Laser module
    2.
    发明授权
    Laser module 有权
    激光模块

    公开(公告)号:US07301975B2

    公开(公告)日:2007-11-27

    申请号:US10954244

    申请日:2004-10-01

    IPC分类号: H01S3/04

    CPC分类号: G02B6/4206 G02B6/4248

    摘要: In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, generation of organic volatile gas is suppressed in the container and life of the module is prolonged. In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm and whose life is 5500 hours or more, optical components whose organic volatile gas generation measured by GC/MS is 10 μg/g or less at 150° C. are positioned in the container. In addition, as an organic adhesive to fix the optical components such as a collimating lens is used an organic adhesive whose organic volatile gas generation measured by GC/MS is 300 μg/g or less at 15° C.

    摘要翻译: 在包含发光波长为350〜450nm的半导体激光装置的内部的气密密封容器的激光模块中,在容器中抑制有机挥发性气体的产生,延长了模块的使用寿命。 在发光波长为350〜450nm,寿命为5500小时以上的半导体激光装置的内部的气密密封容器的激光组件中,通过GC / MS测定的有机挥发性气体产生量为10mug / g, 在150℃下较少位于容器中。 此外,作为用于固定准直透镜等光学部件的有机粘合剂,使用通过GC / MS测定的有机挥发性气体产生在15℃下为300mug / g以下的有机粘合剂。

    Laser apparatus having protection member at light-emission end of multimode optical fiber
    5.
    发明授权
    Laser apparatus having protection member at light-emission end of multimode optical fiber 有权
    具有多模光纤的发光端的保护部件的激光装置

    公开(公告)号:US07101094B2

    公开(公告)日:2006-09-05

    申请号:US10670473

    申请日:2003-09-26

    IPC分类号: G02B6/36

    摘要: In a laser apparatus, a plurality of semiconductor laser elements respectively emit laser beams; a multimode optical fiber has a light-entrance end and a light-emission end; an optical condensing system collects the laser beams emitted from the plurality of semiconductor laser elements, and couples the collected laser beams to the light-entrance end of the multimode optical fiber; and a protection member is arranged at the light-emission end of the multimode optical fiber, protects the light-emission end from the atmosphere, and has a light-emission window located at at least a predetermined distance from the light-emission end.

    摘要翻译: 在激光装置中,多个半导体激光元件分别发射激光束; 多模光纤具有光入射端和发光端; 聚光系统收集从多个半导体激光元件发射的激光束,并将收集的激光束耦合到多模光纤的光入射端; 并且在多模光纤的发光端设置保护部件,将发光端保护于大气,并且具有位于与发光端至少预定距离的发光窗口。

    Multiplex laser-light source and exposure system
    6.
    发明授权
    Multiplex laser-light source and exposure system 失效
    多重激光光源和曝光系统

    公开(公告)号:US07068690B2

    公开(公告)日:2006-06-27

    申请号:US10615937

    申请日:2003-07-10

    IPC分类号: H01S3/04

    摘要: In a laser-light source: submounts each being made of a material having a thermal expansion coefficient of 3.5 to 6.0×10−6/° C. and having a thickness of 200 to 400 micrometers are separately formed on a heat-dissipation block made of copper or copper alloy; a single-cavity nitride-based semiconductor laser chips are respectively mounted junction-side-down on the corresponding submounts; an optical condenser system collects laser beams emitted from the semiconductor laser chips, and couples the collected laser beams to a multimode optical fiber. A bonding surface of each semiconductor laser chip is bonded to a bonding surface of a corresponding submount through a metalization layer and an Au—Sn eutectic solder layer each of which is divided into areas.

    摘要翻译: 在激光光源中,各自由热膨胀系数为3.5〜6.0×10 -6 /℃的材料制成的厚度为200〜400微米的基板分开形成在 由铜或铜合金制成的散热块; 单腔氮化物基半导体激光器芯片分别安装在相应的底座上并排安装; 光聚光系统收集从半导体激光芯片发射的激光束,并将收集的激光束耦合到多模光纤。 每个半导体激光器芯片的接合表面通过金属化层和Au-Sn共晶焊料层分别结合到相应的基座的接合表面上,每个区域分开。

    Laser module
    7.
    发明申请
    Laser module 有权
    激光模块

    公开(公告)号:US20050058167A1

    公开(公告)日:2005-03-17

    申请号:US10954244

    申请日:2004-10-01

    IPC分类号: G02B6/42 H01S5/022 G02B6/00

    CPC分类号: G02B6/4206 G02B6/4248

    摘要: In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, generation of organic volatile gas is suppressed in the container and life of the module is prolonged. In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm and whose life is 5500 hours or more, optical components whose organic volatile gas generation measured by GC/MS is 10 μg/g or less at 150° C. are positioned in the container. In addition, as an organic adhesive to fix the optical components such as a collimating lens is used an organic adhesive whose organic volatile gas generation measured by GC/MS is 300 μg/g or less at 15° C.

    摘要翻译: 在包含发光波长为350〜450nm的半导体激光装置的内部的气密密封容器的激光模块中,在容器中抑制有机挥发性气体的产生,延长了模块的使用寿命。 在发光波长为350〜450nm,寿命为5500小时以上的半导体激光装置的内部的气密密封容器的激光组件中,通过GC / MS测定的有机挥发性气体产生量为10mug / g, 在150℃下较少位于容器中。 此外,作为用于固定准直透镜等光学部件的有机粘合剂,使用通过GC / MS测定的有机挥发性气体产生在15℃下为300mug / g以下的有机粘合剂。

    Laser module
    8.
    发明授权
    Laser module 有权
    激光模块

    公开(公告)号:US07369586B2

    公开(公告)日:2008-05-06

    申请号:US10954245

    申请日:2004-10-01

    IPC分类号: H01S3/13

    摘要: In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, generation of organic volatile gas is suppressed in the container and life of the module is prolonged. In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, optical components whose organic volatile gas generation measured by GC/MS is 10 μg/g or less at 150° C. are positioned in the container. In addition, as an organic adhesive to fix the optical components such as a collimating lens is used an organic adhesive whose organic volatile gas generation measured by GC/MS is 100 μg/g or less at 150° C.

    摘要翻译: 在包含发光波长为350〜450nm的半导体激光装置的内部的气密密封容器的激光模块中,在容器中抑制有机挥发性气体的产生,延长了模块的使用寿命。 在包括发光波长为350〜450nm的半导体激光装置的内部的气密密封容器的激光模块中,通过GC / MS测定的有机挥发性气体的产生在150℃下为10mug / g以下的光学部件被定位 在容器中 此外,作为用于固定准直透镜等光学部件的有机粘合剂,使用通过GC / MS测定的有机挥发性气体产生在150℃下为100mug / g以下的有机粘合剂。

    Laser module
    9.
    发明申请
    Laser module 有权
    激光模块

    公开(公告)号:US20050074039A1

    公开(公告)日:2005-04-07

    申请号:US10954245

    申请日:2004-10-01

    摘要: In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, generation of organic volatile gas is suppressed in the container and life of the module is prolonged. In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, optical components whose organic volatile gas generation measured by GC/MS is 10 μg/g or less at 150° C. are positioned in the container. In addition, as an organic adhesive to fix the optical components such as a collimating lens is used an organic adhesive whose organic volatile gas generation measured by GC/MS is 100 μg/g or less at 150° C.

    摘要翻译: 在包含发光波长为350〜450nm的半导体激光装置的内部的气密密封容器的激光模块中,在容器中抑制有机挥发性气体的产生,延长了模块的使用寿命。 在包括发光波长为350〜450nm的半导体激光装置的内部的气密密封容器的激光模块中,通过GC / MS测定的有机挥发性气体的产生在150℃下为10mug / g以下的光学部件被定位 在容器中 此外,作为用于固定准直透镜等光学部件的有机粘合剂,使用通过GC / MS测定的有机挥发性气体产生在150℃下为100mug / g以下的有机粘合剂。

    PROCESS AND SYSTEM FOR LASER ANNEALING AND LASER-ANNEALED SEMICONDUCTOR FILM
    10.
    发明申请
    PROCESS AND SYSTEM FOR LASER ANNEALING AND LASER-ANNEALED SEMICONDUCTOR FILM 审中-公开
    激光退火和激光退火半导体膜的工艺和系统

    公开(公告)号:US20080105879A1

    公开(公告)日:2008-05-08

    申请号:US11865117

    申请日:2007-10-01

    IPC分类号: H01L29/04 H01L21/268 G21K5/00

    摘要: In a laser annealing process for transforming a noncrystalline semiconductor film into a laterally-crystallized film: irradiation of a region with laser light and a shift of the position of the region to be irradiated are repeated, where the shift is made so that each region to be irradiated contains a subregion of granular crystals produced by previous irradiation and a subregion of noncrystalline semiconductor material which has not yet been crystallized, and the shifted region is irradiated under such a condition that the granular crystals and the noncrystalline semiconductor material which are contained in the second region are transformed into lateral crystals without melting one or more regions of lateral crystals produced in the semiconductor film by previous irradiation.

    摘要翻译: 在将非晶半导体膜变形为横向结晶的膜的激光退火工序中,重复利用激光照射区域和照射区域的位置的移动, 被照射时含有由先前照射产生的粒状晶体的次级区域和尚未结晶化的非晶半导体材料的次级区域,并且在这样的条件下照射偏移区域,其中所述晶粒和非晶半导体材料包含在 第二区域转变为横向晶体,而不会熔化通过先前照射在半导体膜中产生的侧面晶体的一个或多个区域。