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公开(公告)号：US20130104803A1
公开(公告)日：2013-05-02
申请号：US13582616
申请日：2011-02-21
IPC分类号： H01L31/20
CPC分类号： H01L31/202 , C23C16/5096 , H01J37/32091 , H01J37/3211 , H01J37/32541 , Y02E10/50 , Y02P70/521
摘要： The thin-film forming apparatus includes: a deposition vessel that includes a deposition space in which the thin film is formed on the substrate in a reduced-pressure state; a raw material gas introducing section configured to introduce a raw material gas for the thin-film into the deposition space of the deposition vessel; and a plasma electrode section configured to generate plasma using the raw material gas for the thin-film in the deposition space. The plasma electrode section is a plate member in which a current flows from one end surface to the other end surface, the plate member provided with, as a plasma generating electrode, an electrode plate including an outward portion and a return portion which allow the current to flow in parallel to each other by bending a direction of the current flowing through the plate member in mid-flow.
摘要翻译： 薄膜形成装置包括：沉积容器，其包括在减压状态下在基板上形成薄膜的沉积空间; 原料气体导入部，其将用于所述薄膜的原料气体引入所述沉积容器的所述沉积空间; 以及等离子体电极部，被配置为使用沉积空间中的薄膜的原料气体产生等离子体。 等离子体电极部是电流从一端面向另一端面流动的板状部件，作为等离子体产生电极设置有包括向外部分和返回部分的电极板的板部件，其允许电流 通过在中流动中弯曲流过板构件的电流的方向来彼此平行地流动。
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公开(公告)号：US07022545B2
公开(公告)日：2006-04-04
申请号：US10502537
申请日：2003-01-10
申请人： Isao Yamada , Jiro Matsuo , Noriaki Toyoda , Kazutoshi Murata , Naomasa Miyatake
发明人： Isao Yamada , Jiro Matsuo , Noriaki Toyoda , Kazutoshi Murata , Naomasa Miyatake
IPC分类号： H01L21/02 , H01L21/205 , B24C1/00 , C30B29/36
CPC分类号： C30B29/36 , C23C16/01 , C23C16/325 , C30B25/02 , C30B33/00 , Y10S438/931
摘要： The present invention has its object to obtain an SiC monitor wafer which can flatten the surface until particle detection is possible. SiC of a crystal system 3C is deposited on a substrate by a CVD (Chemical Vapor Deposition) method, and the SiC is detached from a substrate. After the SiC surface is flattened by using mechanical polishing alone or in combination with CMP (Chemo Mechanical Polishing), GCIB (Gas Cluster Ion Beam) is irradiated to the surface until the surface roughness becomes Ra=0.5 nm or less and the impurity density of the wafer surface becomes 1*1011 atoms/cm2 or less to produce the SiC monitor wafer.
摘要翻译： 本发明的目的是获得可以使表面变平的SiC监测晶片，直到可以进行粒子检测。 通过CVD（化学气相沉积）法将晶体系统3C的SiC沉积在衬底上，并且将SiC从衬底上分离。 在通过单独使用机械抛光或与CMP（Chemo Mechanical Polishing）组合使SiC表面平坦化之后，将GCIB（气体簇离子束）照射到表面，直到表面粗糙度变为Ra = 0.5nm以下，杂质浓度 晶片表面变为1×10 11原子/ cm 2或更小，以产生SiC监测晶片。
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公开(公告)号：US20110303147A1
公开(公告)日：2011-12-15
申请号：US13203381
申请日：2010-02-15
IPC分类号： C23C16/44 , C23C16/455
CPC分类号： C23C16/4409 , C23C16/4407 , C23C16/45544 , C23C16/4583 , C23C16/46 , C23C16/54
摘要： An atomic layer deposition apparatus for forming a thin film on a substrate, including a first container that defines a first inner space, a second container provided inside the first container to define a second inner space, the second container being canister-shaped and including a first opening at one end thereof, a source gas that forms the thin film on the substrate flowing to the second inner space through the first opening, and a pressing member including a gas supply port for supplying the source gas to the second inner space through the first opening, the pressing member being configured to press the second container in a longitudinal direction of the second container so that the second inner space be separated from the first inner space.
摘要翻译： 一种用于在基板上形成薄膜的原子层沉积装置，包括限定第一内部空间的第一容器，设置在第一容器内部以限定第二内部空间的第二容器，第二容器为罐形， 在其一端的第一开口，在通过第一开口流到第二内部空间的基板上形成薄膜的源气体，以及包括气体供给口的加压构件，该气体供给口用于通过该第二内部空间供给源气体， 第一开口，所述按压部件构造成沿着所述第二容器的长度方向按压所述第二容器，使得所述第二内部空间与所述第一内部空间分离。
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公开(公告)号：US09194043B2
公开(公告)日：2015-11-24
申请号：US13203381
申请日：2010-02-15
IPC分类号： C23C16/44 , C23C16/46 , C23C16/455 , C23C16/54 , C23C16/458
CPC分类号： C23C16/4409 , C23C16/4407 , C23C16/45544 , C23C16/4583 , C23C16/46 , C23C16/54
摘要： An atomic layer deposition apparatus for forming a thin film on a substrate, including a first container that defines a first inner space, a second container provided inside the first container to define a second inner space, the second container being canister-shaped and including a first opening at one end thereof, a source gas that forms the thin film on the substrate flowing to the second inner space through the first opening, and a pressing member including a gas supply port for supplying the source gas to the second inner space through the first opening, the pressing member being configured to press the second container in a longitudinal direction of the second container so that the second inner space be separated from the first inner space.
摘要翻译： 一种用于在基板上形成薄膜的原子层沉积装置，包括限定第一内部空间的第一容器，设置在第一容器内部以限定第二内部空间的第二容器，第二容器为罐形， 在其一端的第一开口，在通过第一开口流到第二内部空间的基板上形成薄膜的源气体，以及包括气体供给口的加压构件，该气体供给口用于通过该第二内部空间供给源气体， 第一开口，所述按压部件构造成沿着所述第二容器的长度方向按压所述第二容器，使得所述第二内部空间与所述第一内部空间分离。
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公开(公告)号：US20090291232A1
公开(公告)日：2009-11-26
申请号：US12294428
申请日：2007-03-28
CPC分类号： C23C16/402 , C23C16/45542 , C23C16/5096 , H01L21/02164 , H01L21/02222 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/31612
摘要： Oxygen gas, for example, is introduced into a film forming chamber, and high-frequency power is supplied to a plurality of monopole antennas arranged above a silicon substrate (101) in the film forming chamber to generate a plasma of the introduced oxygen gas, thereby supplying atomic oxygen (123) onto the surface of an aminosilane molecular layer (102). This plasma generation is performed for about 1 sec. With this operation, the adsorption layer (102) adsorbed onto the surface of the silicon substrate (101) is oxidized, thereby forming a silicon oxide layer (112) corresponding to one atomic layer of silicon on the surface of the silicon substrate (101).
摘要翻译： 例如，将氧气引入成膜室，向成膜室内的硅基板（101）上方配置的多个单极天线供给高频电力，生成引入氧气的等离子体， 从而将原子氧（123）提供到氨基硅烷分子层（102）的表面上。 执行该等离子体生成约1秒。 通过该操作，吸附在硅衬底（101）的表面上的吸附层（102）被氧化，从而在硅衬底（101）的表面上形成对应于一个原子层硅的氧化硅层（112） 。
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公开(公告)号：US08440268B2
公开(公告)日：2013-05-14
申请号：US12294428
申请日：2007-03-28
IPC分类号： H05H1/24
CPC分类号： C23C16/402 , C23C16/45542 , C23C16/5096 , H01L21/02164 , H01L21/02222 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/31612
摘要： Oxygen gas, for example, is introduced into a film forming chamber, and high-frequency power is supplied to a plurality of monopole antennas arranged above a silicon substrate (101) in the film forming chamber to generate a plasma of the introduced oxygen gas, thereby supplying atomic oxygen (123) onto the surface of an aminosilane molecular layer (102). This plasma generation is performed for about 1 sec. With this operation, the adsorption layer (102) adsorbed onto the surface of the silicon substrate (101) is oxidized, thereby forming a silicon oxide layer (112) corresponding to one atomic layer of silicon on the surface of the silicon substrate (101).
摘要翻译： 例如，将氧气引入成膜室，向成膜室内的硅基板（101）上方配置的多个单极天线供给高频电力，生成引入氧气的等离子体， 从而将原子氧（123）提供到氨基硅烷分子层（102）的表面上。 执行该等离子体生成约1秒。 通过该操作，吸附在硅衬底（101）的表面上的吸附层（102）被氧化，从而在硅衬底（101）的表面上形成对应于一个原子层硅的氧化硅层（112） 。
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公开(公告)号：US20050042800A1
公开(公告)日：2005-02-24
申请号：US10502537
申请日：2003-01-10
申请人： Isao Yamada , Jiro Matsuo , Noriaki Toyoda , Kazutoshi Murata , Naomasa Miyatake
发明人： Isao Yamada , Jiro Matsuo , Noriaki Toyoda , Kazutoshi Murata , Naomasa Miyatake
IPC分类号： C23C16/01 , C23C16/32 , C30B25/02 , C30B29/36 , C30B33/00 , C30B33/12 , H01L21/02 , H01L21/205 , H01L21/00 , H01L21/30 , H01L21/46
CPC分类号： C30B29/36 , C23C16/01 , C23C16/325 , C30B25/02 , C30B33/00 , Y10S438/931
摘要： The present invention has its object to obtain an SiC monitor wafer which can flatten the surface until particle detection is possible. SiC of a crystal system 3C is deposited on a substrate by a CVD (Chemical Vapor Deposition) method, and the SiC is detached from a substrate. After the SiC surface is flattened by using mechanical polishing alone or in combination with CMP (Chemo Mechanical Polishing), GCIB (Gas Cluster Ion Beam) is irradiated to the surface until the surface roughness becomes Ra=0.5 nm or less and the impurity density of the wafer surface becomes 1*1011 atoms/cm2 or less to produce the SiC monitor wafer.
摘要翻译： 本发明的目的是获得可以使表面变平的SiC监测晶片，直到可以进行粒子检测。 通过CVD（化学气相沉积）法将晶体系统3C的SiC沉积在衬底上，并且将SiC从衬底上分离。 在通过单独使用机械抛光或与CMP（Chemo Mechanical Polishing）组合使SiC表面平坦化之后，将GCIB（气体簇离子束）照射到表面，直到表面粗糙度变为Ra = 0.5nm以下，杂质浓度 晶片表面变为1×1011原子/ cm 2或更小以产生SiC监测晶片。
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公开(公告)号：US20110293853A1
公开(公告)日：2011-12-01
申请号：US13147878
申请日：2010-01-28
申请人： Kazuki Takizawa , Yasunari Mori , Kazutoshi Murata
发明人： Kazuki Takizawa , Yasunari Mori , Kazutoshi Murata
IPC分类号： C23C16/50 , C23C16/52 , C23C16/455
CPC分类号： C23C16/45544 , C23C16/45536 , C23C16/45557 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32449
摘要： A thin film forming apparatus controls pressures of a first internal space in a deposition vessel and a second internal space provided in the first internal space according to determined pressure conditions, respectively. The apparatus causes a source gas to flow onto a substrate in the second internal space and supplies a high-frequency power to a plasma source provided in the first internal space according to the pressure conditions, thereby generating plasma in the second internal space to form a thin film on the substrate.
摘要翻译： 薄膜形成装置分别根据确定的压力条件控制沉积容器中的第一内部空间的压力和设置在第一内部空间中的第二内部空间。 该装置使源气体流到第二内部空间中的基板上，并根据压力条件向设置在第一内部空间中的等离子体源提供高频电力，从而在第二内部空间中产生等离子体，形成 基材上的薄膜。
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公开(公告)号：US06995036B2
公开(公告)日：2006-02-07
申请号：US10478649
申请日：2002-05-24
IPC分类号： H01L21/00
CPC分类号： C30B23/02 , C30B29/36 , Y10T117/10
摘要： The present invention has its object to make it possible to produce an α-SiC wafer with stability and good reproducibility at low cost without using a seed crystal substrate that is expensive and less available. In each of crucibles 11a, 11b, 11c, and so on, a β-SiC substrate 19 and an SiC raw material 17 are placed to face each other in close proximity. These crucibles are stacked in layers, and placed inside a radiation tube 40. The radiation tube 40 is heated by an induction heating coil 23, radiates radiation heat, and uniformly heats the crucibles 11a, 11b, 11c and so on. The SiC raw material in each of the crucibles is sublimated and recrystallized on a surface of the β-SiC substrate 19.
摘要翻译： 本发明的目的是使得可以以低成本制造具有稳定性和良好重现性的α-SiC晶片，而不使用昂贵且不太可用的晶种基底。 在每个坩埚11a，11b，11c等中，将β-SiC衬底19和SiC原料17彼此靠近放置。 这些坩埚堆叠成层，放置在辐射管40的内部。 辐射管40由感应加热线圈23加热，辐射辐射热，并均匀加热坩埚11a，11b，11c等。 在每个坩埚中的SiC原料在β-SiC衬底19的表面上升华并重结晶。
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公开(公告)号：US20060097266A1
公开(公告)日：2006-05-11
申请号：US10520141
申请日：2003-06-30
IPC分类号： H01L31/0312
CPC分类号： C30B29/36 , C30B33/06 , H01L21/0445 , H01L29/0657 , H01L29/1608
摘要： From the viewpoint of manufacturing an SiC semiconductor device economically, a present Si device manufacturing line is utilized to make it possible to handle a small-diameter SiC wafer. Polycrystal SiC is grown from at least one surface side of a small-diameter a-SiC single crystal wafer so as to be in a size of an outer diameter corresponding to a handling device of an existing semiconductor manufacturing line, and thereafter the polycrystal SiC on the surface of the α-SiC single crystal wafer is ground to manufacture an increased-diameter SiC of a double structure in which the polycrystal SiC is grown around an outer circumference of the small-diameter α-SiC single crystal wafer.
摘要翻译： 从经济地制造SiC半导体器件的观点出发，利用现有的Si器件制造线可以处理小直径的SiC晶片。 多晶SiC从小直径a-SiC单晶晶片的至少一个表面侧生长成与现有半导体制造线的处理装置相对应的外径尺寸，然后将多晶SiC开 将α-SiC单晶晶片的表面研磨以制造双结构的增加直径的SiC，其中多晶SiC围绕小直径α-SiC单晶晶片的外周生长。
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