公开(公告)号：US20060255182A1

公开(公告)日：2006-11-16

申请号：US11411983

申请日：2006-04-27

申请人： Katsuya Okumura ,  Manabu Yabe ,  Yasuyuki Koyagi ,  Muneo Harada ,  Tomofumi Kiyomoto

发明人： Katsuya Okumura ,  Manabu Yabe ,  Yasuyuki Koyagi ,  Muneo Harada ,  Tomofumi Kiyomoto

IPC分类号： B05B1/26 ,  B05B1/34

CPC分类号： B41J2/1609 ,  B05C5/007 ,  B05C5/0212 ,  B05C5/027 ,  B41J2/1628 ,  B41J2/1631 ,  H01J9/242

摘要： Using a silicon single crystal with (100) plane orientation as a base material, a pectinate portion having a slope portion and a patterning material guiding groove is formed through photolithography process. A liquid reservoir for keeping a patterning material common to tooth portions of the pectinate portion is formed in the same step as a step for forming the guiding grooves. In forming slope portion, anisotropic wet etching allows easy and accurate formation of a slope portion with (111) plane orientation to (100) plane orientation, by taking advantage of differences in speed due to the plane orientations. In addition, by forming a groove portion using anisotropic dry etching, the patterning material guiding groove having a perpendicular sidewall reaching the slope portion may be formed at high accuracy. A pattern forming apparatus with high accuracy and low cost is provided.

摘要翻译： 使用具有（100）面取向的硅单晶作为基材，通过光刻工艺形成具有倾斜部分和图案形成材料引导槽的果胶部分。 在与用于形成导向槽的步骤相同的步骤中形成用于保持图形材料的共同于图形部分的牙齿部分的图案材料的液体储存器。 在形成斜坡部分时，通过利用由于平面取向的速度差异，各向异性湿蚀刻允许容易且准确地形成具有（111）面取向到（100）面取向的斜面部分。 此外，通过使用各向异性干蚀刻形成槽部，可以高精度地形成具有到达斜面部的垂直侧壁的图案形成材料导向槽。 提供了一种高精度，低成本的图案形成装置。

公开(公告)号：US20100032357A1

公开(公告)日：2010-02-11

申请号：US12377274

申请日：2007-08-14

申请人： Tomofumi Kiyomoto ,  Muneo Harada ,  Hiroyuki Moriyama ,  Katsuya Okumura

发明人： Tomofumi Kiyomoto ,  Muneo Harada ,  Hiroyuki Moriyama ,  Katsuya Okumura

IPC分类号： B01D15/08 ,  B44C1/22

CPC分类号： G01N30/6095 ,  G01N30/52 ,  G01N2030/525

摘要： A high separation efficiency column 10 for chromatography and a manufacturing method thereof are provided. The column 10 for chromatography includes a first substrate 11 having a plurality of pillars 22 formed on one surface thereof and a second substrate 12 bonded to the one surface of the first substrate 11 and constituting a flow path 13 together with the plurality of pillars 22 formed on the first substrate. At least a surface of each pillar is formed in a porous shape.

摘要翻译： 提供了用于色谱法的高分离效率柱10及其制造方法。 用于层析的柱10包括：第一基板11，其具有在其一个表面上形成的多个柱22;以及第二基板12，其与第一基板11的一个表面接合，并与形成的多个柱22一起构成流路13 在第一基板上。 每个柱的至少一个表面形成为多孔形状。

公开(公告)号：US20090314065A1

公开(公告)日：2009-12-24

申请号：US12441608

申请日：2008-05-08

申请人： Tomofumi Kiyomoto ,  Muneo Harada ,  Katsuyuki Ono

发明人： Tomofumi Kiyomoto ,  Muneo Harada ,  Katsuyuki Ono

IPC分类号： G01N30/60 ,  G01N30/64 ,  G01N30/74

CPC分类号： G01N30/6095 ,  G01N30/6004

摘要： A chromatography detector 11 includes a base substrate having a main surface 12a and a column flow path 15 formed on the main surface 12a, and a substrate block 13 and 14, which has a detection space 18 communicating with an outlet of the column flow path 15 and is stacked on the main surface 12a of the base substrate 12 so as to close a top surface of the column flow path 15.

摘要翻译： 色谱检测器11包括具有形成在主表面12a上的主表面12a和柱流路15的基底基板和具有与柱流路15的出口连通的检测空间18的基板块13和14 并且堆叠在基底基板12的主表面12a上，以封闭柱流路15的顶面。

公开(公告)号：US20070181928A1

公开(公告)日：2007-08-09

申请号：US11508141

申请日：2006-08-23

申请人： Yoshiki Yamanishi ,  Muneo Harada ,  Takahiro Kitano ,  Tatsuzo Kawaguchi ,  Yoshihiro Hirota ,  Kinji Yamada ,  Tomotaka Shinoda ,  Katsuya Okumura ,  Shuichi Kawano

发明人： Yoshiki Yamanishi ,  Muneo Harada ,  Takahiro Kitano ,  Tatsuzo Kawaguchi ,  Yoshihiro Hirota ,  Kinji Yamada ,  Tomotaka Shinoda ,  Katsuya Okumura ,  Shuichi Kawano

IPC分类号： H01L29/94

CPC分类号： H01L23/50 ,  H01G4/228 ,  H01G4/33 ,  H01L23/481 ,  H01L24/81 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01056 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H05K1/162 ,  H05K3/002 ,  H05K2201/09509 ,  H05K2201/096 ,  H05K2201/10378

摘要： A capacitor having a high quality and a manufacturing method of the same are provided. A capacitor has a lower electrode formed on an oxide film, a dielectric layer formed on the lower electrode, an upper electrode formed so as to face the lower electrode with the dielectric layer between, and an upper electrode formed so as to cover the upper electrode, an opening portion of the upper electrode and an opening portion of the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to pattern the dielectric layer by using the upper electrode as a mask, and provide a capacitor having a high-quality dielectric layer by preventing impurity diffusion into the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to prevent the dielectric layer from being exposed to etching liquid, liquid developer, etc.

摘要翻译： 提供了具有高质量的电容器及其制造方法。 电容器具有形成在氧化膜上的下电极，形成在下电极上的电介质层，形成为与电极之间介电层相对的下电极的上电极和形成为覆盖上电极的上电极 ，上电极的开口部分和电介质层的开口部分。 通过在电介质层上形成上电极，可以通过使用上电极作为掩模对电介质层进行图案化，并且通过防止杂质扩散到电介质层中来提供具有高质量电介质层的电容器。 通过在电介质层上形成上部电极，可以防止电介质层暴露于蚀刻液体，液体显影剂等

公开(公告)号：US20070126041A1

公开(公告)日：2007-06-07

申请号：US11508204

申请日：2006-08-23

申请人： Tomotaka Shinoda ,  Kinji Yamada ,  Takahiro Kitano ,  Yoshiki Yamanishi ,  Muneo Harada ,  Tatsuzo Kawaguchi ,  Yoshihiro Hirota ,  Katsuya Okumura ,  Shuichi Kawano

发明人： Tomotaka Shinoda ,  Kinji Yamada ,  Takahiro Kitano ,  Yoshiki Yamanishi ,  Muneo Harada ,  Tatsuzo Kawaguchi ,  Yoshihiro Hirota ,  Katsuya Okumura ,  Shuichi Kawano

IPC分类号： H01L29/94 ,  H01L21/00

CPC分类号： H01L28/65 ,  H01L27/11507 ,  H01L28/55 ,  Y10T29/435

摘要： A dielectric film capacitor includes a lower electrode having an opening and formed of a material including platinum, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film. The planar area of the lower electrode is 50% or more of the area of a formation region of the dielectric film. A dielectric film capacitor includes a lower electrode formed of a material including platinum and having a thickness of 10 to 100 nm, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film.

摘要翻译： 电介质膜电容器包括具有开口并由包括铂的材料形成的下电极，设置在下电极上并包括具有ABOx晶体结构的氧化物的电介质膜和设置在电介质膜上的上电极。 下部电极的平面面积为电介质膜的形成区域的面积的50％以上。 电介质膜电容器包括由包括铂的材料形成的厚度为10至100nm的下电极，设置在下电极上并包括具有ABOx晶体结构的氧化物的电介质膜，以及设置在电介质上的上电极 电影。

公开(公告)号：US07994443B2

公开(公告)日：2011-08-09

申请号：US11886856

申请日：2006-03-20

申请人： Masato Hayashi ,  Masami Yakabe ,  Tetsuya Hasebe ,  Muneo Harada ,  Katsuya Okumura

发明人： Masato Hayashi ,  Masami Yakabe ,  Tetsuya Hasebe ,  Muneo Harada ,  Katsuya Okumura

IPC分类号： H01H1/00 ,  H01H9/00

CPC分类号： H01H1/0036 ,  B81B3/0054 ,  B81B2201/014 ,  B81B2203/053 ,  H01H1/24 ,  H01H37/46 ,  H01H67/22 ,  H01H2001/0042 ,  H01H2037/008

摘要： A first wiring layer 16 is disposed on an insulating film 14 on the lower surface of an upper substrate 15, while a second wiring layer 13three-dimensionally crossing the first wiring layer 16 is provided on the insulating film 12 on a lower substrate 11. A cantilever 17 has one end connected to the first wiring layer 16 and the other end opposed to the second wiring layer 13 with a space therebetween. A thermoplastic sheet 19 is arranged on the upper substrate 15 so as to cover the through-hole 18. The thermoplastic sheet 19 is pressed by a heated pin 20 against the cantilever 17 and deformed so as to maintain the connection between the cantilever 17and the second wiring layer 13, and therefore close the switch 10.

摘要翻译： 第一布线层16设置在上基板15的下表面上的绝缘膜14上，而在下基板11上的绝缘膜12上设置与第一布线层16三维交叉的第二布线层13。 悬臂17的一端与第一配线层16连接，另一端与第二配线层13相对置，而其间具有间隔。 热塑片19布置在上基板15上以覆盖通孔18.热塑片19被加热的销20压靠在悬臂17上并变形，从而保持悬臂17和第二个之间的连接 布线层13，因此闭合开关10。

公开(公告)号：US07742277B2

公开(公告)日：2010-06-22

申请号：US11508204

申请日：2006-08-23

申请人： Tomotaka Shinoda ,  Kinji Yamada ,  Takahiro Kitano ,  Yoshiki Yamanishi ,  Muneo Harada ,  Tatsuzo Kawaguchi ,  Yoshihiro Hirota ,  Katsuya Okumura ,  Shuichi Kawano

发明人： Tomotaka Shinoda ,  Kinji Yamada ,  Takahiro Kitano ,  Yoshiki Yamanishi ,  Muneo Harada ,  Tatsuzo Kawaguchi ,  Yoshihiro Hirota ,  Katsuya Okumura ,  Shuichi Kawano

IPC分类号： H01G4/06 ,  H01G4/005

CPC分类号： H01L28/65 ,  H01L27/11507 ,  H01L28/55 ,  Y10T29/435

摘要： A dielectric film capacitor includes a lower electrode having an opening and formed of a material including platinum, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film. The planar area of the lower electrode is 50% or more of the area of a formation region of the dielectric film. A dielectric film capacitor includes a lower electrode formed of a material including platinum and having a thickness of 10 to 100 nm, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film.

摘要翻译： 电介质膜电容器包括具有开口并由包括铂的材料形成的下电极，设置在下电极上并包括具有ABOx晶体结构的氧化物的电介质膜和设置在电介质膜上的上电极。 下部电极的平面面积为电介质膜的形成区域的面积的50％以上。 电介质膜电容器包括由包括铂的材料形成的厚度为10至100nm的下电极，设置在下电极上并包括具有ABOx晶体结构的氧化物的电介质膜，以及设置在电介质上的上电极 电影。

公开(公告)号：US20090045039A1

公开(公告)日：2009-02-19

申请号：US11886856

申请日：2006-03-20

申请人： Masato Hayashi ,  Masami Yakabe ,  Tetsuya Hasebe ,  Muneo Harada ,  Katsuya Okumura

发明人： Masato Hayashi ,  Masami Yakabe ,  Tetsuya Hasebe ,  Muneo Harada ,  Katsuya Okumura

IPC分类号： H01H9/00

CPC分类号： H01H1/0036 ,  B81B3/0054 ,  B81B2201/014 ,  B81B2203/053 ,  H01H1/24 ,  H01H37/46 ,  H01H67/22 ,  H01H2001/0042 ,  H01H2037/008

摘要： A first wiring layer 16 is disposed on an insulating film 14 on the lower surface of an upper substrate 15, while a second wiring layer 13 three-dimensionally crossing the first wiring layer 16 is provided on the insulating film 12 on a lower substrate 11. A cantilever 17 has one end connected to the first wiring layer 16 and the other end opposed to the second wiring layer 13 with a space therebetween. A thermoplastic sheet 19 is arranged on the upper substrate 15 so as to cover the through-hole 18. The thermoplastic sheet 19 is pressed by a heated pin 20 against the cantilever 17 and deformed so as to maintain the connection between the cantilever 17 and the second wiring layer 13, and therefore close the switch 10.

摘要翻译： 第一布线层16设置在上基板15的下表面上的绝缘膜14上，而在下基板11上的绝缘膜12上设置三维交叉第一布线层16的第二布线层13。 悬臂17的一端与第一配线层16连接，另一端与第二配线层13相对设置，其间具有间隔。 热塑片19被布置在上基板15上以覆盖通孔18.热塑片19被加热的销20压靠在悬臂17上并变形，从而保持悬臂17和 第二布线层13，因此闭合开关10。

公开(公告)号：US20070181556A1

公开(公告)日：2007-08-09

申请号：US11508156

申请日：2006-08-23

申请人： Yoshiki Yamanishi ,  Muneo Harada ,  Takahiro Kitano ,  Tatsuzo Kawaguchi ,  Yoshihiro Hirota ,  Kenji Matsuda ,  Kinji Yamada ,  Tomotaka Shinoda ,  Daohai Wang ,  Katsuya Okumura

发明人： Yoshiki Yamanishi ,  Muneo Harada ,  Takahiro Kitano ,  Tatsuzo Kawaguchi ,  Yoshihiro Hirota ,  Kenji Matsuda ,  Kinji Yamada ,  Tomotaka Shinoda ,  Daohai Wang ,  Katsuya Okumura

IPC分类号： F27B5/14

CPC分类号： H01L28/55

摘要： Atmosphere in processing apparatus is adjusted to, for example, oxygen atmosphere, by gas supply source and the like. Interior of thermal processing apparatus is set to oxygen atmosphere and raised to predetermined temperature. A wafer boat containing wafer W having dielectric precursor layer formed is loaded into thermal processing apparatus at speed at which no defects are produced in wafer W. Thereafter, reaction tube of thermal processing apparatus has its internal temperature raised to baking temperature, to perform baking for predetermined time. The wafer W is cooled to predetermined temperature in thermal processing apparatus and then to room temperature in processing apparatus, and carried out from processing apparatus. Before dielectric precursor layer is baked, it is maintained for predetermined time at temperature higher than temperature at which solvent in dielectric precursor layer is volatilized and lower than temperature at which dielectric precursor layer starts crystallization to vaporize residual solvent.

摘要翻译： 处理装置中的气氛通过气体供给源等调节为例如氧气氛。 热处理装置的内部设定为氧气氛并升温至规定温度。 包含形成有电介质前体层的晶片W的晶片舟以晶片W中没有产生缺陷的速度装载到热处理装置中。之后，热处理装置的反应管的内部温度升高到烘烤温度，进行烘烤 预定时间 将晶片W在热处理装置中冷却至规定温度，然后在处理装置中冷却至室温，并从处理装置进行。 在电介质前体层被烘烤之前，在高于电介质前体层中的溶剂挥发并且低于电介质前体层开始结晶以蒸发残留溶剂的温度的温度下将其保持预定时间。

公开(公告)号：US08247289B2

公开(公告)日：2012-08-21

申请号：US11508141

申请日：2006-08-23

申请人： Yoshiki Yamanishi ,  Muneo Harada ,  Takahiro Kitano ,  Tatsuzo Kawaguchi ,  Yoshihiro Hirota ,  Kinji Yamada ,  Tomotaka Shinoda ,  Katsuya Okumura ,  Shuichi Kawano

发明人： Yoshiki Yamanishi ,  Muneo Harada ,  Takahiro Kitano ,  Tatsuzo Kawaguchi ,  Yoshihiro Hirota ,  Kinji Yamada ,  Tomotaka Shinoda ,  Katsuya Okumura ,  Shuichi Kawano

IPC分类号： H01L21/8242 ,  H01L21/20 ,  H01L21/00

CPC分类号： H01L23/50 ,  H01G4/228 ,  H01G4/33 ,  H01L23/481 ,  H01L24/81 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01056 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H05K1/162 ,  H05K3/002 ,  H05K2201/09509 ,  H05K2201/096 ,  H05K2201/10378

摘要： A capacitor having a high quality and a manufacturing method of the same are provided.A capacitor has a lower electrode formed on an oxide film, a dielectric layer formed on the lower electrode, an upper electrode formed so as to face the lower electrode with the dielectric layer between, and an upper electrode formed so as to cover the upper electrode, an opening portion of the upper electrode and an opening portion of the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to pattern the dielectric layer by using the upper electrode as a mask, and provide a capacitor having a high-quality dielectric layer by preventing impurity diffusion into the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to prevent the dielectric layer from being exposed to etching liquid, liquid developer, etc.

摘要翻译： 提供了具有高质量的电容器及其制造方法。 电容器具有形成在氧化膜上的下电极，形成在下电极上的电介质层，形成为与电极之间介电层相对的下电极的上电极和形成为覆盖上电极的上电极 ，上电极的开口部分和电介质层的开口部分。 通过在电介质层上形成上电极，可以通过使用上电极作为掩模对电介质层进行图案化，并且通过防止杂质扩散到电介质层中来提供具有高质量电介质层的电容器。 通过在电介质层上形成上部电极，可以防止电介质层暴露于蚀刻液体，液体显影剂等