摘要:
A piezoelectric thin film resonator includes a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film. At least a portion of the upper electrode and that of the lower electrode oppose each other through the piezoelectric film, and at least a portion of the periphery of the upper electrode is reversely tapered.
摘要:
An acoustic wave device includes piezoelectric thin-film resonators, each of which includes: a substrate; a piezoelectric thin-film on the substrate; an lower electrode provided on a first surface of the piezoelectric film; an upper electrode provided on a second surface of the piezoelectric film opposite to the first surface; and a first addition film that is provided in a resonance portion in which the lower electrode and the upper electrode face each other through the piezoelectric film and is located between the piezoelectric thin-film and the upper electrode, the first addition film having a shape different from that of the resonance portion.
摘要:
A piezoelectric thin-film resonator includes a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the substrate and the lower electrode, an upper electrode provided on the piezoelectric film, and an additional pattern, a cavity being formed between the lower electrode and the substrate in a resonance portion in which the lower electrode and the upper electrode face each other through the piezoelectric film, the additional pattern being provided in a position that is on the lower electrode and includes an interface between the resonance portion and a non-resonance portion.
摘要:
A resonator includes a substrate, a lower electrode, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film. The lower electrode includes a first film provided on the substrate, and a second film that is provided on the first film and has a specific gravity greater than that of the first film. The piezoelectric film is provided on the second film. The upper electrode includes a third film provided on the piezoelectric film, and a fourth film provided on the third film, the third film having a specific gravity greater than that of the fourth film. The third film is thicker than the second film.
摘要:
A piezoelectric thin film resonator of the present has a substrate 1, an intermediate layer 7 disposed on the substrate 1 and is formed of an insulator, a lower electrode 3 disposed on the intermediate layer 7, a piezoelectric film 4 disposed on the lower electrode 3, and an upper electrode 5 disposed on a position facing the lower electrode 3 with the piezoelectric film 4 interposed therebetween, in which, in a resonant region 8 where the lower electrode 3 and the upper electrode 5 face each other, a space 6 is formed in the substrate 1 and the intermediate layer 7 or between the lower electrode 3 and the intermediate layer 7 and the region of the space 6 is included in the resonant region 8. With the structure, the dissipation of the vibrational energy to the substrate from the resonance portion can be suppressed, thereby improving the quality factor.
摘要:
A filter has a plurality of piezoelectric thin film resonators formed by sandwiching a piezoelectric film with a lower electrode disposed on a substrate and an upper electrode. Each of the piezoelectric thin film resonators has an electrode region formed with the upper electrode and the lower electrode overlapping each other, whose outline includes a curve. Among the plural piezoelectric thin film resonators, the piezoelectric thin film resonators in the opposing electrode regions of the adjacent piezoelectric thin film resonators are shaped to have outlines complementary to each other. With the filter, influences caused by transverse mode undesired wave of the piezoelectric thin film resonators can be suppressed. Therefore, miniaturization can be achieved without sacrificing the mechanical strength of electrodes having hollow structures.
摘要:
A piezoelectric thin-film resonator includes a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film so as to have a portion that overlaps the lower electrode across the piezoelectric film. At least a part of an outer end of the piezoelectric film is further in than an outer end of an opposing region in which the upper and lower electrodes overlap each other across the piezoelectric film.
摘要:
A piezoelectric thin-film resonator includes a lower electrode formed on a substrate to define a rounded dome-shaped cavity between the lower electrode and the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film. A membrane region is an overlapping region of the lower electrode and the upper electrode interposing the piezoelectric film and a projected area of the cavity onto the substrate includes the membrane region.
摘要:
A piezoelectric thin-film resonator includes a lower electrode provided on a substrate, a piezoelectric thin film provided on the lower electrode, and an upper electrode provided on the piezoelectric thin film. A membrane region is defined by a region where the upper electrode and the lower electrode overlap each other to sandwich the piezoelectric thin film therebetween and has an elliptical shape, and the lower electrode is also provided at an outer side of the membrane region in a region in which neither an extraction electrode of the upper electrode nor an extraction electrode of the lower electrode is provided.
摘要:
A method of manufacturing an elastic wave device is provided with a lamination step of forming, on a substrate (1), a plurality of elastic wave devices, each of which includes a lower electrode (2), a piezoelectric film (3), and an upper electrode (4); a measuring step for measuring the operation frequency distribution of the elastic wave devices on the substrate (1); and an adjusting step for forming an adjusting region, in which the thickness of the elastic wave device is different from the thicknesses of other portions in a resonance portion of each elastic wave device, corresponding with the distribution of the operation frequencies. The adjusting region is formed so that the size of the area of the adjusting region of the resonator portion of each elastic wave device is different in accordance with the operation frequency distribution that is measured. Thus, the frequency characteristics of the elastic wave devices are easily adjusted by a small number of steps.