利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

98 条记录 (耗时 0.036 秒)

    Resonant device, communication module, communication device, and method for manufacturing resonant device
    1.
    发明授权
    Resonant device, communication module, communication device, and method for manufacturing resonant device 失效
    共振装置，通信模块，通信装置及谐振装置的制造方法

    公开(公告)号：US08222970B2

    公开(公告)日：2012-07-17

    申请号：US12503558

    申请日：2009-07-15

    申请人： Kazunori Inoue ,  Tokihiro Nishihara ,  Takashi Matsuda ,  Shinji Taniguchi

    发明人： Kazunori Inoue ,  Tokihiro Nishihara ,  Takashi Matsuda ,  Shinji Taniguchi

    IPC分类号： H03H9/54 ,  H03H9/70

    CPC分类号： H03H3/04 ,  H03H9/02133 ,  H03H9/583 ,  H03H9/588 ,  H03H2003/023

    摘要： A resonant device includes first and second piezoelectric thin film resonators. The first piezoelectric thin film resonator includes a substrate, a first lower electrode formed on the substrate, a first piezoelectric film formed over the first lower electrode, and a first upper electrode formed on the piezoelectric film and opposed to the first lower electrode. The second piezoelectric thin film resonator includes a second lower electrode formed above the first upper electrode, a second piezoelectric film formed over the second lower electrode, and a second upper electrode formed on the piezoelectric film and opposed to the second lower electrode. The first membrane region in which the first lower electrode opposes to the first upper electrode through the first piezoelectric film and a second membrane region in which the second lower electrode opposes to the second upper electrode through the second piezoelectric film are laminated through a second cavity.

    摘要翻译： 谐振装置包括第一和第二压电薄膜谐振器。 第一压电薄膜谐振器包括基板，形成在基板上的第一下电极，形成在第一下电极上的第一压电膜，以及形成在压电膜上并与第一下电极相对的第一上电极。 第二压电薄膜谐振器包括形成在第一上电极上的第二下电极，形成在第二下电极上的第二压电薄膜和形成在压电薄膜上并与第二下电极相对的第二上电极。 其中第一下部电极通过第一压电膜与第一上部电极相对的第一膜区域和通过第二压电膜将第二下部电极与第二上部电极相对的第二膜区域通过第二腔层叠。

    RESONANT DEVICE, COMMUNICATION MODULE, COMMUNICATION DEVICE, AND METHOD FOR MANUFACTURING RESONANT DEVICE
    2.
    发明申请
    RESONANT DEVICE, COMMUNICATION MODULE, COMMUNICATION DEVICE, AND METHOD FOR MANUFACTURING RESONANT DEVICE 失效
    共振装置，通信模块，通信装置和制造谐振装置的方法

    公开(公告)号：US20100013575A1

    公开(公告)日：2010-01-21

    申请号：US12503558

    申请日：2009-07-15

    申请人： Kazunori INOUE ,  Tokihiro Nishihara ,  Takashi Matsuda ,  Shinji Taniguchi

    发明人： Kazunori INOUE ,  Tokihiro Nishihara ,  Takashi Matsuda ,  Shinji Taniguchi

    IPC分类号： H03H9/15

    CPC分类号： H03H3/04 ,  H03H9/02133 ,  H03H9/583 ,  H03H9/588 ,  H03H2003/023

    摘要： A resonant device includes first and second piezoelectric thin film resonators. The first piezoelectric thin film resonator includes a substrate, a first lower electrode formed on the substrate, a first piezoelectric film formed over the first lower electrode, and a first upper electrode formed on the piezoelectric film and opposed to the first lower electrode. The second piezoelectric thin film resonator includes a second lower electrode formed above the first upper electrode, a second piezoelectric film formed over the second lower electrode, and a second upper electrode formed on the piezoelectric film and opposed to the second lower electrode. The first membrane region in which the first lower electrode opposes to the first upper electrode through the first piezoelectric film and a second membrane region in which the second lower electrode opposes to the second upper electrode through the second piezoelectric film are laminated through a second cavity.

    摘要翻译： 谐振装置包括第一和第二压电薄膜谐振器。 第一压电薄膜谐振器包括基板，形成在基板上的第一下电极，形成在第一下电极上的第一压电膜，以及形成在压电膜上并与第一下电极相对的第一上电极。 第二压电薄膜谐振器包括形成在第一上电极上的第二下电极，形成在第二下电极上的第二压电薄膜和形成在压电薄膜上并与第二下电极相对的第二上电极。 其中第一下部电极通过第一压电膜与第一上部电极相对的第一膜区域和通过第二压电膜将第二下部电极与第二上部电极相对的第二膜区域通过第二腔层叠。

    Duplexer and ladder type filter
    3.
    发明授权
    Duplexer and ladder type filter 有权
    双工器和梯形过滤器

    公开(公告)号：US07573354B2

    公开(公告)日：2009-08-11

    申请号：US11500486

    申请日：2006-08-08

    申请人： Tokihiro Nishihara ,  Shogo Inoue ,  Takashi Matsuda ,  Masanori Ueda ,  Masafumi Iwaki ,  Shinji Taniguchi ,  Go Endo

    发明人： Tokihiro Nishihara ,  Shogo Inoue ,  Takashi Matsuda ,  Masanori Ueda ,  Masafumi Iwaki ,  Shinji Taniguchi ,  Go Endo

    IPC分类号： H03H9/70 ,  H03H9/72 ,  H03H9/54 ,  H03H9/64

    CPC分类号： H03H9/706 ,  H03H9/605 ,  H03H9/725

    摘要： A duplexer includes an antenna terminal, a first filter connected to the antenna terminal, and a second filter connected to the antenna terminal. At least one of the first filter and the second filter is a ladder type filter in which a parallel resonator and multiple series resonators are included, one or more first inductors are respectively connected in parallel with one or more series resonators out of the multiple series resonators, and one of the one or more first inductors is connected in parallel with one of the multiple series resonators that is arranged closest to the antenna terminal.

    摘要翻译： 双工器包括天线端子，连接到天线端子的第一滤波器和连接到天线端子的第二滤波器。 第一滤波器和第二滤波器中的至少一个是梯形滤波器，其中包括并联谐振器和多个串联谐振器，一个或多个第一电感器分别与多个串联谐振器中的一个或多个串联谐振器并联连接 并且所述一个或多个第一电感器中的一个与最靠近天线端子布置的多个串联谐振器中的一个并联连接。

    Duplexer and ladder type filter
    4.
    发明申请
    Duplexer and ladder type filter 有权
    双工器和梯形过滤器

    公开(公告)号：US20070030096A1

    公开(公告)日：2007-02-08

    申请号：US11500486

    申请日：2006-08-08

    申请人： Tokihiro Nishihara ,  Shogo Inoue ,  Takashi Matsuda ,  Masanori Ueda ,  Masafumi Iwaki ,  Shinji Taniguchi ,  Go Endo

    发明人： Tokihiro Nishihara ,  Shogo Inoue ,  Takashi Matsuda ,  Masanori Ueda ,  Masafumi Iwaki ,  Shinji Taniguchi ,  Go Endo

    IPC分类号： H03H9/72 ,  H03H9/64

    CPC分类号： H03H9/706 ,  H03H9/605 ,  H03H9/725

    摘要： A duplexer includes an antenna terminal, a first filter connected to the antenna terminal, and a second filter connected to the antenna terminal. At least one of the first filter and the second filter is a ladder type filter in which a parallel resonator and multiple series resonators are included, one or more first inductors are respectively connected in parallel with one or more series resonators out of the multiple series resonators, and one of the one or more first inductors is connected in parallel with one of the multiple series resonators that is arranged closest to the antenna terminal.

    摘要翻译： 双工器包括天线端子，连接到天线端子的第一滤波器和连接到天线端子的第二滤波器。 第一滤波器和第二滤波器中的至少一个是梯形滤波器，其中包括并联谐振器和多个串联谐振器，一个或多个第一电感器分别与多个串联谐振器中的一个或多个串联谐振器并联连接 并且所述一个或多个第一电感器中的一个与最靠近天线端子布置的多个串联谐振器中的一个并联连接。

    FILM BULK ACOUSTIC RESONATOR, FILTER, COMMUNICATION MODULE AND COMMUNICATION APPARATUS
    9.
    发明申请
    FILM BULK ACOUSTIC RESONATOR, FILTER, COMMUNICATION MODULE AND COMMUNICATION APPARATUS 有权
    电影大容量声学谐振器，滤波器，通信模块和通信设备

    公开(公告)号：US20110006860A1

    公开(公告)日：2011-01-13

    申请号：US12921150

    申请日：2008-03-04

    申请人： Motoaki Hara ,  Tokihiro Nishihara ,  Shinji Taniguchi ,  Takeshi Sakashita ,  Tsuyoshi Yokoyama ,  Masafumi Iwaki ,  Masanori Ueda

    发明人： Motoaki Hara ,  Tokihiro Nishihara ,  Shinji Taniguchi ,  Takeshi Sakashita ,  Tsuyoshi Yokoyama ,  Masafumi Iwaki ,  Masanori Ueda

    IPC分类号： H03H9/17 ,  H01L41/053

    CPC分类号： H03H9/174 ,  H03H3/02 ,  H03H9/02118 ,  H03H9/173 ,  H03H2003/021 ,  H03H2003/023

    摘要： A piezoelectric thin film resonator of the present has a substrate 1, an intermediate layer 7 disposed on the substrate 1 and is formed of an insulator, a lower electrode 3 disposed on the intermediate layer 7, a piezoelectric film 4 disposed on the lower electrode 3, and an upper electrode 5 disposed on a position facing the lower electrode 3 with the piezoelectric film 4 interposed therebetween, in which, in a resonant region 8 where the lower electrode 3 and the upper electrode 5 face each other, a space 6 is formed in the substrate 1 and the intermediate layer 7 or between the lower electrode 3 and the intermediate layer 7 and the region of the space 6 is included in the resonant region 8. With the structure, the dissipation of the vibrational energy to the substrate from the resonance portion can be suppressed, thereby improving the quality factor.

    摘要翻译： 本发明的压电薄膜谐振器具有基板1，设置在基板1上并由绝缘体形成的中间层7，设置在中间层7上的下部电极3，设置在下部电极3上的压电膜4 以及设置在面向下电极3的位置上的上电极5，其间插入压电膜4，其中在下电极3和上电极5彼此面对的谐振区域8中形成有空间6 在基板1和中间层7中，或在下部电极3和中间层7之间，并且空间6的区域包含在谐振区域8中。通过这种结构，振动能量从基板 可以抑制共振部分，从而提高质量因素。