Semiconductor device and method for driving the same
    1.
    发明授权
    Semiconductor device and method for driving the same 有权
    半导体装置及其驱动方法

    公开(公告)号:US08575610B2

    公开(公告)日:2013-11-05

    申请号:US13213673

    申请日:2011-08-19

    IPC分类号: H01L33/00

    摘要: An object is to alleviate the concentration of an electric field in a semiconductor device. A gate electrode and a drain electrode are provided not to overlap with each other, and an electric-field control electrode is provided between the gate electrode and the drain electrode over a top surface. Insulating layers are provided between the gate electrode and a semiconductor layer and between the electric-field control electrode and the semiconductor layer, and the insulating layer provided between the electric-field control electrode and the semiconductor layer has a larger thickness than the insulating layer provided between the gate electrode and the semiconductor layer. Further, when the semiconductor device is driven, the potential of the electric-field control electrode may be higher than or equal to a source potential and lower than a gate potential, and for example, connection between the electric-field control electrode and the source potential enables such a structure.

    摘要翻译: 目的是减轻半导体器件中的电场的集中。 栅极电极和漏极电极被设置为不彼此重叠,并且电场控制电极在顶表面上设置在栅电极和漏电极之间。 绝缘层设置在栅电极和半导体层之间以及电场控制电极和半导体层之间,并且设置在电场控制电极和半导体层之间的绝缘层具有比所提供的绝缘层更大的厚度 在栅电极和半导体层之间。 此外,当半导体器件被驱动时,电场控制电极的电位可以高于或等于源极电位并且低于栅极电位,并且例如电场控制电极和源极之间的连接 潜力可以实现这样的结构。

    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08823082B2

    公开(公告)日:2014-09-02

    申请号:US13205671

    申请日:2011-08-09

    申请人: Makoto Yanagisawa

    发明人: Makoto Yanagisawa

    IPC分类号: H01L29/78 H01L29/04

    摘要: The present invention is a semiconductor device including a first electrode over a substrate; a pair of oxide semiconductor films in contact with the first electrode; a second electrode in contact with the pair of oxide semiconductor films; a gate insulating film covering at least the first electrode and the pair of oxide semiconductor films; and a third electrode that is in contact with the gate insulating film and is formed at least between the pair of oxide semiconductor films. When the donor density of the oxide semiconductor films is 1.0×1013/cm3 or less, the thickness of the oxide semiconductor films is made larger than the in-plane length of each side of the oxide semiconductor films which is in contact with the first electrode.

    摘要翻译: 本发明是一种半导体器件,其包括在衬底上的第一电极; 与所述第一电极接触的一对氧化物半导体膜; 与所述一对氧化物半导体膜接触的第二电极; 覆盖至少所述第一电极和所述一对氧化物半导体膜的栅极绝缘膜; 以及与所述栅极绝缘膜接触并且至少形成在所述一对氧化物半导体膜之间的第三电极。 当氧化物半导体膜的供体密度为1.0×1013 / cm3以下时,使氧化物半导体膜的厚度大于与第一电极接触的氧化物半导体膜的各一侧的面内长度 。

    Photoelectric conversion device comprising a current mirror circuit connected to a field effect transistor, a buffer and a voltage detection circuit
    5.
    发明授权
    Photoelectric conversion device comprising a current mirror circuit connected to a field effect transistor, a buffer and a voltage detection circuit 有权
    光电转换装置包括连接到场效应晶体管的电流镜电路,缓冲器和电压检测电路

    公开(公告)号:US08431883B2

    公开(公告)日:2013-04-30

    申请号:US12141394

    申请日:2008-06-18

    IPC分类号: H01L31/00 H03F3/08

    摘要: It is an object to provide a photoelectric conversion device which can solve the problem of leakage current or noise caused when the photoelectric conversion device is connected to an external circuit by amplifying the current flows through the photoelectric conversion element, and which can widen dynamic range of the output voltage which is obtained in accordance with the current flowing through the photoelectric conversion element. The photoelectric conversion device includes a voltage detection circuit, and a photoelectric conversion circuit including a photoelectric conversion element, a current mirror circuit, and a field effect transistor. The current mirror circuit is a circuit which amplifies and outputs a photocurrent generated at the photoelectric conversion element. The voltage detection circuit is connected to the gate terminal of the field effect transistor so as to detect generated voltage.

    摘要翻译: 本发明的目的是提供一种光电转换装置,其可以通过放大通过光电转换元件的电流来解决当光电转换装置连接到外部电路时引起的漏电流或噪声的问题,并且可以扩大光电转换装置的动态范围 根据流经光电转换元件的电流获得的输出电压。 光电转换装置包括电压检测电路和包括光电转换元件,电流镜电路和场效应晶体管的光电转换电路。 电流镜电路是放大并输出在光电转换元件产生的光电流的电路。 电压检测电路连接到场效应晶体管的栅极端子,以检测产生的电压。

    HYBRID WORKING MACHINE
    6.
    发明申请
    HYBRID WORKING MACHINE 有权
    混合式加工机

    公开(公告)号:US20120144819A1

    公开(公告)日:2012-06-14

    申请号:US13311709

    申请日:2011-12-06

    IPC分类号: F15B1/027

    摘要: A hybrid working machine includes an engine, an assist motor configured to assist the engine, a hydraulic pump driven by the engine, an electric power accumulating unit configured to feed the assist motor with electric power, an electric-discharge electric motor configured to perform power running with electric power of an electric power accumulator of the electric power accumulating unit, an electric-discharge hydraulic motor connected to the electric-discharge electric motor, and a hydraulic circuit configured to control driving of the electric-discharge hydraulic motor. The hydraulic circuit includes a circulation circuit configured to be connected to a hydraulic feed port and a hydraulic discharge port of the electric-discharge hydraulic motor and a selector valve configured to perform such switching as to connect the electric-discharge hydraulic motor to the circulation circuit at a time of performing an electric discharge operation.

    摘要翻译: 混合式加工机包括发动机,辅助发动机构成的辅助马达,由发动机驱动的液压泵,配置为向辅助马达供电的蓄电单元,配置成进行动力的放电电动机 与蓄电单元的蓄电装置的电力一起运行,与放电电动机连接的放电液压马达,以及液压回路,其配置为控制排出液压马达的驱动。 该液压回路包括连接到排出液压马达的液压进给口和液压排出口的循环回路,以及构成为进行将排出液压马达与循环回路连接的切换 在执行放电操作时。

    Photoelectric conversion device and electronic device provided with the photoelectric conversion device
    7.
    发明授权
    Photoelectric conversion device and electronic device provided with the photoelectric conversion device 失效
    配备有光电转换装置的光电转换装置和电子装置

    公开(公告)号:US07737478B2

    公开(公告)日:2010-06-15

    申请号:US12053948

    申请日:2008-03-24

    IPC分类号: H01L31/113

    摘要: An output terminal of a photoelectric conversion element included in the photoelectric conversion device is connected to a drain terminal and a gate terminal of a MOS transistor which is diode-connected, and a voltage Vout generated at the gate terminal of the MOS transistor is detected in accordance with a current Ip which is generated at the photoelectric conversion element. The voltage Vout generated at the gate terminal of the MOS transistor can be directly detected, so that the range of output can be widened than a method in which an output voltage is converted into a current by connecting a load resistor, and so on.

    摘要翻译: 包括在光电转换装置中的光电转换元件的输出端子连接到二极管连接的MOS晶体管的漏极端子和栅极端子,并且在MOS晶体管的栅极端子处产生的电压Vout被检测到 根据在光电转换元件处产生的电流Ip。 可以直接检测在MOS晶体管的栅极端子处产生的电压Vout,使得可以比通过连接负载电阻器将输出电压转换为电流的方法等等来扩大输出范围。

    Antenna and semiconductor device having the same
    8.
    发明授权
    Antenna and semiconductor device having the same 有权
    天线和具有相同的半导体器件

    公开(公告)号:US07605761B2

    公开(公告)日:2009-10-20

    申请号:US11979990

    申请日:2007-11-13

    IPC分类号: H01Q1/38 H01Q5/00 H01Q9/04

    CPC分类号: H01Q7/00 H01Q1/2225 H01Q23/00

    摘要: An antenna capable of receiving circularly polarized waves and performing impedance matching between the antenna and an IC (integrated circuit) of a semiconductor device, and a semiconductor device having such an antenna. The antenna has a first conductor pattern with a loop configuration having a cut section, a second conductor pattern, a third conductor pattern, and a feeding section. A first end portion of the second conductor pattern and a first end portion of the third conductor pattern are connected to the first conductor pattern. A second end portion of the second conductor pattern and a second end portion of the third conductor pattern are connected to the feeding section. The total length of the second conductor pattern is longer than the total length of the third conductor pattern, and the second conductor pattern is placed closer to the cut section than the third conductor pattern is.

    摘要翻译: 能够接收圆偏振波并且在天线与半导体器件的IC(集成电路)之间进行阻抗匹配的天线以及具有这种天线的半导体器件。 天线具有第一导体图案,其具有切割部分,第二导体图案,第三导体图案和馈送部分的环形结构。 第二导体图案的第一端部和第三导体图案的第一端部连接到第一导体图案。 第二导体图案的第二端部和第三导体图案的第二端部连接到馈送部。 第二导体图案的总长度比第三导体图案的总长度长,并且第二导体图案比第三导体图案更靠近切割部分。

    CMOS image sensor for reducing kTC noise, reset transistor control circuit used in the image sensor and voltage switch circuit used in the control circuit
    9.
    发明申请
    CMOS image sensor for reducing kTC noise, reset transistor control circuit used in the image sensor and voltage switch circuit used in the control circuit 审中-公开
    用于降低kTC噪声的CMOS图像传感器,用于图像传感器中的复位晶体管控制电路和控制电路中使用的电压开关电路

    公开(公告)号:US20060001752A1

    公开(公告)日:2006-01-05

    申请号:US10980156

    申请日:2004-11-04

    IPC分类号: H04N5/335

    CPC分类号: H04N5/363

    摘要: The present invention can be applied to a CMOS image sensor in which each pixel circuit of an active pixel sensor array includes a photoelectric conversion element for converting input light into electricity and a switch transistor for controlling the supply of a reset voltage for resetting the photoelectric conversion element to a predetermined voltage, to the photoelectric conversion element. The CMOS image sensor comprises a control circuit for assigning a control signal applied to a control electrode of the switch transistor. The control circuit outputs a first voltage much higher than a supply voltage of the CMOS image sensor so as to make an ON resistance of the switch transistor sufficiently small in the first part of a reset period of the photoelectric conversion element and outputs a second voltage lower than a supply voltage of the CMOS image sensor in the latter part of a reset period of the photoelectric conversion element.

    摘要翻译: 本发明可以应用于CMOS图像传感器,其中有源像素传感器阵列的每个像素电路包括用于将输入光转换为电的光电转换元件和用于控制复位电压的供应的开关晶体管,用于复位光电转换 元件到预定电压。 CMOS图像传感器包括用于分配施加到开关晶体管的控制电极的控制信号的控制电路。 控制电路输出比CMOS图像传感器的电源电压高得多的第一电压,以使得在光电转换元件的复位周期的第一部分中开关晶体管的导通电阻足够小,并输出第二电压 比在光电转换元件的复位周期的后半部分中的CMOS图像传感器的电源电压。

    Current stabilization circuit, current stabilization method, and solid-state imaging apparatus
    10.
    发明申请
    Current stabilization circuit, current stabilization method, and solid-state imaging apparatus 有权
    电流稳定电路,电流稳定方法和固态成像装置

    公开(公告)号:US20060001476A1

    公开(公告)日:2006-01-05

    申请号:US10991400

    申请日:2004-11-19

    IPC分类号: H03B1/00

    CPC分类号: G05F3/262

    摘要: A circuit for stabilizing an electric current includes a constant voltage supplying circuit configured to supply a constant voltage, and a current generating circuit coupled to the constant voltage supplying circuit to generate an electric current based on a predetermined voltage responsive to the constant voltage and to adjust a current amount of the electric current to a predetermined amount by feedback control based on comparison of the predetermined voltage with a voltage appearing across a predetermined resistance responsive to the electric current.

    摘要翻译: 用于稳定电流的电路包括被配置为提供恒定电压的恒压供应电路和耦合到恒压供应电路的电流产生电路,以响应于恒定电压产生基于预定电压的电流并且调整 通过基于预定电压与响应于电流的预定电阻上出现的电压的反馈控制,将电流的电流量设定为预定量。