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    Epitaxial deposition process and apparatus
    5.
    发明授权
    Epitaxial deposition process and apparatus 失效
    外延沉积工艺和设备

    公开(公告)号：US07494545B2

    公开(公告)日：2009-02-24

    申请号：US11346804

    申请日：2006-02-03

    申请人： Andrew Lam ,  Yihwan Kim ,  Satheesh Kuppurao ,  See-Eng Phan ,  Xinliang Lu ,  Chien-Teh Kao

    发明人： Andrew Lam ,  Yihwan Kim ,  Satheesh Kuppurao ,  See-Eng Phan ,  Xinliang Lu ,  Chien-Teh Kao

    IPC分类号： C30B25/12

    CPC分类号： C23C16/452 ,  C23C16/0236 ,  C23C16/505 ,  H01L21/31116 ,  H01L21/67069

    摘要： An epitaxial deposition process including a dry etch process, followed by an epitaxial deposition process is disclosed. The dry etch process involves placing a substrate to be cleaned into a processing chamber to remove surface oxides. A gas mixture is introduced into a plasma cavity, and the gas mixture is energized to form a plasma of reactive gas in the plasma cavity. The reactive gas enters into the processing chamber and reacts with the substrate, forming a thin film. The substrate is heated to vaporize the thin film and expose an epitaxy surface. The epitaxy surface is substantially free of oxides. Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.

    摘要翻译： 公开了一种外延沉积工艺，其包括干蚀刻工艺，随后进行外延沉积工艺。 干蚀刻工艺涉及将要清洗的基底放置在处理室中以去除表面氧化物。 将气体混合物引入等离子体空腔中，并且气体混合物被激发以在等离子体腔中形成反应气体的等离子体。 反应气体进入处理室并与基板反应，形成薄膜。 将衬底加热以蒸发薄膜并暴露外延表面。 外延表面基本上不含氧化物。 然后使用外延沉积在外延表面上形成外延层。

    Epitaxial deposition process and apparatus
    6.
    发明申请
    Epitaxial deposition process and apparatus 失效
    外延沉积工艺和设备

    公开(公告)号：US20070181057A1

    公开(公告)日：2007-08-09

    申请号：US11346804

    申请日：2006-02-03

    申请人： Andrew Lam ,  Yihwan Kim ,  Satheesh Kuppurao ,  See-Eng Phan ,  Xinliang Lu ,  Chien-Teh Kao

    发明人： Andrew Lam ,  Yihwan Kim ,  Satheesh Kuppurao ,  See-Eng Phan ,  Xinliang Lu ,  Chien-Teh Kao

    IPC分类号： C30B23/00 ,  C23C16/00 ,  C30B25/00 ,  C30B28/14

    CPC分类号： C23C16/452 ,  C23C16/0236 ,  C23C16/505 ,  H01L21/31116 ,  H01L21/67069

    摘要： An epitaxial deposition process including a dry etch process, followed by an epitaxial deposition process is disclosed. The dry etch process involves placing a substrate to be cleaned into a processing chamber to remove surface oxides. A gas mixture is introduced into a plasma cavity, and the gas mixture is energized to form a plasma of reactive gas in the plasma cavity. The reactive gas enters into the processing chamber and reacts with the substrate, forming a thin film. The substrate is heated to vaporize the thin film and expose an epitaxy surface. The epitaxy surface is substantially free of oxides. Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.

    摘要翻译： 公开了一种外延沉积工艺，其包括干蚀刻工艺，随后进行外延沉积工艺。 干蚀刻工艺涉及将要清洗的基底放置在处理室中以去除表面氧化物。 将气体混合物引入等离子体空腔中，并且气体混合物被激发以在等离子体腔中形成反应气体的等离子体。 反应气体进入处理室并与基板反应，形成薄膜。 将衬底加热以蒸发薄膜并暴露外延表面。 外延表面基本上不含氧化物。 然后使用外延沉积在外延表面上形成外延层。