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    Method of producing keto acids
    2.
    发明授权
    Method of producing keto acids 失效
    生产酮酸的方法

    公开(公告)号：US5371285A

    公开(公告)日：1994-12-06

    申请号：US38283

    申请日：1993-03-29

    申请人： Masahiro Kondo ,  Michio Tanaka ,  Naoya Sakamoto ,  Hajime Ooyoshi

    发明人： Masahiro Kondo ,  Michio Tanaka ,  Naoya Sakamoto ,  Hajime Ooyoshi

    IPC分类号： C07C227/02 ,  C07C229/00

    CPC分类号： C07C227/02

    摘要： In a method of producing a keto acid having the general formula ##STR1## wherein R.sup.1 and R.sup.2 independently represent an alkyl of 1-6 carbons or a cycloalkyl of 4-8 carbons, by reacting an m-aminophenol having the general formula ##STR2## wherein R.sup.1 and R.sup.2 are the same as above, with phthalic anhydride, in an organic solvent, the improvement comprising effecting the reaction in an amount of the organic solvent which is insufficient to dissolve the keto acid produced in the reaction, so that at least a portion of the resultant keto acid crystallizes out of the solvent and allowing the reaction to proceed in a heterogeneous system.

    摘要翻译： 在制备具有通式“IMAGE”的酮酸的方法中，其中R1和R2独立地表示1-6个碳原子的烷基或4-8个碳的环烷基，通过使通式为“IMAGE”的间氨基苯酚， 其中R1和R2与上述相同，在邻苯二甲酸酐中，在有机溶剂中，其改进包括使一定量的有机溶剂的反应不足以溶解在反应中产生的酮酸，使得至少一种 所得酮酸的一部分从溶剂中结晶并使反应在异相体系中进行。

    Solid state imaging device with low trap density
    6.
    发明授权
    Solid state imaging device with low trap density 失效
    具有低陷阱密度的固态成像装置

    公开(公告)号：US5591988A

    公开(公告)日：1997-01-07

    申请号：US477104

    申请日：1995-06-07

    申请人： Michio Arai ,  Takashi Inushima ,  Mitsufumi Codama ,  Kazushi Sugiura ,  Ichiro Takayama ,  Isamu Kobori ,  Yukio Yamauchi ,  Naoya Sakamoto

    发明人： Michio Arai ,  Takashi Inushima ,  Mitsufumi Codama ,  Kazushi Sugiura ,  Ichiro Takayama ,  Isamu Kobori ,  Yukio Yamauchi ,  Naoya Sakamoto

    IPC分类号： H01L21/84 ,  H01L27/12 ,  H01L27/146 ,  H01L31/113 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

    CPC分类号： H01L27/14643 ,  H01L21/84 ,  H01L27/1237 ,  H01L31/1133

    摘要： A substrate (1) has a surface covered with an insulation layer (2), on which an active layer (3') made of non-single crystal silicon through thin film technique is provided. A gate electrode layer (5') is partially provided on said active layer through a gate insulation layer (4). Said active layer (3') is subject to injection of P-type or N-type impurities to provide an image sensor of MOS structure. Bias potential is applied to a gate electrode so that a circuit between a source and a drain is in an On state, so that input light through said substrate or said gate electrode is applied to said active layer, and electrical output depending upon said input light is obtained from said source electrode or said drain electrode. Other MOS transistors for switching element and/or shift registers for operating said image sensor are provided on said substrate (1). Said active layer (3') is obtained by crystallizing said amorphous silicon layer through a laser anneal process or a high temperature anneal process, and hydrogenation process, and the trap density of said active layer is less than 5.times.10.sup.11 /cm.sup.2. Optical response time is short, less than 500 .mu.sec, so, high speed operation ten times as high as that of a prior image sensor is possible.

    摘要翻译： 基板（1）具有被绝缘层（2）覆盖的表面，在其上提供通过薄膜技术由非单晶硅制成的有源层（3'）。 栅极电极层（5'）通过栅极绝缘层（4）部分地设置在所述有源层上。 所述有源层（3'）经受注入P型或N型杂质以提供MOS结构的图像传感器。 将偏置电位施加到栅电极，使得源极和漏极之间的电路处于导通状态，使得通过所述衬底或所述栅电极的输入光被施加到所述有源层，并且根据所述输入光输出电输出 从所述源电极或所述漏电极获得。 用于操作所述图像传感器的用于开关元件和/或移位寄存器的其它MOS晶体管设置在所述基板（1）上。 所述有源层（3'）是通过激光退火工艺或高温退火工艺和氢化工艺使所述非晶硅层结晶而获得的，并且所述有源层的陷阱密度小于5×10 11 / cm 2。 光学响应时间短，小于500μs，因此可以实现高于现有图像传感器的10倍的高速度运行。