-
公开(公告)号：US4954218A
公开(公告)日：1990-09-04
申请号：US389681
申请日：1989-08-04
申请人： Katsuya Okumura , Tohru Watanabe , Masami Watase
发明人： Katsuya Okumura , Tohru Watanabe , Masami Watase
IPC分类号： H01L21/302 , H01L21/033 , H01L21/208 , H01L21/3065 , H01L21/311 , H01L21/316 , H01L21/32 , H01L21/3213 , H01L21/768 , B44C1/22 , C03C15/00 , C03C25/06 , C23F1/02
CPC分类号： H01L21/76838 , H01L21/0332 , H01L21/0337 , H01L21/31144 , H01L21/316 , H01L21/32 , H01L21/32139 , H01L21/76802
摘要： A photoresist layer having a prescribed pattern is formed on a substrate to be etched. The substrate is immersed into a predetermined solution to form a layer on the substrate except on those portions where the photoresist layer is formed. The photoresist layer is removed, and the substrate is etched using the remaining layer as a mask.
-
公开(公告)号：US5489336A
公开(公告)日：1996-02-06
申请号：US329651
申请日：1994-10-25
申请人： Masako Kodera , Masami Watase , Shiro Mishima , Katsuya Okumura
发明人： Masako Kodera , Masami Watase , Shiro Mishima , Katsuya Okumura
IPC分类号： C01B33/12 , H01L21/00 , H01L21/316 , B05C3/00
CPC分类号： H01L21/67103
摘要： Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.
摘要翻译： 公开了一种在硅晶片上形成氧化硅膜的方法，包括以下步骤：在硅晶片的表面上将氧化硅的过饱和氢氟酸溶液保持在不超过20毫米的厚度，该溶液具有预定的 温度，加热过饱和溶液直到溶液达到热平衡，并且在预定时间内保持在过饱和溶液中建立热平衡的温度，以便在硅晶片的表面上形成氧化硅膜 。
-
公开(公告)号：US5395645A
公开(公告)日：1995-03-07
申请号：US928070
申请日：1992-08-11
申请人： Masako Kodera , Masami Watase , Shiro Mishima , Katsuya Okumura
发明人： Masako Kodera , Masami Watase , Shiro Mishima , Katsuya Okumura
IPC分类号： C01B33/12 , H01L21/00 , H01L21/316 , B05D1/00
CPC分类号： H01L21/67103
摘要： Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.
摘要翻译： 公开了一种在硅晶片上形成氧化硅膜的方法，包括以下步骤：在硅晶片的表面上将氧化硅的过饱和氢氟酸溶液保持在不超过20毫米的厚度，该溶液具有预定的 温度，加热过饱和溶液直到溶液达到热平衡，并且在预定时间内保持在过饱和溶液中建立热平衡的温度，以便在硅晶片的表面上形成氧化硅膜 。
-
公开(公告)号：US5536603A
公开(公告)日：1996-07-16
申请号：US359547
申请日：1994-12-20
摘要： A photoresist pattern is formed on a quartz substrate. The quartz substrate is dipped into a silicon oxide supersaturated solution of hydrofluoric acid, and a silicon oxide is precipitated out of the supersaturated solution, thereby forming an SiO.sub.2 film on that exposed surface of the quartz substrate which is not covered with the photoresist pattern. After that, the photoresist pattern is ashed by oxygen plasma, and the ashed pattern is removed. The SiO.sub.2 film remaining on the quartz substrate serves as a phase shifter.
摘要翻译： 光刻胶图案形成在石英基片上。 将石英衬底浸入氢氟酸的氧化硅过饱和溶液中，从过饱和溶液中沉淀出氧化硅，由此在未被光致抗蚀剂图案覆盖的石英衬底的暴露表面上形成SiO 2膜。 之后，通过氧等离子体将光致抗蚀剂图案灰化，除去灰化图案。 保留在石英衬底上的SiO 2膜用作移相器。
-
公开(公告)号：US20050069815A1
公开(公告)日：2005-03-31
申请号：US10916414
申请日：2004-08-12
IPC分类号： B23K26/18 , B23K26/00 , B23K26/02 , B23K101/40 , G03F7/00 , H01L21/00 , H01L21/027 , H01L21/302 , H01L21/311 , H01L21/3205 , H01L21/3213 , H01L23/544
CPC分类号： H01L23/544 , H01L21/0275 , H01L21/0276 , H01L21/31144 , H01L21/32139 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A processing method comprises forming a water-soluble protective film on a first film having a processing area above a substrate irradiating processing light on the processing area selectively with to selectively remove the first film in the processing area and the protective film on the processing area, and removing the protective film with water after the selective irradiating.
摘要翻译： 一种处理方法包括在选择性地在处理区域上在基板上照射处理光的处理区域上的第一膜上形成水溶性保护膜，以选择性地去除处理区域中的第一膜和处理区域上的保护膜， 并在选择性照射后用水除去保护膜。
-
公开(公告)号：US4434022A
公开(公告)日：1984-02-28
申请号：US512047
申请日：1983-07-08
申请人： Osao Kamada , Yoshiaki Matsuga , Masami Watase , Tadato Kudo , Hiroyoshi Harada , Atsushi Kanezaki
发明人： Osao Kamada , Yoshiaki Matsuga , Masami Watase , Tadato Kudo , Hiroyoshi Harada , Atsushi Kanezaki
IPC分类号： B32B15/08 , B32B38/00 , C25F3/02 , C25F7/00 , H05K3/07 , H05K3/38 , C23F1/00 , B44C1/22 , C03C15/00
CPC分类号： H05K3/383 , H05K2201/0355 , H05K3/07 , H05K3/386
摘要： A process for manufacturing a copper-clad laminate which includes a rolled copper foil as a circuit conductive material comprising, introducing a rolled copper foil through a power supply/guide roller into an electrolyte so as to pass between two parallel electrodes which are disposed in the electrolyte. An AC, DC or a combination thereof is supplied to the power supply/guide roller and the electrodes to form an etched layer on either one or both sides of the rolled copper foil. An adhesive is applied to the etched layer and the resultant rolled copper foil is pressed with a substrate made of a synthetic resin put together to form a laminate.
摘要翻译： 一种制造覆铜层压板的方法，其包括：作为电路导电材料的卷绕的铜箔，其包括：通过电源/引导辊将卷绕的铜箔引入电解质中，以便在布置在 电解液 将AC，DC或其组合提供给电源/引导辊和电极，以在轧制的铜箔的一侧或两侧上形成蚀刻层。 将粘合剂施加到蚀刻层，并将所得到的轧制铜箔用合成树脂制成的基板压制在一起形成层压体。
-
-
-
-
-
搜索结果
6 条记录 (耗时 0.016 秒)