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    PROCESS AND SYSTEM FOR LASER ANNEALING AND LASER-ANNEALED SEMICONDUCTOR FILM
    1.
    发明申请
    PROCESS AND SYSTEM FOR LASER ANNEALING AND LASER-ANNEALED SEMICONDUCTOR FILM 审中-公开
    激光退火和激光退火半导体膜的工艺和系统

    公开(公告)号：US20080105879A1

    公开(公告)日：2008-05-08

    申请号：US11865117

    申请日：2007-10-01

    申请人： Teruhiko Kuramachi ,  Hiroshi Sunagawa ,  Hiroyuki Hiiro ,  Atsushi Tanaka

    发明人： Teruhiko Kuramachi ,  Hiroshi Sunagawa ,  Hiroyuki Hiiro ,  Atsushi Tanaka

    IPC分类号： H01L29/04 ,  H01L21/268 ,  G21K5/00

    CPC分类号： H01L21/02691 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/02686

    摘要： In a laser annealing process for transforming a noncrystalline semiconductor film into a laterally-crystallized film: irradiation of a region with laser light and a shift of the position of the region to be irradiated are repeated, where the shift is made so that each region to be irradiated contains a subregion of granular crystals produced by previous irradiation and a subregion of noncrystalline semiconductor material which has not yet been crystallized, and the shifted region is irradiated under such a condition that the granular crystals and the noncrystalline semiconductor material which are contained in the second region are transformed into lateral crystals without melting one or more regions of lateral crystals produced in the semiconductor film by previous irradiation.

    摘要翻译： 在将非晶半导体膜变形为横向结晶的膜的激光退火工序中，重复利用激光照射区域和照射区域的位置的移动， 被照射时含有由先前照射产生的粒状晶体的次级区域和尚未结晶化的非晶半导体材料的次级区域，并且在这样的条件下照射偏移区域，其中所述晶粒和非晶半导体材料包含在 第二区域转变为横向晶体，而不会熔化通过先前照射在半导体膜中产生的侧面晶体的一个或多个区域。

    SOLAR CELL AND SOLAR CELL MANUFACTURING METHOD
    2.
    发明申请
    SOLAR CELL AND SOLAR CELL MANUFACTURING METHOD 审中-公开
    太阳能电池和太阳能电池制造方法

    公开(公告)号：US20110290310A1

    公开(公告)日：2011-12-01

    申请号：US13116404

    申请日：2011-05-26

    申请人： Teruhiko KURAMACHI ,  Makoto Kikuchi ,  Takeshi Hama ,  Atsushi Tanaka ,  Youichi Hosoya

    发明人： Teruhiko KURAMACHI ,  Makoto Kikuchi ,  Takeshi Hama ,  Atsushi Tanaka ,  Youichi Hosoya

    IPC分类号： H01L31/06 ,  H01L31/18 ,  B82Y99/00

    CPC分类号： H01L31/035218 ,  B82Y20/00 ,  B82Y30/00 ,  H01L31/075 ,  Y02E10/548

    摘要： A solar cell capable of restricting carrier loss and yields higher energy conversion efficiency than was conventionally possible and a method of producing a solar cell enabling formation of a light absorbing layer containing quantum dots through a low-temperature process using a coating or printing method requiring no vacuum equipment or complicated apparatuses. The solar cell includes a light absorbing layer containing quantum dots in a matrix layer, and the light absorbing layer is connected to an N-type semiconductor layer on one side and to a P-type semiconductor layer on the other side. In the light absorbing layer, the quantum dots are made of nanocrystalline semiconductor and arranged 3-dimensionally uniformly enough and spaced regularly so that a plurality of wave functions lie on one another between adjacent quantum dots to form intermediate bands. The matrix layer is formed of amorphous IGZO.

    摘要翻译： 一种能够限制载流子损失并且产生比传统可能的更高的能量转换效率的太阳能电池，以及一种制造太阳能电池的方法，该太阳能电池能够通过使用不需要的涂层或印刷方法的低温工艺形成含有量子点的光吸收层 真空设备或复杂的设备。 太阳能电池包括在矩阵层中含有量子点的光吸收层，并且光吸收层连接到一侧的N型半导体层和另一侧的P型半导体层。 在光吸收层中，量子点由纳米晶体半导体制成，并且三维均匀地布置并且规则地间隔开，使得多个波函数彼此位于相邻量子点之间以形成中间带。 基体层由无定形IGZO形成。

    PROCESS FOR PRODUCING THIN-FILM DEVICE, AND DEVICES PRODUCED BY THE PROCESS
    3.
    发明申请
    PROCESS FOR PRODUCING THIN-FILM DEVICE, AND DEVICES PRODUCED BY THE PROCESS 审中-公开
    用于制造薄膜装置的方法以及由该方法生产的装置

    公开(公告)号：US20090035536A1

    公开(公告)日：2009-02-05

    申请号：US12181897

    申请日：2008-07-29

    申请人： Atsushi Tanaka ,  Kohei Higashi ,  Kenichi Umeda ,  Hiroshi Sunagawa ,  Katsuhiro Kohda

    发明人： Atsushi Tanaka ,  Kohei Higashi ,  Kenichi Umeda ,  Hiroshi Sunagawa ,  Katsuhiro Kohda

    IPC分类号： G03G7/00 ,  B05D3/00

    CPC分类号： H01L29/78603 ,  H01L29/66757 ,  Y10T428/24802

    摘要： In a process for producing a thin-film device, a thermal-buffer layer is formed over a substrate which contains a resin material as a main component, and a light-cutting layer is formed over at least a region of the substrate over which a non-monocrystalline film to be annealed is not to be formed, where the light-cutting layer prevents damage from short-wavelength light to the substrate by reducing a proportion of the short-wavelength light which reaches the substrate. Thereafter, the non-monocrystalline film which is to be annealed is formed in a pattern over the substrate having the thermal-buffer layer, and an inorganic film is formed by irradiating the non-monocrystalline film with the short-wavelength light so as to anneal the non-monocrystalline film.

    摘要翻译： 在制造薄膜器件的方法中，在包含树脂材料作为主要成分的衬底上形成热缓冲层，并且在衬底的至少一个区域上形成光切割层， 不要形成要退火的非单晶膜，其中通过减少到达基板的短波长光的比例，光切割层防止从短波长光到基板的损坏。 此后，将要退火的非单晶膜以具有热缓冲层的衬底上的图案形成，并且通过用短波长的光照射非单晶膜以形成无机膜，从而退火 非单晶膜。

    Controller and semiconductor system
    6.
    发明授权
    Controller and semiconductor system 有权
    控制器和半导体系统

    公开(公告)号：US09454197B2

    公开(公告)日：2016-09-27

    申请号：US13982385

    申请日：2011-01-28

    申请人： Atsushi Tanaka ,  Hiroshi Murakami

    发明人： Atsushi Tanaka ,  Hiroshi Murakami

    IPC分类号： G06F1/32 ,  G06F1/26 ,  G06F1/00 ,  H02M3/155 ,  H02M3/157

    CPC分类号： G06F1/28 ,  G06F1/26 ,  G06F1/266 ,  G06F1/32 ,  H02M3/155 ,  H02M3/157 ,  H02M3/158

    摘要： A controller is formed as one chip, and controls a voltage regulator that supplies a power supply voltage to a CPU. The controller includes: an input unit for receiving a monitor voltage for monitoring the power supply voltage applied to the CPU; a control unit for detecting that the power supply voltage is decreased to a target voltage by the monitor voltage with the voltage regulator being in OFF state in a discharge mode; and an output unit for outputting a result signal indicating to make transition to a normal mode, when the power supply voltage has reached the target voltage. The control unit includes a calculation circuit, which is operated in accordance with a program. The calculation circuit is provided between the input unit and the output unit.

    摘要翻译： 控制器形成为一个芯片，并且控制向CPU提供电源电压的电压调节器。 控制器包括：输入单元，用于接收用于监视施加到CPU的电源电压的监视电压; 控制单元，用于在放电模式下通过所述电压调节器处于截止状态来检测所述电源电压被所述监视电压降低到目标电压; 以及输出单元，用于当电源电压达到目标电压时，输出指示转换到正常模式的结果信号。 控制单元包括根据程序操作的计算电路。 计算电路设置在输入单元和输出单元之间。

    ELECTRONIC DEVICE, ELECTRONIC DEVICE COOPERATING SYSTEM, AND ELECTRONIC DEVICE CONTROLLING METHOD
    8.
    发明申请
    ELECTRONIC DEVICE, ELECTRONIC DEVICE COOPERATING SYSTEM, AND ELECTRONIC DEVICE CONTROLLING METHOD 审中-公开
    电子设备，电子设备合作系统和电子设备控制方法

    公开(公告)号：US20130332706A1

    公开(公告)日：2013-12-12

    申请号：US14001026

    申请日：2012-05-14

    申请人： Atsushi Tanaka

    发明人： Atsushi Tanaka

    IPC分类号： G06F9/00

    CPC分类号： G06F9/00 ,  G06F13/385

    摘要： There are included a communication part performing communication with other device; a command managing part transmitting a command of an own device to other device and receiving a command of other device to acquire the command of other device by the communication part, and managing the command of the own device and the command of other device; and a command processing part executing processing of a function corresponding to the command of the own device by the own device when a command selected from the commands managed by the command managing part is the command of the own device, and executing processing of a function corresponding to the command of other device by the other device when the command selected is the command of the other device.

    摘要翻译： 包括与其他设备进行通信的通信部件; 命令管理部，将自身设备的命令发送到其他设备，并接收其他设备的命令以通过通信部分获取其他设备的命令，并管理自身设备的命令和其他设备的命令; 以及命令处理部，当从由命令管理部管理的命令中选择的命令为自身装置的命令时，通过自身装置执行与本装置的命令对应的功能的处理，并执行对应的功能的处理 当所选择的命令是另一设备的命令时，由另一设备指定其他设备。