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    Semiconductor photodiode device and manufacturing method thereof
    1.
    发明授权
    Semiconductor photodiode device and manufacturing method thereof 有权
    半导体光电二极管装置及其制造方法

    公开(公告)号：US08294213B2

    公开(公告)日：2012-10-23

    申请号：US12838445

    申请日：2010-07-17

    申请人： Makoto Miura ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

    发明人： Makoto Miura ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

    IPC分类号： H01L21/00 ,  H01L21/331 ,  H01L27/12

    CPC分类号： H01L31/03921 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1808 ,  Y02E10/547

    摘要： A semiconductor photodiode device includes a semiconductor substrate, a first buffer layer containing a material different from that of the semiconductor substrate in a portion thereof, a first semiconductor layer formed above the buffer layer and having a lattice constant different from that of the semiconductor substrate, a second buffer layer formed above the first semiconductor layer and containing an element identical with that of the first semiconductor layer in a portion thereof, and a second semiconductor layer formed above the buffer layer in which a portion of the first semiconductor layer is formed of a plurality of island shape portions each surrounded with an insulating film, and the second buffer layer allows adjacent islands of the first semiconductor layer to coalesce with each other and is in contact with the insulating film.

    摘要翻译： 半导体光电二极管装置包括半导体衬底，第一缓冲层，其部分含有不同于半导体衬底的材料;第一半导体层，形成在缓冲层上方，具有不同于半导体衬底的晶格常数; 第二缓冲层，形成在第一半导体层的上方，并且在其一部分中含有与第一半导体层相同的元件;以及第二半导体层，形成在缓冲层的上方，第一半导体层的一部分由 多个岛状部分，各自被绝缘膜包围，第二缓冲层允许第一半导体层的相邻岛状物彼此聚结并与绝缘膜接触。

    SEMICONDUCTOR PHOTODIODE DEVICE AND MANUFACTURING METHOD THEREOF
    3.
    发明申请
    SEMICONDUCTOR PHOTODIODE DEVICE AND MANUFACTURING METHOD THEREOF 失效
    半导体光电设备及其制造方法

    公开(公告)号：US20110031578A1

    公开(公告)日：2011-02-10

    申请号：US12838444

    申请日：2010-07-17

    申请人： Makoto MIURA ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

    发明人： Makoto MIURA ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

    IPC分类号： H01L31/10 ,  H01L31/18

    CPC分类号： H01L21/02639 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1124 ,  H01L31/1808 ,  Y02E10/547

    摘要： A semiconductor photodiode includes a semiconductor substrate; a first conduction type first semiconductor layer formed above the semiconductor substrate; a high resistance second semiconductor layer formed above the first semiconductor layer; a first conduction type third semiconductor layer formed above the second semiconductor layer; and a second conduction type fourth semiconductor layer buried in the second semiconductor layer, in which the fourth semiconductor layer is separated at a predetermined distance in a direction horizontal to the surface of the semiconductor substrate.

    摘要翻译： 半导体光电二极管包括半导体衬底; 形成在半导体衬底上的第一导电型第一半导体层; 形成在所述第一半导体层上方的高电阻第二半导体层; 形成在所述第二半导体层上方的第一导电型第三半导体层; 以及埋在第二半导体层中的第二导电型第四半导体层，其中第四半导体层在与半导体衬底的表面水平的方向上以预定距离分开。

    SEMICONDUCTOR PHOTODIODE DEVICE AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    SEMICONDUCTOR PHOTODIODE DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体光电设备及其制造方法

    公开(公告)号：US20110031529A1

    公开(公告)日：2011-02-10

    申请号：US12838445

    申请日：2010-07-17

    申请人： Makoto MIURA ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

    发明人： Makoto MIURA ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

    IPC分类号： H01L31/0352 ,  H01L31/18 ,  H01L31/10

    CPC分类号： H01L31/03921 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1808 ,  Y02E10/547

    摘要： A semiconductor photodiode device includes a semiconductor substrate, a first buffer layer containing a material different from that of the semiconductor substrate in a portion thereof, a first semiconductor layer formed above the buffer layer and having a lattice constant different from that of the semiconductor substrate, a second buffer layer formed above the first semiconductor layer and containing an element identical with that of the first semiconductor layer in a portion thereof, and a second semiconductor layer formed above the buffer layer in which a portion of the first semiconductor layer is formed of a plurality of island shape portions each surrounded with an insulating film, and the second buffer layer allows adjacent islands of the first semiconductor layer to coalesce with each other and is in contact with the insulating film.

    摘要翻译： 半导体光电二极管装置包括半导体衬底，第一缓冲层，其部分含有不同于半导体衬底的材料;第一半导体层，形成在缓冲层上方，具有不同于半导体衬底的晶格常数; 第二缓冲层，形成在第一半导体层的上方，并且在其一部分中含有与第一半导体层相同的元件;以及第二半导体层，形成在缓冲层的上方，第一半导体层的一部分由 多个岛状部分，各自被绝缘膜包围，第二缓冲层允许第一半导体层的相邻岛状物彼此聚结并与绝缘膜接触。

    Semiconductor photodiode device and manufacturing method thereof
    5.
    发明授权
    Semiconductor photodiode device and manufacturing method thereof 失效
    半导体光电二极管装置及其制造方法

    公开(公告)号：US08350301B2

    公开(公告)日：2013-01-08

    申请号：US12838444

    申请日：2010-07-17

    申请人： Makoto Miura ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

    发明人： Makoto Miura ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

    IPC分类号： H01L21/00

    CPC分类号： H01L21/02639 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1124 ,  H01L31/1808 ,  Y02E10/547

    摘要： A semiconductor photodiode includes a semiconductor substrate; a first conduction type first semiconductor layer formed above the semiconductor substrate; a high resistance second semiconductor layer formed above the first semiconductor layer; a first conduction type third semiconductor layer formed above the second semiconductor layer; and a second conduction type fourth semiconductor layer buried in the second semiconductor layer, in which the fourth semiconductor layer is separated at a predetermined distance in a direction horizontal to the surface of the semiconductor substrate.

    摘要翻译： 半导体光电二极管包括半导体衬底; 形成在半导体衬底上的第一导电型第一半导体层; 形成在所述第一半导体层上方的高电阻第二半导体层; 形成在所述第二半导体层上方的第一导电型第三半导体层; 以及埋在第二半导体层中的第二导电型第四半导体层，其中第四半导体层在与半导体衬底的表面水平的方向上以预定距离分开。

    Semiconductor optical element
    6.
    发明授权
    Semiconductor optical element 有权
    半导体光学元件

    公开(公告)号：US09041080B2

    公开(公告)日：2015-05-26

    申请号：US14376662

    申请日：2012-08-02

    申请人： Kazuki Tani ,  Shinichi Saito ,  Katsuya Oda

    发明人： Kazuki Tani ,  Shinichi Saito ,  Katsuya Oda

    IPC分类号： H01L29/00 ,  H01S5/32

    CPC分类号： H01S5/3223 ,  H01L33/34 ,  H01L33/38 ,  H01S5/0206 ,  H01S5/021 ,  H01S5/0424 ,  H01S5/1228 ,  H01S5/125 ,  H01S5/2272

    摘要： To provide a light-emitting element where electrons are efficiently injected into a Ge light emission layer and light can be efficiently emitted, the light-emitting element has a barrier layer 3 which is formed on an insulating film 2, worked in a size in which quantum confinement effect manifests and made of monocrystalline Si, a p-type diffused layer electrode 5 and an n-type diffused layer electrode 6 respectively provided at both ends of the barrier layer 3, and a monocrystalline Ge light emission part 13 provided on the barrier layer 3 between the electrodes 5, 6. At least a part of current that flows between the electrodes 5, 6 flows in the barrier layer 3 in a horizontal direction with respect to a substrate 1.

    摘要翻译： 为了提供一种发光元件，其中电子被有效地注入到Ge发光层中并且可以有效地发射光，发光元件具有形成在绝缘膜2上的阻挡层3，该阻挡层3以 量子限制效应表现为单晶Si，分别设置在阻挡层3的两端的p型扩散层电极5和n型扩散层电极6以及设置在势垒层3上的单晶Ge发光部13 在电极5,6之间流动的电流的至少一部分在阻挡层3中相对于基板1在水平方向上流动。

    SEMICONDUCTOR OPTICAL ELEMENT
    7.
    发明申请
    SEMICONDUCTOR OPTICAL ELEMENT 有权
    半导体光学元件

    公开(公告)号：US20140355636A1

    公开(公告)日：2014-12-04

    申请号：US14364074

    申请日：2011-12-12

    申请人： Tadashi Okumura ,  Shinichi Saito ,  Kazuki Tani ,  Etsuko Nomoto ,  Katsuya Oda

    发明人： Tadashi Okumura ,  Shinichi Saito ,  Kazuki Tani ,  Etsuko Nomoto ,  Katsuya Oda

    IPC分类号： H01S5/32 ,  H01L31/0352 ,  H01L31/028

    CPC分类号： H01L33/34 ,  H01L31/035272 ,  H01L31/103 ,  H01L33/44 ,  H01S5/021 ,  H01S5/2214 ,  H01S5/3211 ,  H01S5/3219 ,  H01S5/3223 ,  H01L2924/01032 ,  H01L2924/10252

    摘要： In order to provide a highly reliable silicon-germanium semiconductor optical element of high luminous efficiency or of low power consumption that can reduce or prevent the occurrence of dislocations or crystal defects on the interface between a light emitting layer or a light absorption layer and a cladding layer, in a silicon-germanium semiconductor optical element, a germanium protective layer 11 of non-light emission is disposed between a germanium light emitting layer or the light absorption layer 10 and a cladding layer 12 disposed above a substrate. The germanium protective layer 11 has the electrical conductivity different from electrical conductivity of the germanium light emitting layer or the light absorption layer 10.

    摘要翻译： 为了提供高发光效率或低功耗的高可靠性硅锗半导体光学元件，可以减少或防止在发光层或光吸收层与包层之间的界面上发生位错或晶体缺陷 在硅锗半导体光学元件中，在锗发光层或光吸收层10和设置在基板上方的包覆层12之间设置非发光锗保护层11。 锗保护层11具有与锗发光层或光吸收层10的电导率不同的导电性。

    LIGHT-EMITTING DEVICE, LIGHT-RECEIVING DEVICE AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    LIGHT-EMITTING DEVICE, LIGHT-RECEIVING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    发光装置，光接收装置及其制造方法

    公开(公告)号：US20110227116A1

    公开(公告)日：2011-09-22

    申请号：US13129115

    申请日：2009-10-21

    申请人： Shinichi Saito ,  Masahiro Aoki ,  Nobuyuki Sugii ,  Katsuya Oda ,  Toshiki Sugawa

    发明人： Shinichi Saito ,  Masahiro Aoki ,  Nobuyuki Sugii ,  Katsuya Oda ,  Toshiki Sugawa

    IPC分类号： H01L33/34 ,  H01L33/60 ,  H01L31/028 ,  H01L31/18

    CPC分类号： H01S5/3201 ,  H01L31/103 ,  H01L31/1808 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/0424 ,  H01S5/1032 ,  H01S5/1231 ,  H01S5/125 ,  H01S5/3223 ,  Y02E10/50

    摘要： An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a germanium laser diode characterized in that tensile strain is applied to single-crystal germanium serving as a light-emitting layer to be of a direct transition type, a thin semiconductor layer made of silicon, germanium or silicon-germanium is connected adjacently to both ends of the germanium light-emitting layer, the thin semiconductor layer has a certain degree of thickness capable of preventing the occurrence of quantum confinement effect, another end of the thin semiconductor layer is connected to a thick electrode doped with impurities at a high concentration, the electrode is doped to a p type and an n type, a waveguide is formed so as not to be in direct contact with the electrode, and a mirror is formed at an end of the waveguide.

    摘要翻译： 本发明的目的是提供一种可以通过使用普通硅工艺容易地在诸如硅的衬底上形成的锗激光二极管，并且能够有效发光。 根据本发明的锗发光器件是锗激光二极管，其特征在于将拉伸应变施加到作为直接转变型的发光层的单晶锗，由硅制成的薄半导体层 ，锗或锗锗与锗发光层的两端相邻连接，薄型半导体层具有能够防止量子限制效应发生的一定程度的厚度，薄半导体层的另一端与 以高浓度掺杂有杂质的厚电极，电极被掺杂成ap型和n型，形成波导以不与电极直接接触，并且在波导的端部形成反射镜 。

    SEMICONDUCTOR OPTICAL ELEMENT
    9.
    发明申请
    SEMICONDUCTOR OPTICAL ELEMENT 有权
    半导体光学元件

    公开(公告)号：US20150055669A1

    公开(公告)日：2015-02-26

    申请号：US14376662

    申请日：2012-08-02

    申请人： Kazuki Tani ,  Shinichi Saito ,  Katsuya Oda

    发明人： Kazuki Tani ,  Shinichi Saito ,  Katsuya Oda

    IPC分类号： H01S5/32

    CPC分类号： H01S5/3223 ,  H01L33/34 ,  H01L33/38 ,  H01S5/0206 ,  H01S5/021 ,  H01S5/0424 ,  H01S5/1228 ,  H01S5/125 ,  H01S5/2272

    摘要： To provide a light-emitting element where electrons are efficiently injected into a Ge light emission layer and light can be efficiently emitted, the light-emitting element has a barrier layer 3 which is formed on an insulating film 2, worked in a size in which quantum confinement effect manifests and made of monocrystalline Si, a p-type diffused layer electrode 5 and an n-type diffused layer electrode 6 respectively provided at both ends of the barrier layer 3, and a monocrystalline Ge light emission part 13 provided on the barrier layer 3 between the electrodes 5, 6. At least a part of current that flows between the electrodes 5, 6 flows in the barrier layer 3 in a horizontal direction with respect to a substrate 1.

    摘要翻译： 为了提供一种发光元件，其中电子被有效地注入到Ge发光层中并且可以有效地发射光，发光元件具有形成在绝缘膜2上的阻挡层3，该阻挡层3以 量子限制效应表现为单晶Si，分别设置在阻挡层3的两端的p型扩散层电极5和n型扩散层电极6以及设置在势垒层3上的单晶Ge发光部13 在电极5,6之间流动的电流的至少一部分在阻挡层3中相对于基板1在水平方向上流动。

    Light-emitting device, light-receiving device and method of manufacturing the same
    10.
    发明授权
    Light-emitting device, light-receiving device and method of manufacturing the same 有权
    发光装置，光接收装置及其制造方法

    公开(公告)号：US08680553B2

    公开(公告)日：2014-03-25

    申请号：US13129115

    申请日：2009-10-21

    申请人： Shinichi Saito ,  Masahiro Aoki ,  Nobuyuki Sugii ,  Katsuya Oda ,  Toshiki Sugawara

    发明人： Shinichi Saito ,  Masahiro Aoki ,  Nobuyuki Sugii ,  Katsuya Oda ,  Toshiki Sugawara

    IPC分类号： H01L33/34

    CPC分类号： H01S5/3201 ,  H01L31/103 ,  H01L31/1808 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/0424 ,  H01S5/1032 ,  H01S5/1231 ,  H01S5/125 ,  H01S5/3223 ,  Y02E10/50

    摘要： An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a germanium laser diode characterized in that tensile strain is applied to single-crystal germanium serving as a light-emitting layer to be of a direct transition type, a thin semiconductor layer made of silicon, germanium or silicon-germanium is connected adjacently to both ends of the germanium light-emitting layer, the thin semiconductor layer has a certain degree of thickness capable of preventing the occurrence of quantum confinement effect, another end of the thin semiconductor layer is connected to a thick electrode doped with impurities at a high concentration, the electrode is doped to a p type and an n type, a waveguide is formed so as not to be in direct contact with the electrode, and a mirror is formed at an end of the waveguide.

    摘要翻译： 本发明的目的是提供一种可以通过使用普通硅工艺容易地在诸如硅的衬底上形成的锗激光二极管，并且能够有效发光。 根据本发明的锗发光器件是锗激光二极管，其特征在于将拉伸应变施加到作为直接转变型的发光层的单晶锗，由硅制成的薄半导体层 ，锗或锗锗与锗发光层的两端相邻连接，薄型半导体层具有能够防止量子限制效应发生的一定程度的厚度，薄型半导体层的另一端与 以高浓度掺杂有杂质的厚电极，电极被掺杂成ap型和n型，形成波导以不与电极直接接触，并且在波导的端部形成反射镜 。