公开(公告)号：US07585386B2

公开(公告)日：2009-09-08

申请号：US11195803

申请日：2005-08-03

申请人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

发明人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01L21/3065 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32541

摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

摘要翻译： 用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的​​处理容器。 第一电极设置在处理容器内。 供应系统被配置为将处理气体供应到处理容器中。 电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。 多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

公开(公告)号：US20090285998A1

公开(公告)日：2009-11-19

申请号：US12505940

申请日：2009-07-20

申请人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

发明人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

IPC分类号： C23C16/513 ,  C23C14/24 ,  C23C16/04 ,  B05D1/32

CPC分类号： H01L21/3065 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32541

摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

摘要翻译： 用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的​​处理容器。 第一电极设置在处理容器内。 供应系统被配置为将处理气体供应到处理容器中。 电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。 多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

公开(公告)号：US20050276928A1

公开(公告)日：2005-12-15

申请号：US11195803

申请日：2005-08-03

申请人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

发明人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C14/00 ,  C23F4/00 ,  C25D17/10 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

CPC分类号： H01L21/3065 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32541

摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

摘要翻译： 用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的​​处理容器。 第一电极设置在处理容器内。 供应系统被配置为将处理气体供应到处理容器中。 电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。 多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

公开(公告)号：US07922862B2

公开(公告)日：2011-04-12

申请号：US12505940

申请日：2009-07-20

申请人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

发明人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

IPC分类号： H01L21/00 ,  C23C14/00 ,  C23C16/00

CPC分类号： H01L21/3065 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32541

摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

摘要翻译： 用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的​​处理容器。 第一电极设置在处理容器内。 供应系统被配置为将处理气体供应到处理容器中。 电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。 多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

公开(公告)号：US07104217B2

公开(公告)日：2006-09-12

申请号：US10273000

申请日：2002-10-18

申请人： Shinji Himori ,  Toshiki Takahashi ,  Takumi Komatsu

发明人： Shinji Himori ,  Toshiki Takahashi ,  Takumi Komatsu

IPC分类号： C23C16/00 ,  C23C14/34 ,  H01L21/306

CPC分类号： H01J37/32082 ,  H01J37/32532

摘要： The present invention provides a plasma processing apparatus having an electrode plate arranging therein, an upper electrode to which a dielectric member or a cavity portion is provided, a dimension or a dielectric constant of which is determined in such a manner that resonance is generated at a frequency of high-frequency power supplied to the center of the back side and an electric field orthogonal to the electrode plate is generated, and a susceptor as a lower electrode so as to be opposed to each other, in order to reduce unevenness of an electric field distribution on the surface of the electrode in a plasma processing using a high-density plasma capable of coping with further refinement.

公开(公告)号：US06915760B2

公开(公告)日：2005-07-12

申请号：US10273000

申请日：2002-10-18

申请人： Shinji Himori ,  Toshiki Takahashi ,  Takumi Komatsu

发明人： Shinji Himori ,  Toshiki Takahashi ,  Takumi Komatsu

摘要： The present invention provides a plasma processing apparatus having an electrode plate arranging therein, an upper electrode to which a dielectric member or a cavity portion is provided, a dimension or a dielectric constant of which is determined in such a manner that resonance is generated at a frequency of high-frequency power supplied to the center of the back side and an electric field orthogonal to the electrode plate is generated, and a susceptor as a lower electrode so as to be opposed to each other, in order to reduce unevenness of an electric field distribution on the surface of the electrode in a plasma processing using a high-density plasma capable of coping with further refinement.

公开(公告)号：US08608902B2

公开(公告)日：2013-12-17

申请号：US12686060

申请日：2010-01-12

申请人： Kohei Fukushima ,  Toshiki Takahashi ,  Hiroyuki Matsuura ,  Yutaka Motoyama ,  Kazuya Yamamoto

发明人： Kohei Fukushima ,  Toshiki Takahashi ,  Hiroyuki Matsuura ,  Yutaka Motoyama ,  Kazuya Yamamoto

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： C23C16/345 ,  C23C16/4401 ,  C23C16/452 ,  H01J37/321 ,  H01J37/3244

摘要： A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field and confining a plasma generation area airtightly communicating with the process field, an ICP electrode disposed outside the plasma generation box and extending in a longitudinal direction of the plasma generation box, and an RF power supply connected to the ICP electrode. The ICP electrode includes a separated portion separated from a wall surface of the plasma generation box by a predetermined distance.

摘要翻译： 一次在一起对多个目标物体进行等离子体处理的垂直等离子体处理装置包括将处理气体转换为等离子体的启动机构。 激活机构包括垂直延长的等离子体生成箱，其在对应于处理场的位置处附接到处理容器，并限制与过程场气密地通信的等离子体产生区域; ICP电极，设置在等离子体生成箱的外部并且沿纵向延伸 等离子体生成箱的方向，以及与ICP电极连接的RF电源。 ICP电极包括与等离子体发生箱的壁面隔开预定距离的分离部分。

公开(公告)号：US20090078201A1

公开(公告)日：2009-03-26

申请号：US12277344

申请日：2008-11-25

申请人： Hiroyuki Matsuura ,  Toshiki Takahashi ,  Jun Sato ,  Katsuyoshi Aikawa ,  Katsutoshi Ishii

发明人： Hiroyuki Matsuura ,  Toshiki Takahashi ,  Jun Sato ,  Katsuyoshi Aikawa ,  Katsutoshi Ishii

IPC分类号： C23C16/505

CPC分类号： C23C16/45578 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574

摘要： A vertical plasma processing apparatus for a semiconductor process includes an airtight auxiliary chamber defined by a casing having an insulative inner surface and integrated with a process container. The auxiliary chamber includes a plasma generation area extending over a length corresponding to a plurality of target substrates in a vertical direction. A partition plate having an insulative surface is located between a process field and the plasma generation. The partition plate includes a gas passage disposed over a length corresponding to the plurality of target substrates in a vertical direction. A process gas is exited while passing through the plasma generation area, and is then supplied through the gas passage to the process field.

摘要翻译： 用于半导体工艺的垂直等离子体处理装置包括由具有绝缘内表面并与处理容器一体化的壳体限定的气密辅助室。 辅助室包括在垂直方向上在对应于多个目标基板的长度上延伸的等离子体产生区域。 具有绝缘表面的隔板位于处理场和等离子体产生之间。 隔板包括沿垂直方向设置在与多个目标基板相对应的长度上的气体通道。 在通过等离子体产生区域时排出处理气体，然后通过气体通道供给到处理区域。

公开(公告)号：US20090056877A1

公开(公告)日：2009-03-05

申请号：US12230468

申请日：2008-08-29

申请人： Hiroyuki Matsuura ,  Toshiki Takahashi ,  Kohei Fukushima

发明人： Hiroyuki Matsuura ,  Toshiki Takahashi ,  Kohei Fukushima

IPC分类号： C23F1/08 ,  C23C16/54

CPC分类号： H01J37/32532 ,  C23C16/345 ,  C23C16/452 ,  H01J37/321

摘要： A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field to form a plasma generation area airtightly communicating with the process field, an ICP electrode provided to the plasma generation box, and an RF power supply connected to the electrode.

摘要翻译： 一次在一起对多个目标物体进行等离子体处理的垂直等离子体处理装置包括将处理气体转换为等离子体的启动机构。 激活机构包括垂直延长的等离子体生成箱，其在对应于处理场的位置处附接到处理容器，以形成与过程场气密地连通的等离子体产生区域，提供给等离子体生成箱的ICP电极和RF功率 电源连接到电极。

公开(公告)号：US06644726B2

公开(公告)日：2003-11-11

申请号：US10230396

申请日：2002-08-29

申请人： Kanji Fujii ,  Toshiki Takahashi ,  Takaya Okuyama ,  Yoshimi Mizutani

发明人： Kanji Fujii ,  Toshiki Takahashi ,  Takaya Okuyama ,  Yoshimi Mizutani

IPC分类号： B60R2700

CPC分类号： B62D25/2072 ,  B60R19/48

摘要： In a vehicle rear body structure in which a muffler is disposed below a rear cross member disposed to extend transversely below a rear part of the body of a vehicle, a lower end portion 10 of the rear cross member 7 extends downwardly to substantially the same height of that of a lower end portion 4c of a rear bumper face 4a disposed rearward of the rear cross member. Accordingly, it is possible to prevent the generation of heat deformation by protecting from heat related effects from a muffler a lower end portion of a rear bumper which tends to easily heat deform.

摘要翻译： 在车辆后车体结构中，其中消音器设置在横向于车辆后部的后部延伸的后横梁的下方，后横梁7的下端部分10向下延伸到大致相同的高度 设置在后横梁的后方的后保险杠面4a的下端部分4c。 因此，通过防止来自消音器的热相关作用，能够防止发生热变形，后者的容易易发生变形的后保险杠的下端部。