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    Inspection method for lithography
    1.
    发明授权
    Inspection method for lithography 有权
    光刻检验方法

    公开(公告)号：US09494872B2

    公开(公告)日：2016-11-15

    申请号：US13060390

    申请日：2009-09-08

    申请人： Kaustuve Bhattacharyya ,  Arie Jeffrey Den Boef ,  Marcus Adrianus Van De Kerkhof ,  Maurits Van Der Schaar

    发明人： Kaustuve Bhattacharyya ,  Arie Jeffrey Den Boef ,  Marcus Adrianus Van De Kerkhof ,  Maurits Van Der Schaar

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70633 ,  G03F7/70625

    摘要： The present invention relates to an inspection apparatus and method which include projecting a measurement radiation beam onto a target on a substrate in order to measure the radiation reflected from the target and obtain information related to properties of the substrate. In the present embodiments, the measurement spot, which is the focused beam on the substrate, is larger than the target. Information regarding the radiation reflected from the target is kept and information regarding the radiation reflected from the surface around the target is eliminated. This is done either by having no reflecting (or no specularly reflecting) surfaces around the target or by having known structures around the target, the information from which may be recognized and removed from the total reflected beam. The reflected beam is measured in the pupil plane of the projector such that the information obtained is related to diffraction orders of the reflected beam and profile, critical dimension or overlay of structures on the substrate may be determined.

    摘要翻译： 本发明涉及一种检查装置和方法，其包括将测量辐射束投射到基板上的目标上，以便测量从目标反射的辐射，并获得与基板的特性有关的信息。 在本实施例中，作为基板上的聚焦光束的测量点大于目标。 关于从目标反射的辐射的信息被保留，并且关于从目标周围的表面反射的辐射的信息被消除。 这可以通过在靶周围没有反射（或没有镜面反射）表面或通过在靶周围具有已知结构来完成，可以从总反射光束识别和去除信息。 在投影仪的瞳平面中测量反射光束，使得所获得的信息与反射光束的衍射级和轮廓，基底上的结构的临界尺寸或重叠相关。

    Inspection Method For Lithography
    2.
    发明申请
    Inspection Method For Lithography 有权
    光刻检验方法

    公开(公告)号：US20110229830A1

    公开(公告)日：2011-09-22

    申请号：US13060390

    申请日：2009-09-08

    申请人： Kaustuve Bhattacharyya ,  Arie Jeffrey Den Boef ,  Marcus Adrianus Van De Kerkhof ,  Maurits Van Der Schaar

    发明人： Kaustuve Bhattacharyya ,  Arie Jeffrey Den Boef ,  Marcus Adrianus Van De Kerkhof ,  Maurits Van Der Schaar

    IPC分类号： G03F7/20 ,  G01N21/55 ,  G01B11/14 ,  G03B27/54

    CPC分类号： G03F7/70633 ,  G03F7/70625

    摘要： The present invention relates to an inspection apparatus and method which include projecting a measurement radiation beam onto a target on a substrate in order to measure the radiation reflected from the target and obtain information related to properties of the substrate. In the present embodiments, the measurement spot, which is the focused beam on the substrate, is larger than the target. Information regarding the radiation reflected from the target is kept and information regarding the radiation reflected from the surface around the target is eliminated. This is done either by having no reflecting (or no specularly reflecting) surfaces around the target or by having known structures around the target, the information from which may be recognized and removed from the total reflected beam. The reflected beam is measured in the pupil plane of the projector such that the information obtained is related to diffraction orders of the reflected beam and profile, critical dimension or overlay of structures on the substrate may be determined.

    摘要翻译： 本发明涉及一种检查装置和方法，其包括将测量辐射束投射到基板上的目标上，以便测量从目标反射的辐射，并获得与基板的特性有关的信息。 在本实施例中，作为基板上的聚焦光束的测量点大于目标。 关于从目标反射的辐射的信息被保留，并且关于从目标周围的表面反射的辐射的信息被消除。 这可以通过在靶周围没有反射（或没有镜面反射）表面或通过在靶周围具有已知结构来完成，可以从总反射光束识别和去除信息。 在投影仪的瞳平面中测量反射光束，使得所获得的信息与反射光束的衍射级和轮廓，基底上的结构的临界尺寸或重叠相关。

    Method and apparatus for measuring line end shortening, substrate and patterning device
    3.
    发明授权
    Method and apparatus for measuring line end shortening, substrate and patterning device 有权
    用于测量线端缩短的方法和装置，基板和图案形成装置

    公开(公告)号：US08982329B2

    公开(公告)日：2015-03-17

    申请号：US12933806

    申请日：2009-04-22

    申请人： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Marcus Adrianus Van De Kerkhof

    发明人： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Marcus Adrianus Van De Kerkhof

    IPC分类号： G03B27/32 ,  G01B11/14 ,  G03F7/20 ,  G01N21/956 ,  G03F1/00 ,  G03F1/44

    CPC分类号： G03F7/70683 ,  G01N21/95607 ,  G03F1/0092 ,  G03F1/14 ,  G03F1/44 ,  G03F1/84 ,  G03F7/70625 ,  G03F7/70641

    摘要： End of line effect can occur during manufacture of components using a lithographic apparatus. These end of line effects can result in line end shortening of the features being manufactured. Such line end shortening may have an adverse impact on the component being manufactured. It is therefore desirable to predict and/or monitor the line end shortening. A test pattern is provided that has two separate areas such that, as designed, when the two areas are illuminated with radiation (for example from an angle-resolved scatterometer) they result in diffused radiation with asymmetry that is equal in sign to each other, but opposite in magnitude. When the test pattern is actually manufactured, line end shortening occurs, and so the asymmetry of the two areas are not equal and opposite. From the measured asymmetry of the manufactured test pattern, the amount of line end shortening that has occurred can be estimated.

    摘要翻译： 在使用光刻设备的部件的制造期间可能发生线路效应的结束。 这些线路效应的结束可能导致正在制造的功能的线端缩短。 这种线端缩短可能对正在制造的部件产生不利影响。 因此，希望预测和/或监视线端缩短。 提供了具有两个独立区域的测试图案，使得如设计的那样，当两个区域被辐射照射时（例如，从角度分辨的散射仪）照射，它们导致具有彼此相等的不对称性的漫射辐射， 但在数量上相反。 当实际制造测试图形时，发生线端缩短，因此两个区域的不对称性不相等。 根据制造的测试图案的测量不对称性，可以估计发生的线端缩短量。

    Method and Apparatus for Measuring Line End Shortening, Substrate and Patterning Device
    4.
    发明申请
    Method and Apparatus for Measuring Line End Shortening, Substrate and Patterning Device 有权
    测量线端缩短，基板和图案化装置的方法和装置

    公开(公告)号：US20110109888A1

    公开(公告)日：2011-05-12

    申请号：US12933806

    申请日：2009-04-22

    申请人： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Marcus Adrianus Van De Kerkhof

    发明人： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Marcus Adrianus Van De Kerkhof

    IPC分类号： G03B27/42 ,  G01N21/47

    CPC分类号： G03F7/70683 ,  G01N21/95607 ,  G03F1/0092 ,  G03F1/14 ,  G03F1/44 ,  G03F1/84 ,  G03F7/70625 ,  G03F7/70641

    摘要： End of line effect can occur during manufacture of components using a lithographic apparatus. These end of line effects can result in line end shortening of the features being manufactured. Such line end shortening may have an adverse impact on the component being manufactured. It is therefore desirable to predict and/or monitor the line end shortening. A test pattern is provided that has two separate areas such that, as designed, when the two areas are illuminated with radiation (for example from an angle-resolved scatterometer) they result in diffused radiation with asymmetry that is equal in sign to each other, but opposite in magnitude. When the test pattern is actually manufactured, line end shortening occurs, and so the asymmetry of the two areas are not equal and opposite. From the measured asymmetry of the manufactured test pattern, the amount of line end shortening that has occurred can be estimated.

    摘要翻译： 在使用光刻设备的部件的制造期间可能发生线路效应的结束。 这些线路效应的结束可能导致正在制造的功能的线端缩短。 这种线端缩短可能对正在制造的部件产生不利影响。 因此，希望预测和/或监视线端缩短。 提供了具有两个独立区域的测试图案，使得如设计的那样，当两个区域被辐射照射时（例如，从角度分辨的散射仪）照射，它们导致具有彼此相等的不对称性的漫射辐射， 但在数量上相反。 当实际制造测试图形时，发生线端缩短，因此两个区域的不对称性不相等。 根据制造的测试图案的测量不对称性，可以估计发生的线端缩短量。

    Method and Apparatus for Determining an Overlay Error
    5.
    发明申请
    Method and Apparatus for Determining an Overlay Error 有权
    确定叠加误差的方法和装置

    公开(公告)号：US20120013881A1

    公开(公告)日：2012-01-19

    申请号：US13181932

    申请日：2011-07-13

    申请人： Arie Jeffrey Den Boef ,  Maurits VAN DER SCHAAR ,  Andreas Fuchs ,  Martyn John Coogans ,  Kaustuve Bhattacharyya ,  Stephen Peter Morgan ,  Michael Kubis

    发明人： Arie Jeffrey Den Boef ,  Maurits VAN DER SCHAAR ,  Andreas Fuchs ,  Martyn John Coogans ,  Kaustuve Bhattacharyya ,  Stephen Peter Morgan ,  Michael Kubis

    IPC分类号： G03B27/54 ,  G06F19/00 ,  G01N21/47

    CPC分类号： A01H1/06 ,  A01G22/00 ,  C12N15/8201 ,  G03B27/52 ,  G03B27/53 ,  G03F7/705 ,  G03F7/70633

    摘要： A method of determining an overlay error. Measuring an overlay target having process-induced asymmetry. Constructing a model of the target. Modifying the model, e.g., by moving one of the structures to compensate for the asymmetry. Calculating an asymmetry-induced overlay error using the modified model. Determining an overlay error in a production target by subtracting the asymmetry-induced overlay error from a measured overlay error. In one example, the model is modified by varying asymmetry p(n′), p(n″) and the calculating an asymmetry-induced overlay error is repeated for a plurality of scatterometer measurement recipes and the step of determining an overlay error in a production target uses the calculated asymmetry-induced overlay errors to select an optimum scatterometer measurement recipe used to measure the production target.

    摘要翻译： 确定重叠错误的方法。 测量具有过程引起的不对称性的覆盖目标。 构建目标模型。 修改模型，例如通过移动结构之一来补偿不对称性。 使用修改的模型计算不对称引起的覆盖误差。 通过从测量的重叠错误中减去不对称引起的覆盖误差来确定生产目标中的重叠错误。 在一个示例中，通过改变不对称p（n'），p（n“）来修改模型，并且针对多个散射仪测量配方重复计算不对称引起的重叠误差，并且确定在 生产目标使用计算的不对称引起的重叠误差来选择用于测量生产目标的最佳散射仪测量配方。

    Inspection apparatus and method for measuring a property of a substrate
    10.
    发明授权
    Inspection apparatus and method for measuring a property of a substrate 有权
    用于测量基板的性质的检查装置和方法

    公开(公告)号：US09235141B2

    公开(公告)日：2016-01-12

    申请号：US13186895

    申请日：2011-07-20

    申请人： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Everhardus Cornelis Mos ,  Andreas Fuchs ,  Martyn John Coogans ,  Hendrik Jan Hidde Smilde

    发明人： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Everhardus Cornelis Mos ,  Andreas Fuchs ,  Martyn John Coogans ,  Hendrik Jan Hidde Smilde

    IPC分类号： G03F7/20 ,  G01N21/95 ,  G01N21/956 ,  G03F9/00 ,  G01N21/47

    CPC分类号： G03F7/70633 ,  G01B2210/56 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/95607 ,  G03F7/70616 ,  G03F9/70

    摘要： An inspection apparatus measures a property of a substrate including a periodic structure. An illumination system provides a beam of radiation with an illumination profile including a plurality of illuminated portions. A radiation projector projects the beam of radiation onto the substrate. A detector detects radiation scattered from the periodic structure and separately detects first order diffracted radiation and at least one higher order of diffracted radiation of each of the illuminated portions. A processor determines the property of the substrate from the detected radiation. The plurality of illuminated portions are arranged such that first order diffracted radiation arising from one or more of the illuminated portions are not overlapped by zeroth order or first order diffracted radiation arising from any other of the illuminated portions. Furthermore, the plurality of illuminated portions are arranged such that first order diffracted radiation arising from the one or more of the illuminated portions are overlapped by at least one of the higher orders of diffracted radiation arising from any other of the illuminated portions.

    摘要翻译： 检查装置测量包括周期性结构的基板的性质。 照明系统提供具有包括多个照明部分的照明轮廓的辐射束。 辐射投影仪将辐射束投影到基板上。 检测器检测从周期性结构散射的辐射，并分别检测每个照明部分的一级衍射辐射和衍射辐射的至少一个高阶。 处理器根据检测到的辐射来确定衬底的性质。 多个照明部分被布置成使得从一个或多个被照射部分产生的一级衍射辐射不会被任何其他照明部分产生的零级或一级衍射辐射重叠。 此外，多个照明部分被布置成使得由一个或多个被照射部分产生的一阶衍射辐射与从任何其他照明部分产生的衍射辐射的较高阶数中的至少一个重叠。