摘要:
The present invention relates to a magnetoresistive head having a spin valve MR film for use in a magnetic sensor, a magnetic head or the like. Of two ferromagnetic layers divided by a nonmagnetic metal film, at least ferromagnetic layer on the side being in contact with an antiferromagnetic layer is formed by a cobalt-nickel-iron alloy including at the rate of 5 to 40 atoms % of a nickel and 30 to 95 atoms % of cobalt.
摘要:
A magnetoresistive head used for reading information signals from a magnetic recording medium using a spin valve magnetoresistance effect, comprises a first ferromagnetic layer and a second ferromagnetic layer both are separated by a first nonmagnetic metal layer, a hard magnetic layer formed so as to contact to the second ferromagnetic layer, and a third ferromagnetic layer formed on the hard magnetic layer via a second nonmagnetic metal layer for shutting off exchange coupling and coupled to the second ferromagnetic layer and the hard magnetic layer by static magnetic combination.
摘要:
A spin valve magnetoresistive head includes a first soft magnetic layer and a second soft magnetic layer having larger internal stress than that of the first magnetic layer. The larger internal stress of the second soft magnetic layer is created by injecting the second soft magnetic layer with a selected type of ion. Also included in the head is a nonmagnetic layer formed between the first soft magnetic layer and the second soft magnetic layer.
摘要:
The present invention relates to a method of fabricating a magnetoresistive head formed by laminating a magnetic layer and a nonmagnetic metal layer including a silver film and used for converting change in magnetic field into change of resistivity of the device. A method of fabricating a magnetoresistive head upon laminating on a substrate a plurality of magnetic layers arranged to put nonmagnetic metal layer therebetween and a bias magnetic layer formed adjacent to one of the magnetic layers to give a magnetization of the specified direction to the magnetic layer, comprising the steps of setting film thicknesses of the nonmagnetic metal layers to be formed, and forming the nonmagnetic metal layers under a condition where temperature of the substrate is held within a temperature range less than an upper limit of a film forming temperature not to cause pin holes in the nonmagnetic metal layer.
摘要:
A magnetoresistive head in which an antiferromagnetic material having superior corrosion resistance is used is disclosed. In the magnetoresistive head, a pair of anti-ferromagnetic layers 24a and 24b are formed while contacting with a soft magnetic layer 23, and the antiferromagnetic layers 24a and 24b are made of a PdMn film.
摘要:
A magnetoresistive head in which an antiferromagnetic material having superior corrosion resistance is used is disclosed. In the magnetoresistive head, a pair of anti-ferromagnetic layers 24a and 24b are formed while contacting with a soft magnetic layer 23, and the antiferromagnetic layers 24a and 24b are made of a PdMn film.
摘要:
A method is disclosed for fabricating a spin-valve magnetic head including a layered body of a first ferromagnetic layer having a first easy axis of magnetization extending in a first direction, a non-magnetic layer formed on the first ferromagnetic layer, a second ferromagnetic layer provided on the non-magnetic layer, and an anti-ferromagnetic layer provided on the second ferromagnetic layer in exchange coupling therewith. The method includes a first thermal annealing process with the steps of annealing the layered body in a first annealing state and applying a magnetic field to the layered body in a second direction different from the first direction, while maintaining the layered body in the first annealing state. The method further includes a second thermal annealing process with the steps of annealing the layered body, after the first thermal annealing process, in a second annealing state and applying a magnetic field in a third direction different from the second direction while maintaining the layered body in the second annealing state.
摘要:
The present invention is directed to a photo-voltaic apparatus comprising a photo-voltaic module having a plurality of photo-voltaic cells, and an inverter for converting a direct current output generated from the photo-voltaic cells into an alternating current and outputting the alternating current, the inverter being mounted on a surface opposite to the light receiving surface of the photo-voltaic module with a clearance provided therebetween, so that heat self-generated by the inverter can be efficiently radiated, and heat from the photo-voltaic module is not transferred to the inverter.
摘要:
A power-supply system involving system interconnection includes a plurality of AC modules, each of which includes a solar cell module and an inverter unit which outputs a single-phase alternating current. The AC modules are connected to the single-phase three-wire distribution line such that the number of AC modules connected to the outer conductor R is the same as the number of AC modules connected to the outer conductor T. Each AC module has three junction pole pieces. Adjacent AC modules are connected to each other via a connecting cable connected to the junction pole pieces. Each AC module has a change-over circuit so as to be selectively connected to one of the outer conductors R or T. The power-supply system further includes an independent operation control device for independently operating the AC modules when the connection between the AC modules and the commercial electric power system is cut.
摘要:
Disclosed herein is a spin valve magnetoresistive sensor including a first conductor layer, a free ferromagnetic layer provided on the first conductor layer, a nonmagnetic intermediate layer provided on the free ferromagnetic layer, a pinned ferromagnetic layer provided on the nonmagnetic intermediate layer, an antiferromagnetic layer provided on the pinned ferromagnetic layer, and a second conductor layer provided on the antiferromagnetic layer. At least one of the free ferromagnetic layer and the pinned ferromagnetic layer has a thickness larger than that providing a maximum resistance change rate or resistance change amount in the case of passing a current in an in-plane direction of the at least one layer. That is, the thickness of at least one of the free ferromagnetic layer and the pinned ferromagnetic layer falls in the range of 3 nm to 12 nm.