公开(公告)号：US08629225B2

公开(公告)日：2014-01-14

申请号：US13040875

申请日：2011-03-04

申请人： Katsuyoshi Hoshino ,  Kazuki Takizawa ,  Katsuyuki Murashiro ,  Toshiki Komatsu

发明人： Katsuyoshi Hoshino ,  Kazuki Takizawa ,  Katsuyuki Murashiro ,  Toshiki Komatsu

IPC分类号： C08F26/06

CPC分类号： C08G61/124 ,  C08G2261/3241 ,  C08G2261/44

摘要： A poly(N-alkylcarbazole) columnar structure having electroconductivity is provided. The poly(N-alkylcarbazole) columnar structure having electroconductivity may be produced by electrolytically polymerizing an N-alkylcarbazole in a particular solvent.

摘要翻译： 提供具有导电性的聚（N-烷基咔唑）柱状结构。 具有导电性的聚（N-烷基咔唑）柱状结构可以通过在特定溶剂中电解聚合N-烷基咔唑来制备。

公开(公告)号：US20110293854A1

公开(公告)日：2011-12-01

申请号：US13147891

申请日：2010-01-28

申请人： Kazuki Takizawa

发明人： Kazuki Takizawa

IPC分类号： C23C16/52 ,  C23C16/50 ,  C23C16/455

CPC分类号： H01J37/32972 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/52 ,  H01J37/32935 ,  H01J37/3299 ,  H01L21/02178 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L22/12 ,  H01L22/26

摘要： An atomic layer growing apparatus introduces an organic metal gas containing hydrogen to a deposition vessel to cause an organic metal component to be adsorbed on a substrate. Then, the apparatus introduces an oxidizing gas or a nitriding gas to the deposition vessel to generate plasma, thereby oxidizing or nitriding the organic metal component deposited on the substrate. When the plasma is generated, the apparatus detects emission intensity of a predetermined wavelength of light emitted on the substrate through an observation window provided in the deposition vessel. When the detected emission intensity becomes a predetermined value or less, the apparatus stops the generation of the plasma.

摘要翻译： 原子层生长装置将含有氢的有机金属气体引入沉积容器，使有机金属成分吸附在基板上。 然后，该设备向沉积容器引入氧化气体或氮化气体以产生等离子体，从而氧化或氮化沉积在基底上的有机金属成分。 当产生等离子体时，该装置通过设置在沉积容器中的观察窗来检测在基板上发射的预定波长的光的发射强度。 当检测到的发射强度成为规定值以下时，停止等离子体的产生。

公开(公告)号：US20130104803A1

公开(公告)日：2013-05-02

申请号：US13582616

申请日：2011-02-21

申请人： Kazuki Takizawa ,  Naomasa Miyatake ,  Kazutoshi Murata

发明人： Kazuki Takizawa ,  Naomasa Miyatake ,  Kazutoshi Murata

IPC分类号： H01L31/20

CPC分类号： H01L31/202 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/3211 ,  H01J37/32541 ,  Y02E10/50 ,  Y02P70/521

摘要： The thin-film forming apparatus includes: a deposition vessel that includes a deposition space in which the thin film is formed on the substrate in a reduced-pressure state; a raw material gas introducing section configured to introduce a raw material gas for the thin-film into the deposition space of the deposition vessel; and a plasma electrode section configured to generate plasma using the raw material gas for the thin-film in the deposition space. The plasma electrode section is a plate member in which a current flows from one end surface to the other end surface, the plate member provided with, as a plasma generating electrode, an electrode plate including an outward portion and a return portion which allow the current to flow in parallel to each other by bending a direction of the current flowing through the plate member in mid-flow.

摘要翻译： 薄膜形成装置包括：沉积容器，其包括在减压状态下在基板上形成薄膜的沉积空间; 原料气体导入部，其将用于所述薄膜的原料气体引入所述沉积容器的所述沉积空间; 以及等离子体电极部，被配置为使用沉积空间中的薄膜的原料气体产生等离子体。 等离子体电极部是电流从一端面向另一端面流动的板状部件，作为等离子体产生电极设置有包括向外部分和返回部分的电极板的板部件，其允许电流 通过在中流动中弯曲流过板构件的电流的方向来彼此平行地流动。

公开(公告)号：US08214173B2

公开(公告)日：2012-07-03

申请号：US12593410

申请日：2008-03-24

申请人： Kazuki Takizawa

发明人： Kazuki Takizawa

IPC分类号： G01K11/00

CPC分类号： H05H1/0043 ,  G01J3/443 ,  H01J37/32926 ,  H01J37/32954 ,  H01J37/32972

摘要： A laser beam with a wavelength capable of exciting atoms of helium in the metastable state is directed to a generated plasma, and atoms in the metastable state are excited. Absorption amount information representing the amount of laser beam absorbed is acquired, and the density of atoms of helium in the metastable state in the plasma is computed from the absorption amount. The emissions of light from helium gas in the plasma caused by transition from two different excited states to the lower level are measured, and the ratio between the intensities of the emissions is determined. The electron temperature of the produced plasma is computed from the computed density of the atoms of helium gas in the metastable state and the computed emission intensity ratio. With this, the plasma electron temperature can be computed with a relatively high accuracy irrespective of the condition of the plasma atmosphere.

摘要翻译： 具有能够激发亚稳态的氦原子的波长的激光束被引导到产生的等离子体，并且激发亚稳态的原子。 获取表示吸收的激光束的量的吸收量信息，根据吸收量计算等离子体中的亚稳态的氦原子的密度。 测量从两个不同的激发态转换到较低的等离子体所产生的等离子体中氦气的发射，确定发射强度之间的比值。 所产生的等离子体的电子温度是从亚稳态中氦气原子的计算密度和计算出的发射强度比计算的。 由此，与等离子体气氛的条件无关地，可以以相对高的精度计算等离子体电子温度。

公开(公告)号：US20100131226A1

公开(公告)日：2010-05-27

申请号：US12593410

申请日：2008-03-24

申请人： Kazuki Takizawa

发明人： Kazuki Takizawa

IPC分类号： G01K11/00 ,  G06F15/00 ,  G01K13/00 ,  G01N9/36

CPC分类号： H05H1/0043 ,  G01J3/443 ,  H01J37/32926 ,  H01J37/32954 ,  H01J37/32972

摘要： A laser beam with a wavelength capable of exciting atoms of helium in the metastable state is directed to a generated plasma, and atoms in the metastable state are excited. Absorption amount information representing the amount of laser beam absorbed is acquired, and the density of atoms of helium in the metastable state in the plasma is computed from the absorption amount. The emissions of light from helium gas in the plasma caused by transition from two different excited states to the lower level are measured, and the ratio between the intensities of the emissions is determined. The electron temperature of the produced plasma is computed from the computed density of the atoms of helium gas in the metastable state and the computed emission intensity ratio. With this, the plasma electron temperature can be computed with a relatively high accuracy irrespective of the condition of the plasma atmosphere.

摘要翻译： 具有能够激发亚稳态的氦原子的波长的激光束被引导到产生的等离子体，并且激发亚稳态的原子。 获取表示吸收的激光束的量的吸收量信息，根据吸收量计算等离子体中的亚稳态的氦原子的密度。 测量从两个不同的激发态转换到较低的等离子体所产生的等离子体中氦气的发射，确定发射强度之间的比值。 所产生的等离子体的电子温度是从亚稳态中氦气原子的计算密度和计算出的发射强度比计算的。 由此，与等离子体气氛的条件无关地，可以以相对高的精度计算等离子体电子温度。

公开(公告)号：US20110293853A1

公开(公告)日：2011-12-01

申请号：US13147878

申请日：2010-01-28

申请人： Kazuki Takizawa ,  Yasunari Mori ,  Kazutoshi Murata

发明人： Kazuki Takizawa ,  Yasunari Mori ,  Kazutoshi Murata

IPC分类号： C23C16/50 ,  C23C16/52 ,  C23C16/455

CPC分类号： C23C16/45544 ,  C23C16/45536 ,  C23C16/45557 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32449

摘要： A thin film forming apparatus controls pressures of a first internal space in a deposition vessel and a second internal space provided in the first internal space according to determined pressure conditions, respectively. The apparatus causes a source gas to flow onto a substrate in the second internal space and supplies a high-frequency power to a plasma source provided in the first internal space according to the pressure conditions, thereby generating plasma in the second internal space to form a thin film on the substrate.

摘要翻译： 薄膜形成装置分别根据确定的压力条件控制沉积容器中的第一内部空间的压力和设置在第一内部空间中的第二内部空间。 该装置使源气体流到第二内部空间中的基板上，并根据压力条件向设置在第一内部空间中的等离子体源提供高频电力，从而在第二内部空间中产生等离子体，形成 基材上的薄膜。

公开(公告)号：US20100095888A1

公开(公告)日：2010-04-22

申请号：US12531264

申请日：2008-03-28

申请人： Yasunari Mori ,  Kazuki Takizawa

发明人： Yasunari Mori ,  Kazuki Takizawa

IPC分类号： C23C16/52 ,  H05H1/46

CPC分类号： H01Q21/0006 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32183 ,  H01P5/12 ,  H01Q1/26 ,  H05H1/46

摘要： A plasma generating apparatus is provided with an impedance matching member, which is connected to a feeding line that supplies an antenna element with a high frequency signal, and has variable characteristic parameters for impedance matching; a distribution wire, which is arranged corresponding to the impedance matching member and connects the impedance matching member with at least two antenna elements; and a control section which changes at the same time impedance matching statuses of at least the two antenna elements connected to the impedance matching member through the distribution wire by changing the characteristic parameters of the impedance member. Thus, the number of impedance matching devices is smaller than that of the antenna elements, and a mechanism relating to impedance matching is made relatively small.

摘要翻译： 等离子体发生装置具有阻抗匹配部件，该阻抗匹配部件连接到向天线元件供给高频信号的馈电线路，并且具有用于阻抗匹配的可变特性参数; 配线，其布置成对应于所述阻抗匹配构件并将所述阻抗匹配构件与至少两个天线元件连接; 以及控制部，其通过改变阻抗部件的特性参数，通过分配线同时改变连接到阻抗匹配部件的至少两个天线元件的阻抗匹配状态。 因此，阻抗匹配装置的数量小于天线元件的数量，并且与阻抗匹配有关的机构相对较小。