的内表面上形成层侧绝缘膜，使得表面层侧绝缘膜从衬底的表面侧朝向沟槽的深侧连续变薄，并且在表面层侧绝缘膜内部形成电极层 并且沟槽表面绝缘膜都形成在沟槽的内表面上。
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公开(公告)号：US20060258115A1
公开(公告)日：2006-11-16
申请号：US11405539
申请日：2006-04-18
IPC分类号： H01L21/76
CPC分类号： H01L27/1087
摘要： A method of manufacturing a semiconductor device includes forming a trench in a semiconductor substrate, forming a film containing impurities on an inner surface of a lower part of the trench, forming a silicon nitride film so that an upper sidewall of the trench is covered by the silicon nitride film, and diffusing the impurities outside the trench by heat treatment.
摘要翻译： 一种制造半导体器件的方法包括在半导体衬底中形成沟槽，在沟槽的下部的内表面上形成含有杂质的膜，形成氮化硅膜，使得沟槽的上侧壁被 氮化硅膜，并通过热处理将杂质扩散到沟槽外。
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公开(公告)号：US06995472B2
公开(公告)日：2006-02-07
申请号：US10693504
申请日：2003-10-27
IPC分类号： H01L23/48
CPC分类号： H01L21/76814 , H01L21/76802 , H01L21/7682 , H01L21/76835 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An insulating tube includes a underlying insulating film, a first sidewall insulating film disposed on the underlying insulating film, a second sidewall insulating film disposed on the underlying insulating film, opposite to the first sidewall insulating film so as to provide a cavity between the first and second sidewall insulating films having the same height as the first sidewall insulating film, and an upper insulating film provided over the first and second sidewall insulating films.
摘要翻译： 绝缘管包括下面的绝缘膜，设置在下面的绝缘膜上的第一侧壁绝缘膜，设置在下面的绝缘膜上的与第一侧壁绝缘膜相对的第二侧壁绝缘膜，以便在第一和第二绝缘膜之间提供空腔， 具有与第一侧壁绝缘膜相同高度的第二侧壁绝缘膜，以及设置在第一和第二侧壁绝缘膜上的上绝缘膜。
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7.发明申请Post-dry etching cleaning liquid composition and process for fabricating semiconductor device 审中-公开干燥后蚀刻清洗液组合物及制造半导体器件的工艺公开(公告)号：US20080188085A1
公开(公告)日：2008-08-07
申请号：US12075578
申请日：2008-03-11
申请人： Masafumi Muramatsu , Kazumi Asada , Yukino Hagino , Atsushi Okuyama , Takahito Nakajima , Kazuhiko Takase , Yoshihiro Uozumi , Tsuyoshi Matsumura , Takuo Ohwada , Norio Ishikawa
发明人： Masafumi Muramatsu , Kazumi Asada , Yukino Hagino , Atsushi Okuyama , Takahito Nakajima , Kazuhiko Takase , Yoshihiro Uozumi , Tsuyoshi Matsumura , Takuo Ohwada , Norio Ishikawa
IPC分类号： C23G1/00 , H01L21/461
CPC分类号： C11D11/0047 , C11D3/042 , C11D3/046 , C11D3/2075 , C11D3/2082 , C11D3/2086 , C11D3/245 , C11D7/08 , C11D7/10 , C11D7/265 , C11D7/32 , C23G1/24 , H01L21/02063 , H01L21/76811
摘要： A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.
摘要翻译： 提供了干蚀刻后的清洗基板的干燥后蚀刻清洗液组合物，含有至少一种氟化合物，乙醛酸，至少一种有机酸盐和水的清洗液组合物。 关于氟化合物，可以使用氟化铵。 关于有机酸盐，可以使用草酸铵，酒石酸铵，柠檬酸铵和乙酸铵中的至少一种。
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公开(公告)号：US5810940A
公开(公告)日：1998-09-22
申请号：US710400
申请日：1996-09-17
IPC分类号： H01L21/304 , H01L21/306 , C03C23/00
CPC分类号： H01L21/02052 , Y10S134/902
摘要： For cleaning a semiconductor wafer without exposing it to the atmosphere, after the semiconductor wafer is placed in a cleaning vessel which is filled with deionized water through a first control valve, a first cleaning fluid is supplied to the cleaning vessel through a second control valve so that the deionized water overflows. A second cleaning fluid is then supplied to the vessel through a third control valve such that the first cleaning fluid overflows to produce a mixed fluid containing the first cleaning fluid, thereby cleaning the semiconductor wafer therein.
摘要翻译： 为了清洁半导体晶片而不将其暴露于大气中，在将半导体晶片放置在通过第一控制阀填充有去离子水的清洁容器中之后，第一清洁流体通过第二控制阀供应到清洁容器，因此 去离子水溢出。 然后通过第三控制阀将第二清洁流体供应到容器，使得第一清洗流体溢出以产生包含第一清洗流体的混合流体，从而清洁其中的半导体晶片。
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9.发明授权Post-dry etching cleaning liquid composition and process for fabricating semiconductor device 有权干燥后蚀刻清洗液组合物及制造半导体器件的工艺公开(公告)号：US08513140B2
公开(公告)日：2013-08-20
申请号：US12924288
申请日：2010-09-23
申请人： Masafumi Muramatsu , Kazumi Asada , Yukino Hagino , Atsushi Okuyama , Takahito Nakajima , Kazuhiko Takase , Yoshihiro Uozumi , Tsuyoshi Matsumura , Takuo Ohwada , Norio Ishikawa
发明人： Masafumi Muramatsu , Kazumi Asada , Yukino Hagino , Atsushi Okuyama , Takahito Nakajima , Kazuhiko Takase , Yoshihiro Uozumi , Tsuyoshi Matsumura , Takuo Ohwada , Norio Ishikawa
IPC分类号： H01L21/302
CPC分类号： C11D11/0047 , C11D3/042 , C11D3/046 , C11D3/2075 , C11D3/2082 , C11D3/2086 , C11D3/245 , C11D7/08 , C11D7/10 , C11D7/265 , C11D7/32 , C23G1/24 , H01L21/02063 , H01L21/76811
摘要： A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.
摘要翻译： 提供干蚀刻后的清洗基板的干燥后蚀刻清洗液组合物，含有至少一种氟化合物，乙醛酸，至少一种有机酸盐和水的清洗液组合物。 关于氟化合物，可以使用氟化铵。 关于有机酸盐，可以使用草酸铵，酒石酸铵，柠檬酸铵和乙酸铵中的至少一种。
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公开(公告)号：US20130025935A1
公开(公告)日：2013-01-31
申请号：US13639709
申请日：2011-04-08
CPC分类号： H01R4/184 , H01R4/20 , H01R4/2495 , H01R43/0207 , Y10T29/49194
摘要： [Technical Problem]An object of the present invention is to provide a wire connecting method and a wiring harness allowed to reduce the number of types of terminals for reducing cost by increasing the number of core wire sizes able to be crimped or press-connected with respect to one terminal.[Solution to Problem]Regarding covered wires 13, 14 of which core wire diameter is larger than the core wire diameter allowed to be crimped with a wire barrel 18, an ultrasonic processing in which while pressure is applied to a core wire 16, ultrasonic energy is applied to the core wire 16 is performed. Thereby, the core wire diameter is reduced to be allowed to be crimped to the wire barrel 18, and the core wire 16 of the covered wire 13, 14 is crimped or press-connected between a pair of crimping pieces 18B of the terminal 15. Regarding covered wires 11, 12 of which core wire diameter is allowed to be crimped to the wire barrel 18, the ultrasonic processing is not performed, and the core wire 16 of the covered wire 13, 14 is directly crimped between the pair of crimping pieces 18B of the terminal 15.
摘要翻译： 技术问题本发明的目的是提供一种电线连接方法和线束，其允许通过增加能够被压接或压接的芯线尺寸的数量来减少端子类型的数量，从而降低成本 尊重一个终端。 [问题的解决方案]对于芯线直径大于允许用线筒18卷曲的芯线直径的包线13,14;超声波处理，其中当对芯线16施加压力时，超声能量 被施加到芯线16。 由此，芯线直径减小，使其能够卷绕到线筒18，并且包线13,14的芯线16被压接或压接在端子15的一对压接片18B之间。 对于允许芯线直径卷绕到线筒18的被覆线11,12，不进行超声波处理，并且被覆线13,14的芯线16直接卷曲在一对压接片之间 终端15B的18B。
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